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公开(公告)号：US06541829B2
公开(公告)日：2003-04-01
申请号：US09726486
申请日：2000-12-01
IPC分类号： H01L2976
CPC分类号： H01L29/66583 , H01L21/823807 , H01L27/092 , H01L29/105 , H01L29/66537 , H01L29/66545 , H01L29/66628
摘要： A semiconductor device has a first semiconductor region formed in a semiconductor substrate and having a first conductivity type due to first-conductivity-type active impurities contained in the first semiconductor region, and a second semiconductor region formed between the first semiconductor region and the surface of the semiconductor substrate and having a second conductivity type due to second-conductivity-type active impurities contained in the second semiconductor region. The second semiconductor region contains first-conductivity-type active impurities whose concentration is zero or smaller than a quarter of a concentration of the second-conductivity-type active impurities contained in the second semiconductor region. An insulating film and a conductor are formed on the second semiconductor region. Third and fourth semiconductor regions of the second conductivity type are formed at the semiconductor surface in contact with the side faces of the second semiconductor region. This semiconductor device is capable of suppressing net impurity concentration variations as well as threshold voltage variations to be caused by a short channel effect or manufacturing variations.
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公开(公告)号：US07078776B2
公开(公告)日：2006-07-18
申请号：US10867797
申请日：2004-06-16
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66583 , H01L21/823807 , H01L27/092 , H01L29/105 , H01L29/66537 , H01L29/66545 , H01L29/66628
摘要： A semiconductor device has a first semiconductor region formed in a semiconductor substrate and having a first conductivity type due to first-conductivity-type active impurities contained in the first semiconductor region, and a second semiconductor region formed between the first semiconductor region and the surface of the semiconductor substrate and having a second conductivity type due to second-conductivity-type active impurities contained in the second semiconductor region. The second semiconductor region contains first-conductivity-type active impurities, whose concentration is zero or smaller than a quarter of a concentration of the second-conductivity-type active impurities contained in the second semiconductor region. An insulating film and a conductor are formed on the second semiconductor region. Third and fourth semiconductor regions of the second conductivity type are formed at the semiconductor surface in contact with the side faces of the second semiconductor region. This semiconductor device is capable of suppressing net impurity concentration variations as well as threshold voltage variations to be caused by a short channel effect or manufacturing variations.
摘要翻译： 半导体器件具有形成在半导体衬底中并且由于第一半导体区域中包含的第一导电型有源杂质而具有第一导电类型的第一半导体区域，以及形成在第一半导体区域和第一半导体区域之间的第二半导体区域 并且由于第二半导体区域中包含的第二导电型有源杂质而具有第二导电类型。 第二半导体区域包含第一导电型有源杂质，其浓度为零或小于第二半导体区域中所含的第二导电型有源杂质浓度的四分之一。 绝缘膜和导体形成在第二半导体区域上。 在与第二半导体区域的侧面接触的半导体表面处形成第二导电类型的第三和第四半导体区域。 该半导体器件能够抑制净杂质浓度变化以及由短沟道效应或制造变化引起的阈值电压变化。
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公开(公告)号：US06770944B2
公开(公告)日：2004-08-03
申请号：US10303806
申请日：2002-11-26
IPC分类号： H01L2976
CPC分类号： H01L29/66583 , H01L21/823807 , H01L27/092 , H01L29/105 , H01L29/66537 , H01L29/66545 , H01L29/66628
摘要： A semiconductor device has a first semiconductor region formed in a semiconductor substrate and having a first conductivity type due to first-conductivity-type active impurities contained in the first semiconductor region, and a second semiconductor region formed between the first semiconductor region and the surface of the semiconductor substrate and having a second conductivity type due to second-conductivity-type active impurities contained in the second semiconductor region. The second semiconductor region contains first-conductivity-type active impurities whose concentration is zero or smaller than a quarter of a concentration of the second-conductivity-type active impurities contained in the second semiconductor region. An insulating film and a conductor are formed on the second semiconductor region. Third and fourth semiconductor regions of the second conductivity type are formed at the semiconductor surface in contact with the side faces of the second semiconductor region. This semiconductor device is capable of suppressing net impurity concentration variations as well as threshold voltage variations to be caused by a short channel effect or manufacturing variations.
摘要翻译： 半导体器件具有形成在半导体衬底中并且由于第一半导体区域中包含的第一导电型有源杂质而具有第一导电类型的第一半导体区域，以及形成在第一半导体区域和第一半导体区域之间的第二半导体区域 并且由于第二半导体区域中包含的第二导电型有源杂质而具有第二导电类型。 第二半导体区域包含浓度为零或小于第二半导体区域中所含的第二导电型有源杂质的浓度的四分之一的第一导电型活性杂质。 绝缘膜和导体形成在第二半导体区域上。 在与第二半导体区域的侧面接触的半导体表面处形成第二导电类型的第三和第四半导体区域。 该半导体器件能够抑制净杂质浓度变化以及由短沟道效应或制造变化引起的阈值电压变化。
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公开(公告)号：US07772671B2
公开(公告)日：2010-08-10
申请号：US12068635
申请日：2008-02-08
申请人： Kyoichi Suguro , Kiyotaka Miyano , Ichiro Mizushima , Yoshitaka Tsunashima , Takayuki Hiraoka , Yasushi Akasaka , Tsunetoshi Arikado
发明人： Kyoichi Suguro , Kiyotaka Miyano , Ichiro Mizushima , Yoshitaka Tsunashima , Takayuki Hiraoka , Yasushi Akasaka , Tsunetoshi Arikado
IPC分类号： H01L29/00
CPC分类号： H01L21/28194 , H01L21/28088 , H01L21/28167 , H01L21/28185 , H01L21/28202 , H01L21/76262 , H01L21/823481 , H01L29/511 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66537 , H01L29/66545
摘要： A semiconductor device including a semiconductor substrate having on its surface a recess and at least one projection formed in the recess. The projection has a channel region and an element isolating insulating film is formed in the recess. A MIS type semiconductor element is formed on the semiconductor substrate and includes a gate electrode formed on the channel region of the projection via a gate insulating film. Source and drain regions are formed to pinch the channel region of the projection therebetween. A channel region of the MIS type semiconductor element is formed to reach the at least one projection located adjacent to the MIS type semiconductor element in its channel width direction via the recess. A top surface of the at least one projection is located higher than the top surface of the element isolating insulating film by 20 nm or more.
摘要翻译： 一种半导体器件，包括在其表面上具有凹部的半导体衬底和形成在凹部中的至少一个突起。 突起具有沟道区域，并且在凹部中形成元件隔离绝缘膜。 MIS半导体元件形成在半导体衬底上，并且包括通过栅极绝缘膜形成在突起的沟道区上的栅电极。 形成源区和漏区以夹住其间的突起的沟道区。 MIS型半导体元件的沟道区域形成为经由凹部在其沟道宽度方向上到达位于与MIS型半导体元件相邻的至少一个突起。 所述至少一个突起的顶表面比所述元件隔离绝缘膜的顶表面高20nm或更大。
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公开(公告)号：US07232751B2
公开(公告)日：2007-06-19
申请号：US11047975
申请日：2005-02-02
IPC分类号： H01L21/336
CPC分类号： H01L21/76897 , H01L21/28061 , H01L21/32051 , H01L21/76885 , H01L29/4941 , H01L29/6659 , H01L2924/0002 , H01L2924/00
摘要： According to the manufacturing method of the semiconductor device of the present invention, an oxide film is formed on a metal film formed on a main surface of a semiconductor substrate by exposing the metal film to the oxidizing gas. The oxide film is then reduced in a reducing atmosphere, and a protection film is formed on the surface of the metal film reduced in the reducing step. In this manner, the damage to the surface of the metal film can be prevented.
摘要翻译： 根据本发明的半导体器件的制造方法，通过将金属膜暴露于氧化气体，在形成于半导体基板的主面上的金属膜上形成氧化膜。 然后在还原气氛中还原氧化膜，并且在还原步骤中还原的金属膜的表面上形成保护膜。 以这种方式，可以防止对金属膜的表面的损坏。
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6.发明申请Semiconductor device having gate electrodes with polymetal structure of polycrystalline silicon films and metal films 有权具有多晶硅膜和金属膜的多金属结构的栅电极的半导体装置公开(公告)号：US20050062115A1
公开(公告)日：2005-03-24
申请号：US10962504
申请日：2004-10-13
IPC分类号： H01L29/78 , H01L21/28 , H01L29/49 , H01L29/76 , H01L21/3205
CPC分类号： H01L29/6656 , H01L21/28061 , H01L21/28247 , H01L29/4941
摘要： The semiconductor device comprises a pair of impurity diffused regions formed in a silicon substrate 10, spaced from each other, and a gate electrode 26 formed above the silicon substrate 10 between the pair of impurity diffused regions 38 intervening a gate insulation film 12 therebetween. The gate electrode 26 is formed of a polycrystalline silicon film 16 formed on the gate insulation film 12, a polycrystalline silicon film 30 formed on the polycrystalline silicon film 16 and having crystal grain boundaries discontinuous to the polycrystalline silicon film 16, a metal nitride film 20 formed on the polycrystalline silicon film 30, and a metal film 22 formed on the barrier metal film 20. Whereby diffusion of the boron from the first polycrystalline silicon film 16 toward the metal nitride film 20 can be decreased. Thus, depletion of the gate electrode 26 can be suppressed.
摘要翻译： 半导体器件包括彼此间隔开的形成在硅衬底10中的一对杂质扩散区域，以及在栅极绝缘膜12之间形成的一对杂质扩散区域38之间形成在硅衬底10上方的栅电极26。 栅电极26由形成在栅极绝缘膜12上的多晶硅膜16，形成在多晶硅膜16上并具有与多晶硅膜16不连续的晶粒边界的多晶硅膜30，金属氮化物膜20 形成在多晶硅膜30上的金属膜22和形成在阻挡金属膜20上的金属膜22.由此可以减少硼从第一多晶硅膜16朝向金属氮化物膜20的扩散。 因此，能够抑制栅电极26的耗尽。
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公开(公告)号：US6162741A
公开(公告)日：2000-12-19
申请号：US982416
申请日：1997-12-02
IPC分类号： H01L29/43 , H01L21/28 , H01L21/3205 , H01L21/336 , H01L21/60 , H01L21/768 , H01L23/52 , H01L29/423 , H01L29/49 , H01L29/78 , H01L21/8232
CPC分类号： H01L21/28247 , H01L21/28061 , H01L21/32051 , H01L21/76834 , H01L21/76885 , H01L21/76897 , H01L29/4941 , H01L29/6656 , H01L29/6659 , H01L2924/0002 , H01L2924/00
摘要： According to the manufacturing method of the semiconductor device of the present invention, an oxide film is formed on a metal film formed on a main surface of a semiconductor substrate by exposing the metal film to the oxidizing gas. The oxide film is then reduced in a reducing atmosphere, and a protection film is formed on the surface of the metal film reduced in the reducing step. In this manner, the damage to the surface of the metal film can be prevented.
摘要翻译： 根据本发明的半导体器件的制造方法，通过将金属膜暴露于氧化气体，在形成于半导体基板的主面上的金属膜上形成氧化膜。 然后在还原气氛中还原氧化膜，并且在还原步骤中还原的金属膜的表面上形成保护膜。 以这种方式，可以防止对金属膜的表面的损坏。
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公开(公告)号：US6100193A
公开(公告)日：2000-08-08
申请号：US936532
申请日：1997-09-24
IPC分类号： H01L21/28 , H01L21/336 , H01L21/768 , H01L29/423 , H01L29/45 , H01L29/49 , H01L21/44
CPC分类号： H01L21/28061 , H01L21/28247 , H01L21/768 , H01L29/42376 , H01L29/456 , H01L29/4941 , H01L29/66575 , H01L29/6659 , H01L2924/0002
摘要： A MOSFET in which the gate electrode is formed of a polycrystalline silicon film, a silicon nitride film having a nitrogen surface density of lens than 8.times.10.sup.14 cm.sup.-2, and a tungsten film--these films formed one upon another in the order mentioned. The gate electrode thus formed, serves to shorten the delay time of the MOSFET.
摘要翻译： 栅电极由多晶硅膜形成的MOSFET，具有透镜的氮表面密度的氮化硅膜比8×10 14 cm -2，以及这些膜以这样的顺序依次形成的钨膜。 这样形成的栅电极用于缩短MOSFET的延迟时间。
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公开(公告)号：US5719410A
公开(公告)日：1998-02-17
申请号：US767149
申请日：1996-12-16
IPC分类号： H01L21/28 , H01L21/336 , H01L21/768 , H01L29/423 , H01L29/45 , H01L29/49 , H01L23/48
CPC分类号： H01L21/28061 , H01L21/28247 , H01L21/768 , H01L29/42376 , H01L29/456 , H01L29/4941 , H01L29/66575 , H01L29/6659 , H01L2924/0002
摘要： A MOSFET in which the gate electrode is formed of a polycrystalline silicon film, a silicon nitride film having a nitrogen surface density of lens than 8.times.10.sup.14 cm.sup.-2, and a tungsten film--these films formed one upon another in the order mentioned. The gate electrode thus formed, serves to shorten the delay time of the MOSFET.
摘要翻译： 栅电极由多晶硅膜形成的MOSFET，具有透镜的氮表面密度的氮化硅膜比8×10 14 cm -2，以及这些膜以这样的顺序依次形成的钨膜。 这样形成的栅电极用于缩短MOSFET的延迟时间。
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10.发明授权公开(公告)号：US06939787B2
公开(公告)日：2005-09-06
申请号：US10962504
申请日：2004-10-13
IPC分类号： H01L29/78 , H01L21/28 , H01L29/49 , H01L21/3205 , H01L21/4763
CPC分类号： H01L29/6656 , H01L21/28061 , H01L21/28247 , H01L29/4941
摘要： The semiconductor device comprises a pair of impurity diffused regions formed in a silicon substrate 10, spaced from each other, and a gate electrode 26 formed above the silicon substrate 10 between the pair of impurity diffused regions 38 intervening a gate insulation film 12 therebetween. The gate electrode 26 is formed of a polycrystalline silicon film 16 formed on the gate insulation film 12, a polycrystalline silicon film 30 formed on the polycrystalline silicon film 16 and having crystal grain boundaries discontinuous to the polycrystalline silicon film 16, a metal nitride film 20 formed on the polycrystalline silicon film 30, and a metal film 22 formed on the barrier metal film 20. Whereby diffusion of the boron from the first polycrystalline silicon film 16 toward the metal nitride film 20 can be decreased. Thus, depletion of the gate electrode 26 can be suppressed.
摘要翻译： 半导体器件包括彼此间隔开的形成在硅衬底10中的一对杂质扩散区域，以及在栅极绝缘膜12之间形成的一对杂质扩散区域38之间形成在硅衬底10上方的栅电极26。 栅电极26由形成在栅极绝缘膜12上的多晶硅膜16，形成在多晶硅膜16上并具有与多晶硅膜16不连续的晶粒边界的多晶硅膜30，金属氮化物膜20 形成在多晶硅膜30上，金属膜22形成在阻挡金属膜20上。 由此可以减少硼从第一多晶硅膜16朝向金属氮化物膜20的扩散。 因此，能够抑制栅电极26的耗尽。
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