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    Strength Evaluation Method of Die Casting Product and Die Casting Product
    3.
    发明申请
    Strength Evaluation Method of Die Casting Product and Die Casting Product 审中-公开
    压铸产品和压铸产品的强度评估方法

    公开(公告)号：US20150044090A1

    公开(公告)日：2015-02-12

    申请号：US14381917

    申请日：2012-07-24

    申请人： Munetaka Mitsumura ,  Shigeru Okita ,  Hiroyuki Uchida

    发明人： Munetaka Mitsumura ,  Shigeru Okita ,  Hiroyuki Uchida

    IPC分类号： G01N3/22 ,  E05B15/16 ,  B60R25/021 ,  B22D17/00

    CPC分类号： G01N3/22 ,  B22C9/24 ,  B22C19/04 ,  B22D17/00 ,  B60R25/02115 ,  E05B15/1614 ,  G01N29/11 ,  G01N2203/0067 ,  G01N2291/0234 ,  G01N2291/02827 ,  G01N2291/044

    摘要： There are provided a strength evaluation method of a die casting product capable of appropriately evaluating the strength of the die casting product, and a die casting product in which the strength is evaluated by the strength evaluation method. A breakage test is performed by a simple strength tester after casting, and then, a strength reduction ratio is estimated based on an area ratio of cold flakes in a broken surface obtained by broken surface observation. Alternatively, ultrasonic flaw detection is performed for an internal defect in a predetermined range of a high stress portion of the die casting product, calculated by stress analysis in advance, and the die casting product is evaluated to have a predetermined strength when a defect ratio obtained by dividing a total area of the internal defect in the predetermined range by a total defect detection area is less than or equal to a predetermined value.

    摘要翻译： 提供了能够适当地评价压铸产品的强度的压铸产品的强度评价方法和通过强度评价方法评价强度的压铸产品。 在铸造后，通过简单的强度试验机进行断裂试验，然后基于通过破碎的表面观察获得的破裂面中的冷片的面积比来估计强度降低率。 或者，对于预先通过应力分析计算出的压铸产品的高应力部分的预定范围内的内部缺陷进行超声波探伤，并且当获得的缺陷率获得时，将压铸产品评价为具有预定强度 通过将预定范围内的内部缺陷的总面积除以总缺陷检测区域小于或等于预定值。

    Perpendicular magnetization storage element and storage device
    5.
    发明授权
    Perpendicular magnetization storage element and storage device 有权
    垂直磁化存储元件和存储装置

    公开(公告)号：US08854876B2

    公开(公告)日：2014-10-07

    申请号：US13462538

    申请日：2012-05-02

    申请人： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Kazutaka Yamane

    发明人： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Kazutaka Yamane

    IPC分类号： G11C11/14 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16

    CPC分类号： H01L43/10 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/226 ,  H01L43/08

    摘要： A storage element includes a storage layer which has magnetization perpendicular to its film surface and which retains information by a magnetization state of a magnetic substance, a magnetization pinned layer having magnetization perpendicular to its film surface which is used as the basis of the information stored in the storage layer, an interlayer of a non-magnetic substance provided between the storage layer and the magnetization pinned layer, and a cap layer which is provided adjacent to the storage layer at a side opposite to the interlayer and which includes at least two oxide layers. The storage element is configured to store information by reversing the magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure including the storage layer, the interlayer, and the magnetization pinned layer.

    摘要翻译： 存储元件包括具有垂直于其膜表面的磁化并且通过磁性物质的磁化状态保持信息的存储层，具有垂直于其膜表面的磁化的磁化固定层，其被用作存储在其中的信息的基础 所述存储层，设置在所述存储层和所述磁化被钉扎层之间的非磁性物质的中间层，以及在与所述中间层相对的一侧设置在所述存储层附近并且包括至少两个氧化物层的盖层 。 存储元件被配置为通过使用由包括存储层，中间层和磁化固定层的层结构的层叠方向通过的电流产生的自旋转矩磁化反转来反转存储层的磁化来存储信息。

    Memory element and memory
    6.
    发明授权
    Memory element and memory 有权
    内存元素和内存

    公开(公告)号：US08853806B2

    公开(公告)日：2014-10-07

    申请号：US13221261

    申请日：2011-08-30

    申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

    发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC分类号： H01L29/82

    CPC分类号： H01L43/10 ,  H01L43/08

    摘要： There is provided a memory element including a magnetic layer that includes at least one kind of element selected from a group consisting of Fe, Co, and Ni, and carbon, has a content of carbon that is equal to or greater than 3 atomic % and less than 70 atomic % with respect to a total content of Fe, Co, and Ni, and has magnetic anisotropy in a direction perpendicular to a film face; and an oxide layer that is formed of an oxide having a sodium chloride structure or a spinel structure and that comes into contact with the magnetic layer.

    摘要翻译： 提供了包括磁性层的记忆元件，该磁性层包括从由Fe，Co和Ni组成的组中选择的至少一种元素，碳具有等于或大于3原子％的碳含量，以及 相对于Fe，Co和Ni的总含量小于70原子％，并且在垂直于膜面的方向上具有磁各向异性; 以及由具有氯化钠结构或尖晶石结构并与磁性层接触的氧化物形成的氧化物层。

    Magnetic memory device and method of manufacturing the same
    8.
    发明授权
    Magnetic memory device and method of manufacturing the same 失效
    磁记忆体装置及其制造方法

    公开(公告)号：US08497139B2

    公开(公告)日：2013-07-30

    申请号：US13192995

    申请日：2011-07-28

    申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

    发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC分类号： H01L29/82 ,  G11C11/02

    CPC分类号： H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L29/66007 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

    摘要： A magnetic memory device including a memory layer having a vertical magnetization on the layer surface, of which the direction of magnetization is changed according to information; and a reference layer provided against the memory layer, and being a basis of information while having a vertical magnetization on the layer surface, wherein the memory device memorizes the information by reversing the magnetization of the memory layer by a spin torque generated when a current flows between layers made from the memory layer, the nonmagnetization layer and the reference layer, and a coercive force of the memory layer at a memorization temperature is 0.7 times or less than a coercive force at room temperature, and a heat conductivity of a center portion of an electrode formed on one side of the memory layer in the direction of the layer surface is lower than a heat conductivity of surroundings thereof.

    摘要翻译： 一种磁存储器件，包括在层表面上具有垂直磁化的存储层，其磁化方向根据信息而改变; 以及对存储层提供的参考层，并且是在层表面上具有垂直磁化的信息的基础，其中存储器件通过在电流流动时产生的自旋转矩反转存储层的磁化来存储信息 在由记忆层，非磁化层和参考层制成的层之间，存储层在记忆温度下的矫顽力为室温下的矫顽力的0.7倍以下，导热系数为 在层表面方向上形成在存储层的一侧的电极低于其周围的导热率。

    Memory element and memory device
    9.
    发明授权
    Memory element and memory device 有权
    存储器元件和存储器件

    公开(公告)号：US08455967B2

    公开(公告)日：2013-06-04

    申请号：US13216474

    申请日：2011-08-24

    申请人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

    发明人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC分类号： H01L29/82 ,  H01L43/00 ,  G11C11/00

    CPC分类号： G11C11/16 ,  G11C11/161

    摘要： There is disclosed a memory element including a layered structure including a memory layer that has magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and the memory layer and the magnetization-fixed layer have a film thickness in such a manner that an interface magnetic anisotropy energy becomes larger than a diamagnetic energy.

    摘要翻译： 公开了一种存储元件，其包括层叠结构，该分层结构包括具有垂直于膜面的磁化和其信息方向变化的磁化方向的存储层; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层之间的绝缘层。 自旋极化的电子沿分层结构的层叠方向注入，由此存储层的磁化方向变化，并且相对于存储层执行信息的记录，有效的抗磁场的大小 存储层接收小于存储层的饱和磁化量，并且存储层和磁化固定层具有使界面磁各向异性能量变得大于反磁能的方式的膜厚度。

    STORAGE ELEMENT AND STORAGE DEVICE
    10.
    发明申请
    STORAGE ELEMENT AND STORAGE DEVICE 有权
    存储元件和存储设备

    公开(公告)号：US20120287696A1

    公开(公告)日：2012-11-15

    申请号：US13451043

    申请日：2012-04-19

    申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida ,  Tetsuya Asayama

    发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida ,  Tetsuya Asayama

    IPC分类号： G11C5/08

    CPC分类号： H01F10/3286 ,  B82Y40/00 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/329 ,  H01F41/303 ,  H01F41/325 ,  H01L27/226 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    摘要： A storage element includes a storage layer having a magnetization perpendicular to a layer surface and storing information according to a magnetization state of a magnetic material; a fixed magnetization layer having the magnetization as a reference of the information of the storage layer and perpendicular to the layer surface; an interlayer formed of a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer; a coercive force enhancement layer adjacent to the storage layer, opposite to the interlayer, and formed of Cr, Ru, W, Si, or Mn; and a spin barrier layer formed of an oxide, adjacent to the coercive force enhancement layer, and opposite to the storage layer. The storage layer magnetization is reversed using spin torque magnetization reversal caused by a current in a lamination direction of a layer structure including the storage layer, the interlayer, and the fixed magnetization layer, thereby storing information

    摘要翻译： 存储元件包括具有垂直于层表面的磁化的存储层，并且根据磁性材料的磁化状态存储信息; 具有作为存储层的信息并垂直于层表面的参考的磁化的固定磁化层; 由非磁性材料形成并夹在所述存储层和所述固定磁化层之间的夹层; 与所述中间层相对的与所述存储层相邻的矫顽力增强层，由Cr，Ru，W，Si或Mn形成; 以及由与矫顽力增强层相邻并与存储层相对的氧化物形成的自旋势垒层。 使用由包括存储层，中间层和固定磁化层的层结构的层叠方向上的电流引起的自旋转矩磁化反转使存储层磁化反转，由此存储信息