摘要:
A MOS resistance controlling device includes: a plurality of MOS transistors having a first MOS transistor to N-th (the integer N is larger than 1) MOS transistor being serially connected, the source of the first MOS transistor being set to a first reference potential, the drain the N-th MOS transistor being set to a second reference potential, and the drain of an I-th MOS transistor being connected to the source of an I+1-th MOS transistor, where I is an integer from 1 to N−1; a current source which is electrically disposed at connection node between the drain of the N-th MOS transistors and the second reference potential; and an operational amplifier having a first input terminal being supplied with a third reference potential, a second input terminal connected with the connection node and an output terminal being connected with gates of the MOS transistors.
摘要:
A MOS resistance controlling device includes: a plurality of MOS transistors having a first MOS transistor to N-th (the integer N is larger than 1) MOS transistor being serially connected, the source of the first MOS transistor being set to a first reference potential, the drain the N-th MOS transistor being set to a second reference potential, and the drain of an I-th MOS transistor being connected to the source of an I+1-th MOS transistor, where I is an integer from 1 to N−1; a current source which is electrically disposed at connection node between the drain of the N-th MOS transistors and the second reference potential; and an operational amplifier having a first input terminal being supplied with a third reference potential, a second input terminal connected with the connection node and an output terminal being connected with gates of the MOS transistors.
摘要:
A radio transmitter including a combiner which combines input I/Q signals with feedback I/Q signals, a power amplifier which amplifies the quadrature modulated signal, a detector which detects amplitude and phase differences between the input and feedback I/Q signals, a switch to turn on and off the feedback I/Q signals, a generator to generate control signals which minimizes the amplitude difference and the phase difference, in a state where a transmission power is set, during for a period during which the switch is turned off, an amplitude adjuster which adjusts an amplitude of the feedback RF signal, during a period during which the switch is turned on, and a phase adjuster which adjusts a phase of the local signal, during the period during which the switch is turned on.
摘要:
A radio transmitter including a combiner which combines input I/Q signals with feedback I/Q signals, a power amplifier which amplifies the quadrature modulated signal, a detector which detects amplitude and phase differences between the input and feedback I/Q signals, a switch to turn on and off the feedback I/Q signals, a generator to generate control signals which minimizes the amplitude difference and the phase difference, in a state where a transmission power is set, during for a period during which the switch is turned off, an amplitude adjuster which adjusts an amplitude of the feedback RF signal, during a period during which the switch is turned on, and a phase adjuster which adjusts a phase of the local signal, during the period during which the switch is turned on.
摘要:
A MOS resistance controlling device includes: a plurality of MOS transistors having a first MOS transistor to N-th (the integer N is larger than 1) MOS transistor being serially connected, the source of the first MOS transistor being set to a first reference potential, the drain the N-th MOS transistor being set to a second reference potential, and the drain of an I-th MOS transistor being connected to the source of an I+1-th MOS transistor, where I is an integer from 1 to N−1; a current source which is electrically disposed at connection node between the drain of the N-th MOS transistors and the second reference potential; and an operational amplifier having a first input terminal being supplied with a third reference potential, a second input terminal connected with the connection node and an output terminal being connected with gates of the MOS transistors.
摘要:
An amplifier circuit according to the present invention comprises: a first differential amplifier circuit including a first transistor having a gate terminal forming a first input node, a second transistor having a gate terminal forming a second input node and having a dimensional ratio with respect to the first transistor of K:M (where K>M), and a first current source that supplies a first current to a source terminal of the first transistor and a source terminal of the second transistor; a second differential amplifier circuit including a third transistor having a gate terminal forming a third input node, a fourth transistor having a gate terminal forming a fourth input node and having a dimensional ratio with respect to the third transistor of M:K, and a second current source that supplies a second current to a source terminal of the third transistor and a source terminal of the fourth transistor, the second differential amplifier circuit having a same gain as the first differential amplifier circuit; and a third differential amplifier circuit including a fifth transistor having a gate terminal forming a fifth input node, a sixth transistor having a gate terminal forming a sixth input node and having a dimensional ratio with respect to the fifth transistor of 1:1, and a variable current source that supplies a third current to a source terminal of the fifth transistor and a source terminal of the sixth transistor, wherein the third differential amplifier circuit combines the third current and the fifth transistor so that a gain of the third differential amplifier circuit is greater than a gain of the first differential amplifier circuit when the third current is a first magnitude, and the gain of the third differential amplifier circuit is lower than the gain of the first differential amplifier circuit when the third current is a second magnitude that differs from the first magnitude.
摘要:
An amplifier circuit according to the present invention comprises: a first differential amplifier circuit including a first transistor having a gate terminal forming a first input node, a second transistor having a gate terminal forming a second input node and having a dimensional ratio with respect to the first transistor of K:M (where K>M), and a first current source that supplies a first current to a source terminal of the first transistor and a source terminal of the second transistor; a second differential amplifier circuit including a third transistor having a gate terminal forming a third input node, a fourth transistor having a gate terminal forming a fourth input node and having a dimensional ratio with respect to the third transistor of M:K, and a second current source that supplies a second current to a source terminal of the third transistor and a source terminal of the fourth transistor, the second differential amplifier circuit having a same gain as the first differential amplifier circuit; and a third differential amplifier circuit including a fifth transistor having a gate terminal forming a fifth input node, a sixth transistor having a gate terminal forming a sixth input node and having a dimensional ratio with respect to the fifth transistor of 1:1, and a variable current source that supplies a third current to a source terminal of the fifth transistor and a source terminal of the sixth transistor, wherein the third differential amplifier circuit combines the third current and the fifth transistor so that a gain of the third differential amplifier circuit is greater than a gain of the first differential amplifier circuit when the third current is a first magnitude, and the gain of the third differential amplifier circuit is lower than the gain of the first differential amplifier circuit when the third current is a second magnitude that differs from the first magnitude.
摘要:
A power amplifier includes amplifier elements to amplify input signals of different frequencies. The amplifier also includes a power supply circuit that includes a common power supply path including an end connected to a power supply input terminal connected to a DC power supply. The amplifier further includes individual power supply paths each including an end connected to the other end of the common power supply path, and the other end connected to the main electrode of a corresponding one of the amplifier elements. The individual power supply paths have different impedances.
摘要:
To provide a conductive particle, containing: a core particle; and a conductive layer formed on a surface of the core particle, wherein the core particle is a nickel particle, and wherein the conductive layer is a nickel plating layer a surface of which has a phosphorous concentration of 10% by mass or lower, and the conductive layer has an average thickness of 1 nm to 10 nm.
摘要:
To provide a conductive particle, containing: a core particle; and a conductive layer formed on a surface of the core particle, wherein the core particle is a nickel particle, and wherein the conductive layer is a nickel plating layer a surface of which has a phosphorous concentration of 10% by mass or lower, and the conductive layer has an average thickness of 1 nm to 10 nm.