公开(公告)号：US07578887B2

公开(公告)日：2009-08-25

申请号：US10765182

申请日：2004-01-28

申请人： Shinji Kajita ,  Ichiro Katakabe ,  Haruko Ono ,  Yuki Inoue ,  Sachiko Takeda

发明人： Shinji Kajita ,  Ichiro Katakabe ,  Haruko Ono ,  Yuki Inoue ,  Sachiko Takeda

IPC分类号： B08B3/00

CPC分类号： H01L21/67051

摘要： An apparatus for processing a substrate through successive steps including spin-drying the substrate with a single processing facility while preventing the substrate from being contaminated by a substrate processing liquid, etc. The apparatus for processing a substrate includes a substrate holder for holding and rotating a substrate, a scattering prevention cup for circumferentially surrounding the substrate held by the substrate holder to prevent a substrate processing liquid supplied to the substrate from being scattered around, and a scattering prevention cup cleaner for cleaning an inner wall surface of the scattering prevention cup.

摘要翻译： 一种用于通过连续步骤处理衬底的装置，包括用单一处理设备旋转衬底，同时防止衬底被衬底处理液体等污染。用于处理衬底的设备包括用于保持和旋转衬底的衬底保持器 衬底，用于周向地围绕由衬底保持器保持的衬底的防散射杯，以防止供应到衬底的衬底处理液体被散射;以及用于清洁散射防止杯的内壁表面的防散射杯清洁器。

公开(公告)号：US07309449B2

公开(公告)日：2007-12-18

申请号：US10755314

申请日：2004-01-13

申请人： Haruko Ono ,  Sachiko Takeda ,  Ichiro Katakabe

发明人： Haruko Ono ,  Sachiko Takeda ,  Ichiro Katakabe

IPC分类号： B44C1/22

CPC分类号： H01L21/32134 ,  C09G1/02 ,  H01L21/32115 ,  H01L21/7684

摘要： A substrate processing enables etching of a barrier metal film at around room temperature without application of a mechanical load and without excessive etching of a necessary portion of copper. The substrate processing flattens a copper film and a barrier metal film, both exposed on a surface of a substrate, by using an etching liquid capable of adjusting the etching rate ratio between the copper film and the barrier metal film.

摘要翻译： 基板处理使得能够在室温附近蚀刻阻挡金属膜，而不施加机械载荷，并且不会过度地蚀刻所需的铜部分。 基板处理通过使用能够调节铜膜和阻挡金属膜之间的蚀刻速率比的蚀刻液来平坦化在基板的表面上露出的铜膜和阻挡金属膜。

公开(公告)号：US09089881B2

公开(公告)日：2015-07-28

申请号：US13037487

申请日：2011-03-01

申请人： Xinming Wang ,  Fumitoshi Oikawa ,  Haruko Ono ,  Teruaki Hombo

发明人： Xinming Wang ,  Fumitoshi Oikawa ,  Haruko Ono ,  Teruaki Hombo

IPC分类号： B08B1/04 ,  H01L21/67

CPC分类号： H01L21/67046 ,  B08B1/04

摘要： A substrate is cleaned by performing a scrubbing process on a surface to be cleaned of the rotating substrate with a roll-shaped cleaning member while holding an outer circumferential surface of the roll-shaped cleaning member in contact with the surface to be cleaned of the substrate across a predetermined contact width. During at least a part of the scrubbing process, the roll-shaped cleaning member is placed at an offset cleaning position where the central axis of the roll-shaped cleaning member is spaced from the central axis of the substrate by a distance which is 0.14 to 0.5 times the contact width. The surface to be cleaned of the substrate is scrubbed with more uniform cleaning intensity while taking into account the cleaning intensity at each position (area) along the radial direction of the surface to be cleaned of the substrate.

摘要翻译： 通过在保持辊状清洁部件的外周面与基板的待清洗表面接触的同时用辊状清洁部件在旋转基板的待清洁表面上进行擦洗处理来清洁基板 跨越预定的接触宽度。 在洗涤过程的至少一部分期间，辊状清洁部件被放置在偏移清洁位置，其中辊状清洁部件的中心轴线与基板的中心轴线间隔开0.14至 接触宽度的0.5倍。 要清洁基材的表面，在考虑到沿基材待清洁表面的径向的每个位置（区域）处的清洁强度时，以更均匀的清洁强度进行擦洗。

公开(公告)号：US20070224811A1

公开(公告)日：2007-09-27

申请号：US11724305

申请日：2007-03-15

申请人： Xinming Wang ,  Akira Owatari ,  Haruko Ono ,  Tomoatsu Ishibashi ,  Daisuke Takagi

发明人： Xinming Wang ,  Akira Owatari ,  Haruko Ono ,  Tomoatsu Ishibashi ,  Daisuke Takagi

IPC分类号： H01L21/44 ,  C25D13/00

CPC分类号： H01L21/76849 ,  C23C18/1632 ,  C23C18/1844 ,  H01L21/288 ,  H01L21/67046 ,  H01L21/6723 ,  H01L21/76838

摘要： A substrate processing method can completely remove a corrosion inhibitor and/or a metal complex from a surface of a substrate prior to catalyst application processing and/or electroless plating, and can form a protective film having a uniform thickness on the surface of interconnects. The substrate processing method includes preparing a substrate having metal interconnects formed in an electric insulator, carrying out pre-processing of the substrate by bringing a cleaning member into contact with the front surface or both surfaces of the substrate in a wet state and moving them relative to each other while supplying a pre-processing liquid to the front surface or both surfaces of the substrate, and then forming a protective film selectively on surfaces of the metal interconnects by bringing the front surface of the substrate into contact with an electroless plating solution.

摘要翻译： 基板处理方法可以在催化剂涂覆处理和/或化学镀之前从基板的表面完全去除腐蚀抑制剂和/或金属络合物，并且可以在互连表面上形成具有均匀厚度的保护膜。 衬底处理方法包括制备在电绝缘体中形成有金属互连的衬底，通过使清洁构件与衬底的前表面或两个表面接触而进行预处理，并将其相对移动 同时向衬底的前表面或两个表面提供预处理液体，然后通过使衬底的前表面与化学镀溶液接触而在金属互连件的表面上选择性地形成保护膜。