公开(公告)号：US08859191B2

公开(公告)日：2014-10-14

申请号：US13466126

申请日：2012-05-08

申请人： Yushi Matsumura ,  Shinya Minegishi ,  Satoru Murakami ,  Yusuke Anno ,  Shinya Nakafuji ,  Kazuhiko Komura ,  Kyoyu Yasuda

发明人： Yushi Matsumura ,  Shinya Minegishi ,  Satoru Murakami ,  Yusuke Anno ,  Shinya Nakafuji ,  Kazuhiko Komura ,  Kyoyu Yasuda

IPC分类号： G03F7/26 ,  C07D487/04 ,  C07D407/12 ,  H05K1/00 ,  B44C1/22

CPC分类号： G03F7/027 ,  B44C1/22 ,  C07D407/12 ,  C07D487/04 ,  G03F7/004 ,  G03F7/11 ,  H05K1/00

摘要： Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.

摘要翻译： 提供一种能够形成能够形成抗蚀剂下层膜的图案的方法，该方法能够在保持耐蚀刻性的同时使用碱液容易地除去。 本发明提供一种形成图案的方法，该方法包括：（1）使用含有具有可碱解官能团的化合物的形成抗蚀剂下层膜的组合物在基材上形成抗蚀剂下层膜; （2）在抗蚀剂下层膜上形成抗蚀剂图案; （3）使用抗蚀剂图案作为掩模，通过干蚀刻抗蚀剂下层膜和基板在基板上形成图案; 和（4）用碱液除去抗蚀剂下层膜。

公开(公告)号：US20120285929A1

公开(公告)日：2012-11-15

申请号：US13466126

申请日：2012-05-08

申请人： Yushi MATSUMURA ,  Shinya Minegishi ,  Satoru Murakami ,  Yusuke Anno ,  Shinya Nakafuji ,  Kazuhiko Komura ,  Kyoyu Yasuda

发明人： Yushi MATSUMURA ,  Shinya Minegishi ,  Satoru Murakami ,  Yusuke Anno ,  Shinya Nakafuji ,  Kazuhiko Komura ,  Kyoyu Yasuda

IPC分类号： B44C1/22 ,  C07D487/04 ,  C07D407/12

CPC分类号： G03F7/027 ,  B44C1/22 ,  C07D407/12 ,  C07D487/04 ,  G03F7/004 ,  G03F7/11 ,  H05K1/00

摘要： Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.

摘要翻译： 提供一种能够形成能够形成抗蚀剂下层膜的图案的方法，该方法能够在保持耐蚀刻性的同时使用碱液容易地除去。 本发明提供一种形成图案的方法，该方法包括：（1）使用含有具有可碱解官能团的化合物的形成抗蚀剂下层膜的组合物在基材上形成抗蚀剂下层膜; （2）在抗蚀剂下层膜上形成抗蚀剂图案; （3）使用抗蚀剂图案作为掩模，通过干蚀刻抗蚀剂下层膜和基板在基板上形成图案; 和（4）用碱液除去抗蚀剂下层膜。

公开(公告)号：US09029069B2

公开(公告)日：2015-05-12

申请号：US13434781

申请日：2012-03-29

申请人： Shin-ya Minegishi ,  Yushi Matsumura ,  Shinya Nakafuji ,  Kazuhiko Komura ,  Takanori Nakano ,  Satoru Murakami ,  Kyoyu Yasuda ,  Makoto Sugiura

发明人： Shin-ya Minegishi ,  Yushi Matsumura ,  Shinya Nakafuji ,  Kazuhiko Komura ,  Takanori Nakano ,  Satoru Murakami ,  Kyoyu Yasuda ,  Makoto Sugiura

IPC分类号： G03F7/025 ,  G03F7/09

CPC分类号： G03F7/09

摘要： A resist underlayer film-forming composition includes a polymer including a structural unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of from 3000 to 10000, and a solvent. Each of R3 to R8 independently represents a group shown by a formula (2), a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 2 to 10 carbon atoms, an aryl group having 6 to 14 carbon atoms, or a glycidyl ether group having 3 to 6 carbon atoms, wherein at least one of R3 to R8 represents the group shown by the formula (2).

摘要翻译： 抗蚀剂下层膜形成组合物包括含有式（1）所示的结构单元，聚苯乙烯换算的重均分子量为3000〜10000的聚合物和溶剂。 R 3〜R 8各自独立地表示由式（2）表示的基团，氢原子，羟基，碳原子数1〜6的烷基，碳原子数1〜6的烷氧基，烷氧基羰基2 至10个碳原子，具有6至14个碳原子的芳基或具有3至6个碳原子的缩水甘油醚基团，其中R3至R8中的至少一个表示式（2）所示的基团。

公开(公告)号：US20120270157A1

公开(公告)日：2012-10-25

申请号：US13434781

申请日：2012-03-29

申请人： Shin-ya Minegishi ,  Yushi Matsumura ,  Shinya Nakafuji ,  Kazuhiko Komura ,  Takanori Nakano ,  Satoru Murakami ,  Kyoyu Yasuda ,  Makoto Sugiura

发明人： Shin-ya Minegishi ,  Yushi Matsumura ,  Shinya Nakafuji ,  Kazuhiko Komura ,  Takanori Nakano ,  Satoru Murakami ,  Kyoyu Yasuda ,  Makoto Sugiura

IPC分类号： C08L61/06 ,  G03F7/20

CPC分类号： G03F7/09

摘要： A resist underlayer film-forming composition includes a polymer including a structural unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of from 3000 to 10000, and a solvent. Each of R3 to R8 independently represents a group shown by a formula (2), a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 2 to 10 carbon atoms, an aryl group having 6 to 14 carbon atoms, or a glycidyl ether group having 3 to 6 carbon atoms, wherein at least one of R3 to R8 represents the group shown by the formula (2).

摘要翻译： 抗蚀剂下层膜形成组合物包括含有式（1）所示的结构单元，聚苯乙烯换算的重均分子量为3000〜10000的聚合物和溶剂。 R 3〜R 8各自独立地表示由式（2）表示的基团，氢原子，羟基，碳原子数1〜6的烷基，碳原子数1〜6的烷氧基，烷氧基羰基2 至10个碳原子，具有6至14个碳原子的芳基或具有3至6个碳原子的缩水甘油醚基团，其中R3至R8中的至少一个表示式（2）所示的基团。

公开(公告)号：US08513133B2

公开(公告)日：2013-08-20

申请号：US13221853

申请日：2011-08-30

申请人： Shin-ya Minegishi ,  Yushi Matsumura ,  Shinya Nakafuji ,  Kazuhiko Komura ,  Takanori Nakano ,  Satoru Murakami ,  Kyoyu Yasuda ,  Makoto Sugiura

发明人： Shin-ya Minegishi ,  Yushi Matsumura ,  Shinya Nakafuji ,  Kazuhiko Komura ,  Takanori Nakano ,  Satoru Murakami ,  Kyoyu Yasuda ,  Makoto Sugiura

IPC分类号： H01L21/311

CPC分类号： G03F7/091 ,  C08G8/08 ,  C08L61/06 ,  G03F7/094

摘要： A resist underlayer film-forming composition includes (A) a polymer that includes a repeating unit shown by a formula (1), and has a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and (B) a solvent, wherein R3 to R8 individually represent a group shown by the following formula (2) or the like, —O—R1≡R2  (2) wherein R1 represents a single bond or the like, and R2 represents a hydrogen atom or the like.

摘要翻译： 抗蚀剂下层膜形成用组合物包括（A）包含式（1）所示的重复单元，聚苯乙烯换算的重均分子量为3000〜10000的聚合物，（B）溶剂，其中， R 8分别表示下述式（2）所示的基团等，-O-R 1 = R 2（2）其中，R 1表示单键等，R 2表示氢原子等。

公开(公告)号：US20100167024A1

公开(公告)日：2010-07-01

申请号：US12647375

申请日：2009-12-24

申请人： Norihiro Natsume ,  Takanori Kishida ,  Hayato Namai ,  Kyoyu Yasuda ,  Satoshi Dei ,  Koichi Hasegawa

发明人： Norihiro Natsume ,  Takanori Kishida ,  Hayato Namai ,  Kyoyu Yasuda ,  Satoshi Dei ,  Koichi Hasegawa

IPC分类号： B32B3/10 ,  G03F7/004 ,  G03F7/20

CPC分类号： G03F7/0757 ,  Y10T428/24802

摘要： A negative-tone radiation-sensitive composition includes a polymer, a photoacid generator, and a solvent. The polymer has a polystyrene-reduced weight average molecular weight of 4000 to 200,000, and is obtained by hydrolysis and condensation of at least one hydrolyzable silane compound among compounds shown by RaSi(OR1)4-a, Si(OR2)4 and R3x(R4O)3-xSi—(R7)z—Si(OR5)3-yR6y. “R” represents a fluorine atom, an alkylcarbonyloxy group, or a linear or branched alkyl group having 1 to 5 carbon atoms. “R1” represents a monovalent organic group. “R2” represents a monovalent organic group. “R3” and “R6” individually represent a fluorine atom, an alkylcarbonyloxy group, or a linear or branched alkyl group having 1 to 5 carbon atoms “R4” and “R5” individually represent a monovalent organic group. “R7” represents an oxygen atom, a phenylene group, or a group —(CH2)m—. The content of units derived from the compound RaSi(OR1)4-a is 50 to 100 mol % of the total units forming the polymer.

摘要翻译： 负色辐射敏感组合物包括聚合物，光致酸产生剂和溶剂。 聚苯乙烯换算的重均分子量为4000〜200,000，通过RaSi（OR1）4-a，Si（OR2）4和R3x（OR1）4-a表示的化合物中至少一种可水解硅烷化合物的水解和缩合得到， R4O）3-xSi-（R7）z-Si（OR5）3-yR6y。 “R”表示氟原子，烷基羰基氧基或碳原子数1〜5的直链或支链烷基。 “R1”表示一价有机基团。 “R2”表示一价有机基团。 “R3”和“R6”分别表示氟原子，烷基羰基氧基或碳原子数为1〜5的直链或支链烷基，“R4”和“R5”分别表示一价有机基团。 “R7”表示氧原子，亚苯基或基团 - （CH2）m-。 衍生自化合物RaSi（OR1）4-a的单元的含量为形成聚合物的总单元的50〜100摩尔％。

公开(公告)号：US09170492B2

公开(公告)日：2015-10-27

申请号：US12722529

申请日：2010-03-12

申请人： Tomoharu Kawazu ,  Masato Tanaka ,  Takashi Mori ,  Kazunori Takanashi ,  Kyoyu Yasuda

发明人： Tomoharu Kawazu ,  Masato Tanaka ,  Takashi Mori ,  Kazunori Takanashi ,  Kyoyu Yasuda

IPC分类号： G03F7/075 ,  G03F7/09 ,  G03F7/30 ,  G03F7/36 ,  C08G77/04 ,  C08G77/00

CPC分类号： G03F7/0752 ,  C08G77/04 ,  C08G77/80 ,  G03F7/0757 ,  G03F7/091 ,  G03F7/094 ,  G03F7/30 ,  G03F7/36

摘要： A silicon-containing film-forming composition includes a polysiloxane and organic solvent. The polysiloxane includes a first structural unit, a second structural unit, and a third structural unit. The first structural unit is derived from a tetraalkoxysilane. The second structural unit is derived from a compound shown by a formula (1), wherein R1 represents a hydrogen atom or an electron-donating group, at least one R1 is an electron-donating group, R2 represents a monovalent organic group, and n represents 0 or 1. The third structural unit is derived from a compound shown by a formula (2), wherein R3 represents an alkyl group having 1 to 8 carbon atoms, and R4 represents a monovalent organic group.

摘要翻译： 含硅膜组合物包含聚硅氧烷和有机溶剂。 聚硅氧烷包括第一结构单元，第二结构单元和第三结构单元。 第一结构单元衍生自四烷氧基硅烷。 第二结构单元衍生自式（1）所示的化合物，其中R1表示氢原子或给电子基团，至少一个R 1是给电子基团，R 2表示一价有机基团，n 表示0或1.第三结构单元衍生自式（2）所示的化合物，其中R 3表示具有1至8个碳原子的烷基，R 4表示一价有机基团。

公开(公告)号：US09140985B2

公开(公告)日：2015-09-22

申请号：US12722529

申请日：2010-03-12

申请人： Tomoharu Kawazu ,  Masato Tanaka ,  Takashi Mori ,  Kazunori Takanashi ,  Kyoyu Yasuda

发明人： Tomoharu Kawazu ,  Masato Tanaka ,  Takashi Mori ,  Kazunori Takanashi ,  Kyoyu Yasuda

IPC分类号： G03F7/075 ,  G03F7/09 ,  G03F7/30 ,  G03F7/36 ,  C08G77/04 ,  C08G77/00

摘要： A silicon-containing film-forming composition includes a polysiloxane and organic solvent. The polysiloxane includes a first structural unit, a second structural unit, and a third structural unit. The first structural unit is derived from a tetraalkoxysilane. The second structural unit is derived from a compound shown by a formula (1), wherein R1 represents a hydrogen atom or an electron-donating group, at least one R1 is an electron-donating group, R2 represents a monovalent organic group, and n represents 0 or 1. The third structural unit is derived from a compound shown by a formula (2), wherein R3 represents an alkyl group having 1 to 8 carbon atoms, and R4 represents a monovalent organic group.

公开(公告)号：US20100178620A1

公开(公告)日：2010-07-15

申请号：US12624427

申请日：2009-11-24

申请人： Satoshi DEI ,  Kyoyu Yasuda ,  Koichi Hasegawa ,  Fumihiro Toyokawa ,  Masato Tanaka ,  Keiji Konno

发明人： Satoshi DEI ,  Kyoyu Yasuda ,  Koichi Hasegawa ,  Fumihiro Toyokawa ,  Masato Tanaka ,  Keiji Konno

IPC分类号： B05D1/32 ,  G03F7/20 ,  C09D183/04

CPC分类号： G03F7/0757 ,  C09D183/04 ,  G03F7/0035 ,  G03F7/0048 ,  G03F7/40

摘要： A method for forming an inverted pattern includes forming a photoresist pattern on a substrate, filling a space formed by the photoresist pattern with a resin composition including a polysiloxane and a solvent, and removing the photoresist pattern to form an inverted pattern. The resin composition includes (A) a polysiloxane obtained by hydrolysis and condensation of two types of hydrolysable silane compounds having a specific structure, and (B) an organic solvent containing an alcohol or ether having a specific structure.

摘要翻译： 形成反转图案的方法包括在基板上形成光致抗蚀剂图案，用由聚硅氧烷和溶剂的树脂组合物填充由光致抗蚀剂图案形成的空间，并除去光致抗蚀剂图案以形成倒置图案。 树脂组合物包含（A）通过水解和缩合具有特定结构的两种类型的可水解硅烷化合物获得的聚硅氧烷，和（B）含有特定结构的醇或醚的有机溶剂。