Tetrafluoroethylene-ethylene type copolymer
    2.
    发明授权
    Tetrafluoroethylene-ethylene type copolymer 失效
    四氟乙烯 - 乙烯型共聚物

    公开(公告)号:US4521575A

    公开(公告)日:1985-06-04

    申请号:US576426

    申请日:1984-02-02

    CPC分类号: C08F210/02 C08F214/265

    摘要: A copolymer comprising monomeric units of tetrafluoroethylene, ethylene and at least one monomeric compound selected from the group consisting of 2-trifluoromethylpropylene and 2-methyl-1,1,3,3,3-pentafluoropropylene, which has a improved crack resistance at a high temperature.

    摘要翻译: 一种包含四氟乙烯,乙烯和至少一种选自2-三氟甲基丙烯和2-甲基-1,1,3,3,3-五氟丙烯的单体单元的共聚物,其在高温下具有改善的抗裂性 温度。

    Power supply apparatus and power supply method
    4.
    发明授权
    Power supply apparatus and power supply method 有权
    电源装置及电源方式

    公开(公告)号:US08324873B2

    公开(公告)日:2012-12-04

    申请号:US12636764

    申请日:2009-12-13

    IPC分类号: G05F1/613

    CPC分类号: H02M3/1584

    摘要: A power supply apparatus is provided which includes: a first switch provided between an inductor and a terminal to which a reference voltage is applied; a second switch provided between the inductor and an output terminal; a first comparator circuit that compares an input voltage with a first comparison voltage; a signal generating circuit that outputs a frequency signal according to an output from the first comparator circuit; and a first control circuit that controls the first and second switches based on an output from the signal generating circuit to control an electrical current flowing into the inductor.

    摘要翻译: 提供了一种电源装置,其包括:设置在电感器和施加了参考电压的端子之间的第一开关; 设置在电感器和输出端子之间的第二开关; 第一比较器电路,其将输入电压与第一比较电压进行比较; 信号发生电路,其根据来自所述第一比较器电路的输出输出频率信号; 以及第一控制电路,其基于来自信号发生电路的输出来控制第一和第二开关,以控制流入电感器的电流。

    Method for manufacturing semiconductor device
    5.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US07910431B2

    公开(公告)日:2011-03-22

    申请号:US12149320

    申请日:2008-04-30

    IPC分类号: H01L21/336

    摘要: On a surface of a Si substrate, a nonvolatile memory cell, an nMOS transistor, and a pMOS transistor are formed, and thereafter an interlayer insulation film covering the nonvolatile memory cell, the nMOS transistor, and the pMOS transistor is formed. Next, in the interlayer insulation film, there are formed plural contact plugs connected respectively to a control gate of the nonvolatile memory cell, a source or a drain of the nMOS transistor, and a source or a drain of the pMOS transistor. Thereafter, there is formed a single-layer wiring connecting the control gate to the sources or drains of the nMOS transistor and the pMOS transistor via the plural contact plugs.

    摘要翻译: 在Si衬底的表面上形成非易失性存储单元,nMOS晶体管和pMOS晶体管,然后形成覆盖非易失性存储单元,nMOS晶体管和pMOS晶体管的层间绝缘膜。 接下来,在层间绝缘膜中,形成有分别连接到非易失性存储单元的控制栅极,nMOS晶体管的源极或漏极以及pMOS晶体管的源极或漏极的多个接触插塞。 此后,形成了通过多个接触插塞将控制栅极连接到nMOS晶体管和pMOS晶体管的源极或漏极的单层布线。

    WDM optical transmission system and an optical transmission line thereof
    6.
    发明授权
    WDM optical transmission system and an optical transmission line thereof 失效
    WDM光传输系统及其光传输线

    公开(公告)号:US06744990B1

    公开(公告)日:2004-06-01

    申请号:US09434679

    申请日:1999-11-05

    IPC分类号: H04B1012

    摘要: An object of the present invention is to realize almost the same transmission characteristic in all wavelengths at a transmission rate of 10 Gb/s or more. An optical transmitter 10 outputs WDM signal light multiplexed with signal light of a plurality of wavelengths toward an optical transmission line 12. The optical transmission line 12 comprises an optical transmission fiber 14, an optical repeating amplifier 16 and a dispersion compensating fiber 18. The gain characteristic of the optical repeating amplifier 16 is set so that the gain becomes the maximum at the effective zero dispersion wavelength of the optical transmission line 12 and that lowers inversely proportional to the distance from the effective zero dispersion wavelength. The whole optical transmission line 12 is set so that the peak power deviation between the effective zero dispersion wavelength &lgr;0 and the wavelength &lgr;1 or &lgr;n on both end becomes approximately 4 dB.

    摘要翻译: 本发明的目的是以10Gb / s以上的传输速率实现所有波长的几乎相同的传输特性。 光发送器10将与多个波长的信号光复用的WDM信号光输出到光传输线12.光传输线12包括光传输光纤14,光中继放大器16和色散补偿光纤18.增益 光学重复放大器16的特性被设置为使得增益在光传输线路12的有效零色散波长处变为最大值,并且降低与距有效零色散波长的距离成反比。 整个光传输线路12被设置为使得有效零色散波长λ0和两端的波长λ1或兰博丹之间的峰值功率偏差变为大约4dB。

    Semiconductor device with delay correction function
    7.
    发明授权
    Semiconductor device with delay correction function 失效
    具有延迟校正功能的半导体器件

    公开(公告)号:US06720811B2

    公开(公告)日:2004-04-13

    申请号:US10193251

    申请日:2002-07-12

    IPC分类号: H03L700

    摘要: A semiconductor device includes a delay amount measuring unit, multiple delay sections and a correction signal generating unit. The delay amount measuring unit for measures an actual delay amount corresponding to a specified delay amount by supplying a clock signal with a known period to multiple 1-ns-delay strings with a preassigned delay amount, and by detecting phase variations of the clock signal by the 1-ns-delay strings. The delay sections includes a delay string capable of freely adjusting a connection number of its delay elements. The correction signal generating unit generates a correction signal for enabling each of the delay sections to correct the connection number of the delay strings such that each delay section has a desired delay amount, in accordance with the actual delay amount corresponding to the specified delay amount and measured by the delay measuring unit.

    摘要翻译: 半导体器件包括延迟量测量单元,多个延迟部分和校正信号生成单元。 延迟量测量单元,用于通过向具有预分配的延迟量的多个1-ns延迟串提供具有已知周期的时钟信号,并且通过检测时钟信号的相位变化来检测相应于指定延迟量的实际延迟量, 1 ns延迟字符串。 延迟部分包括能够自由地调节其延迟元件的连接数量的延迟串。 校正信号生成单元根据与规定的延迟量对应的实际延迟量,生成用于使每个延迟部分能够校正延迟串的连接数,使得每个延迟部分具有期望的延迟量的校正信号,以及 由延迟测量单元测量。