公开(公告)号：US08582277B2

公开(公告)日：2013-11-12

申请号：US13300952

申请日：2011-11-21

申请人： Hirobumi Tanaka ,  Makoto Endo ,  Satoko Ueda ,  Daisuke Ueda ,  Shogo Murosawa ,  Daisuke Yoshida ,  Kenta Ono ,  Minoru Ogasawara ,  Tatsuya Kikuchi

发明人： Hirobumi Tanaka ,  Makoto Endo ,  Satoko Ueda ,  Daisuke Ueda ,  Shogo Murosawa ,  Daisuke Yoshida ,  Kenta Ono ,  Minoru Ogasawara ,  Tatsuya Kikuchi

IPC分类号： H01G4/12 ,  C04B35/468

CPC分类号： H01G4/1227 ,  H01G4/1281 ,  H01G4/30

摘要： A multilayer ceramic electronic component comprising an element body in which a dielectric layer and an internal electrode layer are stacked. The dielectric layer is constituted from a dielectric ceramic composition including; a compound having a perovskite structure expressed by a formula of ABO3 (A is at least one selected from Ba, Ca, and Sr; B is at least one selected from Ti, Zr, and Hf); an oxide of Mg; an oxide of rare earth elements including Sc and Y; and an oxide including Si. The dielectric ceramic composition comprises a plurality of dielectric particles and a grain boundary present in between the dielectric particles. In the grain boundary, when content ratios of Mg and Si are set to D(Mg) and D(Si) respectively, D(Mg) is 0.2 to 1.8 wt % in terms of MgO, and D(Si) is 0.4 to 8.0 wt % in terms of SiO2.

摘要翻译： 一种多层陶瓷电子部件，其特征在于，具有层叠有电介质层和内部电极层的元件体。 电介质层由介电陶瓷组合物构成，包括： 具有由式ABO 3表示的钙钛矿结构的化合物（A是选自Ba，Ca和Sr中的至少一种; B是选自Ti，Zr和Hf中的至少一种）; Mg的氧化物; 包括Sc和Y的稀土元素的氧化物; 和包含Si的氧化物。 电介质陶瓷组合物包含存在于电介质颗粒之间的多个电介质颗粒和晶界。 在晶界中，当Mg和Si的含量比分别设定为D（Mg）和D（Si）时，D（Mg）以MgO计为0.2〜1.8重量％，D（Si）为0.4〜8.0 重量％。

公开(公告)号：US08697546B2

公开(公告)日：2014-04-15

申请号：US13461616

申请日：2012-05-01

申请人： Kenta Ono

发明人： Kenta Ono

IPC分类号： H01L21/30

CPC分类号： H01L21/304 ,  H01L21/30625 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/11002 ,  H01L2224/11009 ,  H01L2224/11462 ,  H01L2224/11622 ,  H01L2224/11849 ,  H01L2224/13009 ,  H01L2224/13021 ,  H01L2224/13023 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14156 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14335 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/1438 ,  H01L2924/15311 ,  H01L2924/01047 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method of manufacturing a semiconductor device, comprising bonding a first principal surface of a substrate to a supporting substrate through a light-to-heat conversion film, and removing a portion of the light-to-heat conversion film exposed on the supporting substrate. A method of manufacturing a semiconductor device, comprising forming a light-to-heat conversion film on a supporting substrate, bonding a semiconductor substrate to the supporting substrate, so that the light-to-heat conversion film extends outside the semiconductor substrate, performing an anti-contamination treatment on the light-to-heat conversion film, and separating the supporting substrate and the semiconductor substrate from each other.

摘要翻译： 一种制造半导体器件的方法，包括通过光 - 热转换膜将衬底的第一主表面粘合到支撑衬底，以及去除在支撑衬底上暴露的光 - 热转换膜的一部分。 一种制造半导体器件的方法，包括在支撑衬底上形成光 - 热转换膜，将半导体衬底接合到支撑衬底，使得光 - 热转换膜延伸到半导体衬底外部，执行 对光热转换膜进行防污处理，并将支撑基板和半导体基板彼此分离。