MOUNTING TABLE AND PLASMA PROCESSING APPARATUS
    1.
    发明申请
    MOUNTING TABLE AND PLASMA PROCESSING APPARATUS 有权
    安装台和等离子体加工设备

    公开(公告)号:US20100071850A1

    公开(公告)日:2010-03-25

    申请号:US12560924

    申请日:2009-09-16

    IPC分类号: H01L21/465

    CPC分类号: H01L21/6833 H01J37/32091

    摘要: A mounting table for use in a plasma processing apparatus, on which a substrate is mounted, includes: a conductive member connected to a high frequency power supply and a high frequency power supply; a dielectric layer embedded in a central portion on an upper surface of the conductive member; and an electrostatic chuck mounted on the dielectric layer. Further, the electrostatic chuck is connected to a high voltage DC power supply and includes an electrode film satisfying following conditions: δ/z≧85 (where δ=(ρv/(μπf))1/2) and, a surface resistivity of the substrate>a surface resistivity of a central portion of the electrode film.

    摘要翻译: 一种用于安装有基板的等离子体处理装置的安装台,包括:连接到高频电源和高频电源的导电构件; 介电层,其嵌入在所述导电部件的上表面的中央部; 以及安装在电介质层上的静电卡盘。 此外,静电卡盘连接到高压直流电源,并且包括满足以下条件的电极膜:δ/z≥85(其中δ=(&rgr; v /(μ&pgr; f))1/2),并且 基板的表面电阻率>电极膜的中心部分的表面电阻率。

    MOUNTING STAGE AND PLASMA PROCESSING APPARATUS
    2.
    发明申请
    MOUNTING STAGE AND PLASMA PROCESSING APPARATUS 审中-公开
    安装阶段和等离子体加工设备

    公开(公告)号:US20090199967A1

    公开(公告)日:2009-08-13

    申请号:US12365385

    申请日:2009-02-04

    IPC分类号: C23F1/08

    摘要: A mounting stage for a plasma processing apparatus that can prevent degradation of an insulating film in a semiconductor device on a substrate. A conductor member is connected to a radio-frequency power source for producing plasma. A dielectric layer is buried in a central portion of an upper surface of the conductor member. An electrostatic chuck is mounted on the dielectric layer. The electrostatic chuck has an electrode film that satisfies the following condition: δ/z≧85 where δ=(ρv/(μπf))1/2 where z is the thickness of the electrode film, δ is the skin depth of the electrode film with respect to radio-frequency electrical power supplied from the radio-frequency power source, f is the frequency of the radio-frequency electrical power, π is the ratio of a circumference of a circle to its diameter, μ is the magnetic permeability of the electrode film, and ρv is the specific resistance of the electrode film.

    摘要翻译: 一种等离子体处理装置的安装平台,其能够防止基板上的半导体装置中的绝缘膜的劣化。 导体构件连接到用于产生等离子体的射频电源。 电介质层埋在导体部件的上表面的中心部分。 静电卡盘安装在电介质层上。 静电吸盘具有满足以下条件的电极膜:<?in-line-formula description =“In-line formula”end =“lead”?> delta / z> = 85 <?in-line-formula description = “直线公式”end =“tail”?>其中delta =(rhov /(mupif))1/2其中z是电极膜的厚度,delta是电极膜相对于放射线的厚度, f是射频电力的频率,pi是圆周长与其直径的比率,μ是电极膜的导磁率,rhov 是电极膜的电阻率。

    Mounting table and plasma processing apparatus
    3.
    发明授权
    Mounting table and plasma processing apparatus 有权
    安装台和等离子体处理装置

    公开(公告)号:US08512511B2

    公开(公告)日:2013-08-20

    申请号:US12560924

    申请日:2009-09-16

    CPC分类号: H01L21/6833 H01J37/32091

    摘要: A mounting table for use in a plasma processing apparatus, on which a substrate is mounted, includes: a conductive member connected to a high frequency power supply and a high frequency power supply; a dielectric layer embedded in a central portion on an upper surface of the conductive member; and an electrostatic chuck mounted on the dielectric layer. Further, the electrostatic chuck is connected to a high voltage DC power supply and includes an electrode film satisfying following conditions: δ/z≧85 (where δ=(ρv/(μπf))1/2) and, a surface resistivity of the substrate>a surface resistivity of a central portion of the electrode film.

    摘要翻译: 一种用于安装有基板的等离子体处理装置的安装台,包括:连接到高频电源和高频电源的导电构件; 介电层,其嵌入在所述导电部件的上表面的中央部; 以及安装在电介质层上的静电卡盘。 此外,静电卡盘连接到高压直流电源,并且包括满足以下条件的电极膜:δ/ z> = 85(其中δ=(rhov /(mupif))1/2),并且表面电阻率 衬底>电极膜的中心部分的表面电阻率。

    Temperature control system and temperature control method for substrate mounting table
    5.
    发明授权
    Temperature control system and temperature control method for substrate mounting table 有权
    温度控制系统和基板安装台的温度控制方法

    公开(公告)号:US08950469B2

    公开(公告)日:2015-02-10

    申请号:US12902225

    申请日:2010-10-12

    CPC分类号: H01L21/67248 H01L21/67109

    摘要: A temperature control system includes a heat transfer medium supply configured to supply a first heat transfer medium of a first temperature into a heat transfer medium path; at least one heat transfer medium storage provided between the heat transfer medium path and the heat transfer medium supply and configured to store a second heat transfer medium of a second temperature higher than the first temperature; a heat transfer medium supply control device provided between the heat transfer medium supply and the heat transfer medium path and between the heat transfer medium storage and the heat transfer medium path and configured to stop a supply of the first heat transfer medium into the heat transfer medium path from the heat transfer medium supply and to supply the second heat transfer medium into the heat transfer medium path from the heat transfer medium storage when a heating unit generates heat.

    摘要翻译: 温度控制系统包括:传热介质供给,其构造成将第一温度的第一传热介质供给到传热介质路径中; 设置在传热介质路径和传热介质之间的至少一个传热介质存储器供应并构造成存储第二温度高于第一温度的第二传热介质; 传热介质供给控制装置,设置在所述传热介质供给与所述传热介质路径之间,以及所述传热介质储存部和所述传热介质路径之间,并且被配置为停止向所述传热介质供给所述第一传热介质 并且当加热单元产生热量时,从传热介质储存器将第二传热介质供应到传热介质路径中。

    TEMPERATURE CONTROL METHOD AND TEMPERATURE CONTROL SYSTEM FOR SUBSTRATE MOUNTING TABLE
    7.
    发明申请
    TEMPERATURE CONTROL METHOD AND TEMPERATURE CONTROL SYSTEM FOR SUBSTRATE MOUNTING TABLE 审中-公开
    基板安装表温度控制方法及温度控制系统

    公开(公告)号:US20110079367A1

    公开(公告)日:2011-04-07

    申请号:US12894598

    申请日:2010-09-30

    申请人: Yasuharu Sasaki

    发明人: Yasuharu Sasaki

    IPC分类号: F25B29/00

    CPC分类号: H01L21/67109

    摘要: There is provided a temperature control method for a substrate mounting table capable of increasing a temperature of a substrate rapidly and reducing a loss of thermal energy. In a susceptor 12 including therein a heater 14, a coolant path 15 and a coolant reservoir 16 and holding thereon a wafer W on which a plasma etching process is performed, a coolant flows through the inside of the coolant path 15 and the coolant reservoir 16, and a flow of the coolant is stopped in the coolant reservoir 16 when the heater 14 generates heat.

    摘要翻译: 提供了能够快速提高基板的温度并减少热能损失的基板安装台的温度控制方法。 在其中包括加热器14,冷却剂通道15和冷却剂储存器16并且保持在其上执行等离子体蚀刻工艺的晶片W的基座12中,冷却剂流过冷却剂通道15和冷却剂储存器16的内部 并且当加热器14产生热量时,冷却剂的流动停止在冷却剂储存器16中。

    SURFACE TREATMENT METHOD
    8.
    发明申请
    SURFACE TREATMENT METHOD 有权
    表面处理方法

    公开(公告)号:US20080280536A1

    公开(公告)日:2008-11-13

    申请号:US11687879

    申请日:2007-03-19

    IPC分类号: B24B1/00

    CPC分类号: B24B1/00 B24B21/04

    摘要: A surface treatment method that enables a surface of an electrostatic chuck to be smoothed, so as to improve the efficiency of heat transfer between the surface of the electrostatic chuck and a substrate. The electrostatic chuck is provided in an upper portion of a susceptor provided in a chamber of a substrate processing apparatus. In the surface treatment of the electrostatic chuck, a sprayed coating film is formed on the surface of the electrostatic chuck, next the surface of the electrostatic chuck is ground by bringing into contact therewith a grindstone, then the surface of the electrostatic chuck is ground flat by bringing into contact therewith a lapping plate onto a surface of which is sprayed a suspension, and then the surface of the electrostatic chuck is ground smooth by bringing into contact therewith a tape of a tape lapping apparatus.

    摘要翻译: 能够平滑静电卡盘的表面的表面处理方法,以提高静电卡盘的表面与基板之间的热传递效率。 静电吸盘设置在设置在基板处理装置的室中的基座的上部。 在静电卡盘的表面处理中,在静电卡盘的表面上形成喷涂膜,然后通过与磨石接触来研磨静电卡盘的表面,然后将静电卡盘的表面磨平 通过与其接触的研磨板在其表面上喷涂悬浮液,然后通过与胶带研磨装置的带接触,将静电卡盘的表面研磨成平滑的。

    SUBSTRATE MOUNTING STAGE AND SURFACE TREATMENT METHOD THEREFOR
    9.
    发明申请
    SUBSTRATE MOUNTING STAGE AND SURFACE TREATMENT METHOD THEREFOR 有权
    基板安装阶段及其表面处理方法

    公开(公告)号:US20080217291A1

    公开(公告)日:2008-09-11

    申请号:US12028904

    申请日:2008-02-11

    IPC分类号: C23F1/00 B44C1/22

    摘要: A substrate mounting stage that prevents poor attraction of substrates so as to improve the operating rate of a substrate processing apparatus. The substrate mounting stage is disposed in the substrate processing apparatus and has a substrate mounting surface on which a substrate is mounted. The arithmetic average roughness (Ra) of the substrate mounting surface is not less than a first predetermined value, and the initial wear height (Rpk) of the substrate mounting surface is not more than a second predetermined value.

    摘要翻译: 一种基板安装台,其防止基板的吸引力降低,从而提高基板处理装置的运转速度。 基板安装台设置在基板处理装置中,并且具有安装有基板的基板安装面。 基板安装面的算术平均粗糙度(Ra)不小于第一预定值,并且基板安装表面的初始磨损高度(Rpk)不大于第二预定值。

    APPARATUS AND METHOD FOR EVALUATING A SUBSTRATE MOUNTING DEVICE
    10.
    发明申请
    APPARATUS AND METHOD FOR EVALUATING A SUBSTRATE MOUNTING DEVICE 有权
    用于评估基板安装装置的装置和方法

    公开(公告)号:US20080098833A1

    公开(公告)日:2008-05-01

    申请号:US11925158

    申请日:2007-10-26

    IPC分类号: G01R31/02 H01L21/683

    摘要: An apparatus evaluates a substrate mounting device adapted to hold a target substrate placed on a mounting surface and to control a temperature of the target substrate. The apparatus includes an evacuatable airtightly sealed chamber accommodating therein the substrate mounting device, a heat source, arranged in a facing relationship with the mounting surface, for irradiating infrared light. The apparatus further includes an evaluation-purpose substrate adapted to be mounted on the mounting surface in place of the target substrate, the evaluation-purpose substrate being made of an infrared light absorbing material, and having a unit for measuring temperatures at plural sites on a surface and/or inside of the substrate.

    摘要翻译: 一种装置评价适于保持放置在安装表面上的目标基板并控制目标基板的温度的基板安装装置。 该装置包括可抽出的气密密封室,其容纳基板安装装置,以与安装表面相对的关系布置的用于照射红外光的热源。 该装置还包括适于安装在安装表面上以代替目标基板的评估用基板,评估用基板由红外光吸收材料制成,并且具有用于测量在多个位置上的温度的单元 表面和/或内部。