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1.发明申请SEMICONDUCTOR DEVICE, METHOD OF MAKING THE SAME AND LIQUID CRYSTAL DISPLAY DEVICE 审中-公开半导体器件，其制造方法和液晶显示器件公开(公告)号：US20080111134A1
公开(公告)日：2008-05-15
申请号：US11969488
申请日：2008-01-04
CPC分类号： H01L29/78696 , G09G3/3648 , G09G2300/0408 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/045 , H01L29/41733 , H01L29/66757 , H01L29/66765 , H01L29/78666 , H01L29/78669 , H01L29/78675 , H01L29/78678
摘要： To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate. A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.
摘要翻译： 为了提供具有较高电子迁移率的改进的低温多晶层的TFT，并且鉴于通过利用玻璃基板实现具有大的显示面积的液晶显示装置，确保制造中的波动较小。 通过利用与金刚石结构的{111}双边界结合的多晶晶粒形成的半导体薄膜（称为准单晶薄膜），可以在特定波动的预定范围内实现具有较高电子迁移率的TFT 作为TFT的沟道区域（即有源区）。
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2.发明授权Semiconductor device, method of making the same and liquid crystal display device 有权半导体装置及其制造方法以及液晶显示装置公开(公告)号：US06903372B1
公开(公告)日：2005-06-07
申请号：US09698274
申请日：2000-10-30
IPC分类号： G02F1/136 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/417 , H01L29/786 , H01L29/76
CPC分类号： H01L29/78696 , G09G3/3648 , G09G2300/0408 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/045 , H01L29/41733 , H01L29/66757 , H01L29/66765 , H01L29/78666 , H01L29/78669 , H01L29/78675 , H01L29/78678
摘要： To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate.A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.
摘要翻译： 为了提供具有较高电子迁移率的改进的低温多晶层的TFT，并且鉴于通过利用玻璃基板实现具有大的显示面积的液晶显示装置，确保制造中的波动较小。 通过利用与金刚石结构的{111}双边界结合的多晶晶粒形成的半导体薄膜（称为准单晶薄膜），可以在特定波动的预定范围内实现具有较高电子迁移率的TFT 作为TFT的沟道区域（即有源区）。
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公开(公告)号：US20080206961A1
公开(公告)日：2008-08-28
申请号：US12010123
申请日：2008-01-22
IPC分类号： H01L21/20
CPC分类号： H01L21/823807 , H01L29/1054 , H01L29/7782 , H01L29/7848
摘要： In order to provide a semiconductor device having a field effect transistor with a low power consumption and a high speed by use of the combination of Si and an element such as Ge, C or the like of the same group as Si, a strain is applied by a strain applying semiconductor layer 2 to a channel forming layer I having a channel of the field effect transistor formed therein so that the mobility of carriers in the channel is made larger than the mobility of carriers in that material of the channel forming layer which is unstrained.
摘要翻译： 为了提供一种具有低功耗和高速的场效晶体管的半导体器件，其通过使用Si和诸如与Si相同的组的诸如Ge，C等元素的组合，施加应变 通过将半导体层2施加到其中形成有场效应晶体管的沟道的沟道形成层I的应变，使得沟道中的载流子的迁移率大于沟道形成层的材料中的载流子的迁移率， 无限制
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公开(公告)号：US20050017236A1
公开(公告)日：2005-01-27
申请号：US10920432
申请日：2004-08-18
IPC分类号： H01L29/78 , H01L21/8238 , H01L27/092 , H01L29/06 , H01L29/10 , H01L29/76 , H01L29/778 , H01L29/94
CPC分类号： H01L21/823807 , H01L29/1054 , H01L29/7782 , H01L29/7848
摘要： In order to provide a semiconductor device having a field effect transistor with a low power consumption and a high speed by use of the combination of Si and an element such as Ge, C or the like of the same group as Si, a strain is applied by a strain applying semiconductor layer 2 to a channel forming layer 1 having a channel of the field effect transistor formed therein so that the mobility of carriers in the channel is made larger than the mobility of carriers in that material of the channel forming layer which is unstrained.
摘要翻译： 为了提供一种具有低功耗和高速的场效晶体管的半导体器件，其通过使用Si和诸如与Si相同的组的诸如Ge，C等元素的组合，施加应变 通过将半导体层2施加到其中形成有场效应晶体管的沟道的沟道形成层1的应变，使得沟道中的载流子的迁移率大于沟道形成层的材料中的载流子的迁移率， 无限制
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公开(公告)号：US07579229B2
公开(公告)日：2009-08-25
申请号：US12010123
申请日：2008-01-22
IPC分类号： H01L21/762
CPC分类号： H01L21/823807 , H01L29/1054 , H01L29/7782 , H01L29/7848
摘要： In order to provide a semiconductor device having a field effect transistor with a low power consumption and a high speed by use of the combination of Si and an element such as Ge, C or the like of the same group as Si, a strain is applied by a strain applying semiconductor layer 2 to a channel forming layer I having a channel of the field effect transistor formed therein so that the mobility of carriers in the channel is made larger than the mobility of carriers in that material of the channel forming layer which is unstrained.
摘要翻译： 为了提供一种具有低功耗和高速的场效晶体管的半导体器件，其通过使用Si和诸如与Si相同的组的诸如Ge，C等元素的组合，施加应变 通过将半导体层2施加到其中形成有场效应晶体管的沟道的沟道形成层I的应变，使得沟道中的载流子的迁移率大于沟道形成层的材料中的载流子的迁移率， 无限制
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6.发明授权公开(公告)号：US06888162B2
公开(公告)日：2005-05-03
申请号：US10354121
申请日：2003-01-30
IPC分类号： G06F15/78 , G02F1/136 , G02F1/1368 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L21/02686 , H01L21/2026 , H01L27/1281 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66742 , H01L29/66757 , H01L29/66772 , H01L29/78654 , H01L29/78675 , H01L29/78684
摘要： An electronic apparatus employs a polycrystalline semiconductor thin film structure formed of an insulating substrate and a plurality of polycrystalline layers laminated on the insulating substrate. A plurality of transistors are formed at the surface of the polycrystalline semiconductor thin film structure, each transistor being formed in a region of one of a plurality of crystal grains disseminated on the surface of the polycrystalline layers. A number of crystal grains in each of the polycrystalline layers is gradually reduced from a lower layer to an upper layer.
摘要翻译： 电子设备采用由绝缘基板和层叠在绝缘基板上的多个多晶层形成的多晶半导体薄膜结构。 在多晶半导体薄膜结构的表面形成多个晶体管，每个晶体管形成在多晶层的表面上散布的多个晶粒中的一个晶体管的区域中。 各个多晶层中的多个晶粒从下层逐渐减小到上层。
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7.发明授权ELECTRONIC APPARATUS HAVING SEMICONDUCTOR DEVICE INCLUDING PLURALITY OF TRANSISTORS FORMED ON A POLYCRYSTALLINE LAYERED STRUCTURE IN WHICH THE NUMBER OF CRYSTAL GRAINS IN EACH POLYCRYSTALLINE LAYER IS GRADUALLY REDUCED FROM LOWER TO UPPER LAYER 失效具有半导体器件的电子设备，包括在多晶层结构中形成的晶体管的多样性，其中每个多晶层中的晶粒数量从较低层次降低到上层公开(公告)号：US06545294B1
公开(公告)日：2003-04-08
申请号：US09571937
申请日：2000-05-16
IPC分类号： H01L2904
CPC分类号： H01L21/02686 , H01L21/2026 , H01L27/1281 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66742 , H01L29/66757 , H01L29/66772 , H01L29/78654 , H01L29/78675 , H01L29/78684
摘要： The present invention provides an apparatus having a semiconductor device including a plurality of transistors formed on respective single crystal silicon regions of enlarged grain size. On a polycrystalline silicon layer, projections at regular intervals are formed by using anisotropic etching and a photomask. The tips of projections are composed of single crystal silicon of a specific crystal orientation selectively left by the anisotropic etching, which is a candidate for nuclei of amorphous silicon to be deposited thereon. By iterating the above process a plurality of times, and by gradually enlarging the pitch, span, size and height of projections, the size of the crystal grains of silicon at the surface may be enlarged to the extent required. Thereby, silicon crystal grains of large grain size with the crystal orientation aligned may be formed at controllable positions.
摘要翻译： 本发明提供一种具有半导体器件的装置，该半导体器件包括形成在增大晶粒尺寸的各个单晶硅区域上的多个晶体管。 在多晶硅层上，通过使用各向异性蚀刻和光掩模形成规则间隔的突起。 突起的尖端由通过各向异性蚀刻选择性留下的特定晶体取向的单晶硅组成，其是沉积在其上的非晶硅的核的候选者。 通过多次迭代上述处理，并且通过逐渐扩大突起的间距，跨度，尺寸和高度，可以将表面处的硅晶粒的尺寸扩大到所需的程度。 由此，可以在可控位置形成具有晶体取向取向的大晶粒尺寸的硅晶粒。
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8.发明授权Semiconductor device and semiconductor substrate having selectively etched portions filled with silicon germanium 失效具有填充有硅锗的选择性蚀刻部分的半导体器件和半导体衬底公开(公告)号：US08304810B2
公开(公告)日：2012-11-06
申请号：US12505942
申请日：2009-07-20
IPC分类号： H01L29/66
CPC分类号： H01L21/823807 , H01L29/1054 , H01L29/7782 , H01L29/7848
摘要： In order to provide a semiconductor device having a field effect transistor with a low power consumption and a high speed by use of the combination of Si and an element such as Ge, C or the like of the same group as Si, a strain is applied by a strain applying semiconductor layer 2 to a channel forming layer I having a channel of the field effect transistor formed therein so that the mobility of carriers in the channel is made larger than the mobility of carriers in that material of the channel forming layer which is unstrained.
摘要翻译： 为了提供一种具有低功耗和高速的场效晶体管的半导体器件，其通过使用Si和诸如与Si相同的组的诸如Ge，C等元素的组合，施加应变 通过将半导体层2施加到其中形成有场效应晶体管的沟道的沟道形成层I的应变，使得沟道中的载流子的迁移率大于沟道形成层的材料中的载流子的迁移率， 无限制
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9.发明授权Semiconductor device, method of making the same and liquid crystal display device 有权半导体装置及其制造方法以及液晶显示装置公开(公告)号：US07317207B2
公开(公告)日：2008-01-08
申请号：US11146016
申请日：2005-06-07
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , G09G3/3648 , G09G2300/0408 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/045 , H01L29/41733 , H01L29/66757 , H01L29/66765 , H01L29/78666 , H01L29/78669 , H01L29/78675 , H01L29/78678
摘要： To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate.A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.
摘要翻译： 为了提供具有较高电子迁移率的改进的低温多晶层的TFT，并且鉴于通过利用玻璃基板实现具有大的显示面积的液晶显示装置，确保制造中的波动较小。 通过利用与金刚石结构的{111}双边界结合的多晶晶粒形成的半导体薄膜（称为准单晶薄膜），可以在特定波动的预定范围内实现具有较高电子迁移率的TFT 作为TFT的沟道区域（即有源区）。
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公开(公告)号：US20050230683A1
公开(公告)日：2005-10-20
申请号：US11146016
申请日：2005-06-07
IPC分类号： G02F1/136 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/417 , H01L29/786
CPC分类号： H01L29/78696 , G09G3/3648 , G09G2300/0408 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/045 , H01L29/41733 , H01L29/66757 , H01L29/66765 , H01L29/78666 , H01L29/78669 , H01L29/78675 , H01L29/78678
摘要： To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate. A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.
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