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    Method of synthesizing cubic system boron nitride
    1.
    发明授权
    Method of synthesizing cubic system boron nitride 失效
    合成立方氮化硼的方法

    公开(公告)号：US4699687A

    公开(公告)日：1987-10-13

    申请号：US909263

    申请日：1986-09-19

    申请人： Shuji Yazu ,  Hitoshi Sumiya ,  Junji Degawa

    发明人： Shuji Yazu ,  Hitoshi Sumiya ,  Junji Degawa

    IPC分类号： B01J3/06 ,  C30B9/00 ,  C30B29/38

    CPC分类号： C30B9/00 ,  B01J3/062 ,  C30B29/403 ,  B01J2203/061 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/068 ,  Y10S117/90 ,  Y10T117/1096

    摘要： Cubic system boron nitride crystals are synthesized by using a synthesizing vessel separated into a plurality of synthesizing chambers by one or more partition layers. After preparing the synthesizing vessel it is heated under extra-high pressure to achieve a required temperature gradient from chamber to chamber. A plurality of solvents having different eutectic temperatures with respect to boron nitride (BN) sources are placed in the chambers according to the temperature gradient. The BN sources are placed in contact with solvent portions heated to relatively high temperatures. At least one seed crystal is placed in each solvent portion heated to relatively low temperatures. At least one cubic system boron nitride crystal is grown in each of the solvents in the chambers by the above heating of the synthesizing vessel under conditions of ultra-high pressure and temperatures assuring the required temperature gradient.

    摘要翻译： 通过使用通过一个或多个分隔层分离成多个合成室的合成容器来合成立方体系的氮化硼晶体。 在制备合成容器之后，在超高压下加热以达到从室到室所需的温度梯度。 根据温度梯度，将多个相对于氮化硼（BN）源的共晶温度的溶剂放置在室中。 BN源与被加热到较高温度的溶剂部分接触。 在加热到较低温度的每个溶剂部分中放置至少一种晶种。 在超高压和温度条件下，通过合成容器的上述加热，在室内的每种溶剂中生长至少一种立方晶系氮化硼晶体，以确保所需的温度梯度。

    Boron nitride system including an hBN starting material with a catalyst and a sintered cNB body having a high heat conductivity based on the catalyst
    2.
    发明授权
    Boron nitride system including an hBN starting material with a catalyst and a sintered cNB body having a high heat conductivity based on the catalyst 失效
    包括具有催化剂的hBN起始材料和基于催化剂具有高导热性的烧结cBN体的氮化硼系统

    公开(公告)号：US5332629A

    公开(公告)日：1994-07-26

    申请号：US46422

    申请日：1993-04-13

    申请人： Hitoshi Sumiya ,  Shuichi Sato ,  Shuji Yazu

    发明人： Hitoshi Sumiya ,  Shuichi Sato ,  Shuji Yazu

    IPC分类号： C04B35/5831 ,  C04B41/52 ,  C04B41/89 ,  H01L23/373 ,  B32B15/04

    CPC分类号： H01L23/3731 ,  C04B35/5831 ,  C04B41/52 ,  C04B41/89 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/16152 ,  Y10T428/12576 ,  Y10T428/31678

    摘要： A boron nitride system starts with an hBN material and yields a directly converted sintered cBN body having a high heat conductivity within the range of at least 4 W/cm..degree.C. to about 6.2 W/cm..degree.C. For this purpose the hBN starting material of the system has diffused therein an additive of an alkaline earth metal or alkali metal in an amount of from 0.6 mol % to 1.3 mol %. This starting material is directly converted into the cBN at a sintering temperature of at least 1350.degree. C. under a thermodynamically stabilized condition for the cBN, which contains cBN within the range of 99.9 to 99.3 wt. % of the sintered body and a metal remainder from the additive of the starting material within the range of 0.1 to 0.7 wt. % of the sintered body, except for minute naturally occurring components.

    摘要翻译： 氮化硼系统以hBN材料开始，并且产生具有至少4W / cm的范围内的高热导率的直接转化烧结cBN体。 ℃至约6.2W / cm。 为此，系统的hBN原料在其中扩散了0.6mol％至1.3mol％的碱土金属或碱金属的添加剂。 该原料在cBN的热力学稳定条件下，在至少1350℃的烧结温度下直接转化为cBN，其中cBN含量为99.9〜99.3重量％。 ％的烧结体和来自起始材料的添加剂的金属余量在0.1〜0.7重量％的范围内。 ％的烧结体，除了微小的天然成分。