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    Multilayer interference filter, manufacturing method for multilayer interference filter, solid-state imaging device and camera
    1.
    发明申请
    Multilayer interference filter, manufacturing method for multilayer interference filter, solid-state imaging device and camera 审中-公开
    多层干涉滤波器，多层干涉滤波器的制造方法，固态成像装置和相机

    公开(公告)号：US20060164720A1

    公开(公告)日：2006-07-27

    申请号：US11337599

    申请日：2006-01-24

    申请人： Shinji Yoshida ,  Yuichi Inaba ,  Masahiro Kasano

    发明人： Shinji Yoshida ,  Yuichi Inaba ,  Masahiro Kasano

    IPC分类号： F21V9/04

    CPC分类号： G02B5/284 ,  G02B5/285 ,  H04N5/2254

    摘要： A color filter is made from a silicon nitride, and has a multilayer structure including a silicon nitride layer and an airlayer. A multilayer film that selectively transmits green light has a seven-layer structure, in which two silicon nitride layers and one air layer is formed both above and below a spacer layer which is the air layer. On the other hand, each of a multilayer film that selectively transmits red light and a multilayer film that selectively transmits blue light has a silicon nitride layer as the spacer layer, and two silicon nitride layers and two air layers are formed both above and below the spacer layer. The silicon nitride layer is held by a holding part at a periphery thereof. Also, a hole is formed between multilayers for a manufacturing reason.

    摘要翻译： 滤色器由氮化硅制成，并且具有包括氮化硅层和空气层的多层结构。 选择性地透过绿光的多层膜具有七层结构，其中在作为空气层的间隔层的上方和下方形成两个氮化硅层和一个空气层。 另一方面，选择性地透过红光的多层膜和选择性透射蓝色光的多层膜中的每一层均具有氮化硅层作为间隔层，并且在上下形成两个氮化硅层和两个空气层 间隔层。 氮化硅层由其周围的保持部保持。 此外，由于制造原因，在多层之间形成孔。

    Solid-state imaging device and camera
    3.
    发明申请
    Solid-state imaging device and camera 有权
    固态成像装置和相机

    公开(公告)号：US20060285005A1

    公开(公告)日：2006-12-21

    申请号：US11452952

    申请日：2006-06-15

    申请人： Yuichi Inaba ,  Masahiro Kasano

    发明人： Yuichi Inaba ,  Masahiro Kasano

    IPC分类号： H04N5/225

    CPC分类号： H04N5/335 ,  H01L27/14621 ,  H01L27/14625 ,  H04N9/045

    摘要： A solid-state imaging device is composed of a P-type semiconductor layer, an interlayer insulation film, a multilayer interference filter and condenser lenses which have been successively laminated on an N-type semiconductor layer. A photodiode, in which N-type impurities have been ion-implanted, is formed per pixel in the P-type semiconductor layer on the interlayer insulation film side. The multilayer interference filter has a composition including λ/4 multilayer films and a plurality of spacer layers sandwiched therebetween. The λ/4 multilayer films are composed of alternately laminated monotitanium dioxide layers and monosilicon dioxide layers that have the same optical thickness. The spacer layers have optical thicknesses corresponding to colors of light they are to transmit. A spacer layer is not included in a green region. Instead, two monotitanium dioxide layers, each of which constitutes a λ/4 multilayer film, are adjoined to make a monotitanium dioxide layer with an optical thickness of λ/2.

    摘要翻译： 固态成像装置由已连续层叠在N型半导体层上的P型半导体层，层间绝缘膜，多层干涉滤光片和聚光透镜构成。 在层间绝缘膜侧的P型半导体层中，每像素形​​成已经离子注入了N型杂质的光电二极管。 多层干涉滤光器具有包括λ/ 4多层膜和夹在其间的多个间隔层的组成。 λ/ 4多层膜由具有相同光学厚度的交替层叠的单二氧化钛层和单二氧化硅层构成。 间隔层具有对应于它们要发射的光的颜色的光学厚度。 间隔层不包括在绿色区域中。 相反，两个单一二氧化钛层（其各自构成λ/ 4多层膜）被邻接以制造光学厚度为λ/ 2的单二氧化钛层。

    Solid-state imaging device with high pixel count that includes color filter with high color reproducibility and camera that uses it
    4.
    发明授权
    Solid-state imaging device with high pixel count that includes color filter with high color reproducibility and camera that uses it 有权
    具有高像素数量的固态成像装置，包括具有高色彩再现性的滤色镜和使用它的相机

    公开(公告)号：US07623166B2

    公开(公告)日：2009-11-24

    申请号：US11452952

    申请日：2006-06-15

    申请人： Yuichi Inaba ,  Masahiro Kasano

    发明人： Yuichi Inaba ,  Masahiro Kasano

    IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N9/04 ,  H04N9/083

    CPC分类号： H04N5/335 ,  H01L27/14621 ,  H01L27/14625 ,  H04N9/045

    摘要： A solid-state imaging device is composed of a P-type semiconductor layer, an interlayer insulation film, a multilayer interference filter and condenser lenses which have been successively laminated on an N-type semiconductor layer. A photodiode, in which N-type impurities have been ion-implanted, is formed per pixel in the P-type semiconductor layer on the interlayer insulation film side. The multilayer interference filter has a composition including λ/4 multilayer films and a plurality of spacer layers sandwiched therebetween. The λ/4 multilayer films are composed of alternately laminated monotitanium dioxide layers and monosilicon dioxide layers that have the same optical thickness. The spacer layers have optical thicknesses corresponding to colors of light they are to transmit. A spacer layer is not included in a green region. Instead, two monotitanium dioxide layers, each of which constitutes a λ/4 multilayer film, are adjoined to make a monotitanium dioxide layer with an optical thickness of λ/2.

    摘要翻译： 固态成像装置由已连续层叠在N型半导体层上的P型半导体层，层间绝缘膜，多层干涉滤光片和聚光透镜构成。 在层间绝缘膜侧的P型半导体层中，每像素形​​成已经离子注入了N型杂质的光电二极管。 多层干涉滤光器具有包括λ/ 4多层膜和夹在其间的多个间隔层的组成。 λ/ 4多层膜由具有相同光学厚度的交替层叠的单二氧化钛层和单二氧化硅层构成。 间隔层具有对应于它们要发射的光的颜色的光学厚度。 间隔层不包括在绿色区域中。 相反，两个单一二氧化钛层（其各自构成λ/ 4多层膜）被邻接以制造光学厚度为λ/ 2的单二氧化钛层。

    Process for Producing Solid-State Image Sensing Device, Solid-State Image Sensing Device and Camera
    7.
    发明申请
    Process for Producing Solid-State Image Sensing Device, Solid-State Image Sensing Device and Camera 审中-公开
    固态图像传感装置，固态图像传感装置和摄像机的制作工艺

    公开(公告)号：US20090273046A1

    公开(公告)日：2009-11-05

    申请号：US11887732

    申请日：2006-05-10

    申请人： Yuichi Inaba ,  Masahiro Kasano

    发明人： Yuichi Inaba ,  Masahiro Kasano

    IPC分类号： H01L31/0232 ,  H01L21/18

    CPC分类号： H01L27/14621 ,  G02B5/201 ,  G02B5/286 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14685 ,  H01L31/02165

    摘要： In the formation of a multilayer interference filter that is included in a solid-state imaging device, at the outset, a titanium dioxide layer (401), a silicon dioxide layer (402), a titanium dioxide layer (403), and a spacer layer are successively laminated on an interlayer insulation film (304) to form a lower films. Next, the reflectance characteristics of the lower films are measured to specify the thickness of the lower films. When the thickness is deviated from the design value, the thickness of the spacer layer (404), and the thickness of upper films that include titanium dioxide layers (407, 409) and silicon dioxide layers (408, 410) are changed. Then, according to the changes, the spacer layer (404) is etched to regulate the thickness, and the upper films are formed thereon.

    摘要翻译： 在固态成像装置中包含的多层干涉滤光片的形成中，首先，二氧化钛层（401），二氧化硅层（402），二氧化钛层（403）和间隔物 层连续地层压在层间绝缘膜（304）上以形成下膜。 接下来，测量下部膜的反射率特性以指定下部膜的厚度。 当厚度偏离设计值时，间隔层（404）的厚度和包括二氧化钛层（407,409）和二氧化硅层（408,410）的上部膜的厚度改变。 然后，根据变化，蚀刻间隔层（404）以调节厚度，并且在其上形成上部膜。

    Solid-state image pickup device, solid-state image pickup device manufacturing method and camera
    9.
    发明申请
    Solid-state image pickup device, solid-state image pickup device manufacturing method and camera 审中-公开
    固态图像拾取装置，固态图像拾取装置制造方法和相机

    公开(公告)号：US20080272449A1

    公开(公告)日：2008-11-06

    申请号：US11665601

    申请日：2005-10-14

    申请人： Yuichi Inaba ,  Masahiro Kasano

    发明人： Yuichi Inaba ,  Masahiro Kasano

    IPC分类号： H01L31/00 ,  H01L21/00

    CPC分类号： H04N5/2254 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H04N5/335

    摘要： A solid-state image pickup device 1 has a construction in which a P-type semiconductor layer 102, an insulating layer 104, a color filter 106, a light transmitting layer 107, and a light focusing layer 108 are sequentially laminated on an N-type semiconductor layer 101. A plurality of photodiodes 103 are formed in the P-type semiconductor layer 102 on the insulating layer 104 side. A light shielding film 105 is formed in the insulating layer 104. The plurality of photodiodes 103 are densely mounted by being unequally arranged two-dimensionally. The light-focusing efficiency can be improved because the plurality of photodiodes 103 closely arranged to each other share the light transmitting layer 107 and the light focusing layer 108.

    摘要翻译： 固体摄像装置1具有如下结构：P型半导体层102，绝缘层104，滤色器106，透光层107和光聚焦层108依次层叠在N- 在绝缘层104侧的P型半导体层102中形成多个光电二极管103。 在绝缘层104中形成有遮光膜105.多个光电二极管103通过不均匀地二维排列而密集地安装。 可以提高光聚焦效率，因为彼此紧密排列的多个光电二极管103共享透光层107和光聚焦层108。

    Manufacturing method of solid-state imaging device, solid-state imaging device, and camera
    10.
    发明申请
    Manufacturing method of solid-state imaging device, solid-state imaging device, and camera 审中-公开
    固态成像装置，固态成像装置和相机的制造方法

    公开(公告)号：US20070122935A1

    公开(公告)日：2007-05-31

    申请号：US11602179

    申请日：2006-11-21

    申请人： Masahiro Kasano ,  Yuichi Inaba ,  Keisuke Tanaka ,  Takumi Yamaguchi

    发明人： Masahiro Kasano ,  Yuichi Inaba ,  Keisuke Tanaka ,  Takumi Yamaguchi

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687

    摘要： A manufacturing method of a solid-state imaging device prevents generation of a space due to insufficient filling of a conductive material. Materials constituting a multilayer film 41 are sequentially deposited on a semiconductor substrate, and portions respectively included in a plug formation intended region and a surrounding region that surrounds the plug formation intended region are removed from the deposited multilayer film 41. Next, the plug formation intended region and the surrounding region from which the portions have been removed is refilled with a single insulating material, and a hole is formed on the plug formation intended region by etching. Then, the formed hole is filled with a conductive material to therefore form a plug.

    摘要翻译： 固态成像装置的制造方法防止由于导电材料的填充不充分而产生空间。 构成多层膜41的材料依次沉积在半导体衬底上，并且从沉积的多层膜41中去除分别包含在插塞形成预期区域中的部分和围绕插塞形成区域的周围区域。 接下来，使用单个绝缘材料重新填充已经去除了部分的插塞形成预期区域和周围区域，并且通过蚀刻在插塞形成预期区域上形成孔。 然后，形成的孔填充有导电材料，从而形成插头。