摘要:
For the purpose of providing a urethane(meth)acrylate excellent in emulsifiability in water and a production method thereof, and a light curable aqueous emulsion using the urethane(meth)acrylate having a low viscosity and excellent in the curability, provided is a urethane(meth)acrylate being represented by the following general formula (1) and having a weight average molecular weight of 1,000 to 10,000: A1-O—(CONH—B1-NHCOO—C1-O)n-CONH—B1-NH—COO-D1 (1) wherein in formula (1), n represents a natural number of 1 to 30, A1 represents a residue of a hydroxyl group-containing (meth)acrylate, B1 represents a residue of diisocyanate, C1 represents a residue of a diol of an acyclic hydrocarbon or a cyclic hydrocarbon, and D1 represents a residue of a polyoxyalkylene glycol monoalkyl ether.
摘要:
Disclosed are a colorant which can realize an ink compositions possessing excellent lightfastness, waterfastness, color development, and rubbing/scratch resistance, and an ink composition containing the same. The ink composition comprises at least a colorant, a polymer covering the colorant and having, in its molecular chain, sites possessing ultraviolet absorbing activity and/or photostabilizing activity, water, and a water-soluble organic solvent. The ink composition according to the present invention include two preferred embodiments. In the ink composition according to the first preferred embodiment, the polymer functions as a dispersant and covers the colorant. In the ink composition according to the second preferred embodiment, the polymer is in the form of fine particles covering the colorant. Further, the colorant comprises: a dye or a pigment; and a polymer covering the colorant and having, in its molecular chain, sites possessing ultraviolet absorbing activity and/or photostabilizing activity, the dye or the pigment being in the form of fine particles.
摘要:
An ink composition for ink jet providing excellent in the curability based on ultraviolet irradiation in the presence of water or a solvent, the ejection stability with respect to the factors such as dot loss or flight deflection, and the storage stability of ink. Also provided herein is an ink composition for ink jet including: a pigment; a water-soluble organic solvent; a surfactant; at least either of a urethane (meth)acrylate being represented by the following general formula (1) and having a weight average molecular weight of 1,000 to 10,000 and a cross-linked urethane (meth)acrylate having a constitutional unit including the urethane (meth)acrylate; a compound having a radical polymerizable group(s); a photoradical polymerization initiator; and water: A1-O—(CONH—B1—NHCOO—C1—O)n—CONH—B1—NH—COO-D1 (1) where each of A1, B1, C1, D1, and n in formula (1) are described herein.
摘要:
Disclosed are an ink jet recording method, which can produce, on recording media, good images possessing good lightfastness, waterfastness, rubbing resistance/scratch resistance, and gloss, and a reaction solution and an ink composition for use in the ink jet recording method. After printing of an ink composition, the application of a first liquid to form a coating can improve the waterfastness, rubbing resistance/scratch resistance and gloss of records. The incorporation of a cationic emulsion containing sites possessing ultraviolet absorbing activity and/or photostabilizing activity into the reaction solution can improve the lightfastness of records.
摘要:
A method of producing a Pb-free copper-alloy sliding material containing 1.0 to 15.0% of Sn, 0.5 to 15.0% of Bi and 0.05 to 5.0% of Ag, and Ag and Bi from an Ag—Bi eutectic. If necessary, at least one of 0.1 to 5.0% of Ni, 0.02 to 0.2% P, 0.5 to 30.0% of Zn, and 1.0 to 10.0 mass % of at least one of a group consisting of Fe3P, Fe2P, FeB, NiB and AlN may be added.
摘要:
A semiconductor wafer having a surface with a thin film formed thereon is transported into a chamber and held by a holder. After an atmosphere provided in the chamber is replaced, flashes of light are directed from flash lamps in a light irradiation part toward the semiconductor wafer to perform a baking process on the thin film. The irradiation of the semiconductor wafer with light from halogen lamps in the light irradiation part also starts at the same time as the irradiation thereof with the flashes of light. The flashes of light emitted for an extremely short period of time and having a high intensity allow the surface temperature of the thin film to rise momentarily. This prevents the occurrence of abnormal grain growth resulting from prolonged baking in the film.
摘要:
A semiconductor wafer, on the surface of which a silicon dioxide base material and an amorphous silicon thin film are formed in this order, is carried into a chamber. An insulated gate bipolar transistor (IGBT) is connected with a power supply circuit to a flash lamp, and the IGBT makes an energization period to the flash lamp to be 0.01 millisecond or more and 1 millisecond or less, consequently making a flash light irradiation time to be 0.01 millisecond or more and 1 millisecond or less. Since a flash heat treatment is performed with a remarkably short flash light irradiation time, the excessive heating of the thin film of amorphous silicon is suppressed and harmful influence such as the exfoliation of the film is prevented.
摘要:
A film of silicon dioxide is formed on the silicon-germanium layer, and a high dielectric constant film is further formed on the film of silicon dioxide. First irradiation from a flash lamp is performed on the semiconductor wafer to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 3 milliseconds to 1 second. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 3 milliseconds to 1 second. This promotes the crystallization of the high dielectric constant film while suppressing the alleviation of distortion in the silicon-germanium layer.
摘要:
A semiconductor wafer in which a carbon thin film is formed on a surface of a silicon substrate implanted with impurities is irradiated with flash light emitted from flash lamps. Absorbing the flash light causes the temperature of the carbon thin film to increase. The surface temperature of the silicon substrate implanted with impurities is therefore increased to be higher than that in a case where no thin film is formed, and the sheet resistance value can be thereby decreased. When the semiconductor wafer with the carbon thin film formed thereon is irradiated with flash light in high concentration oxygen atmosphere, since the carbon of the thin film is oxidized to be vaporized, removal of the thin film is performed concurrently with flash heating.
摘要:
An image forming apparatus includes a sheet feeding device (1). The sheet feeding device (1) includes a sheet feeding cassette (2), a push-up member (4), a drive shaft (5), and a rotation detecting device (6). The rotation detecting device (6) includes an output gear connected to the drive shaft (5). The output gear includes a gear main body provided with a gear tooth on its outer edge; and an electrode holding member that is attached to the gear main body. The electrode holding member is rotatably provided in the case (9) and a rotating electrode is attached to the electrode holding member. The electrode holding member is formed of at least one thermoplastic resin selected from the group consisting of POM, PA, PBT, PP, PE, ABS resin, PS, PPE, PC, and PMMA. The gear main body is formed of a material whose strength is higher than thermoplastic resin of which the electrode holding member is formed.