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15 条记录 (耗时 0.023 秒)

    Etching system
    3.
    发明授权
    Etching system 有权
    蚀刻系统

    公开(公告)号：US07803246B2

    公开(公告)日：2010-09-28

    申请号：US11695629

    申请日：2007-04-03

    申请人： Tu-Yen Huang ,  Yi-Hong Chen ,  Ta Chin Lee ,  Shang-Sheng Wu ,  Chiun-Tong Su

    发明人： Tu-Yen Huang ,  Yi-Hong Chen ,  Ta Chin Lee ,  Shang-Sheng Wu ,  Chiun-Tong Su

    IPC分类号： H01L21/306 ,  C23F1/00

    CPC分类号： H01J37/32642 ,  H01J37/32091

    摘要： An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etching chamber and opposite the top RF electrode. The etching process gas is transformed into plasma by operation of the top and bottom RF electrodes. An exhaust pump is connected to the exhaust port, expelling the plasma from the etching chamber. A base is disposed in the etching chamber. A focus ring is disposed on the base, accommodating a wafer. The wafer is etched by the plasma. A barricade is disposed on the focus ring and corresponds to the exhaust port, regulating the plasma flowing through the wafer.

    摘要翻译： 蚀刻系统。 蚀刻室包括排气口。 气体输入管连接到蚀刻室，输入蚀刻处理气体。 顶部RF电极设置在蚀刻室上方。 底部RF电极设置在蚀刻室下方并与顶部RF电极相对。 通过顶部和底部RF电极的操作将蚀刻工艺气体转变成等离子体。 排气泵连接到排气口，从蚀刻室排出等离子体。 基底设置在蚀刻室中。 焦点环设置在基座上，容纳晶片。 晶片被等离子体蚀刻。 路障设置在聚焦环上，对应于排气口，调节流经晶片的等离子体。

    Electrical data recording and retrieval based on impedance variation
    4.
    发明授权
    Electrical data recording and retrieval based on impedance variation 失效
    基于阻抗变化的电气数据记录和检索

    公开(公告)号：US5323377A

    公开(公告)日：1994-06-21

    申请号：US982616

    申请日：1992-11-27

    申请人： Zhi Q. Chen ,  Yi-Hong Chen

    发明人： Zhi Q. Chen ,  Yi-Hong Chen

    IPC分类号： G11B9/00 ,  G11B9/04 ,  G11B11/08 ,  H04R23/00

    CPC分类号： B82Y10/00 ,  G11B11/08 ,  G11B9/04 ,  G11B9/1418 ,  H04R23/006

    摘要： Electrical data is recorded and retrieved by producing and detecting impedance change. A layer of high resistivity material on a conductive substrate is used as the recording layer. A conductive probe pressing on it is used for sending writing or reading electrical current flowing in a direction normal to its surface. A large enough electrical voltage pulse is applied on this probe, causing electro-forming in a data spot in the recording layer under the probe, turning the local resistance of this data spot from high to low. This change in resistance or more generally, change in impedance, is utilized to write data. Several kinds of impedance detecting circuits, utilizing the principle of voltage divider circuit or field effect transistors are employed in data reading. A large number of writing/reading units can be integrated compactly.

    摘要翻译： 通过产生和检测阻抗变化来记录和检索电气数据。 作为记录层，使用导电性基板上的高电阻率材料层。 按下导电探头用于发送写入或读取沿垂直于其表面的方向流动的电流。 在该探针上施加足够大的电压脉冲，使得在探针下方的记录层中的数据点中电成像，将该数据点的局部电阻从高转化为低。 利用这种电阻变化或更一般地，阻抗的变化来写入数据。 在数据读取中采用利用分压电路或场效应晶体管原理的几种阻抗检测电路。 大量的写/读单元可以紧凑集成。

    ETCHING SYSTEM
    6.
    发明申请
    ETCHING SYSTEM 有权
    蚀刻系统

    公开(公告)号：US20080245479A1

    公开(公告)日：2008-10-09

    申请号：US11695629

    申请日：2007-04-03

    申请人： Tu-Yen Huang ,  Yi-Hong Chen ,  Ta Chin Lee ,  Shang-Sheng Wu ,  Chiun-Tong Su

    发明人： Tu-Yen Huang ,  Yi-Hong Chen ,  Ta Chin Lee ,  Shang-Sheng Wu ,  Chiun-Tong Su

    IPC分类号： H01L21/306

    CPC分类号： H01J37/32642 ,  H01J37/32091

    摘要： An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etching chamber and opposite the top RF electrode. The etching process gas is transformed into plasma by operation of the top and bottom RF electrodes. An exhaust pump is connected to the exhaust port, expelling the plasma from the etching chamber. A base is disposed in the etching chamber. A focus ring is disposed on the base, accommodating a wafer. The wafer is etched by the plasma. A barricade is disposed on the focus ring and corresponds to the exhaust port, regulating the plasma flowing through the wafer.

    摘要翻译： 蚀刻系统。 蚀刻室包括排气口。 气体输入管连接到蚀刻室，输入蚀刻处理气体。 顶部RF电极设置在蚀刻室上方。 底部RF电极设置在蚀刻室下方并与顶部RF电极相对。 通过顶部和底部RF电极的操作将蚀刻工艺气体转变成等离子体。 排气泵连接到排气口，从蚀刻室排出等离子体。 基底设置在蚀刻室中。 焦点环设置在基座上，容纳晶片。 晶片被等离子体蚀刻。 路障设置在聚焦环上，对应于排气口，调节流经晶片的等离子体。

    Etching System
    8.
    发明申请
    Etching System 有权
    蚀刻系统

    公开(公告)号：US20100314047A1

    公开(公告)日：2010-12-16

    申请号：US12859541

    申请日：2010-08-19

    申请人： Tu-Yen Huang ,  Yi-Hong Chen ,  Ta Chin Lee ,  Shang-Sheng Wu ,  Chiun-Tong Su

    发明人： Tu-Yen Huang ,  Yi-Hong Chen ,  Ta Chin Lee ,  Shang-Sheng Wu ,  Chiun-Tong Su

    IPC分类号： C23F1/08

    CPC分类号： H01J37/32642 ,  H01J37/32091

    摘要： An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etching chamber and opposite the top RF electrode. The etching process gas is transformed into plasma by operation of the top and bottom RF electrodes. An exhaust pump is connected to the exhaust port, expelling the plasma from the etching chamber. A base is disposed in the etching chamber. A focus ring is disposed on the base, accommodating a wafer. The wafer is etched by the plasma. A barricade is disposed on the focus ring and corresponds to the exhaust port, regulating the plasma flowing through the wafer.

    摘要翻译： 蚀刻系统。 蚀刻室包括排气口。 气体输入管连接到蚀刻室，输入蚀刻处理气体。 顶部RF电极设置在蚀刻室上方。 底部RF电极设置在蚀刻室下方并与顶部RF电极相对。 通过顶部和底部RF电极的操作将蚀刻工艺气体转变成等离子体。 排气泵连接到排气口，从蚀刻室排出等离子体。 基底设置在蚀刻室中。 焦点环设置在基座上，容纳晶片。 晶片被等离子体蚀刻。 路障设置在聚焦环上，对应于排气口，调节流经晶片的等离子体。