公开(公告)号：US20110059562A1

公开(公告)日：2011-03-10

申请号：US12944841

申请日：2010-11-12

申请人： Shunpei YAMAZAKI ,  Sachiaki TEDUKA ,  Satoshi TORIUMI ,  Makoto FURUNO ,  Yasuhiro JINBO ,  Koji DAIRIKI ,  Hideaki KUWABARA

发明人： Shunpei YAMAZAKI ,  Sachiaki TEDUKA ,  Satoshi TORIUMI ,  Makoto FURUNO ,  Yasuhiro JINBO ,  Koji DAIRIKI ,  Hideaki KUWABARA

IPC分类号： H01L21/336

CPC分类号： C23C16/515 ,  C23C16/509 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78696

摘要： An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film.

摘要翻译： 本发明的目的是提供一种在大面积基板上具有优良质量的微晶半导体膜的制造方法。 在栅电极上形成栅极绝缘膜之后，为了提高在初始阶段形成的微晶半导体膜的质量，通过提供具有不同频率的高频功率并且膜的下部附近产生辉光放电等离子体 在第一成膜条件下形成具有栅极绝缘膜的界面，其成膜速率低，但是导致良好的膜质量。 此后，在成膜速度较高的第二成膜条件下沉积膜的上部，并且还在微晶半导体膜上层叠缓冲层。

公开(公告)号：US20090047758A1

公开(公告)日：2009-02-19

申请号：US12186001

申请日：2008-08-05

申请人： Shunpei YAMAZAKI ,  Sachiaki TEDUKA ,  Makoto FURUNO ,  Satoshi TORIUMI ,  Yasuhiro JINBO ,  Koji DAIRIKI

发明人： Shunpei YAMAZAKI ,  Sachiaki TEDUKA ,  Makoto FURUNO ,  Satoshi TORIUMI ,  Yasuhiro JINBO ,  Koji DAIRIKI

IPC分类号： H01L21/336

CPC分类号： H01L29/04 ,  H01L21/0262 ,  H01L27/1222 ,  H01L27/127 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78696

摘要： In a case of forming a bottom-gate thin film transistor, a step of forming a microcrystalline semiconductor film over a gate insulating film by a plasma CVD method, and a step of forming an amorphous semiconductor film over the microcrystalline semiconductor film are performed. In the step of forming the microcrystalline semiconductor film, the pressure in the reaction chamber is set at or below 10−5 Pa once, the substrate temperature is set in the range of 120° C. to 220° C., plasma is generated by introducing hydrogen and a silicon gas, hydrogen plasma is made to act on a reaction product formed on a surface of the gate insulating film to perform removal while performing film formation. Moreover, the plasma is generated by applying a first high-frequency electric power of an HF band a second high-frequency electric power of a VHF band superimposed on each other.

摘要翻译： 在形成底栅极薄膜晶体管的情况下，进行通过等离子体CVD法在栅极绝缘膜上形成微晶半导体膜的步骤，以及在微晶半导体膜上形成非晶半导体膜的步骤。 在形成微晶半导体膜的步骤中，反应室中的压力设定为10-5Pa以下，基板温度设定在120℃〜220℃的范围内，等离子体由 引入氢气和硅气体，使氢等离子体作用于形成在栅极绝缘膜的表面上的反应产物，以在进行成膜的同时进行除去。 此外，通过施加VHF频带的第一高频电力，VHF频带的第二高频电力彼此叠加而产生等离子体。