Method of manufacturing a semiconductor device
    1.
    发明授权
    Method of manufacturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US6033952A

    公开(公告)日:2000-03-07

    申请号:US307567

    申请日:1999-05-10

    IPC分类号: H01L21/02 H01L21/8242

    CPC分类号: H01L27/10852 H01L28/82

    摘要: A semiconductor device manufacturing method which involves a fewer number of manufacturing processes and which eliminates the use of expensive high precision stepper and half-tone mask, or the like, by employing a simplified process flow, in which method an identical mask is reused to ensure registration margin without involving a high-resolution process. A contact hole requires solely a minimum diameter of 0.30 .mu.m or thereabouts, thereby resulting in and added margin for the minimum diameter and eliminating a process for reducing a hole diameter. Even if the hole diameter has a deviation of about 0.05 .mu.m, contact can be established with a silicon substrate, thereby eliminating a necessity for an expensive, high precision stepper which has been required for ensuring a registration margin. A damaged layer, which would otherwise cause an increase in the resistance of the storage node direct contact, is eliminated simultaneously with etching of a thick polysilicon film, thus eliminating a chemical dry etching (CDE) process which has conventionally been used for removing a damaged layer.

    摘要翻译: 一种半导体器件制造方法,其采用较少数量的制造工艺,并且通过采用简化的工艺流程来消除昂贵的高精度步进器和半色调掩模等的使用,其中相同的掩模被重复使用以确保 注册保证金不涉及高分辨率的过程。 接触孔仅需要0.30μm左右的最小直径,从而导致并增加最小直径的余量,并消除减小孔直径的工艺。 即使孔径具有约0.05μm的偏差,也可以与硅衬底建立接触,从而不需要为确保配准余量而需要的昂贵的高精度步进器。 否则会导致存储节点直接接触的电阻增加的损坏层与蚀刻厚多晶硅膜同时消除,从而消除了传统上用于去除损坏的化学干蚀刻(CDE)工艺 层。

    Semiconductor device and manufacturing method thereof
    2.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号:US06580113B2

    公开(公告)日:2003-06-17

    申请号:US09340394

    申请日:1999-06-28

    IPC分类号: H01L2994

    CPC分类号: H01L27/10855 H01L28/84

    摘要: There is described a high-integration, superior-power-efficiency semiconductor device having a storage node, whose structure is suitable for enabling high-yield and inexpensive manufacture. A plurality of transfer gates are formed on a silicon substrate. An interlayer film is provided so as to cover the transfer gates. A hollow node is formed from conductive material on the interlayer film. A contact hole is formed so as to penetrate through the interlayer film without exposing the transfer gate, as well as to expose the surface of the silicon substrate within the hollow node. A conductive layer is formed so as to cover the interior surface of the contact hole to a predetermined thickness in the region ranging from the interior surface of the hollow node to the exposed portion of the silicon substrate.

    摘要翻译: 描述了一种具有存储节点的高集成,高功率效率的半导体器件,其结构适于实现高产量和廉价的制造。 在硅衬底上形成多个传输门。 设置夹层膜以覆盖传送门。 中间节点由中间膜上的导电材料形成。 形成接触孔以穿透中间膜而不暴露传输门,以及使中空节点内的硅衬底的表面露出。 导电层形成为在从中空节点的内表面到硅衬底的暴露部分的范围内覆盖接触孔的内表面至预定的厚度。

    Method of manufacturing semiconductor device including steps of forming groove and recess, and semiconductor device
    3.
    发明授权
    Method of manufacturing semiconductor device including steps of forming groove and recess, and semiconductor device 失效
    制造半导体器件的方法包括形成凹槽和凹槽的步骤以及半导体器件

    公开(公告)号:US06743708B2

    公开(公告)日:2004-06-01

    申请号:US10266608

    申请日:2002-10-09

    IPC分类号: H01L214763

    摘要: An interlayer insulation film (31) on a plug (11) is etched using a silicon nitride film (32) used in pattern etching of a bit line (12) as a hard mask such that the plug (11) projects into a groove (40). Another silicon nitride film (33) is provided to cover an exposed surface of the groove (40), the bit line (12) and the silicon nitride film (32), thereby forming another interlayer insulation film (34) on the silicon nitride film (33) to fill the groove (40). The silicon nitride films (33, 32) are used as an etching stopper to etch the interlayer insulation film (34) above the plug (11). The silicon nitride film (33) on the plug (11) is etched to expose the plug (11) into a recess.

    摘要翻译: 使用在作为硬掩模的位线(12)的图案蚀刻中使用的氮化硅膜(32)蚀刻插头(11)上的层间绝缘膜(31),使得插头(11)突入凹槽 40)。 提供另一个氮化硅膜(33)以覆盖凹槽(40),位线(12)和氮化硅膜(32)的暴露表面,由此在氮化硅膜上形成另一层间绝缘膜(34) (33)以填充凹槽(40)。 氮化硅膜(33,32)用作蚀刻阻挡层,以蚀刻插头(11)上方的层间绝缘膜(34)。 对插头(11)上的氮化硅膜(33)进行蚀刻以使插头(11)露出凹槽。

    PLANAR LIGHTWAVE CIRCUIT AND OPTICAL RECEIVER
    5.
    发明申请
    PLANAR LIGHTWAVE CIRCUIT AND OPTICAL RECEIVER 有权
    平面灯电路和光接收器

    公开(公告)号:US20140212137A1

    公开(公告)日:2014-07-31

    申请号:US14348301

    申请日:2012-09-13

    申请人: Shinya Watanabe

    发明人: Shinya Watanabe

    IPC分类号: H04B10/69 H04J14/06

    摘要: A planar lightwave circuit and an optical receiver which reduce degradation in signal quality is provided.A planar lightwave circuit includes: a substrate with a straight groove formed therein; a signal light input port which is formed in the substrate and receives signal light; a first planar filter part which is fitted into the groove and separates the signal light into a signal light component including a first polarization state and that including a second polarization state; a second planar filter part which is fitted into the groove and separates the local oscillator light into a local oscillator light component including the first polarization state and that including the second polarization state; a first interference part formed in the substrate; a second interference part which is formed on a side of the substrate opposite to the side of the first interference part across the groove; a first waveguide which is connected to the signal light input port and also to a reflection surface of the first planar filter part; a second and a third waveguide; a fourth waveguide which is connected to the local oscillator light input port and also to a reflection surface of the second planar filter part; and a fifth and a sixth waveguide.

    摘要翻译: 提供了降低信号质量降低的平面光波电路和光接收器。 平面光波电路包括:形成有直槽的基板; 信号光输入端口,其形成在所述基板中并接收信号光; 第一平面过滤器部件,其装配到所述槽中,并将所述信号光分离成包括第一偏振状态并且包括第二偏振状态的信号光分量; 第二平面过滤器部件,其装配到所述凹槽中,并将所述本地振荡器光分离成包括所述第一偏振状态并且包括所述第二偏振状态的本地振荡器光分量; 形成在所述基板中的第一干涉部; 第二干涉部,其形成在与所述第一干涉部的与所述凹槽的侧面相反的一侧上; 第一波导,其连接到信号光输入端口,并且还连接到第一平面滤波器部分的反射表面; 第二和第三波导; 第四波导,其连接到本地振荡器光输入端口,并且还连接到第二平面滤波器部分的反射表面; 以及第五和第六波导。

    Image formation device, image formation method and non-transitory storage medium storing image formation program
    6.
    发明授权
    Image formation device, image formation method and non-transitory storage medium storing image formation program 有权
    图像形成装置,图像形成方法和存储图像形成程序的非暂时性存储介质

    公开(公告)号:US08639138B2

    公开(公告)日:2014-01-28

    申请号:US13112703

    申请日:2011-05-20

    IPC分类号: G03G15/00 G03G15/20

    摘要: An image formation device includes a receiving section, a formation section, a fixing section, a switching section, and a controller. The receiving section receives image formation data including image data, and sheet data which includes designations of a sheet and a corresponding fixing pressure. The formation section forms a toner image on the sheet. The fixing section fixes the toner image on the sheet. The switching section switches the fixing pressure between a first or second fixing pressure. When the fixing pressure is switched to the second fixing pressure and the fixing pressure designated by the sheet data is the first fixing pressure, the controller performs a mandatory image formation that includes a low-speed control that conveys the sheet at a speed lower than that for the first fixing pressure, and/or a toner suppression control that performs image formation with a smaller amount of toner than in normal.

    摘要翻译: 图像形成装置包括接收部分,形成部分,固定部分,切换部分和控制器。 接收部分接收包括图像数据的图像形成数据和包括纸张的指定和相应的定影压力的纸张数据。 形成部分在片材上形成调色剂图像。 固定部分将调色剂图像固定在片材上。 切换部分在第一或第二固定压力之间切换固定压力。 当定影压力切换到第二定影压力并且由片材数据指定的定影压力是第一定影压力时,控制器执行强制性图像形成,其包括以低于该速度的速度传送纸张的低速控制的低速控制 用于第一定影压力和/或调色剂抑制控制,其以比正常情况更少量的调色剂进行图像形成。

    OPTICAL WAVEGUIDE DEVICE AND METHOD OF MANUFACTURING THEREOF
    7.
    发明申请
    OPTICAL WAVEGUIDE DEVICE AND METHOD OF MANUFACTURING THEREOF 有权
    光波导装置及其制造方法

    公开(公告)号:US20120002931A1

    公开(公告)日:2012-01-05

    申请号:US13256168

    申请日:2010-03-15

    申请人: Shinya Watanabe

    发明人: Shinya Watanabe

    IPC分类号: G02B6/02 G02B6/136

    CPC分类号: G02B6/423

    摘要: In an optical waveguide device of the present invention, optical element mount (17) includes first base block (19a) for supporting first optical element (18a) and second base block (19b) for supporting second optical element (18b) that has an active layer depth smaller than that of first optical element (18a). Second base block (19b) is formed from stacks of upper clad layers whose number of stacks is larger than that of first base block (19a). Difference (h1) in height between the first and second base blocks is equal to difference (d1−d2) in active layer depth between the first and second optical elements.

    摘要翻译: 在本发明的光波导装置中,光学元件安装件(17)包括用于支撑第一光学元件(18a)的第一基座块(19a)和用于支撑第二光学元件(18b)的第二基座块(19b) 层深度小于第一光学元件(18a)的深度。 第二基块(19b)由堆叠的堆叠数量大于第一基块(19a)的堆叠构成。 第一和第二基本块之间的高度差(h1)等于第一和第二光学元件之间有效层深度的差(d1-d2)。

    Optical waveguide device and manufacturing method thereof
    8.
    发明授权
    Optical waveguide device and manufacturing method thereof 有权
    光波导器件及其制造方法

    公开(公告)号:US08036507B2

    公开(公告)日:2011-10-11

    申请号:US12501066

    申请日:2009-07-10

    申请人: Shinya Watanabe

    发明人: Shinya Watanabe

    IPC分类号: G02B6/26

    CPC分类号: G02B6/12004 G02B6/423

    摘要: An optical waveguide device includes: a substrate; an optical element arranged on the substrate; and an optical circuit part having an optical waveguide formed on the substrate. The optical circuit part includes: a core whose optical axis is matched with the optical element; and a dummy core arranged on a same layer to the core and exposed on a side being not opposed to the optical element when the optical element is arranged on the substrate. The relative position between the optical waveguide and the optical element can be recognized by observing the dummy core. The planar shape of the optical circuit has a convex portion. The width of the convex portion and the width of the optical element are same in the opposing edge face where the optical element and the core is opposed to one another.

    摘要翻译: 光波导装置包括:基板; 布置在所述基板上的光学元件; 以及在该基板上形成有光波导的光电路部。 光电路部分包括:光轴与光学元件匹配的芯; 以及当光学元件布置在基板上时,与核心布置在同一层上并且在与光学元件不相对的一侧上露出的伪芯。 可以通过观察虚拟核心来识别光波导与光学元件之间的相对位置。 光电路的平面形状具有凸部。 在光学元件和芯彼此相对的相对边缘面中,凸部的宽度和光学元件的宽度相同。

    Method for preparing optically active compound
    9.
    发明授权
    Method for preparing optically active compound 失效
    光学活性化合物的制备方法

    公开(公告)号:US07846701B2

    公开(公告)日:2010-12-07

    申请号:US11667688

    申请日:2005-10-31

    IPC分类号: C12P7/26

    CPC分类号: C12P7/26 C12P41/003

    摘要: According to the present invention, there is provided a method for preparing an optically active compound, characterized in that said method comprises permitting a mixture of optical isomers relative to the carbon atom in the β-position in relation to the carbon atom bound to an esterified hydroxy group of an enol ester to hydrolyse either one optical isomer preferentially in the presence of an enzyme and allowing the carbonyl compound resulting from such hydrolysis to enrich the proportion of its isomer having either one configuration in the β-position in relation to the carbonyl group or allowing the enol ester left non-hydrolyzed to enrich the proportion of its isomer having either one configuration on the carbon atom in the β-position in relation to the carbon atom to which the esterified hydroxyl group bonds.

    摘要翻译: 根据本发明,提供了一种制备光学活性化合物的方法,其特征在于所述方法包括允许相对于与一个碳原子结合的碳原子相对于碳原子的光学异构体的混合物 烯醇酯的酯化羟基在酶的存在下优先水解任一种旋光异构体,并使得由这种水解产生的羰基化合物能够富集其相对于化合物中的任何一种构型的其异构体的比例 使烯醇酯残留未水解以富集其相对于与酯化羟基键合的碳原子相关的碳原子上具有一个构型的异构体的比例。