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公开(公告)号：US20080142901A1
公开(公告)日：2008-06-19
申请号：US12028593
申请日：2008-02-08
IPC分类号： H01L27/088
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76832 , H01L21/76834 , H01L21/823814 , H01L21/823835 , H01L21/823842 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7842
摘要： A method of manufacture of a semiconductor device includes forming a gate insulating film and gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSi2 layer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.
摘要翻译： 半导体器件的制造方法包括在半导体衬底上形成栅极绝缘膜和由多晶硅制成的栅电极; 将离子注入到半导体衬底中以形成作为源极或漏极的半导体区域; 在所述半导体衬底上形成钴膜和氮化钛膜以覆盖所述栅电极; 进行退火以引起Co和Si之间的反应以及半导体区域以形成CoSi层; 进行湿式清洗以除去氮化钛膜和未反应的钴膜，使CoSi层离开栅电极和半导体区域; 进行退火以引起CoSi层与栅极电极和半导体区域之间的反应以形成CoSi 2层; 进行HPM清洗; 以及通过低压CVD在半导体衬底上形成氮化硅膜以覆盖栅电极。
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公开(公告)号：US20070052095A1
公开(公告)日：2007-03-08
申请号：US11514873
申请日：2006-09-05
申请人： Katsuhiro Torii , Shuji Matsuo
发明人： Katsuhiro Torii , Shuji Matsuo
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L23/5226 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/02311 , H01L2224/02331 , H01L2224/0346 , H01L2224/0401 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/05082 , H01L2224/05147 , H01L2224/05155 , H01L2224/05548 , H01L2224/05567 , H01L2224/05569 , H01L2224/05571 , H01L2224/05644 , H01L2224/1132 , H01L2224/13022 , H01L2224/13024 , H01L2224/13111 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/1306 , H01L2224/131 , H01L2924/00014 , H01L2924/00
摘要： Provided is a technology capable of improving the reliability of a semiconductor device using WPP by preventing a short-circuit failure between uppermost-level interconnects. In the present invention, a buffer layer is formed between an uppermost-level interconnect and redistribution interconnect. The uppermost-level interconnect is made of a copper film, while the buffer layer is made of an aluminum film. The redistribution interconnect is made of a film stack of a copper film and a nickel film. In such a semiconductor device, stress concentration occurs at a triple point when temperature cycling between low temperature and high temperature is performed. The stress concentration on the triple point is relaxed by the presence of the buffer layer, whereby the conduction of the stress to an interface just below the triple point can be suppressed. Peeling due to the stress at the interface can thus be prevented.
摘要翻译： 提供了一种能够通过防止最上层互连之间的短路故障来提高使用WPP的半导体器件的可靠性的技术。 在本发明中，在最上层的互连和再分配互连之间形成缓冲层。 最上层的互连由铜膜制成，而缓冲层由铝膜制成。 再分布互连由铜膜和镍膜的膜叠层制成。 在这样的半导体装置中，当进行低温和高温的温度循环时，应力集中发生在三点。 通过缓冲层的存在，使三重点上的应力集中变得松弛，从而可以抑制应力传导到刚好低于三重点的界面。 因此可以防止由于界面处的应力而产生的剥离。
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公开(公告)号：US08439508B2
公开(公告)日：2013-05-14
申请号：US12623019
申请日：2009-11-20
IPC分类号： G03B21/14
摘要： A projector that projects an image on a screen, includes: plural image generating units that generate an image lights representing the image; a main body housing that houses the plural image generating units; and plural projection optical units that are provided in the main body housing to respectively correspond to the plural image generating units and project the image lights generated by the image generating units on the screen.
摘要翻译： 一种将图像投影在屏幕上的投影仪，包括：多个图像生成单元，其生成表示图像的图像光; 容纳多个图像生成单元的主体壳体; 以及多个投影光学单元，其设置在主体外壳中，以分别对应于多个图像生成单元，并且将由图像生成单元生成的图像光投射到屏幕上。
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公开(公告)号：US20050145897A1
公开(公告)日：2005-07-07
申请号：US11008276
申请日：2004-12-10
IPC分类号： H01L21/28 , H01L21/285 , H01L21/304 , H01L21/318 , H01L21/336 , H01L21/768 , H01L21/8238 , H01L23/522 , H01L27/092 , H01L29/417 , H01L29/78 , H01L21/3205 , H01L29/76 , H01L31/062
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76832 , H01L21/76834 , H01L21/823814 , H01L21/823835 , H01L21/823842 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7842
摘要： A method of manufacture of a semiconductor device includes forming a gate insulating film and a gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSi2 layer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.
摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成栅极绝缘膜和由多晶硅制成的栅电极; 将离子注入到半导体衬底中以形成作为源极或漏极的半导体区域; 在所述半导体衬底上形成钴膜和氮化钛膜以覆盖所述栅电极; 进行退火以引起Co和Si之间的反应以及半导体区域以形成CoSi层; 进行湿式清洗以除去氮化钛膜和未反应的钴膜，使CoSi层离开栅电极和半导体区域; 进行退火以引起CoSi层和栅极电极和半导体区域之间的反应以形成CoSi 2 O 3层; 进行HPM清洗; 以及通过低压CVD在半导体衬底上形成氮化硅膜以覆盖栅电极。
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公开(公告)号：US20100128228A1
公开(公告)日：2010-05-27
申请号：US12623019
申请日：2009-11-20
摘要： A projector that projects an image on a screen, includes: plural image generating units that generate an image lights representing the image; a main body housing that houses the plural image generating units; and plural projection optical units that are provided in the main body housing to respectively correspond to the plural image generating units and project the image lights generated by the image generating units on the screen.
摘要翻译： 一种将图像投影在屏幕上的投影仪，包括：多个图像生成单元，其生成表示图像的图像光; 容纳多个图像生成单元的主体壳体; 以及多个投影光学单元，其设置在主体外壳中，以分别对应于多个图像生成单元，并且将由图像生成单元生成的图像光投射到屏幕上。
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公开(公告)号：US07666728B2
公开(公告)日：2010-02-23
申请号：US12028593
申请日：2008-02-08
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/3205 , H01L21/4763 , H01L21/302
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76832 , H01L21/76834 , H01L21/823814 , H01L21/823835 , H01L21/823842 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7842
摘要： A method of manufacture of a semiconductor device includes forming a gate insulating film and gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSi2 layer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.
摘要翻译： 半导体器件的制造方法包括在半导体衬底上形成栅极绝缘膜和由多晶硅制成的栅电极; 将离子注入到半导体衬底中以形成作为源极或漏极的半导体区域; 在所述半导体衬底上形成钴膜和氮化钛膜以覆盖所述栅电极; 进行退火以引起Co和Si之间的反应以及半导体区域以形成CoSi层; 进行湿式清洗以除去氮化钛膜和未反应的钴膜，使CoSi层离开栅电极和半导体区域; 进行退火以引起CoSi层与栅极电极和半导体区域之间的反应以形成CoSi 2层; 进行HPM清洗; 以及通过低压CVD在半导体衬底上形成氮化硅膜以覆盖栅电极。
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7.发明申请公开(公告)号：US20100019324A1
公开(公告)日：2010-01-28
申请号：US12519489
申请日：2006-12-22
申请人： Hiroyuki Ohara , Shino Takahashi , Kenji Kanamitsu , Shuji Matsuo
发明人： Hiroyuki Ohara , Shino Takahashi , Kenji Kanamitsu , Shuji Matsuo
IPC分类号： H01L27/092 , H01L21/336 , H01L21/8238
CPC分类号： H01L21/823842 , H01L21/28052 , H01L21/32155 , H01L27/11 , H01L29/4933 , H01L29/665
摘要： By ion-implanting an inert gas, for example, nitrogen into a polycrystalline silicon film in an nMIS forming region from an upper surface of the polycrystalline silicon film down to a predetermined depth, an upper portion of the polycrystalline silicon film is converted to an amorphous form to form an amorphous/polycrystalline silicon film. And then, an n-type impurity, for example, phosphorous is ion-implanted into the amorphous/polycrystalline silicon film to form an n-type amorphous/polycrystalline silicon film, the n-type amorphous/polycrystalline silicon film is processed to form a gate electrode having a gate length shorter than 0.1 μm, a sidewall formed of an insulating film is formed on a side wall of the gate electrode, and a source/drain diffusion layer is formed. Thereafter, a cobalt silicide (CoSi2) layer is formed on an upper portion of the gate electrode by salicide technique.
摘要翻译： 通过将惰性气体例如氮离子注入到从多晶硅膜的上表面到预定深度的nMIS形成区域中的多晶硅膜中，将多晶硅膜的上部转化为无定形 形成非晶/多晶硅膜。 然后，将n型杂质（例如磷）离子注入到非晶/多晶硅膜中以形成n型非晶/多晶硅膜，将n型非晶/多晶硅膜加工形成 栅极长度小于0.1μm的栅电极，在栅电极的侧壁上形成由绝缘膜形成的侧壁，形成源极/漏极扩散层。 此后，通过硅化物技术在栅电极的上部形成硅化钴（CoSi 2）层。
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公开(公告)号：US07348230B2
公开(公告)日：2008-03-25
申请号：US11008276
申请日：2004-12-10
IPC分类号： H01L21/336
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76832 , H01L21/76834 , H01L21/823814 , H01L21/823835 , H01L21/823842 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7842
摘要： A method of manufacture of a semiconductor device includes forming a gate insulating film and a gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSi2 layer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.
摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成栅极绝缘膜和由多晶硅制成的栅电极; 将离子注入到半导体衬底中以形成作为源极或漏极的半导体区域; 在所述半导体衬底上形成钴膜和氮化钛膜以覆盖所述栅电极; 进行退火以引起Co和Si之间的反应以及半导体区域以形成CoSi层; 进行湿式清洗以除去氮化钛膜和未反应的钴膜，使CoSi层离开栅极电极和半导体区域; 进行退火以引起CoSi层和栅极电极和半导体区域之间的反应以形成CoSi 2 O 3层; 进行HPM清洗; 以及通过低压CVD在半导体衬底上形成氮化硅膜以覆盖栅电极。
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9.发明申请公开(公告)号：US20110237036A1
公开(公告)日：2011-09-29
申请号：US13155201
申请日：2011-06-07
申请人： Hiroyuki OHARA , Shino TAKAHASHI , Kenji KANAMITSU , Shuji MATSUO
发明人： Hiroyuki OHARA , Shino TAKAHASHI , Kenji KANAMITSU , Shuji MATSUO
IPC分类号： H01L21/8238 , H01L21/336
CPC分类号： H01L21/823842 , H01L21/28052 , H01L21/32155 , H01L27/11 , H01L29/4933 , H01L29/665
摘要： By ion-implanting an inert gas, for example, nitrogen into a polycrystalline silicon film in an nMIS forming region from an upper surface of the polycrystalline silicon film down to a predetermined depth, an upper portion of the polycrystalline silicon film is converted to an amorphous form to form an amorphous/polycrystalline silicon film. And then, an n-type impurity, for example, phosphorous is ion-implanted into the amorphous/polycrystalline silicon film to form an n-type amorphous/polycrystalline silicon film, the n-type amorphous/polycrystalline silicon film is processed to form a gate electrode having a gate length shorter than 0.1 μm, a sidewall formed of an insulating film is formed on a side wall of the gate electrode, and a source/drain diffusion layer is formed. Thereafter, a cobalt silicide (CoSi2) layer is formed on an upper portion of the gate electrode by salicide technique.
摘要翻译： 通过将惰性气体例如氮离子注入到从多晶硅膜的上表面到预定深度的nMIS形成区域中的多晶硅膜中，将多晶硅膜的上部转化为无定形 形成非晶/多晶硅膜。 然后，将n型杂质（例如磷）离子注入到非晶/多晶硅膜中以形成n型非晶/多晶硅膜，将n型非晶/多晶硅膜加工形成 栅极长度短于0.1μm的栅电极，在栅电极的侧壁上形成由绝缘膜形成的侧壁，形成源极/漏极扩散层。 此后，通过硅化物技术在栅电极的上部形成硅化钴（CoSi 2）层。
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10.发明授权
公开(公告)号：US5052832A
公开(公告)日：1991-10-01
申请号：US378667
申请日：1989-07-12
申请人： Takaaki Akiyama , Shuji Matsuo , Masahiro Fujii , Mitsukazu Kurose , Osamu Nakamura , Masahiro Kamijo
发明人： Takaaki Akiyama , Shuji Matsuo , Masahiro Fujii , Mitsukazu Kurose , Osamu Nakamura , Masahiro Kamijo
摘要： A hand held printer for printing on a print paper when the printer is manually moved over the surface of the paper is provided, including a print mechanism supported within the housing to print inputted characters and drawings on the print paper upon manual manipulation of the housing. A thermal head is movably supported within the housing. A movement measurement unit indicates movement of the printer. A drive roller drives a ribbon take up roller and movement measurement unit. A clutch allows the drive roller to function only in a printing direction. A spring biases the drive roller towards an operating position, the drive roller moving to the print surface independently of the thermal head when the drive roller is biased by the spring.
摘要翻译： 提供了一种用于在打印机被手动地移动到纸张表面上时在打印纸上打印的手持式打印机，其包括支撑在壳体内的打印机构，以便在手动操纵壳体时在打印纸上打印输入的字符和图形。 热敏头可移动地支撑在壳体内。 移动测量单元指示打印机的移动。 驱动辊驱动色带卷取辊和运动测量单元。 离合器允许驱动辊仅在打印方向上起作用。 弹簧将驱动辊偏压到操作位置，当驱动辊被弹簧偏压时，驱动辊独立于热敏头移动到打印表面。
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