公开(公告)号：US06613614B2

公开(公告)日：2003-09-02

申请号：US10101830

申请日：2002-03-21

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

IPC分类号： H01L2184

CPC分类号： H01L29/66757 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78621

摘要： A TFT using an aluminum material for a gate electrode is manufactured at a high yield factor. The gate electrode provided over an active layer and a gate insulating film is constituted by a lamination film of a tantalum layer and an aluminum layer. In this structure, the tantalum layer functions as a stopper, so that it is possible to prevent a constituent material of the aluminum layer from intruding into the gate insulating film. An end portion of the tantalum layer is transformed into tantalum oxide, which has an effect to lower damage at ion implantation to the gate insulating film in the formation of an LDD region.

公开(公告)号：US06369410B1

公开(公告)日：2002-04-09

申请号：US09210781

申请日：1998-12-15

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

IPC分类号： H01L2949

CPC分类号： H01L29/66757 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78621

摘要： A TFT using an aluminum material for a gate electrode is manufactured at a high yield factor. The gate electrode provided over an active layer and a gate insulating film is constituted by a lamination film of a tantalum layer and an aluminum layer. In this structure, the tantalum layer functions as a stopper, so that it is possible to prevent a constituent material of the aluminum layer from intruding into the gate insulating film. An end portion of the tantalum layer is transformed into tantalum oxide, which has an effect to lower damage at ion implantation to the gate insulating film in the formation of an LDD region.

公开(公告)号：US06893503B1

公开(公告)日：2005-05-17

申请号：US09050182

申请日：1998-03-26

申请人： Hideto Ohnuma ,  Shunpei Yamazaki ,  Setsuo Nakajima ,  Hisashi Ohtani

发明人： Hideto Ohnuma ,  Shunpei Yamazaki ,  Setsuo Nakajima ,  Hisashi Ohtani

IPC分类号： C30B25/04 ,  H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678

摘要： A method of producing a semiconductor device which removes catalyst elements from a silicon-containing semiconductor film while maintaining the advantage of low temperature process is provided. The method comprises the steps of: forming an amorphous semiconductor film containing silicon on a glass substrate to crystallize it by using a catalyst element; selectively introducing into the amorphous semiconductor film an impurity belonging to Group 15 to form gettering regions and regions to be gettered; and causing the catalyst element in the silicon film to move to the gettering regions by heat treatment. Through the gettering process, the crystalline silicon film can be obtained in which the concentration of nickel contained therein is sufficiently reduced.

摘要翻译： 提供一种制造半导体器件的方法，该半导体器件在保持低温工艺的优点的同时从含硅半导体膜中除去催化剂元件。 该方法包括以下步骤：在玻璃基板上形成含硅的非晶半导体膜，通过使用催化剂元素使其结晶化; 选择性地向非晶半导体膜引入属于第15族的杂质，以形成吸收区域和被吸收的区域; 并通过热处理使硅膜中的催化剂元素移动到吸气区域。 通过吸气工艺，可以获得其中含有的镍的浓度充分降低的结晶硅膜。

公开(公告)号：US06461943B1

公开(公告)日：2002-10-08

申请号：US09707348

申请日：2000-11-06

申请人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Tamae Takano ,  Hisashi Ohtani

发明人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Tamae Takano ,  Hisashi Ohtani

IPC分类号： H01L21322

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621

摘要： To provide a method of removing a catalyst element from a crystalline silicon film obtained by solid phase growth using the catalyst element promoting crystallization, phosphorus is implanted selectively to the crystalline silicon film having the catalyst element whereby a portion of the silicon film implanted with phosphorus is made amorphous, and when a thermal annealing treatment is performed and the silicon film is heated, the catalyst element is moved to an amorphous portion implanted with phosphorus having large gettering capacity by which the concentration of the catalyst element in the silicon film is lowered and a semiconductor device is fabricated by using the silicon film.

摘要翻译： 为了提供一种使用催化剂元素促进结晶从固相生长获得的结晶硅膜中除去催化剂元素的方法，磷选择性地注入到具有催化剂元素的结晶硅膜上，从而一部分注入磷的硅膜为 并且当进行热退火处理并且硅膜被加热时，催化剂元件移动到注入具有大的吸气能力的磷的非晶部分中，硅膜中的催化剂元素的浓度降低，并且 通过使用硅膜制造半导体器件。

公开(公告)号：US06433363B1

公开(公告)日：2002-08-13

申请号：US09030727

申请日：1998-02-23

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma ,  Satoshi Teramoto

IPC分类号： H01L2976

CPC分类号： H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78621

摘要： Regions 221-224 to become source and drain regions are doped with phosphorus and a heat treatment is then performed, whereby a metal element is moved, with priority, from regions 227-230 to the regions 221-224. Low-concentration impurity regions are thereafter formed in the regions 227-230. As a result, variations in the characteristics of TFTs can be reduced and their reliability can be improved.

摘要翻译： 用磷掺杂成为源区和漏区的区221-224，然后进行热处理，从而金属元素优先从区227-230移动到区221-224。 此后在区域227-230中形成低浓度杂质区。 结果，可以降低TFT的特性的变化并提高其可靠性。

公开(公告)号：US07115452B2

公开(公告)日：2006-10-03

申请号：US10265181

申请日：2002-10-04

申请人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Tamae Takano ,  Hisashi Ohtani

发明人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Tamae Takano ,  Hisashi Ohtani

IPC分类号： H01L21/84

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621

摘要： To provide a method of removing a catalyst element from a crystalline silicon film obtained by solid phase growth using the catalyst element promoting crystallization, phosphorus is implanted selectively to the crystalline silicon film having the catalyst element whereby a portion of the silicon film implanted with phosphorus is made amorphous, and when a thermal annealing treatment is performed and the silicon film is heated, the catalyst element is moved to an amorphous portion implanted with phosphorus having large getting capacity by which the concentration of the catalyst element in the silicon film is lowered and a semiconductor device is fabricated by using the silicon film.

公开(公告)号：US06524896B1

公开(公告)日：2003-02-25

申请号：US09617105

申请日：2000-07-14

申请人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Tamae Takano ,  Hisashi Ohtani

发明人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Tamae Takano ,  Hisashi Ohtani

IPC分类号： H01L2100

CPC分类号： G02B27/017 ,  G02B5/30 ,  G02B2027/0138 ,  G02F1/13454 ,  H01L27/1255 ,  H01L27/1277 ,  H01L29/66757

摘要： There are disclosed techniques for providing a simplified process sequence for fabricating a semiconductor device. The sequence starts with forming an amorphous film containing silicon. Then, an insulating film having openings is formed on the amorphous film. A catalytic element is introduced through the openings to effect crystallization. Thereafter, a window is formed in the insulating film, and P ions are implanted. This process step forms two kinds of regions simultaneously (i.e., gettering regions for gettering the catalytic element and regions that will become the lower electrode of each auxiliary capacitor later).

摘要翻译： 公开了用于提供用于制造半导体器件的简化工艺顺序的技术。 该顺序开始于形成含硅的非晶膜。 然后，在非晶膜上形成具有开口的绝缘膜。 通过开口引入催化元素以进行结晶。 此后，在绝缘膜中形成窗口，并注入P离子。 该工艺步骤同时形成两种区域（即，用于吸收催化元素的吸气区域和稍后将成为每个辅助电容器的下电极的区域）。

公开(公告)号：US20070032049A1

公开(公告)日：2007-02-08

申请号：US11580938

申请日：2006-10-16

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Hideto Ohnuma ,  Tamae Takano ,  Kenji Kasahara ,  Koji Dairiki

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Hideto Ohnuma ,  Tamae Takano ,  Kenji Kasahara ,  Koji Dairiki

IPC分类号： H01L21/20

CPC分类号： H01L29/66765 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78678

摘要： A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a first crystalline semiconductor film is formed. A barrier layer and a second semiconductor layer are formed on the first crystalline semiconductor film. The second semiconductor layer contains a rare gas element at a concentration of 1×1019 to 2×1022/cm3, preferably 1×1020 to 1×1021/cm3 and oxygen at a concentration of 5×1017 to 1×1021/cm3. Subsequently, by a second treatment in an inert gas, the catalyst element remaining in the first crystalline semiconductor film is moved to the second semiconductor film.

摘要翻译： 在绝缘表面上形成第一非晶半导体膜。 加入促进结晶的催化剂元素。 此后，通过在惰性气体中的第一次热处理，形成第一晶体半导体膜。 在第一结晶半导体膜上形成阻挡层和第二半导体层。 第二半导体层含有浓度为1×10 19至2×10 22 / cm 3的稀有气体元素，优选为1×10 20， 浓度为5×10 17至1×10 21 / cm 3的氧气和1×10 12 / cm 3 ^{3 。 随后，通过在惰性气体中的第二次处理，残留在第一结晶半导体膜中的催化剂元素移动到第二半导体膜。}

公开(公告)号：US06479333B1

公开(公告)日：2002-11-12

申请号：US09532166

申请日：2000-03-21

申请人： Tamae Takano ,  Hideto Ohnuma ,  Hisashi Ohtani ,  Setsuo Nakajima ,  Shunpei Yamazaki

发明人： Tamae Takano ,  Hideto Ohnuma ,  Hisashi Ohtani ,  Setsuo Nakajima ,  Shunpei Yamazaki

IPC分类号： H01L2184

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022

摘要： A crystal growth 301 is carried out by diffusing a metal element, and a nickel element is moved into regions 108 and 109 which has been doped with phosphorus. An axis coincident with the moving directions 302 and 303 of the nickel element at this time is made to coincide with an axis coincident with the direction of the crystal growth, and a TFT having the regions as channel forming regions is manufactured. In the path of the region where nickel moved, since high crystallinity is obtained in the moving direction, the TFT having high characteristics can be obtained by this way.

摘要翻译： 通过扩散金属元素进行晶体生长301，并且将镍元素移动到已掺杂磷的区域108和109中。 此时与镍元素的移动方向302,303一致的轴线与与晶体生长方向一致的轴线一致，制造具有作为沟道形成区域的区域的TFT。 在镍移动的区域的路径中，由于在移动方向上获得高结晶度，所以可以通过这种方式获得具有高特性的TFT。

公开(公告)号：US06197626B1

公开(公告)日：2001-03-06

申请号：US09028963

申请日：1998-02-23

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

IPC分类号： H01L2100

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/3221 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765

摘要： A TFT having stable characteristics is obtained by using a crystal silicon film obtained by crystallizing an amorphous silicon film by using nickel. Phosphorus ions are implanted to regions 111 and 112 by using a mask 109. Then, a heat treatment is performed to getter nickel existing in a region 113 to the regions 111 and 112. Then, the mask 109 is side-etched to obtain a pattern 115. Then, the regions 111 and 112 are removed by utilizing the pattern 115 and to pattern the region 113. Thus, a region 116 from which nickel element has been removed is obtained. The TFT is fabricated by using the region 116 as an active layer.

摘要翻译： 通过使用通过使用镍使非晶硅膜结晶而获得的晶体硅膜获得具有稳定特性的TFT。 通过使用掩模109将磷离子注入到区域111和112中。然后，进行热处理以将存在于区域113中的镍吸收到区域111和112.然后，对掩模109进行侧蚀刻以获得图案 然后，通过利用图案115去除区域111和112，并对区域113进行图案化。因此，获得了已经从中去除了镍元素的区域116。 通过使用区域116作为有源层来制造TFT。