摘要:
The invention relates to a curing accelerator for a curing resin obtained by reacting a phosphine compound (a) with a compound (b) having at least one halogen atom substituted on an aromatic ring and at least one proton atom which can be discharged, and subjecting the reaction product to dehydrohalogenation, a curing resin composition containing the curing accelerator, and an electronic component device having a device component encapsulated with the curing resin composition. The curing accelerator exhibits superior curability under moisture absorption, flow properties, reflow cracking resistance and high-temperature storage characteristics.
摘要:
The invention relates to a curing accelerator for a curing resin obtained by reacting a phosphine compound (a) with a compound (b) having at least one halogen atom substituted on an aromatic ring and at least one proton atom which can be discharged, and subjecting the reaction product to dehydrohalogenation, a curing resin composition containing the curing accelerator, and an electronic component device having a device component encapsulated with the curing resin composition. The curing accelerator exhibits superior curability under moisture absorption, flow properties, reflow cracking resistance and high-temperature storage characteristics.
摘要:
The invention relates to a curing accelerator for a curing resin obtained by reacting a phosphine compound (a) with a compound (b) having at least one halogen atom substituted on an aromatic ring and at least one proton atom which can be discharged, and subjecting the reaction product to dehydrohalogenation, a curing resin composition containing the curing accelerator, and an electronic component device having a device component encapsulated with the curing resin composition. The curing accelerator exhibits superior curability under moisture absorption, flow properties, reflow cracking resistance and high-temperature storage characteristics.
摘要:
A curing accelerator for a curing resin of the invention is represented by the following general formula (I). R1 to R3 in the formula (I) represent a hydrogen atom, or a substituted or unsubstituted hydrocarbon group having 1 to 18 carbon atoms, and each may be the same or different. Two or more of R1 to R3 may be bonded to have a ring structure. R4 to R7 represent a hydrogen atom or a substituted or unsubstituted monovalent organic group having 1 to 18 carbon atoms, and each may be the same or different. Y− represents a group in which one proton is discharged from a monovalent group having 0 to 18 carbon atoms and having at least one proton capable of being discharged. Two or more of R4 to R7 and Y− may be bonded to have a ring structure. The curing accelerator exhibits superior curability under moisture absorption, flow properties, reflow cracking resistance and high-temperature storage characteristics.
摘要:
A curable resin which exhibits excellent heat resistance while including an extremely smaller amount of volatile component is disclosed, and an electronic component device having excellent reliability in heat resistance and the like which contains the above curable resin is provided. A curable resin obtained in reaction of at least one compound (a) selected from the group consisting of the silane compounds represented by the following Formula (I-1) and the partial condensates thereof with a phenol compound (b), comprising a remaining volatile component in an amount of 10 wt % or less with respect to the total weight of the curable resin is used as a curing agent. [Formula 1] R1nSiR2(4-n) (I-1) (Wherein, n denotes a number of 0 to 2; R1 represent a hydrogen atom, or substituted or unsubstituted hydrocarbon groups having 1 to 18 carbon atoms; R2 represent a halogen atom, a hydroxyl group, substituted or unsubstituted oxy groups, amino groups, and carbonyloxy groups having 1 to 18 carbon atoms; and two or more of R1 and R2 may bind to each other to form a cyclic structure).
摘要翻译:公开了一种显示出优异的耐热性同时包含极少挥发性成分的固化树脂,并且提供了含有上述可固化树脂的具有优异的耐热性等可靠性的电子部件装置。 将选自由下式(I-1)表示的硅烷化合物和其部分缩合物的至少一种化合物(a)与酚化合物(b)反应获得的可固化树脂,其包含剩余的挥发性 使用相对于固化性树脂的总重量为10重量%以下的成分作为固化剂。 [式1] R 1 n SiR 2(4-n)(I-1)(其中,n表示0〜2的数; R 1表示氢原子,或取代或未取代的碳原子数1〜18的烃基, 原子,羟基,取代或未取代的氧基,氨基和碳原子数为1〜18的碳氧基; R2和R2中的两个以上可以相互结合形成环状结构)。
摘要:
There is disclosed an encapsulating epoxy resin composition, containing an epoxy resin (A), a curing agent (B), and a composite metal hydroxide (C), and having a mold release force under shearing after 10 shots of molding which is less than or equal to 200 KPa. The resin composition is preferably applied for encapsulating a semiconductor device having at least one of features including: (a) at least one of an encapsulating material of an upper side of a semiconductor chip and an encapsulating material of a lower side of the semiconductor chip has a thickness less than or equal to 0.7 mm; (b) a pin count is greater than or equal to 80; (c) a wire length is greater than or equal to 2 mm; (d) a pad pitch on the semiconductor chip is less than or equal to 90 (m; (e) a thickness of a package, in which the semiconductor chip is disposed on a mounting substrate, is less than or equal to 2 mm; and (f) an area of the semiconductor chip is greater than or equal to 25 mm2.
摘要:
A curing accelerator for a curing resin of the invention is represented by the following general formula (I). R1 to R3 in the formula (I) represent a hydrogen atom, or a substituted or unsubstituted hydrocarbon group having 1 to 18 carbon atoms, and each may be the same or different. Two or more of R1 to R3 may be bonded to have a ring structure. R4 to R7 represent a hydrogen atom or a substituted or unsubstituted monovalent organic group having 1 to 18 carbon atoms, and each may be the same or different. Y− represents a group in which one proton is discharged from a monovalent group having 0 to 18 carbon atoms and having at least one proton capable of being discharged. Two or more of R4 to R7 and Y− may be bonded to have a ring structure. The curing accelerator exhibits superior curability under moisture absorption, flow properties, reflow cracking resistance and high-temperature storage characteristics.
摘要:
Nitrogen compounds represented by formula (XXIa) or (XXIb); an epoxy resin hardening accelerator and a resin composition each containing any of the compounds; and an electronic part device containing an element encapsulated with the composition. In the formulae, R1 and R2 each represents hydrogen or a C1-20 monovalent organic group; R3 and R4 each represents a C1-20 divalnt organic group; R5 represents hydrogen or a C1-6 monovalent organic group; k is an integer of 0 to 2; and p is 0 or 1.
摘要:
A curable resin which exhibits excellent heat resistance while including an extremely smaller amount of volatile component is disclosed, and an electronic component device having excellent reliability in heat resistance and the like which contains the above curable resin is provided. A curable resin obtained in reaction of at least one compound (a) selected from the group consisting of the silane compounds represented by the following Formula (I-1) and the partial condensates thereof with a phenol compound (b), comprising a remaining volatile component in an amount of 10 wt % or less with respect to the total weight of the curable resin is used as a curing agent. [Formula 1] R1nSiR2(4-n) (I-1) (Wherein, n denotes a number of 0 to 2; R1 represent a hydrogen atom, or substituted or unsubstituted hydrocarbon groups having 1 to 18 carbon atoms; R2 represent a halogen atom, a hydroxyl group, substituted or unsubstituted oxy groups, amino groups, and carbonyloxy groups having 1 to 18 carbon atoms; and two or more of R1 and R2 may bind to each other to form a cyclic structure).
摘要:
There is provided a substrate processing method, in which a throughput can be improved even in case the time for recovery processing for restoring the state of a processing chamber is longer than the time for predetermined processing to be performed in the processing chamber. Substrates are alternately transferred to two processing chambers C, D, and the same film forming processing is performed on the substrates in the processing chambers C, D in parallel with each other. When the number of substrates processed in the processing chamber C has reached a predetermined number (11 substrates), dummy sputtering processing in the film forming chamber C is started and also 23rd-25th substrates of the first lot are transferred to the film forming chamber D to thereby perform film forming processing until the dummy sputtering processing is finished.