公开(公告)号：US20100078827A1

公开(公告)日：2010-04-01

申请号：US12631592

申请日：2009-12-04

申请人： Shinichi DOMAE ,  Hiroshi MASUDA ,  Yoshiaki KATO ,  Kousaku YANO

发明人： Shinichi DOMAE ,  Hiroshi MASUDA ,  Yoshiaki KATO ,  Kousaku YANO

IPC分类号： H01L23/48 ,  H01L21/60

CPC分类号： H01L22/34 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76805 ,  H01L21/76838 ,  H01L21/76843 ,  H01L23/5226 ,  H01L23/53219 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multilayer wiring structure of a semiconductor device having a stacked structure is arranged to restrain reliability degradation due to stress applied to the region of wiring between opposite upper and lower plugs. The rate of overlap of contact surface between upper plug and wiring on contact surface between lower plug and wiring, is small to the extent that no void is generated. The multilayer wiring structure is produced such that no grain boundary is contained in the region of wiring between upper and lower plugs. The difference in thermal expansion coefficient between the material of wiring and the material of upper and lower plugs, is small to the extent that no void is generated.

摘要翻译： 布置具有层叠结构的半导体器件的多层布线结构，以抑制由于施加到相对的上部和下部插塞之间的布线区域的应力的可靠性降低。 上插头与下插头与布线之间的接触面上的布线之间的接触面的重叠速率小，不产生空隙的程度。 制造多层布线结构，使得在上部和下部插塞之间的布线区域中不包含晶界。 布线材料与上，下插头材料之间的热膨胀系数差异小到不产生空隙的程度。

公开(公告)号：US20090160993A1

公开(公告)日：2009-06-25

申请号：US12330050

申请日：2008-12-08

申请人： Yoshiaki KATO ,  Akiyoshi KOHNO ,  Hiroshi MATSUMOTO ,  Takeshi FUJITA

发明人： Yoshiaki KATO ,  Akiyoshi KOHNO ,  Hiroshi MATSUMOTO ,  Takeshi FUJITA

IPC分类号： H04N5/335

CPC分类号： H04N5/335 ,  H04N5/372 ,  H04N5/3765

摘要： An objective of the present invention is to provide the solid-state imaging device and the driving method thereof which can control: a poor picture quality, such as blooming, to maximize a dynamic range of the photodiode; and a poor picture quality resulted from an incomplete read-out operation. A solid-state imaging device in the present invention includes: a solid-state imaging element; and a driving pulse controlling unit applying a driving pulse to each of read-out gates of a column CCD. The driving pulse controlling unit transfers in a column direction signal charge within a charge transfer region of the column CCD by applying a column transfer clock having a LOW level voltage and a MIDDLE level voltage, and the LOW level voltage and the MIDDLE level voltage are minus voltages.

摘要翻译： 本发明的目的是提供一种可以控制如图像质量差的固态成像装置及其驱动方法，以使光电二极管的动态范围最大化; 并且由于读取操作不完整导致的图像质量差。 本发明的固态成像装置包括：固态成像元件; 以及驱动脉冲控制单元，将驱动脉冲施加到列CCD的每个读出门。 驱动脉冲控制单元通过施加具有低电平电压和中等电平的列传送时钟，在列CCD的电荷传送区域内的列方向上传送信号电荷，并且低电平电压和中间电平电压为负 电压。

公开(公告)号：US20080018770A1

公开(公告)日：2008-01-24

申请号：US11776979

申请日：2007-07-12

申请人： Yoshiaki KATO

发明人： Yoshiaki KATO

IPC分类号： H04N3/14

CPC分类号： H04N9/045 ,  H04N5/3458 ,  H04N5/3728

摘要： A solid-state imaging device includes: a plurality of light-receiving elements which are arranged by rows and columns; a plurality of vertical transfer units each of which is arranged for a corresponding column of the light-receiving elements, and vertically transfers a plurality of signal packets and dummy packets, the signal packet including charges read from the light-receiving elements, the dummy packets being packets other than the signal packets, and N columns of the vertical transfer units forming one column group; a plurality of hold units which are arranged for final stages of the vertical transfer units in N columns except M column in the column group, and each of which mixes, holds, and vertically transfers charges of the signal packets and the dummy packet without depending on vertical transfer from upstream of the corresponding vertical transfer unit; a horizontal transfer unit which mixes, holds, and horizontally transfers the charges transferred from the hold units or the vertical transfer units in the M column in the column group; and a driving unit which drives the vertical transfer units, the hold units, and the horizontal transfer unit, wherein the driving unit perform the driving, so that a signal packet and a plurality of dummy packets in an identical column are mixed together into a mixed packet in each of the holding units, charges of the mixed packet are held in the hold unit, the held charges of the mixed packet are vertically transferred to the horizontal transfer unit so that the mixed packet is mixed with a mixed packet of a different hold unit which is vertically transferred from the different hold unit to the horizontal transfer unit.

摘要翻译： 一种固态成像装置，包括：多个受行列排列的光接收元件; 多个垂直传送单元，每个垂直传送单元被布置成用于相应列的光接收元件，并且垂直地传送多个信号分组和虚拟分组，所述信号分组包括从光接收元件读取的电荷，虚拟分组 作为信号分组以外的分组，构成1列组的垂直传送单元的N列; 多个保持单元，其被配置为垂直传送单元的最后阶段，除了列组中的M列之外，N列除外，并且每个保持单元混合，保持并垂直地传送信号分组和虚拟分组的费用，而不依赖于 从垂直传输单元的上游垂直传输; 水平传送单元，其混合，保持和水平传送从列组中的M列中的保持单元或垂直传送单元传送的电荷; 以及驱动所述垂直传送单元，所述保持单元和所述水平传送单元的驱动单元，其中，所述驱动单元执行所述驱动，使得相同列中的信号分组和多个虚拟分组混合在一起成为混合 每个保持单元中的分组，混合分组的费用被保持在保持单元中，混合分组的保持的电荷被垂直传送到水平传送单元，使得混合分组与不同的保持的混合分组混合 单元，其从不同的保持单元垂直传送到水平传送单元。

公开(公告)号：US20070295991A1

公开(公告)日：2007-12-27

申请号：US11757533

申请日：2007-06-04

申请人： Yoshiaki KATO ,  Yoshiharu ANDA ,  Akiyoshi TAMURA

发明人： Yoshiaki KATO ,  Yoshiharu ANDA ,  Akiyoshi TAMURA

IPC分类号： H01L29/812 ,  H01L21/338

CPC分类号： H01L29/8128 ,  H01L29/42316 ,  H01L29/66863 ,  H01L29/778

摘要： A semiconductor device according to the present invention includes: a semiconductor substrate; a channel layer formed on the semiconductor substrate; a donor layer formed on the channel layer; a first Schottky layer formed on the donor layer; a second Schottky layer formed on the first Schottky layer; a first gate electrode formed on the first Schottky layer to form a Schottky barrier junction with the first Schottky layer; a first source electrode and a first drain electrode formed so as to sandwich the first gate electrode and electrically connected to the channel layer; a second gate electrode formed on the second Schottky layer and made of a material different from the first gate electrode to form a Schottky barrier junction with the second Schottky layer; and a second source electrode and a second drain electrode formed so as to sandwich the second gate electrode and electrically connected to the channel layer.

摘要翻译： 根据本发明的半导体器件包括：半导体衬底; 形成在所述半导体衬底上的沟道层; 在沟道层上形成的施主层; 形成在供体层上的第一肖特基层; 形成在第一肖特基层上的第二肖特基层; 形成在所述第一肖特基层上以与所述第一肖特基层形成肖特基势垒结的第一栅电极; 第一源电极和第一漏电极，其形成为夹着所述第一栅电极并电连接到所述沟道层; 第二栅电极，形成在所述第二肖特基层上，并且由与所述第一栅电极不同的材料制成，以与所述第二肖特基层形成肖特基势垒结; 以及第二源电极和第二漏电极，其形成为夹着所述第二栅极并电连接到所述沟道层。

公开(公告)号：US20110025824A1

公开(公告)日：2011-02-03

申请号：US12841925

申请日：2010-07-22

申请人： Yoshiaki KATO ,  Toshinori Miyamura ,  Akihiko Shimeno

发明人： Yoshiaki KATO ,  Toshinori Miyamura ,  Akihiko Shimeno

IPC分类号： H04N13/02 ,  G03B35/00

CPC分类号： G03B35/00 ,  H04N5/23212 ,  H04N13/122 ,  H04N13/156 ,  H04N13/161 ,  H04N13/178 ,  H04N13/239 ,  H04N13/25 ,  H04N13/296

摘要： First macro photography is performed with each of the imaging systems being focused on a main subject to obtain first images, second photography is performed with one of the plurality of imaging systems being focused on a position farther away than the main subject to obtain a second image, processing is performed on each of the first images to transparentize an area other than the main subject, and each of the transparentized first images and an area other than the main subject of the second image are combined to generate a combined image corresponding to each of the imaging systems.

摘要翻译： 执行第一微距拍摄，其中每个成像系统聚焦在主要对象上以获得第一图像，第二次拍摄是在多个成像系统中的一个被聚焦在比主要对象更远的位置上执行以获得第二图像 对每个第一图像执行处理，以使除主要对象以外的区域透明化，并且将每个透明化的第一图像和除了第二图像的主要对象之外的区域组合，以生成与每个 成像系统。

公开(公告)号：US20070201191A1

公开(公告)日：2007-08-30

申请号：US11679702

申请日：2007-02-27

申请人： Shinji TAKAHASHI ,  Yoshiaki KATO ,  Harehide SASAKI ,  Katsumasa MATSUOKA ,  Hiroshi KOBAYASHI

发明人： Shinji TAKAHASHI ,  Yoshiaki KATO ,  Harehide SASAKI ,  Katsumasa MATSUOKA ,  Hiroshi KOBAYASHI

IPC分类号： H02B1/00

CPC分类号： H05K7/1417

摘要： A fixing member is used for fixing a case to a printed circuit board. The fixing member is mounted at a mount-receiving portion, which is formed at the case, by being inserted along a side wall of the mount-receiving portion. At the fixing member, a plate spring portion is formed at a predetermined position. The plate spring portion projects to a side of abutting against the side wall. In the state in which the fixing member is mounted at the mount-receiving portion, the plate spring portion is pressed by the side wall and flexes. Consequently, the fixing member is subject to a pressure force in a direction away from the side wall. In addition, the fixing member is supported from a rear face side by support portions which structure the mount-receiving portion. Thus, the fixing member is gripped in a direction intersecting the side wall.

摘要翻译： 固定件用于将外壳固定到印刷电路板上。 固定构件通过沿着安装接收部分的侧壁插入而安装在形成在壳体处的安装接收部分处。 在固定构件上，在预定位置形成板簧部。 板簧部分突出到抵靠侧壁的一侧。 在固定构件安装在安装接收部分的状态下，板簧部分被侧壁按压并弯曲。 因此，固定构件受到远离侧壁的方向的压力。 此外，固定构件由支撑部分从背面侧支撑，该支撑部分构成安装接收部分。 因此，固定构件沿与侧壁相交的方向被夹持。

公开(公告)号：US20090230482A1

公开(公告)日：2009-09-17

申请号：US12404562

申请日：2009-03-16

申请人： Yoshiaki KATO ,  Yoshiharu ANDA ,  Akiyoshi TAMURA

发明人： Yoshiaki KATO ,  Yoshiharu ANDA ,  Akiyoshi TAMURA

IPC分类号： H01L27/088 ,  H01L21/28

CPC分类号： H01L27/0605 ,  H01L27/0883 ,  H01L29/66462 ,  H01L29/7783

摘要： A semiconductor device in which an E-FET and a D-FET are integrated on the same substrate, wherein an epitaxial layer includes, in the following order from the semiconductor substrate: a first threshold adjustment layer that adjusts a threshold voltage of a gate of the E-FET and a threshold voltage of a gate of the D-FET; a first etching-stopper layer that stops etching performed from an uppermost layer to a layer abutting on the first etching-stopper layer; a second threshold adjustment layer that adjusts the threshold voltage of the gate of the D-FET; and a second etching-stopper layer that stops the etching performed from the uppermost layer to a layer abutting on the second etching-stopper layer, and at least one of the first etching-stopper layer and the second threshold adjustment layer includes an n-type doped region.

摘要翻译： 一种半导体器件，其中E-FET和D-FET集成在同一衬底上，其中外延层从半导体衬底按以下顺序包括：第一阈值调节层，其调节栅极的阈值电压 E-FET和D-FET的栅极的阈值电压; 第一蚀刻停止层，其停止从最上层到邻接于所述第一蚀刻停止层的层的蚀刻; 调节D-FET的栅极的阈值电压的第二阈值调整层; 以及第二蚀刻停止层，其将从最上层进行的蚀刻停止到与第二蚀刻停止层相邻的层，并且第一蚀刻停止层和第二阈值调整层中的至少一个包括n型 掺杂区域。

公开(公告)号：US20070236592A1

公开(公告)日：2007-10-11

申请号：US11693300

申请日：2007-03-29

申请人： Yoshiaki KATO

发明人： Yoshiaki KATO

IPC分类号： H04N5/335

CPC分类号： H04N9/045 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14843 ,  H04N5/3595 ,  H04N5/37213

摘要： Vertical transfer portions for transferring signal charges from photoelectric conversion portions in a vertical direction and a horizontal transfer portion for transferring them in a horizontal direction are provided, and each of a plurality of vertical transfer stages constituting the vertical transfer portion is provided with a plurality of phases of transfer electrodes. The transfer electrodes at a vertical last stage include independent transfer electrodes (V3R, V5R) for at least two phases, that are independent of the other vertical transfer stages, have identical configurations repeated in a unit of n columns, and are in common among corresponding columns in a plurality of the units of n columns and independent of the independent transfer electrodes belonging to the other columns in the unit of n columns. A signal transfer stage from which the signal charge is read out and a dummy transfer stage from which the signal charge is not read out are formed alternately, the signal charge at the signal transfer stage and a dummy signal at the following dummy transfer stage are mixed together at the vertical last stage and then transferred to the horizontal transfer portion. In the case where a dummy transfer stage is formed for transfer, it is possible to suppress transfer degradation and mix a dummy signal with a signal charge.

摘要翻译： 设置用于从垂直方向的光电转换部分传送信号电荷的垂直转印部分和用于在水平方向上转印它们的水平转印部分，并且构成垂直转印部分的多个垂直转印台中的每一个设置有多个 转移电极的相。 垂直最后一级的转移电极包括独立于其他垂直转移级的至少两相的独立转移电极（V 3 R，V 5 R），具有以n列为单位重复的相同配置，并且 在n列的多个单元中的相应列之间是共同的，并且独立于以n列为单位属于其它列的独立传输电极。 将信号电荷读出的信号传送级和未读出信号电荷的虚拟传送级交替地形成，信号传送级的信号电荷和下一个虚拟传输级的虚拟信号混合 一起在垂直的最后阶段，然后转移到水平传送部分。 在形成用于传送的虚拟传送级的情况下，可以抑制传输劣化并将虚拟信号与信号电荷混合。

公开(公告)号：US20070165128A1

公开(公告)日：2007-07-19

申请号：US11621276

申请日：2007-01-09

申请人： Yoshiaki KATO

发明人： Yoshiaki KATO

IPC分类号： H04N5/335

CPC分类号： H01L27/14887 ,  H01L27/14837 ,  H01L27/14843 ,  H04N5/3592 ,  H04N5/3728

摘要： To provide a solid-state imaging apparatus which is capable of preventing electric charge from being injected from a semiconductor substrate while electric charge is being accumulated into photodiodes. The solid-state imaging apparatus includes a solid-state imaging device and a driving pulse control unit. The solid-state imaging device includes: a semiconductor substrate, photodiodes which are two-dimensionally formed on the semiconductor substrate, and vertical Charge-coupled devices (CCDs) having at least one arranged read-out gate and non-read-out gate for each of the photodiodes, the read-out gate being for reading out accumulated electric charge from the associated photodiode, and the non-read-out gate being not for reading out accumulated electric charge from the associated photodiode. The driving pulse control unit applies driving pulses sequentially to the respective read-out gates in order to change the read-out gates from stand-by LOW-voltage states to MIDDLE-voltage states, and apply a driving pulse for maintaining a LOW-voltage state of at least one of non-read-out gates adjacent to a last read-out gate in the order of the change among the non-read-out gates, during the change starting with a first read-out gate and ending with the last read-out gate.

摘要翻译： 提供一种固态成像装置，其能够在电荷积聚到光电二极管中时防止从半导体衬底注入电荷。 固态成像装置包括固态成像装置和驱动脉冲控制单元。 固态成像装置包括：半导体衬底，二维地形成在半导体衬底上的光电二极管以及具有至少一个布置的读出栅极和非读出栅极的垂直电荷耦合器件（CCD） 每个光电二极管，读出门用于从相关联的光电二极管读出累积的电荷，并且非读出门不用于从相关联的光电二极管读出累积的电荷。 驱动脉冲控制单元将驱动脉冲顺序地施加到各个读出门，以便将读出门从待机低电压状态改变为中等电压状态，并施加用于维持低电压的驱动脉冲 在从第一读出门开始的改变期间，以非读出门的改变的顺序，与最后的读出门相邻的非读出门中的至少一个的状态， 最后一个读出门。

公开(公告)号：US20110316109A1

公开(公告)日：2011-12-29

申请号：US13226783

申请日：2011-09-07

申请人： Takuya ASANO ,  Yoshiaki KATO ,  Takuya NOHARA ,  Sei SUZUKI

发明人： Takuya ASANO ,  Yoshiaki KATO ,  Takuya NOHARA ,  Sei SUZUKI

IPC分类号： H01L31/0216

CPC分类号： H01L27/14843 ,  H01L27/14818

摘要： A solid-state imaging device includes photoelectric conversion units, vertical transfer units including vertical transfer electrodes, a horizontal transfer unit, a distribution transfer unit including distribution transfer electrodes, and first light-shield layers and second light-shield layers provided on the vertical transfer units and the distribution transfer unit. The first light-shield layers and the second light-shield layers are conductive. The first light-shield layers are provided in a layer different from a layer in which the second light-shield layers are provided. At least one of the first light-shield layers serves as an interconnect electrically connected to the vertical transfer electrodes included in the same row, and at least one of the first light-shield layers on the distribution transfer unit serves as an interconnect electrically connected the distribution transfer electrodes. The first light-shield layers are disposed so as not to overlap with the horizontal transfer unit.

摘要翻译： 固态成像装置包括光电转换单元，包括垂直转印电极的垂直转印单元，水平转印单元，包括分布转印电极的分布转印单元，以及设置在垂直转印上的第一遮光层和第二遮光层 单位和配送单位。 第一遮光层和第二遮光层是导电的。 第一遮光层设置在与设置有第二遮光层的层不同的层中。 第一遮光层中的至少一个用作电连接到包括在同一行中的垂直传输电极的互连，并且分配传送单元上的第一遮光层中的至少一个用作互连电连接 分配转移电极。 第一遮光层设置成不与水平传送单元重叠。