公开(公告)号：US06613614B2

公开(公告)日：2003-09-02

申请号：US10101830

申请日：2002-03-21

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

IPC分类号： H01L2184

CPC分类号： H01L29/66757 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78621

摘要： A TFT using an aluminum material for a gate electrode is manufactured at a high yield factor. The gate electrode provided over an active layer and a gate insulating film is constituted by a lamination film of a tantalum layer and an aluminum layer. In this structure, the tantalum layer functions as a stopper, so that it is possible to prevent a constituent material of the aluminum layer from intruding into the gate insulating film. An end portion of the tantalum layer is transformed into tantalum oxide, which has an effect to lower damage at ion implantation to the gate insulating film in the formation of an LDD region.

公开(公告)号：US06369410B1

公开(公告)日：2002-04-09

申请号：US09210781

申请日：1998-12-15

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

IPC分类号： H01L2949

CPC分类号： H01L29/66757 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78621

摘要： A TFT using an aluminum material for a gate electrode is manufactured at a high yield factor. The gate electrode provided over an active layer and a gate insulating film is constituted by a lamination film of a tantalum layer and an aluminum layer. In this structure, the tantalum layer functions as a stopper, so that it is possible to prevent a constituent material of the aluminum layer from intruding into the gate insulating film. An end portion of the tantalum layer is transformed into tantalum oxide, which has an effect to lower damage at ion implantation to the gate insulating film in the formation of an LDD region.

公开(公告)号：US07799665B2

公开(公告)日：2010-09-21

申请号：US11705793

申请日：2007-02-14

申请人： Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

发明人： Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

IPC分类号： H01L21/20

CPC分类号： H01L21/02686 ,  B23K26/04 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/1285 ,  Y10S117/904 ,  Y10S148/09

摘要： A laser processing process which comprises laser annealing a silicon film 2 μm or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.

摘要翻译： 一种激光加工方法，其包括通过照射400nm以下的波长的激光束并以脉冲宽度为50ns以上，优选为100nsec的脉冲模式，激光退火2μm以下的硅膜， 更多。 一种激光加工装置，包括激光产生装置和用于在其上安装与所述装置分开设置的样品的载台，从而防止归因于载物台移动的振动传递到激光产生装置和光学系统。 可以获得稳定的激光束，从而提高生产率。

公开(公告)号：US07179726B2

公开(公告)日：2007-02-20

申请号：US10367831

申请日：2003-02-19

申请人： Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

发明人： Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

IPC分类号： H01L21/20

CPC分类号： H01L21/02686 ,  B23K26/04 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/1285 ,  Y10S117/904 ,  Y10S148/09

摘要： A laser processing process which comprises laser annealing a silicon film 2 μm or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more.A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.

摘要翻译： 一种激光加工方法，其特征在于，通过照射波长400nm以下的激光束，以脉冲宽度为50ns以上，优选为100nsec的脉冲模式，激光退火2μm以下的硅膜， 更多。 一种激光加工装置，包括激光产生装置和用于在其上安装与所述装置分开设置的样品的载台，从而防止归因于载物台移动的振动传递到激光产生装置和光学系统。 可以获得稳定的激光束，从而提高生产率。

公开(公告)号：US20070141859A1

公开(公告)日：2007-06-21

申请号：US11705793

申请日：2007-02-14

申请人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

发明人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  B23K26/04 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/1285 ,  Y10S117/904 ,  Y10S148/09

摘要： A laser processing process which comprises laser annealing a silicon film 2 μm or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said devices to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.

摘要翻译： 一种激光加工方法，其特征在于，通过照射波长400nm以下的激光束，以脉冲宽度为50ns以上，优选为100nsec的脉冲模式，激光退火2μm以下的硅膜， 更多。 一种激光加工装置，包括激光产生装置和用于在其上安装与所述装置分开设置的样品的台，从而防止归因于舞台的运动的振动传递到激光产生装置和光学系统。 可以获得稳定的激光束，从而提高生产率。

公开(公告)号：US06638800B1

公开(公告)日：2003-10-28

申请号：US09409899

申请日：1999-10-01

申请人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

发明人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

IPC分类号： H01L2100

CPC分类号： H01L21/02686 ,  B23K26/04 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/1285 ,  Y10S117/904 ,  Y10S148/09

摘要： A laser processing process which comprises laser annealing a silicon film 2 &mgr;m or less in thickness by irradiating at laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said devices to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.

摘要翻译： 一种激光加工工艺，其包括通过在波​​长400nm或更小的激光束照射波长激光退火2μm或更小的硅膜，并以脉冲宽度为50nsec以上，优选为100nsec的脉冲模式操作， 一种激光加工装置，包括激光产生装置和用于在其上安装与所述装置分开设置的样品的载台，从而防止归因于载物台移动的振动传递到激光产生装置和光学系统。 可以获得稳定的激光束，从而提高生产率。

公开(公告)号：US5891764A

公开(公告)日：1999-04-06

申请号：US739192

申请日：1996-10-30

申请人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

发明人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

IPC分类号： B23K26/04 ,  H01L21/20 ,  H01L21/77 ,  H01L21/822 ,  H01L21/84 ,  H01L21/00

CPC分类号： B23K26/04 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/1285 ,  Y10S117/904 ,  Y10S148/09

摘要： A laser processing process which comprises laser annealing a silicon film 2 .mu.m or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more.A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.

摘要翻译： 一种激光加工方法，其特征在于，激光退火厚度在2μm以下的硅膜，通过照射波长400nm以下的激光束，脉冲宽度为50nsec以上，优选为100nsec 或者更多。 一种激光加工装置，包括激光产生装置和用于在其上安装与所述装置分开设置的样品的载台，从而防止归因于载物台移动的振动传递到激光产生装置和光学系统。 可以获得稳定的激光束，从而提高生产率。

公开(公告)号：US5643801A

公开(公告)日：1997-07-01

申请号：US511466

申请日：1995-08-04

申请人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

发明人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

IPC分类号： B23K26/04 ,  H01L21/20 ,  H01L21/77 ,  H01L21/822 ,  H01L21/84 ,  B23K26/02 ,  H01L21/268

CPC分类号： B23K26/04 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/1285 ,  Y10S117/904 ,  Y10S148/09

摘要： A laser processing process which includes laser annealing a silicon film 2 .mu.m or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more and preferably, 100 nsec or more. The invention further relates to a laser processing apparatus which includes a laser generation device and a stage for mounting thereon a sample provide separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.

摘要翻译： 一种激光加工方法，其包括通过照射波长为400nm以下的激光束并以脉冲宽度为50ns以上，优选为100nsec的脉冲模式来激光退火2μm以下的硅膜， 更多。 本发明还涉及一种激光加工装置，其包括激光产生装置和用于在其上安装样品的载物台，与所述装置分开提供，从而防止归因于载物台移动的振动传递到激光产生装置和光学 系统。 可以获得稳定的激光束，从而提高生产率。

公开(公告)号：US08459561B2

公开(公告)日：2013-06-11

申请号：US12204320

申请日：2008-09-04

申请人： Tomoyuki Aoki ,  Takuya Tsurume ,  Hiroki Adachi ,  Nozomi Horikoshi ,  Hisashi Ohtani

发明人： Tomoyuki Aoki ,  Takuya Tsurume ,  Hiroki Adachi ,  Nozomi Horikoshi ,  Hisashi Ohtani

IPC分类号： G06K19/06

CPC分类号： H01L23/29 ,  G06K19/07749 ,  H01L21/563 ,  H01L23/145 ,  H01L23/295 ,  H01L23/3121 ,  H01L23/60 ,  H01L23/66 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/13 ,  H01L2223/6677 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/09701 ,  H01L2924/12032 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/3025 ,  Y10T428/31522 ,  H01L2924/00

摘要： A separation layer and a semiconductor element layer including a thin film transistor are formed. A conductive resin electrically connected to the semiconductor element layer is formed. A first sealing layer including a fiber and an organic resin layer is formed over the semiconductor element layer and the conductive resin. A groove is formed in the first sealing layer, the semiconductor element layer, and the separation layer. A liquid is dropped into the groove to separate the separation layer and the semiconductor element layer. The first sealing layer over the conductive resin is removed to form an opening. A set of the first sealing layer and the semiconductor element layer is divided into a chip. The chip is bonded to an antenna formed over a base material. A second sealing layer including a fiber and an organic resin layer is formed so as to cover the antenna and the chip.

摘要翻译： 形成包括薄膜晶体管的分离层和半导体元件层。 形成与半导体元件层电连接的导电树脂。 包含纤维和有机树脂层的第一密封层形成在半导体元件层和导电树脂上。 在第一密封层，半导体元件层和分离层中形成凹槽。 将液体滴入槽中以分离分离层和半导体元件层。 去除导电树脂上的第一密封层以形成开口。 一组第一密封层和半导体元件层被分成芯片。 芯片结合到形成在基材上的天线。 形成包括纤维和有机树脂层的第二密封层，以覆盖天线和芯片。

公开(公告)号：US07141461B2

公开(公告)日：2006-11-28

申请号：US10878687

申请日：2004-06-29

申请人： Hisashi Ohtani ,  Hiroki Adachi ,  Akiharu Miyanaga ,  Toru Takayama

发明人： Hisashi Ohtani ,  Hiroki Adachi ,  Akiharu Miyanaga ,  Toru Takayama

IPC分类号： H01L21/84

CPC分类号： H01L27/1277 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1214 ,  H01L29/66757

摘要： In a method for crystallizing an amorphous silicon film by a heat treatment that is effected for a duration of about 4 hours at about 550° C. using a catalyst element for accelerating the crystallization, the quantity of the catalyst element to be introduced into the amorphous silicon is precisely controlled. A resist mask 21 is formed on the surface of an amorphous silicon film 12 provided on a glass substrate 11, and an aqueous solution 14, e.g., an acetate solution, containing a catalyst element such as nickel at a concentration controlled in a range of from 10 to 200 ppm (need to be adjusted) is supplied dropwise thereto. After maintaining the state for a predetermined duration of time, the entire substrate is subjected to spin drying using a spinner 15. A thin film of crystalline silicon is finally obtained by applying heat treatment at 550° C. for a duration of 4 hours.

摘要翻译： 在通过使用催化剂元素在约550℃下进行约4小时的热处理使非晶硅膜结晶的方法中，用于加速结晶的催化剂元素的量将被引入非晶态 硅精确控制。 在设置在玻璃基板11上的非晶硅膜12的表面上形成抗蚀剂掩模21和含有催化剂元素如镍的水溶液14，例如乙酸盐溶液，其浓度控制在 向其中滴加10〜200ppm（需要调节）。 在将状态保持预定的时间之后，使用旋转器15对整个基板进行旋转干燥。 最终通过在550℃下进行热处理4小时来获得晶体硅薄膜。