公开(公告)号：US20070023763A1

公开(公告)日：2007-02-01

申请号：US11492130

申请日：2006-07-25

申请人： Shinichi Takigawa ,  Daisuke Ueda ,  Susumu Koike

发明人： Shinichi Takigawa ,  Daisuke Ueda ,  Susumu Koike

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/38

摘要： A semiconductor light-emitting device includes a light-emitting layer and a light extraction layer formed on the light-emitting layer and made of a resin material containing particles. The maximum size of each of the particles contained in the light extraction layer is smaller than the wavelength of emitted light penetrating through the light extraction layer.

摘要翻译： 半导体发光器件包括发光层和形成在发光层上并由含有颗粒的树脂材料制成的光提取层。 包含在光提取层中的每个颗粒的最大尺寸小于穿过光提取层的发射光的波长。

公开(公告)号：US07439552B2

公开(公告)日：2008-10-21

申请号：US11492130

申请日：2006-07-25

申请人： Shinichi Takigawa ,  Daisuke Ueda ,  Susumu Koike

发明人： Shinichi Takigawa ,  Daisuke Ueda ,  Susumu Koike

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/38

摘要： A semiconductor light-emitting device includes a light-emitting layer and a light extraction layer formed on the light-emitting layer and made of a resin material containing particles. The maximum size of each of the particles contained in the light extraction layer is smaller than the wavelength of emitted light penetrating through the light extraction layer.

摘要翻译： 半导体发光器件包括发光层和形成在发光层上并由含有颗粒的树脂材料制成的光提取层。 包含在光提取层中的每个颗粒的最大尺寸小于穿过光提取层的发射光的波长。

公开(公告)号：US07595498B2

公开(公告)日：2009-09-29

申请号：US11195812

申请日：2005-08-03

申请人： Shinichi Takigawa ,  Daisuke Ueda

发明人： Shinichi Takigawa ,  Daisuke Ueda

IPC分类号： H01L29/12

CPC分类号： H01J21/04 ,  H01J9/244 ,  H01L31/03048 ,  H01L31/09 ,  Y02E10/544 ,  Y02P70/521

摘要： The present invention provides an electromagnetic wave generation apparatus that is compact and generates a high power terahertz wave. An electromagnetic wave generation apparatus includes: a substrate; a first electrode, having a photoelectron emitting part, formed on one of the surfaces of the substrate; a second electrode formed on the surface of the substrate; a power supply source that applies voltage to between the first electrode and the second electrode so that the potential of the second electrode becomes higher than the potential of the first electrode; and a light source that radiates one of time modulated light and wavelength modulated light, and in the apparatus, the photoelectron emitting part (a) emits electrons when light is irradiated and (b) is placed at a position which an incident light from the light source enters and from which the emitted electrons run to the electron incidence plane of the second electrode.

摘要翻译： 本发明提供一种紧凑型并产生高功率太赫兹波的电磁波产生装置。 电磁波发生装置包括：基板; 具有光电子发射部分的第一电极，形成在所述基板的一个表面上; 形成在所述基板的表面上的第二电极; 电源，其在第一电极和第二电极之间施加电压，使得第二电极的电位变得高于第一电极的电位; 以及辐射时间调制光和波长调制光中的一个的光源，并且在该装置中，光照射部分（a）在照射光时发射电子，并且（b）被放置在来自光的入射光的位置 源极进入并发射出的电子运行到第二电极的电子入射平面。

公开(公告)号：US07170108B2

公开(公告)日：2007-01-30

申请号：US10817800

申请日：2004-04-06

申请人： Daisuke Ueda ,  Shinichi Takigawa

发明人： Daisuke Ueda ,  Shinichi Takigawa

IPC分类号： H01L29/732 ,  H01L31/072

CPC分类号： B82Y20/00 ,  H01L33/145 ,  H01L33/32 ,  H01S5/2214 ,  H01S5/2215 ,  H01S5/34333

摘要： An n-type buffer layer composed of n-type GaN, an n-type cladding layer composed of n-type AlGaN, an n-type optical confinement layer composed of n-type GaN, a single quantum well active layer composed of undoped GaInN, a p-type optical confinement layer composed of p-type GaN, a p-type cladding layer composed of p-type AlGaN, and a p-type contact layer composed of p-type GaN are formed on a substrate composed of sapphire. A current blocking layer formed in an upper portion of the p-type cladding layer and on both sides of the p-type contact layer to define a ridge portion is composed of a dielectric material obtained by replacing some of nitrogen atoms composing a Group III–V nitride semiconductor with oxygen atoms.

摘要翻译： 由n型GaN构成的n型缓冲层，由n型AlGaN构成的n型覆盖层，由n型GaN构成的n型光限制层，由未掺杂的GaInN构成的单量子阱活性层 在由蓝宝石构成的基板上形成由p型GaN构成的p型光限制层，由p型AlGaN构成的p型覆盖层和由p型GaN构成的p型接触层。 形成在p型覆层的上部并且在p型接触层的两侧形成脊部的电流阻挡层由通过将构成III- 具有氧原子的氮化物半导体。

公开(公告)号：US20060028110A1

公开(公告)日：2006-02-09

申请号：US11195812

申请日：2005-08-03

申请人： Shinichi Takigawa ,  Daisuke Ueda

发明人： Shinichi Takigawa ,  Daisuke Ueda

IPC分类号： H01J9/02

CPC分类号： H01J21/04 ,  H01J9/244 ,  H01L31/03048 ,  H01L31/09 ,  Y02E10/544 ,  Y02P70/521

摘要： The present invention provides an electromagnetic wave generation apparatus that is compact and generates a high power terahertz wave. An electromagnetic wave generation apparatus includes: a substrate; a first electrode, having a photoelectron emitting part, formed on one of the surfaces of the substrate; a second electrode formed on the surface of the substrate; a power supply source that applies voltage to between the first electrode and the second electrode so that the potential of the second electrode becomes higher than the potential of the first electrode; and a light source that radiates one of time modulated light and wavelength modulated light, and in the apparatus, the photoelectron emitting part (a) emits electrons when light is irradiated and (b) is placed at a position which an incident light from the light source enters and from which the emitted electrons run to the electron incidence plane of the second electrode.

公开(公告)号：US06746948B2

公开(公告)日：2004-06-08

申请号：US10243711

申请日：2002-09-16

申请人： Daisuke Ueda ,  Shinichi Takigawa

发明人： Daisuke Ueda ,  Shinichi Takigawa

IPC分类号： H01L2128

CPC分类号： B82Y20/00 ,  H01L33/145 ,  H01L33/32 ,  H01S5/2214 ,  H01S5/2215 ,  H01S5/34333

摘要： An n-type buffer layer composed of n-type GaN, an n-type cladding layer composed of n-type AlGaN, an n-type optical confinement layer composed of n-type GaN, a single quantum well active layer composed of undoped GaInN, a p-type optical confinement layer composed of p-type GaN, a p-type cladding layer composed of p-type AlGaN, and a p-type contact layer composed of p-type GaN are formed on a substrate composed of sapphire. A current blocking layer formed in an upper portion of the p-type cladding layer and on both sides of the p-type contact layer to define a ridge portion is composed of a dielectric material obtained by replacing some of nitrogen atoms composing a Group III-V nitride semiconductor with oxygen atoms.

摘要翻译： 由n型GaN构成的n型缓冲层，由n型AlGaN构成的n型覆盖层，由n型GaN构成的n型光限制层，由未掺杂的GaInN构成的单量子阱活性层 在由蓝宝石构成的基板上形成由p型GaN构成的p型光限制层，由p型AlGaN构成的p型覆盖层和由p型GaN构成的p型接触层。 形成在p型覆层的上部并且在p型接触层的两侧形成脊部的电流阻挡层由通过将构成III- 具有氧原子的氮化物半导体。

公开(公告)号：US08582277B2

公开(公告)日：2013-11-12

申请号：US13300952

申请日：2011-11-21

申请人： Hirobumi Tanaka ,  Makoto Endo ,  Satoko Ueda ,  Daisuke Ueda ,  Shogo Murosawa ,  Daisuke Yoshida ,  Kenta Ono ,  Minoru Ogasawara ,  Tatsuya Kikuchi

发明人： Hirobumi Tanaka ,  Makoto Endo ,  Satoko Ueda ,  Daisuke Ueda ,  Shogo Murosawa ,  Daisuke Yoshida ,  Kenta Ono ,  Minoru Ogasawara ,  Tatsuya Kikuchi

IPC分类号： H01G4/12 ,  C04B35/468

CPC分类号： H01G4/1227 ,  H01G4/1281 ,  H01G4/30

摘要： A multilayer ceramic electronic component comprising an element body in which a dielectric layer and an internal electrode layer are stacked. The dielectric layer is constituted from a dielectric ceramic composition including; a compound having a perovskite structure expressed by a formula of ABO3 (A is at least one selected from Ba, Ca, and Sr; B is at least one selected from Ti, Zr, and Hf); an oxide of Mg; an oxide of rare earth elements including Sc and Y; and an oxide including Si. The dielectric ceramic composition comprises a plurality of dielectric particles and a grain boundary present in between the dielectric particles. In the grain boundary, when content ratios of Mg and Si are set to D(Mg) and D(Si) respectively, D(Mg) is 0.2 to 1.8 wt % in terms of MgO, and D(Si) is 0.4 to 8.0 wt % in terms of SiO2.

摘要翻译： 一种多层陶瓷电子部件，其特征在于，具有层叠有电介质层和内部电极层的元件体。 电介质层由介电陶瓷组合物构成，包括： 具有由式ABO 3表示的钙钛矿结构的化合物（A是选自Ba，Ca和Sr中的至少一种; B是选自Ti，Zr和Hf中的至少一种）; Mg的氧化物; 包括Sc和Y的稀土元素的氧化物; 和包含Si的氧化物。 电介质陶瓷组合物包含存在于电介质颗粒之间的多个电介质颗粒和晶界。 在晶界中，当Mg和Si的含量比分别设定为D（Mg）和D（Si）时，D（Mg）以MgO计为0.2〜1.8重量％，D（Si）为0.4〜8.0 重量％。

公开(公告)号：US08307772B2

公开(公告)日：2012-11-13

申请号：US12656236

申请日：2010-01-21

申请人： Akifume Nakashima ,  Daisuke Ueda

发明人： Akifume Nakashima ,  Daisuke Ueda

IPC分类号： D05B23/00

CPC分类号： D05C7/00 ,  D05B29/06 ,  D05D2303/00

摘要： A sewing machine including a presser foot that presses a workpiece, a presser bar that has a lower end allowing detachable attachment of the presser foot; a presser bar vertically moving mechanism that moves the presser bar up and down; a presser bar driver that drives the presser bar vertically moving mechanism; a needle plate that has an upper surface for placing the workpiece; a projecting element that is detachably attached to the presser bar and that is driven up and down with the presser bar as the presser bar is driven up and down by the presser bar driver through the presser bar vertically moving mechanism to form embosses on the workpiece by downwardly pressing the workpiece; and a receiving section that is provided on the upper surface of the needle plate that opposes the projecting element to receive a tip of the projecting element.

摘要翻译： 一种缝纫机，包括按压工件的压脚，具有下端的压脚，允许压脚可拆卸地附接; 按压杆上下移动机构; 一个驱动压杆垂直移动机构的压脚驱动器; 具有用于放置所述工件的上表面的针板; 突出元件，其可拆卸地附接到压脚杆，并且当压杆作为压杆时上下驱动，压杆驱动器通过压杆垂直移动机构被上下驱动，以在工件上形成压花，以通过 向下按压工件; 以及接收部，其设置在与所述突出元件相对的所述针板的上表面上，以容纳所述突出元件的前端。

公开(公告)号：US08203376B2

公开(公告)日：2012-06-19

申请号：US12445390

申请日：2007-11-20

申请人： Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Hiroaki Ueno ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Hiroaki Ueno ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H03K17/687

CPC分类号： H01L29/7787 ,  H01L27/0605 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/432 ,  H01L29/739 ,  H01L29/8124

摘要： A semiconductor device includes a semiconductor layer stack 13 formed on a substrate 11 and having a channel region, a first electrode 16A and a second electrode 16B formed spaced apart from each other on the semiconductor layer stack 13, a first gate electrode 18A formed between the first electrode 16A and the second electrode 16B, and a second gate electrode 18B formed between the first gate electrode 18A and the second electrode 16B. A first control layer 19A having a p-type conductivity is formed between the semiconductor layer stack 13 and the first gate electrode 18A.

摘要翻译： 半导体器件包括形成在衬底11上并具有沟道区的半导体层堆叠13，在半导体层叠层13上彼此隔开形成的第一电极16A和第二电极16B，形成在第一栅电极18A之间的第一栅电极18A 第一电极16A和第二电极16B，以及形成在第一栅电极18A和第二电极16B之间的第二栅电极18B。 在半导体层堆叠13和第一栅电极18A之间形成具有p型导电性的第一控制层19A。

公开(公告)号：US08134191B2

公开(公告)日：2012-03-13

申请号：US12160291

申请日：2006-07-11

申请人： Takumi Yamaguchi ,  Yuuichi Inaba ,  Daisuke Ueda ,  Yoshiyuki Matsunaga

发明人： Takumi Yamaguchi ,  Yuuichi Inaba ,  Daisuke Ueda ,  Yoshiyuki Matsunaga

IPC分类号： H01L31/09

CPC分类号： H04N9/045 ,  H04N5/33 ,  H04N5/332

摘要： A solid-state imaging apparatus that performs color imaging using visible light and imaging using infrared light, the solid-state imaging apparatus including a plurality of two-dimensionally arranged pixel cells, in each of which a filter mainly transmits one of visible light and infrared light, wherein filters are arranged such that a first unit of arrangement where a plurality of filters that mainly transmit visible light are arranged and a second unit of arrangement where a filter that mainly transmits visible light and a filter that mainly transmits infrared light are arranged are alternately arranged in both a row direction and a column direction. Also, in the first unit of arrangement are arranged filters including three kinds of filters each transmitting one of red light, green light and blue light and in the second unit of arrangement are arranged four kinds of filters each transmitting one of red light, green light, blue light and infrared light.

摘要翻译： 一种使用可见光进行彩色成像并使用红外光成像的固态成像装置，所述固态成像装置包括多个二维排列的像素单元，每个像素单元中的每一个主要透过可见光和红外线之一 光，其中滤光器被布置成使得布置有主要透射可见光的多个滤光器的第一布置单元和布置有主要透射可见光的滤光器的第二单元和布置有主要透射红外光的滤光器的布置的第二单元是布置的， 交替地排列在行方向和列方向上。 此外，在第一单元中布置有包括发射红光，绿光和蓝光中的一种的三种滤光器的滤色器，并且在第二种布置中布置了四种滤色片，每种滤色片透过红光，绿光 ，蓝光和红外灯。