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    Apparatus for and method of processing substrate
    1.
    发明授权
    Apparatus for and method of processing substrate 失效
    基板处理装置及其处理方法

    公开(公告)号：US07578887B2

    公开(公告)日：2009-08-25

    申请号：US10765182

    申请日：2004-01-28

    申请人： Shinji Kajita ,  Ichiro Katakabe ,  Haruko Ono ,  Yuki Inoue ,  Sachiko Takeda

    发明人： Shinji Kajita ,  Ichiro Katakabe ,  Haruko Ono ,  Yuki Inoue ,  Sachiko Takeda

    IPC分类号： B08B3/00

    CPC分类号： H01L21/67051

    摘要： An apparatus for processing a substrate through successive steps including spin-drying the substrate with a single processing facility while preventing the substrate from being contaminated by a substrate processing liquid, etc. The apparatus for processing a substrate includes a substrate holder for holding and rotating a substrate, a scattering prevention cup for circumferentially surrounding the substrate held by the substrate holder to prevent a substrate processing liquid supplied to the substrate from being scattered around, and a scattering prevention cup cleaner for cleaning an inner wall surface of the scattering prevention cup.

    摘要翻译： 一种用于通过连续步骤处理衬底的装置，包括用单一处理设备旋转衬底，同时防止衬底被衬底处理液体等污染。用于处理衬底的设备包括用于保持和旋转衬底的衬底保持器 衬底，用于周向地围绕由衬底保持器保持的衬底的防散射杯，以防止供应到衬底的衬底处理液体被散射;以及用于清洁散射防止杯的内壁表面的防散射杯清洁器。

    Substrate processing method
    2.
    发明授权
    Substrate processing method 失效
    基板加工方法

    公开(公告)号：US07309449B2

    公开(公告)日：2007-12-18

    申请号：US10755314

    申请日：2004-01-13

    申请人： Haruko Ono ,  Sachiko Takeda ,  Ichiro Katakabe

    发明人： Haruko Ono ,  Sachiko Takeda ,  Ichiro Katakabe

    IPC分类号： B44C1/22

    CPC分类号： H01L21/32134 ,  C09G1/02 ,  H01L21/32115 ,  H01L21/7684

    摘要： A substrate processing enables etching of a barrier metal film at around room temperature without application of a mechanical load and without excessive etching of a necessary portion of copper. The substrate processing flattens a copper film and a barrier metal film, both exposed on a surface of a substrate, by using an etching liquid capable of adjusting the etching rate ratio between the copper film and the barrier metal film.

    摘要翻译： 基板处理使得能够在室温附近蚀刻阻挡金属膜，而不施加机械载荷，并且不会过度地蚀刻所需的铜部分。 基板处理通过使用能够调节铜膜和阻挡金属膜之间的蚀刻速率比的蚀刻液来平坦化在基板的表面上露出的铜膜和阻挡金属膜。

    Plating method and apparatus
    7.
    发明申请
    Plating method and apparatus 审中-公开
    电镀方法和装置

    公开(公告)号：US20070117365A1

    公开(公告)日：2007-05-24

    申请号：US10571751

    申请日：2004-09-29

    申请人： Fumio Kuriyama ,  Rei Kiumi ,  Nobutoshi Saito ,  Takashi Takemura ,  Masaaki Kimura ,  Sachiko Takeda ,  Yugang Guo

    发明人： Fumio Kuriyama ,  Rei Kiumi ,  Nobutoshi Saito ,  Takashi Takemura ,  Masaaki Kimura ,  Sachiko Takeda ,  Yugang Guo

    IPC分类号： H01L21/44

    CPC分类号： C23C18/182 ,  B05B13/0228 ,  C23C18/1632 ,  C23C18/1689 ,  C23C18/18 ,  C23C18/1824 ,  C23C18/1837 ,  C25D5/34 ,  C25D5/48 ,  C25D7/123 ,  C25D17/001 ,  H01L21/288 ,  H05K3/241 ,  H05K3/244

    摘要： A plating method comprising applying an ultraviolet ray to a surface of a substrate or exposing a surface of a substrate to an ozone gas or bringing a surface to a substrate into contact with ozone water or bringing a surface of a substrate into contact with electrolytic ionized water or performing a team treatment using steam on a surface of a substrate, and plating the surface of the substrate after said applying, exposing, bringing or performing process. A plating method comprising performing a team treatment using steam on a surface of a substrate, and performing a wet process on the surface of the substrate of a substrate with an acidic plating solution, cleaning the surface of the substrate with pure water and cleaning the surface of the substrate with an alkalescent aqueous solution. A plating apparatus adapted to perform at least one of said methods.

    摘要翻译： 一种电镀方法，其包括将紫外线施加到基板的表面或将基板的表面暴露于臭氧气体或使表面与基底接触的方式与臭氧水接触或使基板的表面与电解电离水接触 或者使用蒸镀在基板的表面上进行团队处理，以及在施加，曝光，进行或执行处理之后对基板的表面进行电镀。 一种电镀方法，包括使用蒸镀在基材表面进行团队处理，并用酸性电镀液对基板表面进行湿法处理，用纯水清洗基板的表面并清洗表面 的碱性水溶液。 适于执行所述方法中的至少一种的电镀装置。