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公开(公告)号：US20050145897A1
公开(公告)日：2005-07-07
申请号：US11008276
申请日：2004-12-10
IPC分类号： H01L21/28 , H01L21/285 , H01L21/304 , H01L21/318 , H01L21/336 , H01L21/768 , H01L21/8238 , H01L23/522 , H01L27/092 , H01L29/417 , H01L29/78 , H01L21/3205 , H01L29/76 , H01L31/062
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76832 , H01L21/76834 , H01L21/823814 , H01L21/823835 , H01L21/823842 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7842
摘要： A method of manufacture of a semiconductor device includes forming a gate insulating film and a gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSi2 layer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.
摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成栅极绝缘膜和由多晶硅制成的栅电极; 将离子注入到半导体衬底中以形成作为源极或漏极的半导体区域; 在所述半导体衬底上形成钴膜和氮化钛膜以覆盖所述栅电极; 进行退火以引起Co和Si之间的反应以及半导体区域以形成CoSi层; 进行湿式清洗以除去氮化钛膜和未反应的钴膜，使CoSi层离开栅电极和半导体区域; 进行退火以引起CoSi层和栅极电极和半导体区域之间的反应以形成CoSi 2 O 3层; 进行HPM清洗; 以及通过低压CVD在半导体衬底上形成氮化硅膜以覆盖栅电极。
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公开(公告)号：US20080142901A1
公开(公告)日：2008-06-19
申请号：US12028593
申请日：2008-02-08
IPC分类号： H01L27/088
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76832 , H01L21/76834 , H01L21/823814 , H01L21/823835 , H01L21/823842 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7842
摘要： A method of manufacture of a semiconductor device includes forming a gate insulating film and gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSi2 layer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.
摘要翻译： 半导体器件的制造方法包括在半导体衬底上形成栅极绝缘膜和由多晶硅制成的栅电极; 将离子注入到半导体衬底中以形成作为源极或漏极的半导体区域; 在所述半导体衬底上形成钴膜和氮化钛膜以覆盖所述栅电极; 进行退火以引起Co和Si之间的反应以及半导体区域以形成CoSi层; 进行湿式清洗以除去氮化钛膜和未反应的钴膜，使CoSi层离开栅电极和半导体区域; 进行退火以引起CoSi层与栅极电极和半导体区域之间的反应以形成CoSi 2层; 进行HPM清洗; 以及通过低压CVD在半导体衬底上形成氮化硅膜以覆盖栅电极。
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公开(公告)号：US07666728B2
公开(公告)日：2010-02-23
申请号：US12028593
申请日：2008-02-08
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/3205 , H01L21/4763 , H01L21/302
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76832 , H01L21/76834 , H01L21/823814 , H01L21/823835 , H01L21/823842 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7842
摘要： A method of manufacture of a semiconductor device includes forming a gate insulating film and gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSi2 layer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.
摘要翻译： 半导体器件的制造方法包括在半导体衬底上形成栅极绝缘膜和由多晶硅制成的栅电极; 将离子注入到半导体衬底中以形成作为源极或漏极的半导体区域; 在所述半导体衬底上形成钴膜和氮化钛膜以覆盖所述栅电极; 进行退火以引起Co和Si之间的反应以及半导体区域以形成CoSi层; 进行湿式清洗以除去氮化钛膜和未反应的钴膜，使CoSi层离开栅电极和半导体区域; 进行退火以引起CoSi层与栅极电极和半导体区域之间的反应以形成CoSi 2层; 进行HPM清洗; 以及通过低压CVD在半导体衬底上形成氮化硅膜以覆盖栅电极。
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公开(公告)号：US07348230B2
公开(公告)日：2008-03-25
申请号：US11008276
申请日：2004-12-10
IPC分类号： H01L21/336
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76832 , H01L21/76834 , H01L21/823814 , H01L21/823835 , H01L21/823842 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7842
摘要： A method of manufacture of a semiconductor device includes forming a gate insulating film and a gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSi2 layer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.
摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成栅极绝缘膜和由多晶硅制成的栅电极; 将离子注入到半导体衬底中以形成作为源极或漏极的半导体区域; 在所述半导体衬底上形成钴膜和氮化钛膜以覆盖所述栅电极; 进行退火以引起Co和Si之间的反应以及半导体区域以形成CoSi层; 进行湿式清洗以除去氮化钛膜和未反应的钴膜，使CoSi层离开栅极电极和半导体区域; 进行退火以引起CoSi层和栅极电极和半导体区域之间的反应以形成CoSi 2 O 3层; 进行HPM清洗; 以及通过低压CVD在半导体衬底上形成氮化硅膜以覆盖栅电极。
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公开(公告)号：US07132341B2
公开(公告)日：2006-11-07
申请号：US09974814
申请日：2001-10-12
申请人： Masashi Sahara , Fumiaki Endo , Masanori Kojima , Katsuhiro Uchimura , Hideaki Kanazawa , Masakazu Sugiura
发明人： Masashi Sahara , Fumiaki Endo , Masanori Kojima , Katsuhiro Uchimura , Hideaki Kanazawa , Masakazu Sugiura
IPC分类号： H01L21/336 , H01L21/44
CPC分类号： H01L29/665 , G11C11/412 , H01L21/2633 , H01L21/28052 , H01L21/28518 , H01L21/32132 , H01L27/11 , H01L27/1104
摘要： In a high-performance semiconductor integrated circuit, the standby current is reduced by preventing current leakage in a semiconductor integrated circuit device, for example, the memory cell of an SRAM. A gate electrode G is formed on semiconductor substrate 1 and n+-type semiconductor regions 17 (source/drain regions) are formed in the semiconductor substrate on both sides of this gate electrode. Within the same apparatus and under near-vacuum conditions, a depth of 2.5 nm or less is etched away from the surfaces of the source/drain regions and gate electrode, a film of Co is then formed on the source/drain regions, and thermal processing is applied to form CoSi2 layer 19a. As a result, current leakage in the memory cell can be prevented and this method can be applied to semiconductor integrated circuit devices that have low current consumption or are battery-driven.
摘要翻译： 在高性能半导体集成电路中，通过防止半导体集成电路器件例如SRAM的存储单元中的电流泄漏来降低待机电流。 栅电极G形成在半导体衬底1上，并且在该栅电极两侧的半导体衬底中形成n + +型半导体区17（源/漏区）。 在相同的装置内和在近真空条件下，从源极/漏极区域和栅极电极的表面蚀刻2.5nm或更小的深度，然后在源极/漏极区域上形成Co膜，并且热源 施加处理以形成CoSi 2层19a。 结果，可以防止存储单元中的电流泄漏，并且该方法可以应用于具有低电流消耗或电池驱动的半导体集成电路器件。
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公开(公告)号：US07709982B2
公开(公告)日：2010-05-04
申请号：US12180053
申请日：2008-07-25
申请人： Takuya Ohuchi , Shigeo Omori , Hiroshi Oyama , Katsuhiro Uchimura
发明人： Takuya Ohuchi , Shigeo Omori , Hiroshi Oyama , Katsuhiro Uchimura
IPC分类号： H02K7/00
摘要： A brushless motor has a first coupler that includes a molded body with an annular member and a plug integrally combined with a peripheral side wall of the annular member. The plug houses terminal rods therein. Bridges project radially inward from an inner peripheral wall surface of the annular member. Connectors joined to respective leads that extend from an electromagnetic coil are mounted on radial inner ends of the bridges. The bridges axe provided in pairs of adjacent bridges. In each of such pairs, the bridges project in parallel with each other from an inner peripheral wall surface of the annular member.
摘要翻译： 无刷电动机具有第一耦合器，该第一耦合器包括具有环形构件的模制体和与环形构件的周边侧壁一体组合的插头。 插头上装有端子棒。 桥梁从环形构件的内周壁表面径向向内突出。 连接到从电磁线圈延伸的各引线的连接器安装在桥的径向内端。 桥梁提供成对的相邻桥梁。 在这些对中的每一对中，桥从环形构件的内周壁表面彼此平行地突出。
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