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公开(公告)号：US12050402B2
公开(公告)日：2024-07-30
申请号：US17082233
申请日：2021-01-21
CPC分类号： G03F7/0045 , G03F7/2004
摘要： A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group and further containing at least one repeating unit having an aromatic substituent; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms with a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms without a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process of using it that show a particularly favorable mask dimension dependency and CDU in photolithography where a light source is a high-energy beam such as a KrF excimer laser beam, an electron beam, or an extreme ultraviolet ray.
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公开(公告)号：US11340527B2
公开(公告)日：2022-05-24
申请号：US17082175
申请日：2020-10-28
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , G03F7/11 , C07D307/93 , C07D493/18 , C07D327/04 , C08F220/18 , C07C381/12 , G03F7/20
摘要： A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group and not containing a repeating unit having an aromatic substituent; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.
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公开(公告)号：US09760010B2
公开(公告)日：2017-09-12
申请号：US15176967
申请日：2016-06-08
发明人： Jun Hatakeyama , Teppei Adachi
IPC分类号： G03F7/00 , G03F7/38 , G03F7/16 , C08F220/22 , C08F220/24 , G03F7/32 , C08F220/38 , G03F7/26 , C08L33/16 , G03F7/20 , C08F220/26 , B05D3/04 , B05D3/00 , H01L21/027 , B05D1/00 , G03F7/004 , G03F7/039 , G03F7/11 , H01L21/308
CPC分类号： G03F7/38 , B05D1/005 , B05D3/007 , B05D3/0433 , C08F220/22 , C08F220/24 , C08F220/26 , C08F220/38 , C08L33/16 , C08L2205/025 , G03F7/0046 , G03F7/0048 , G03F7/0397 , G03F7/11 , G03F7/168 , G03F7/2041 , G03F7/26 , G03F7/32 , H01L21/0274 , H01L21/3081
摘要： A pattern is formed by coating a resist composition comprising a fluorine-containing polymer, a base resin, an acid generator, and an organic solvent, baking the composition at 50-300° C. in an atmosphere of a solvent having a boiling point of 60-250° C., exposure, and development. In immersion lithography, the resist film is improved in water repellency and water slip, and LWR after pattern formation is reduced. In EB or EUV lithography, outgassing is suppressed and LWR is reduced.
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公开(公告)号：US20160168296A1
公开(公告)日：2016-06-16
申请号：US14960978
申请日：2015-12-07
发明人： Jun Hatakeyama , Kenji Funatsu , Teppei Adachi
IPC分类号： C08F224/00 , G03F7/32 , C08F216/10 , G03F7/16 , G03F7/20 , C08F236/20 , G03F7/039 , C08F220/68
CPC分类号： C08F220/28 , C08F212/14 , C08F216/10 , C08F220/18 , C08F220/38 , C08F220/40 , C08F220/68 , C08F224/00 , C08F236/20 , C08F2220/282 , C08F2220/382 , G03F7/0045 , G03F7/0046 , G03F7/0048 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/162 , G03F7/168 , G03F7/2004 , G03F7/32 , G03F7/322 , G03F7/325 , G03F7/38
摘要： A polymer comprising recurring units having an acid generator bound to the backbone, and recurring units having an optionally acid labile group-substituted carboxyl group and/or recurring units having an optionally acid labile group-substituted hydroxyl group is obtained by polymerizing corresponding monomers under such illumination that the quantity of light of wavelength up to 400 nm is up to 0.05 mW/cm2. The polymer avoids photo-decomposition of the acid generator during polymerization and concomitant deprotection reaction of the acid labile group when used in positive resist compositions. A pattern with high dissolution contrast and rectangularity is formed after development.
摘要翻译： 一种聚合物，其包含具有与主链结合的酸产生物的重复单元，以及具有任选的酸不稳定基团取代的羧基的重复单元和/或具有任选的酸不稳定基团取代的羟基的重复单元通过在其下聚合相应的单体而获得 照射波长达400nm的光量高达0.05mW / cm2。 聚合时，聚合物避免酸产生剂的光分解，并且当用于正性抗蚀剂组合物时，酸不稳定基团的伴随脱保护反应。 在开发后形成具有高溶解度对比度和矩形性的图案。
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公开(公告)号：US20150338744A1
公开(公告)日：2015-11-26
申请号：US14716982
申请日：2015-05-20
发明人： Jun Hatakeyama , Teppei Adachi
CPC分类号： G03F7/40 , C08F26/06 , C08F220/34 , C08F220/36 , C08F226/02 , C08F2220/281 , C08F2220/283 , C08F2220/301 , C08F2220/303 , C08F2220/346 , C08F2220/382 , C08L33/14 , C08L39/00 , C08L2312/06 , C09D133/14 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/32 , G03F7/325 , G03F7/405 , H01L21/0274
摘要： A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a polymer comprising recurring units having a tertiary amino group in a C6-C12 ether, C4-C10 alcohol, C6-C12 hydrocarbon, C6-C16 ester or C7-C16 ketone solvent, baking the coating, and removing the excessive shrink agent for thereby shrinking the size of spaces in the pattern.
摘要翻译： 通过将抗蚀剂组合物施加到基材上，使抗蚀剂膜曝光，并在有机溶剂显影剂中显影曝光的抗蚀剂膜，形成负图形。 该方法还包括用包含在C6-C12醚，C4-C10醇，C6-C12烃，C6-C16酯或C7-C16酮中具有叔氨基的重复单元的聚合物的收缩剂溶液涂覆负型图案 溶剂，烘烤涂层，并除去过量的收缩剂，从而缩小图案中的空间尺寸。
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公开(公告)号：US09017931B2
公开(公告)日：2015-04-28
申请号：US13968583
申请日：2013-08-16
IPC分类号： G03F7/38 , G03F7/004 , C08F228/02 , C08F232/02 , C07C69/54 , C07C219/08 , C07C303/32 , C07C309/20 , G03F7/038 , C08F220/38
CPC分类号： G03F7/038 , C07C69/54 , C07C219/08 , C07C303/32 , C07C309/20 , C08F228/02 , C08F232/02 , C08F2220/382 , G03F7/039 , G03F7/325 , G03F7/38 , Y10S430/111
摘要： A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a tertiary ester type acid labile group having a plurality of methyl or ethyl groups on alicycle and an acid generator onto a substrate, prebaking, exposing to high-energy radiation, baking, and developing in an organic solvent developer so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high dissolution contrast during organic solvent development and forms a fine hole or trench pattern of dimensional uniformity.
摘要翻译： 通过将包含聚合物的抗蚀剂组合物包含在基材上，包含具有在脂环上具有多个甲基或乙基的叔酯型酸不稳定基团的重复单元的聚合物，预烘烤，暴露于高能量辐射 ，在有机溶剂显影剂中烘烤和显影，使得抗蚀剂膜的未曝光区域被溶解，并且抗蚀剂膜的曝光区域不溶解。 抗蚀剂组合物在有机溶剂显影期间表现出高的溶解对比度，并形成尺寸均匀性的细孔或沟槽图案。
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公开(公告)号：US20140272707A1
公开(公告)日：2014-09-18
申请号：US14172355
申请日：2014-02-04
CPC分类号： G03F7/0397 , C08F220/24 , G03F7/0045 , G03F7/0046 , G03F7/11 , G03F7/20 , G03F7/2041
摘要： A sulfonium salt having formula (1a) is provided wherein R1 is H, F, CH3 or CF3, R1a to R1m are each independently H or a monovalent hydrocarbon group, L is a single bond or divalent hydrocarbon group, X is a divalent alkylene group optionally substituted with fluorine, and n is 0 or 1. The sulfonium salt having a polymerizable anion provides for efficient scission of acid labile groups in a chemically amplified resist composition, and it is a very useful monomer from which a base resin for resist use is prepared.
摘要翻译： 提供具有式（1a）的锍盐，其中R 1为H，F，CH 3或CF 3，R 1a至R 1a各自独立地为H或一价烃基，L为单键或二价烃基，X为二价亚烷基 任选被氟取代，并且n为0或1.具有可聚合阴离子的锍盐提供化学放大抗蚀剂组合物中酸不稳定基团的有效断裂，并且它是一种非常有用的单体，抗蚀剂使用的基础树脂是 准备
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公开(公告)号：US11693314B2
公开(公告)日：2023-07-04
申请号：US17198575
申请日：2021-03-11
发明人： Teppei Adachi , Shinya Yamashita , Masaki Ohashi , Tomohiro Kobayashi , Kenichi Oikawa , Takayuki Fujiwara
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , G03F7/11 , C07D307/93 , C07D493/18 , C07D327/04 , C08F220/18 , C07C381/12 , G03F7/20
CPC分类号： G03F7/0045 , C07C381/12 , C07D307/93 , C07D327/04 , C07D493/18 , C08F220/1807 , C08F220/1808 , G03F7/0382 , G03F7/0397 , G03F7/11 , G03F7/2006 , G03F7/2041
摘要： A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.
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公开(公告)号：US11662663B2
公开(公告)日：2023-05-30
申请号：US16596022
申请日：2019-10-08
CPC分类号： G03F7/038 , G03F7/0043 , G03F7/0048 , G03F7/092
摘要： A composition comprising (A) a polymer comprising recurring units (a1) having a carboxyl group protected with an acid labile group and recurring units (a2) having a cyclic ester, cyclic carbonate or cyclic sulfonate structure, (B) a thermal acid generator, and (C) an organic solvent is suited to form a protective film between a substrate and a resist film. Even when a metal-containing resist film is used, the protective film is effective for preventing the substrate from metal contamination.
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公开(公告)号：US20190033716A1
公开(公告)日：2019-01-31
申请号：US16042179
申请日：2018-07-23
发明人： Masaki Ohashi , Jun Hatakeyama , Teppei Adachi
摘要： A polymer comprising recurring units derived from a sulfonium salt of specific structure having a polymerizable group is coated to form a resist film which is amenable to precise micropatterning because of improved LWR, CDU and resolution.
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