公开(公告)号：US20110263096A1

公开(公告)日：2011-10-27

申请号：US13177584

申请日：2011-07-07

申请人： Hideto OHNUMA ,  Shunpei YAMAZAKI

发明人： Hideto OHNUMA ,  Shunpei YAMAZAKI

IPC分类号： H01L21/265

CPC分类号： H01L21/76254 ,  H01L21/302

摘要： A method is demonstrated to manufacture SOI substrates with high throughput while resources can be effectively used. The present invention is characterized by the feature in which the following process A and process B are repeated. The process A includes irradiation of a surface of a semiconductor wafer with cluster ions to form a separation layer in the semiconductor wafer. The semiconductor wafer and a substrate having an insulating surface are then overlapped with each other and bonded, which is followed by thermal treatment to separate the semiconductor wafer at or around the separation layer. A separation wafer and an SOT substrate which has a crystalline semiconductor layer over the substrate having the insulating surface are simultaneously obtained by the process A. The process B includes treatment of the separation wafer for reusing, which allows the separation wafer to be successively subjected to the process A.

摘要翻译： 一种方法被证明可以制造具有高产量的SOI衬底，同时可以有效地利用资源。 本发明的特征在于重复以下处理A和方法B. 方法A包括用聚簇离子照射半导体晶片的表面以在半导体晶片中形成分离层。 然后将半导体晶片和具有绝缘表面的基板彼此重叠并结合，然后进行热处理以在分离层处或周围分离半导体晶片。 通过方法A同时获得在具有绝缘表面的基板上具有结晶半导体层的分离晶片和SOT基板。工艺B包括处理用于再利用的分离晶片，其允许分离晶片连续地经受 过程A.

公开(公告)号：US20110212596A1

公开(公告)日：2011-09-01

申请号：US13106158

申请日：2011-05-12

申请人： Akihisa SHIMOMURA ,  Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

发明人： Akihisa SHIMOMURA ,  Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2007

摘要： An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere.

摘要翻译： 要公开的本发明的实施例的目的在于，即使通过用激光束照射来修复单晶半导体层的结晶度，也可以防止激光照射中的单晶半导体层中的氧被吸收; 并且在激光照射之前比较激光照射之后，使半导体层中的氧浓度基本相等或降低。 用激光束照射通过接合而设置在基底基板上的单晶半导体层，从而修复单晶半导体层的结晶性。 激光照射在还原气氛或惰性气氛下进行。

公开(公告)号：US20110097872A1

公开(公告)日：2011-04-28

申请号：US12986582

申请日：2011-01-07

申请人： Shunpei YAMAZAKI ,  Hideto OHNUMA

发明人： Shunpei YAMAZAKI ,  Hideto OHNUMA

IPC分类号： H01L21/3105

CPC分类号： H01L21/2007 ,  H01L21/76254

摘要： A first substrate of single-crystal silicon within which is formed an embrittled layer and over a surface of which is formed a first insulating film is provided; a second insulating film is formed over a surface of a second substrate; at least one surface of either the first insulating film or the second insulating film is exposed to a plasma atmosphere or an ion atmosphere, and that surface of the first insulating film or the second insulating film is activated; the first substrate and the second substrate are bonded together with the first insulating film and the second insulating film interposed therebetween; a single-crystal silicon film is separated from the first substrate at an interface of the embrittled layer of the first substrate, and a thin film single-crystal silicon film is formed over the second substrate with the first insulating film and the second insulating film interposed therebetween.

摘要翻译： 提供了单晶硅的第一基板，其中形成有脆化层，并且其表面上形成有第一绝缘膜; 在第二基板的表面上形成第二绝缘膜; 第一绝缘膜或第二绝缘膜的至少一个表面暴露于等离子体气氛或离子气氛中，并且第一绝缘膜或第二绝缘膜的表面被激活; 第一基板和第二基板与第一绝缘膜和第二绝缘膜接合在一起; 在第一衬底的脆化层的界面处将单晶硅膜与第一衬底分离，并且在第二衬底上形成薄膜单晶硅膜，其中第一绝缘膜和第二绝缘膜插入 之间。

公开(公告)号：US20100264421A1

公开(公告)日：2010-10-21

申请号：US12824747

申请日：2010-06-28

申请人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO ,  Hideto OHNUMA

发明人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO ,  Hideto OHNUMA

IPC分类号： H01L33/00

CPC分类号： G02F1/1368 ,  G02F1/133345 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/123 ,  G02F2202/104 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/458 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863 ,  H01L2227/323

摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

摘要翻译： 本发明提供一种具有高操作性能和高可靠性的半导体器件。 在形成驱动电路的n沟道TFT 802中配置与栅极配线重叠的LDD区域707，能够实现高耐热载流子注入的TFT结构。 不与栅极布线重叠的LDD区域717,718,719和720被布置在形成像素单元的n沟道TFT 804中。 结果，实现了具有小的截止电流值的TFT结构。 在这种情况下，属于周期表第15族的元素在LDD区707中比在LDD区717,718,719和720中的浓度更高。

公开(公告)号：US20100151663A1

公开(公告)日：2010-06-17

申请号：US12634107

申请日：2009-12-09

申请人： Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

发明人： Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： When the single crystal semiconductor layer is melted, the outward diffusion of oxygen is promoted. Specifically, an SOI substrate is formed in such a manner that an SOI structure having a bonding layer including oxygen provided over a base substrate and a single crystal semiconductor layer provided over the bonding layer including oxygen is formed, and part of the single crystal semiconductor layer is melted by irradiation with a laser beam in a state that the base substrate is heated at a temperature of higher than or equal to 500° C. and lower than a melting point of the base substrate.

摘要翻译： 当单晶半导体层熔化时，氧的向外扩散被促进。 具体地，形成SOI衬底，其中形成具有设置在基底衬底上的包含氧的结合层的SOI结构和设置在包括氧的接合层上的单晶半导体层，并且部分单晶半导体层 在基底基板在高于或等于500℃且低于基底的熔点的温度下被加热的状态下通过用激光束照射而熔化。

公开(公告)号：US20090098704A1

公开(公告)日：2009-04-16

申请号：US12244073

申请日：2008-10-02

申请人： Hideto OHNUMA ,  Shunpei YAMAZAKI

发明人： Hideto OHNUMA ,  Shunpei YAMAZAKI

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/302

摘要： A method is demonstrated to manufacture SOI substrates with high throughput while resources can be effectively used. The present invention is characterized by the feature in which the following process A and process B are repeated. The process A includes irradiation of a surface of a semiconductor wafer with cluster ions to form a separation layer in the semiconductor wafer. The semiconductor wafer and a substrate having an insulating surface are then overlapped with each other and bonded, which is followed by thermal treatment to separate the semiconductor wafer at or around the separation layer. A separation wafer and an SOI substrate which has a crystalline semiconductor layer over the substrate having the insulating surface are simultaneously obtained by the process A. The process B includes treatment of the separation wafer for reusing, which allows the separation wafer to be successively subjected to the process A.

摘要翻译： 一种方法被证明可以制造具有高产量的SOI衬底，同时可以有效地利用资源。 本发明的特征在于重复以下处理A和方法B. 方法A包括用聚簇离子照射半导体晶片的表面以在半导体晶片中形成分离层。 然后将半导体晶片和具有绝缘表面的基板彼此重叠并结合，然后进行热处理以在分离层处或周围分离半导体晶片。 通过工艺A同时获得在具有绝缘表面的衬底上具有晶体半导体层的分离晶片和SOI衬底。工艺B包括处理用于再利用的分离晶片，其允许分离晶片依次经受 过程A.

公开(公告)号：US20060278875A1

公开(公告)日：2006-12-14

申请号：US11421922

申请日：2006-06-02

申请人： Hideto OHNUMA ,  Shigeharu MONOE ,  Shunpei YAMAZAKI

发明人： Hideto OHNUMA ,  Shigeharu MONOE ,  Shunpei YAMAZAKI

IPC分类号： H01L29/76

CPC分类号： H01L27/1214 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66757 ,  H01L29/78624

摘要： The present invention provides a TFT including at least one LDD region in a self-alignment manner without forming a sidewall spacer and increasing the number of manufacturing steps. A photomask or a reticle provided with an assist pattern that is formed of a diffraction grating pattern or a semi-transmitting film and has a function of reducing light intensity is employed in a photolithography step of forming a gate electrode, an asymmetrical resist pattern having a region with a thick thickness and a region with a thickness thinner than that of the above region on one side is formed, a gate electrode having a stepped portion is formed, and an LDD region is formed in a self-alignment manner by injecting an impurity element to the semiconductor layer through the region with a thin thickness of the gate electrode.

摘要翻译： 本发明提供一种TFT，其以自对准方式提供至少一个LDD区域，而不形成侧壁间隔物并增加制造步骤的数量。 在形成栅电极的光刻步骤中使用具有由衍射光栅图案或半透射膜形成的辅助图案并具有降低光强度的功能的光掩模或掩模版，具有 形成厚度厚的区域和具有比一面上述区域的厚度薄的区域，形成具有台阶部分的栅电极，并且通过注入杂质以自对准方式形成LDD区域 元件通过具有薄的栅电极厚度的区域到半导体层。

公开(公告)号：US20100029058A1

公开(公告)日：2010-02-04

申请号：US12512141

申请日：2009-07-30

申请人： Akihisa SHIMOMURA ,  Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

发明人： Akihisa SHIMOMURA ,  Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2007

摘要： An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere.

摘要翻译： 要公开的本发明的实施例的目的在于，即使通过用激光束照射来修复单晶半导体层的结晶度，也可以防止激光照射中的单晶半导体层中的氧被吸收; 并且在激光照射之前比较激光照射之后，使半导体层中的氧浓度基本相等或降低。 用激光束照射通过接合而设置在基底基板上的单晶半导体层，从而修复单晶半导体层的结晶性。 激光照射在还原气氛或惰性气氛下进行。

公开(公告)号：US20090098739A1

公开(公告)日：2009-04-16

申请号：US12244414

申请日：2008-10-02

申请人： Hideto OHNUMA ,  Takashi SHINGU ,  Tetsuya KAKEHATA ,  Kazutaka KURIKI ,  Shunpei YAMAZAKI

发明人： Hideto OHNUMA ,  Takashi SHINGU ,  Tetsuya KAKEHATA ,  Kazutaka KURIKI ,  Shunpei YAMAZAKI

IPC分类号： H01L21/31

CPC分类号： H01L27/1266 ,  H01L21/2007 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： An object of the present invention is to provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even where a substrate having a low upper temperature limit such as a glass substrate is used. The manufacturing method compromises the steps of preparing a semiconductor substrate provided with a bonding layer formed on a surface thereof and a separation layer formed at a predetermined depth from the surface thereof, bonding the bonding layer to the base substrate having a distortion point of 700° C. or lower so that the semiconductor substrate and the base substrate face each other, and separating a part of the semiconductor substrate at the separation layer by heat treatment in order to form a single-crystal semiconductor layer over the base substrate. In the manufacturing method, a substrate which shrinks isotropically at least by the heat treatment is used as the base substrate.

摘要翻译： 本发明的目的是提供一种制造具有半导体层的SOI衬底的方法，即使在使用诸如玻璃衬底的上限温度低的衬底的情况下也可以使用。 制造方法损害了制备其表面上形成有接合层的半导体衬底和从其表面形成在预定深度的分离层的步骤，将接合层粘合到具有700°的变形点的基底 C.或更低，使得半导体衬底和基底基板彼此面对，并且通过热处理在分离层处分离半导体衬底的一部分，以在基底衬底上形成单晶半导体层。 在制造方法中，使用至少通过热处理各向同性收缩的基板作为基底。

公开(公告)号：US20120164817A1

公开(公告)日：2012-06-28

申请号：US13411864

申请日：2012-03-05

申请人： Takeshi SHICHI ,  Junichi KOEZUKA ,  Hideto OHNUMA ,  Shunpei YAMAZAKI

发明人： Takeshi SHICHI ,  Junichi KOEZUKA ,  Hideto OHNUMA ,  Shunpei YAMAZAKI

IPC分类号： H01L21/46

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： The present invention provides a method for manufacturing an SOI substrate, to improve planarity of a surface of a single crystal semiconductor layer after separation by favorably separating a single crystal semiconductor substrate even in the case where a non-mass-separation type ion irradiation method is used, and to improve planarity of a surface of a single crystal semiconductor layer after separation as well as to improve throughput. The method includes the steps of irradiating a single crystal semiconductor substrate with accelerated ions by an ion doping method while the single crystal semiconductor substrate is cooled to form an embrittled region in the single crystal semiconductor substrate; bonding the single crystal semiconductor substrate and a base substrate with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate along the embrittled region to form a single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween.

摘要翻译： 本发明提供一种制造SOI衬底的方法，即使在非质量分离型离子照射方法为非质子分离型离子照射方法的情况下，通过有利地分离单晶半导体衬底来提高分离后的单晶半导体层的表面的平面性 并且在分离之后提高单晶半导体层的表面的平面性以及提高生产量。 该方法包括以下步骤：当单晶半导体衬底被冷却以在单晶半导体衬底中形成脆化区域时，通过离子掺杂方法照射具有加速离子的单晶半导体衬底; 将单晶半导体衬底和基底衬底之间插入绝缘层; 并且沿着脆化区域分离单晶半导体衬底，以在基底衬底上形成绝缘层，形成单晶半导体层。