公开(公告)号：US06613614B2

公开(公告)日：2003-09-02

申请号：US10101830

申请日：2002-03-21

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

IPC分类号： H01L2184

CPC分类号： H01L29/66757 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78621

摘要： A TFT using an aluminum material for a gate electrode is manufactured at a high yield factor. The gate electrode provided over an active layer and a gate insulating film is constituted by a lamination film of a tantalum layer and an aluminum layer. In this structure, the tantalum layer functions as a stopper, so that it is possible to prevent a constituent material of the aluminum layer from intruding into the gate insulating film. An end portion of the tantalum layer is transformed into tantalum oxide, which has an effect to lower damage at ion implantation to the gate insulating film in the formation of an LDD region.

公开(公告)号：US06369410B1

公开(公告)日：2002-04-09

申请号：US09210781

申请日：1998-12-15

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

IPC分类号： H01L2949

CPC分类号： H01L29/66757 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78621

摘要： A TFT using an aluminum material for a gate electrode is manufactured at a high yield factor. The gate electrode provided over an active layer and a gate insulating film is constituted by a lamination film of a tantalum layer and an aluminum layer. In this structure, the tantalum layer functions as a stopper, so that it is possible to prevent a constituent material of the aluminum layer from intruding into the gate insulating film. An end portion of the tantalum layer is transformed into tantalum oxide, which has an effect to lower damage at ion implantation to the gate insulating film in the formation of an LDD region.

公开(公告)号：US06576924B1

公开(公告)日：2003-06-10

申请号：US09498646

申请日：2000-02-07

申请人： Shunpei Yamazaki ,  Yukio Tanaka ,  Jun Koyama ,  Mitsuaki Osame ,  Satoshi Murakami ,  Hideto Ohnuma ,  Etsuko Fujimoto ,  Hidehito Kitakado

发明人： Shunpei Yamazaki ,  Yukio Tanaka ,  Jun Koyama ,  Mitsuaki Osame ,  Satoshi Murakami ,  Hideto Ohnuma ,  Etsuko Fujimoto ,  Hidehito Kitakado

IPC分类号： H01L2900

CPC分类号： G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3272 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78675 ,  H01L51/5246 ,  H01L51/5284 ,  H01L2227/323

摘要： A semiconductor device in which TFTs of suitable structures are arranged depending upon the performances of the circuits, and storage capacitors are formed occupying small areas, the semiconductor device featuring high performance and bright image. The thickness of the gate-insulating film is differed depending upon a circuit that gives importance to the operation speed and a circuit that gives importance to the gate-insulating breakdown voltage, and the position for forming the LDD region is differed depending upon the TFT that gives importance to the countermeasure against the hot carriers and the TFT that gives importance to the countermeasure against the off current. This makes it possible to realize a semiconductor device of high performance. Further, the storage capacity is formed by a light-shielding film and an oxide thereof to minimize its area, and a semiconductor device capable of displaying a bright picture is realized.

摘要翻译： 一种半导体器件，其中根据电路的性能布置适当结构的TFT，并且形成占据小面积的存储电容器，该半导体器件具有高性能和明亮的图像。 栅极绝缘膜的厚度取决于重视操作速度的电路和重要的栅极绝缘击穿电压的电路，并且用于形成LDD区域的位置取决于TFT的TFT而不同 重视对抗热门运营商和TFT的对策，重点针对当前的对策。 这使得可以实现高性能的半导体器件。 此外，存储容量由遮光膜和其氧化物形成，以使其面积最小化，并且实现了能够显示亮画面的半导体器件。

公开(公告)号：US07288789B2

公开(公告)日：2007-10-30

申请号：US10446187

申请日：2003-05-28

申请人： Shunpei Yamazaki ,  Yukio Tanaka ,  Jun Koyama ,  Mitsuaki Osame ,  Satoshi Murakami ,  Hideto Ohnuma ,  Etsuko Fujimoto ,  Hidehito Kitakado

发明人： Shunpei Yamazaki ,  Yukio Tanaka ,  Jun Koyama ,  Mitsuaki Osame ,  Satoshi Murakami ,  Hideto Ohnuma ,  Etsuko Fujimoto ,  Hidehito Kitakado

IPC分类号： H01L31/0376 ,  H01L31/20 ,  H01L31/036

CPC分类号： G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3272 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78675 ,  H01L51/5246 ,  H01L51/5284 ,  H01L2227/323

摘要： A semiconductor device in which TFTs of suitable structures are arranged depending upon the performances of the circuits, and storage capacitors are formed occupying small areas, the semiconductor device featuring high performance and bright image. The thickness of the gate-insulating film is differed depending upon a circuit that gives importance to the operation speed and a circuit that gives importance to the gate-insulating breakdown voltage, and the position for forming the LDD region is differed depending upon the TFT that gives importance to the countermeasure against the hot carriers and the TFT that gives importance to the countermeasure against the off current. This makes it possible to realize a semiconductor device of high performance. Further, the storage capacity is formed by a light-shielding film and an oxide thereof to minimize its area, and a semiconductor device capable of displaying a bright picture is realized.

摘要翻译： 一种半导体器件，其中根据电路的性能布置适当结构的TFT，并且形成占据小面积的存储电容器，该半导体器件具有高性能和明亮的图像。 栅极绝缘膜的厚度取决于重视操作速度的电路和重要的栅极绝缘击穿电压的电路，并且用于形成LDD区域的位置取决于TFT的TFT而不同 重视对抗热门运营商和TFT的对策，重点针对当前的对策。 这使得可以实现高性能的半导体器件。 此外，存储容量由遮光膜和其氧化物形成，以使其面积最小化，并且实现了能够显示亮画面的半导体器件。

公开(公告)号：US07485553B2

公开(公告)日：2009-02-03

申请号：US11580938

申请日：2006-10-16

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Hideto Ohnuma ,  Tamae Takano ,  Kenji Kasahara ,  Koji Dairiki

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Hideto Ohnuma ,  Tamae Takano ,  Kenji Kasahara ,  Koji Dairiki

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L29/66765 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78678

摘要： A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a first crystalline semiconductor film is formed. A barrier layer and a second semiconductor layer are formed on the first crystalline semiconductor film. The second semiconductor layer contains a rare gas element at a concentration of 1×1019 to 2×1022/cm3, preferably 1×1020 to 1×1021/cm3 and oxygen at a concentration of 5×1017 to 1×1021/cm3. Subsequently, by a second treatment in an inert gas, the catalyst element remaining in the first crystalline semiconductor film is moved to the second semiconductor film.

公开(公告)号：US06544826B1

公开(公告)日：2003-04-08

申请号：US09717142

申请日：2000-11-22

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

IPC分类号： H01L2100

CPC分类号： H01L29/66765 ,  H01L29/78621

摘要： In producing TFT by crystallizing an amorphous silicon film by the action of nickel, the influence of nickel on the TFT produced is inhibited. A mask 104 is formed over an amorphous silicon film 102, and a nickel-containing solution is applied thereover. In that condition, nickel is kept in contact with the surface of the amorphous silicon film at the opening 103 of the mask. Then, this is heated to crystallize the amorphous silicon film. Next, a phosphorus-containing solution is applied thereto, so that phosphorus is introduced into the silicon film in the region of the opening 103. This is again heated, whereby nickel is gettered in the region into which phosphorus has been introduced. In this process, the nickel concentration in the silicon film is reduced.

摘要翻译： 在通过镍的作用使非晶硅膜结晶而制造TFT时，镍对所制造的TFT的影响被抑制。 在非晶硅膜102上形成掩模104，并且在其上施加含镍溶液。 在这种情况下，镍在掩模的开口103处与非晶硅膜的表面保持接触。 然后，将其加热以使非晶硅膜结晶。 接下来，向其中施加含磷溶液，使得在开口103的区域中将磷引入到硅膜中。这再次被加热，由此在被引入磷的区域中镍被吸收。 在此过程中，硅膜中的镍浓度降低。

公开(公告)号：US06448118B2

公开(公告)日：2002-09-10

申请号：US09749863

申请日：2000-12-26

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

IPC分类号： H01L2100

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/3221 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765

摘要： A TFT having stable characteristics is obtained by using a crystal silicon film obtained by crystallizing an amorphous silicon film by using nickel. Phosphorus ions are implanted to regions 111 and 112 by using a mask 109. Then, a heat treatment is performed to getter nickel existing in a region 113 to the regions 111 and 112. Then, the mask 109 is side-etched to obtain a pattern 115. Then, the regions 111 and 112 are removed by utilizing the pattern 115 and to pattern the region 113. Thus, a region 116 from which nickel element has been removed is obtained. The TFT is fabricated by using the region 116 as an active layer.

摘要翻译： 通过使用通过使用镍使非晶硅膜结晶而获得的晶体硅膜获得具有稳定特性的TFT。 通过使用掩模109将磷离子注入到区域111和112中。然后，进行热处理以将存在于区域113中的镍吸收到区域111和112.然后，对掩模109进行侧蚀刻以获得图案 然后，通过利用图案115去除区域111和112，并对区域113进行图案化。因此，获得了已经从中去除了镍元素的区域116。 通过使用区域116作为有源层来制造TFT。

公开(公告)号：US6156590A

公开(公告)日：2000-12-05

申请号：US98004

申请日：1998-06-16

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L29/66765 ,  H01L29/78621

摘要： In producing TFT by crystallizing an amorphous silicon film by the action of nickel, the influence of nickel on the TFT produced is inhibited. A mask 104 is formed over an amorphous silicon film 102, and a nickel-containing solution is applied thereover. In that condition, nickel is kept in contact with the surface of the amorphous silicon film at the opening 103 of the mask. Then, this is heated to crystallize the amorphous silicon film. Next, a phosphorus-containing solution is applied thereto, so that phosphorus is introduced into the silicon film in the region of the opening 103. This is again heated, whereby nickel is gettered in the region into which phosphorus has been introduced. In this process, the nickel concentration in the silicon film is reduced.

公开(公告)号：US6133075A

公开(公告)日：2000-10-17

申请号：US65692

申请日：1998-04-24

申请人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Tamae Takano ,  Hisashi Ohtani

发明人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Tamae Takano ,  Hisashi Ohtani

IPC分类号： G02B5/30 ,  G02B27/00 ,  G02B27/01 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L21/00

CPC分类号： G02B27/017 ,  H01L27/1255 ,  H01L27/1277 ,  H01L29/66757 ,  G02B2027/0138 ,  G02B5/30 ,  G02F1/13454

摘要： There are disclosed techniques for providing a simplified process sequence for fabricating a semiconductor device. The sequence starts with forming an amorphous film containing silicon. Then, an insulating film having openings is formed on the amorphous film. A catalytic element is introduced through the openings to effect crystallization. Thereafter, a window is formed in the insulating film, and P ions are implanted. This process step forms two kinds of regions simultaneously (i.e., gettering regions for gettering the catalytic element and regions that will become the lower electrode of each auxiliary capacitor later).

公开(公告)号：US07429751B2

公开(公告)日：2008-09-30

申请号：US11448041

申请日：2006-06-07

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

IPC分类号： H01L31/00

CPC分类号： H01L27/1259 ,  G02F1/13454 ,  H01L27/1214 ,  H01L27/127

摘要： There is provided a method of manufacturing a semiconductor device having a TFT with sufficient characteristics and little fluctuation by accurately controlling the addition amount of impurity ions to the semiconductor layer using an ion doping device. A semiconductor device having a TFT showing sufficient and stable characteristics may be obtained by increasing the ratio of the dopant amount in the doping gas and decreasing the ambient atmosphere components (C, N, O) and hydrogen to be simultaneously added with the impurity ions at the time of doping.

摘要翻译： 提供一种通过使用离子掺杂装置精确地控制向半导体层的杂质离子的添加​​量，制造具有足够特性和很小波动的TFT的半导体器件的制造方法。 可以通过增加掺杂气体中的掺杂剂量和减少环境气氛成分（C，N，O）和同时加入杂质离子的氢来减少具有足够和稳定特性的TFT的半导体器件 兴奋剂的时候