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    COIL MATERIAL AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明申请
    COIL MATERIAL AND METHOD FOR MANUFACTURING THE SAME 有权
    线圈材料及其制造方法

    公开(公告)号：US20120128997A1

    公开(公告)日：2012-05-24

    申请号：US13387965

    申请日：2011-03-22

    申请人： Masatada Numano ,  Michimasa Miyanaga ,  Takeshi Uchihara ,  Yukihiro Oishi ,  Nozomu Kawabe

    发明人： Masatada Numano ,  Michimasa Miyanaga ,  Takeshi Uchihara ,  Yukihiro Oishi ,  Nozomu Kawabe

    IPC分类号： C22F1/06 ,  C22C23/02 ,  B22D11/00 ,  B21B3/00

    CPC分类号： C22F1/00 ,  B21B3/003 ,  B21C47/04 ,  B21C47/26 ,  B21C47/326 ,  B22D11/001 ,  B22D11/124 ,  B22D11/22 ,  B22D41/50 ,  C21D8/021 ,  C21D9/68 ,  C22C23/00 ,  C22F1/06 ,  Y10T428/12292

    摘要： A coil material capable of contributing to an improvement of the productivity of a high-strength magnesium alloy sheet and a method for manufacturing the coil material are provided. Regarding the method for manufacturing a coil material through coiling of a sheet material formed from a metal into the shape of a cylinder, so as to produce the coil material, the sheet material is a cast material of a magnesium alloy discharged from a continuous casting machine and the thickness t (mm) thereof is 7 mm or less. The sheet material 1 is coiled with a coiler while the temperature T (° C.) of the sheet material 1 just before coiling is controlled to be a temperature at which the surface strain ((t/R)×100) represented by the thickness t and the bending radius R (mm) of the sheet material 1 becomes less than or equal to the elongation at room temperature of the sheet material 1.

    摘要翻译： 提供能够提高高强度镁合金板的生产率的线圈材料和制造线圈材料的方法。 关于通过将由金属形成的片状材料卷绕成圆筒状而制造线圈材料的方法，以制造线圈材料，片材是从连续铸造机器排出的镁合金的铸造材料 其厚度t（mm）为7mm以下。 片材1用卷取机卷绕，而刚好卷取前的片材1的温度T（℃）被控制为由厚度（（t / R）×100）表示的表面应变（（t / R）×100） t和片材1的弯曲半径R（mm）变得小于或等于片材1在室温下的伸长率。

    Nitride Semiconductor Crystal Manufacturing Apparatus, Nitride Semiconductor Crystal Manufacturing Method, and Nitride Semiconductor Crystal
    9.
    发明申请
    Nitride Semiconductor Crystal Manufacturing Apparatus, Nitride Semiconductor Crystal Manufacturing Method, and Nitride Semiconductor Crystal 失效
    氮化物半导体晶体制造装置，氮化物半导体晶体制造方法和氮化物半导体晶体

    公开(公告)号：US20110171462A1

    公开(公告)日：2011-07-14

    申请号：US13060276

    申请日：2010-01-20

    申请人： Issei Satoh ,  Michimasa Miyanaga ,  Yoshiyuki Yamamoto ,  Hideaki Nakahata

    发明人： Issei Satoh ,  Michimasa Miyanaga ,  Yoshiyuki Yamamoto ,  Hideaki Nakahata

    IPC分类号： C01B21/072 ,  C23C16/448 ,  C23C16/34 ,  C30B23/00 ,  B32B5/00

    CPC分类号： C30B23/066 ,  C30B29/403

    摘要： Affords nitride semiconductor crystal manufacturing apparatuses that are durable and that are for manufacturing nitride semiconductor crystal in which the immixing of impurities from outside the crucible is kept under control, and makes methods for manufacturing such nitride semiconductor crystal, and the nitride semiconductor crystal itself, available.A nitride semiconductor crystal manufacturing apparatus (100) is furnished with a crucible (101), a heating unit (125), and a covering component (110). The crucible (101) is where, interiorly, source material (17) is disposed. The heating unit (125) is disposed about the outer periphery of the crucible (101), where it heats the crucible (101) interior. The covering component (110) is arranged in between the crucible (101) and the heating unit (125). The covering component (110) includes a first layer (111) formed along the side opposing the crucible (101), and made of a metal whose melting point is higher than that of the source material (17), and a second layer (112) formed along the outer periphery of the first layer (111), and made of a carbide of the metal that constitutes the first layer (111).

    摘要翻译： 使氮化物半导体晶体制造装置耐久，并且用于制造氮化物半导体晶体，其中坩埚外部杂质的固定被控制，并且制造这种氮化物半导体晶体的方法和氮化物半导体晶体本身可用 。 氮化物半导体晶体制造装置（100）具有坩埚（101），加热单元（125）和覆盖部件（110）。 坩埚（101）内部设置有源材料（17）。 加热单元（125）围绕坩埚（101）的外周设置，其中坩埚（101）内部加热。 覆盖部件（110）布置在坩埚（101）和加热单元（125）之间。 覆盖部件（110）包括沿与坩埚（101）相对的一侧形成的由熔点高于源材料（17）的金属制成的第一层（111）和第二层（112） ）沿着第一层（111）的外周形成，并且由构成第一层（111）的金属的碳化物构成。

    Method for Growing Aluminum Nitride Crystal, Process for Producing Aluminum Nitride Crystal, and Aluminum Nitride Crystal
    10.
    发明申请
    Method for Growing Aluminum Nitride Crystal, Process for Producing Aluminum Nitride Crystal, and Aluminum Nitride Crystal 有权
    生产氮化铝晶体的方法，生产氮化铝晶体的方法和氮化铝晶体

    公开(公告)号：US20100143748A1

    公开(公告)日：2010-06-10

    申请号：US12595957

    申请日：2008-12-19

    申请人： Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

    发明人： Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

    IPC分类号： B32B9/04 ,  C30B23/06

    CPC分类号： C30B29/403 ,  C30B25/02 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658

    摘要： Methods of growing and manufacturing aluminum nitride crystal, and aluminum nitride crystal produced by the methods. Preventing sublimation of the starting substrate allows aluminum nitride crystal of excellent crystallinity to be grown at improved growth rates. The aluminum nitride crystal growth method includes the following steps. Initially, a laminar baseplate is prepared, furnished with a starting substrate having a major surface and a back side, a first layer formed on the back side, and a second layer formed on the first layer. Aluminum nitride crystal is then grown onto the major surface of the starting substrate by vapor deposition. The first layer is made of a substance that at the temperatures at which the aluminum nitride crystal is grown is less liable to sublimate than the starting substrate. The second layer is made of a substance whose thermal conductivity is higher than that of the first layer.

    摘要翻译： 生产和制造氮化铝晶体的方法和通过这些方法生产的氮化铝晶体。 防止起始衬底的升华允许以提高的生长速率生长具有优异结晶度的氮化铝晶体。 氮化铝晶体生长方法包括以下步骤。 首先，制备层状基板，配备有具有主表面和背面的起始衬底，在背面形成的第一层和形成在第一层上的第二层。 然后通过气相沉积将氮化铝晶体生长到起始衬底的主表面上。 第一层由在生长氮化铝晶体的温度下比起始衬底更不易升华的物质制成。 第二层由导热率高于第一层的物质制成。