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1.发明授权公开(公告)号：US08389989B2
公开(公告)日：2013-03-05
申请号：US12869278
申请日：2010-08-26
IPC分类号： H01L29/12
CPC分类号： H01L27/1225 , H01L27/1214 , H01L27/1248 , H01L27/1255 , H01L27/3248 , H01L27/3262 , H01L27/3265 , H01L29/24 , H01L29/42356 , H01L29/45 , H01L29/458 , H01L29/4908 , H01L29/78606 , H01L29/78618 , H01L29/7869 , H01L29/78693
摘要： It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.
摘要翻译： 本发明的目的是制造使用具有良好的电特性和高可靠性的薄膜晶体管作为开关元件的高度可靠的显示装置。 在包括非晶氧化物半导体的底栅薄膜晶体管中，在已经通过热处理脱水或脱氢的氧化物半导体层与源电极层和漏电极层中的每一个之间形成具有晶体区的氧化物导电层， 使用金属材料形成。 因此，可以减小氧化物半导体层与源极电极层和漏极电极层中的每一个之间的接触电阻; 因此，可以提供具有良好电特性的薄膜晶体管和使用该薄膜晶体管的高度可靠的显示装置。
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2.发明授权Semiconductor device with two oxide semiconductor layers and manufacturing method thereof 有权具有两个氧化物半导体层的半导体器件及其制造方法公开(公告)号：US08421083B2
公开(公告)日：2013-04-16
申请号：US12846556
申请日：2010-07-29
CPC分类号： H01L33/0041 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L29/78606 , H01L29/7869 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： In a bottom-gate thin film transistor using the stack of the first oxide semiconductor layer and the second oxide semiconductor layer, an oxide insulating layer serving as a channel protective layer is formed over and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the insulating layer, an oxide insulating layer covering a peripheral portion (including a side surface) of the stack of the oxide semiconductor layers is formed.
摘要翻译： 在使用第一氧化物半导体层和第二氧化物半导体层的堆叠的底栅极薄膜晶体管中，形成作为沟道保护层的氧化物绝缘层，与氧化物半导体层的与 栅电极层。 在与绝缘层的形成相同的步骤中，形成覆盖氧化物半导体层的叠层的周边部分（包括侧面）的氧化物绝缘层。
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公开(公告)号：US08629432B2
公开(公告)日：2014-01-14
申请号：US12683681
申请日：2010-01-07
IPC分类号： H01L29/786 , H01L21/36
CPC分类号： H01L29/78696 , C23C14/086 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02592 , H01L21/02631 , H01L27/1225 , H01L29/7869 , H01L29/78693 , H04M1/0266
摘要： A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability. Film deposition is performed using an oxide semiconductor target containing an insulator (an insulating oxide, an insulating nitride, silicon oxynitride, aluminum oxynitride, or the like), typically SiO2, so that the semiconductor device in which the Si-element concentration in the thickness direction of the oxide semiconductor layer has a gradient which increases in accordance with an increase in a distance from a gate electrode is realized.
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公开(公告)号：US08389326B2
公开(公告)日：2013-03-05
申请号：US13495432
申请日：2012-06-13
IPC分类号： H01L21/00
CPC分类号： H01L21/477 , H01L21/02565 , H01L21/02664 , H01L21/383 , H01L21/46 , H01L27/1225 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.
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公开(公告)号：US08207014B2
公开(公告)日：2012-06-26
申请号：US12826021
申请日：2010-06-29
IPC分类号： H01L21/00
CPC分类号： H01L21/477 , H01L21/02565 , H01L21/02664 , H01L21/383 , H01L21/46 , H01L27/1225 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.
摘要翻译： 本发明的目的是制造具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括使用氧化物半导体膜用于包括沟道形成区域的半导体层的薄膜晶体管的半导体器件的制造方法中，进行热处理（脱水或脱氢）以提高氧化物半导体膜的纯度 并减少杂质，包括水分等。 之后，在氧气氛下进行缓慢冷却。 除了在氧化物半导体膜中排出的含有水分等的杂质以外，热处理会导致在栅极绝缘层中退出的杂质，包括氧化物半导体膜和膜之间的界面中的杂质，氧化物半导体膜和氧化物之间和之下的界面 半导体并与其接触。
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6.发明授权Method for manufacturing semiconductor device including oxide semiconductor film 有权包括氧化物半导体膜的半导体器件的制造方法公开(公告)号：US08900916B2
公开(公告)日：2014-12-02
申请号：US12832329
申请日：2010-07-08
申请人： Shunpei Yamazaki , Miyuki Hosoba , Kosei Noda , Hiroki Ohara , Toshinari Sasaki , Junichiro Sakata
发明人： Shunpei Yamazaki , Miyuki Hosoba , Kosei Noda , Hiroki Ohara , Toshinari Sasaki , Junichiro Sakata
IPC分类号： H01L21/00
CPC分类号： H01L29/66969 , H01L21/477 , H01L27/1225 , H01L29/7869
摘要： A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.
摘要翻译： 一种高度可靠的半导体器件及其制造方法，其包括具有稳定电特性的薄膜晶体管。 在包括具有沟道形成区域的半导体层是氧化物半导体层的薄膜晶体管的半导体器件的制造方法中，减少诸如水分的杂质的热处理以提高氧化物半导体层的纯度并氧化氧化物 进行半导体层（脱水或脱氢的热处理）。 氧化物半导体层中的水分等杂质，以及存在于栅极绝缘层中的杂质都会降低，氧化物半导体层和氧化物半导体层之间的界面中存在的水分等杂质与氧化物半导体层 减少了
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公开(公告)号：US08450144B2
公开(公告)日：2013-05-28
申请号：US12722795
申请日：2010-03-12
IPC分类号： H01L21/00
CPC分类号： H01L29/7869 , G09G3/3258 , G09G3/3275 , G09G2300/0842 , G09G2300/0861 , G09G2310/0248 , G09G2310/0297 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L27/12 , H01L27/1225 , H01L27/1288 , H01L27/3262 , H01L27/3276 , H01L29/66969 , H01L29/78618
摘要： An object of an embodiment of the present invention is to provide a semiconductor device provided with a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor layer including silicon oxide, an insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain regions between the oxide semiconductor layer including silicon oxide and source and drain electrode layers. The source and drain regions are formed using a degenerate oxide semiconductor material or a degenerate oxynitride material.
摘要翻译： 本发明的一个实施例的目的是提供一种具有薄膜晶体管的半导体器件，该薄膜晶体管包括氧化物半导体层并具有高电特性。 半导体器件包括绝缘表面上的栅电极，包括氧化硅的氧化物半导体层，栅电极和氧化物半导体层之间的绝缘层，以及包括氧化硅的氧化物半导体层和源极和漏极之间的源极和漏极区 电极层。 源区和漏区使用简并氧化物半导体材料或简并氧氮化物材料形成。
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公开(公告)号：US08294147B2
公开(公告)日：2012-10-23
申请号：US12832333
申请日：2010-07-08
IPC分类号： H01L29/786
CPC分类号： H01L27/127 , H01L21/477 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1274 , H01L27/1296 , H01L29/04 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78693
摘要： An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.
摘要翻译： 目的是制造和提供包括具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括薄膜晶体管的半导体器件的制造方法中，其中包括沟道形成区域的半导体层用作氧化物半导体膜，用于减少诸如湿度的杂质（脱水或脱氢热处理）的热处理在 形成与氧化物半导体层接触的用作保护膜的氧化物绝缘膜。 然后，在漏极电极层，栅极绝缘层和氧化物半导体层中以及在氧化物半导体膜和上下膜之间的界面处不仅在源电极层中存在的诸如水分的杂质 它们与氧化物半导体层接触。
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公开(公告)号：US09136389B2
公开(公告)日：2015-09-15
申请号：US12581200
申请日：2009-10-19
IPC分类号： H01L29/10 , H01L29/12 , H01L29/786 , H01L29/45 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/45 , H01L29/78618
摘要： An object is to control composition and a defect of an oxide semiconductor. Another object is to increase field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with off current suppressed. The oxide semiconductor is represented by InMO3(ZnO)n (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and n is a non-integer number of greater than or equal to 1 and less than 50) and further contains hydrogen. In this case, the concentration of Zn is made to be lower than the concentrations of In and M (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al). In addition, the oxide semiconductor has an amorphous structure. Here, n is preferably a non-integer number of greater than or equal to 50, more preferably less than 10.
摘要翻译： 目的是控制氧化物半导体的组成和缺陷。 另一个目的是增加薄膜晶体管的场效应迁移率，并获得足够的开关比，同时抑制截止电流。 氧化物半导体由InMO 3（ZnO）n（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素表示，n是大于或等于1的非整数） 小于50），还含有氢。 在这种情况下，使Zn的浓度低于In和M的浓度（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素）。 此外，氧化物半导体具有非晶结构。 这里，n优选为大于或等于50，更优选小于10的非整数。
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公开(公告)号：US08609478B2
公开(公告)日：2013-12-17
申请号：US12826007
申请日：2010-06-29
IPC分类号： H01L21/84
CPC分类号： H01L21/02664 , H01L21/02565 , H01L27/1225 , H01L29/66969 , H01L29/78606 , H01L29/78618 , H01L29/7869
摘要： It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region using an oxide semiconductor layer, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer.
摘要翻译： 本发明的目的是提供一种高度可靠的半导体器件，其包括具有稳定电特性的薄膜晶体管。 另一个目的是以更高的生产率以更低的成本制造高可靠性的半导体器件。 在制造半导体器件的方法中，该半导体器件包括薄膜晶体管，其中使用氧化物半导体层形成包括使用氧化物半导体层的沟道形成区域，源极区域和漏极区域的半导体层，用于减少杂质的热处理 例如水分（用于脱水或脱氢的热处理）以提高氧化物半导体层的纯度。
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