公开(公告)号：US08828794B2

公开(公告)日：2014-09-09

申请号：US13413684

申请日：2012-03-07

申请人： Shunpei Yamazaki ,  Yuhei Sato ,  Keiji Sato ,  Tetsunori Maruyama ,  Junichi Koezuka

发明人： Shunpei Yamazaki ,  Yuhei Sato ,  Keiji Sato ,  Tetsunori Maruyama ,  Junichi Koezuka

IPC分类号： H01L21/42 ,  H01L21/84 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L21/40 ,  H01L21/02175 ,  H01L21/02252 ,  H01L21/02565 ,  H01L21/02636 ,  H01L21/02664 ,  H01L21/324 ,  H01L21/383 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

摘要翻译： 在包括氧化物半导体膜的晶体管的制造过程中，对氧化物半导体膜进行氧掺杂处理，然后对氧化物半导体膜和设置在氧化物半导体膜上的氧化铝膜进行热处理。 因此，形成包含比化学计量组成物多的氧的区域的氧化物半导体膜。 使用氧化物半导体膜形成的晶体管可以具有高的可靠性，因为通过偏压 - 温度应力测试（BT测试）的晶体管的阈值电压的变化量减小。

公开(公告)号：US08753928B2

公开(公告)日：2014-06-17

申请号：US13413686

申请日：2012-03-07

申请人： Shunpei Yamazaki ,  Yuhei Sato ,  Keiji Sato ,  Tetsunori Maruyama

发明人： Shunpei Yamazaki ,  Yuhei Sato ,  Keiji Sato ,  Tetsunori Maruyama

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/78693

摘要： In a process of manufacturing a transistor including an oxide semiconductor layer, an amorphous oxide semiconductor layer which includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state is formed over a silicon oxide film, an aluminum oxide film is formed over the amorphous oxide semiconductor layer, and then heat treatment is performed so that at least part of the amorphous oxide semiconductor layer is crystallized and an oxide semiconductor layer which includes a crystal having a c-axis substantially perpendicular to a surface of the oxide semiconductor layer is formed.

摘要翻译： 在制造包括氧化物半导体层的晶体管的工艺中，在氧化硅膜上形成包含与结晶态的氧化物半导体的化学计量组成比相比含有过量氧的区域的非晶氧化物半导体层，铝 在非晶形氧化物半导体层上形成氧化膜，然后进行热处理，使得非晶氧化物半导体层的至少一部分结晶，并且包含具有c轴的晶体的氧化物半导体层，该晶体基本上垂直于 形成氧化物半导体层。

公开(公告)号：US09960278B2

公开(公告)日：2018-05-01

申请号：US13437271

申请日：2012-04-02

申请人： Yuhei Sato ,  Keiji Sato ,  Toshinari Sasaki ,  Tetsunori Maruyama ,  Atsuo Isobe ,  Tsutomu Murakawa ,  Sachiaki Tezuka

发明人： Yuhei Sato ,  Keiji Sato ,  Toshinari Sasaki ,  Tetsunori Maruyama ,  Atsuo Isobe ,  Tsutomu Murakawa ,  Sachiaki Tezuka

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L27/32 ,  H01L21/477

CPC分类号： H01L29/7869 ,  H01L21/477

摘要： To provide a highly reliable semiconductor device manufactured by giving stable electric characteristics to a semiconductor device including an oxide semiconductor. In a manufacturing process of a transistor, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a gate insulating film, a gate electrode layer, and an aluminum oxide film are formed in this order, and then heat treatment is performed on the oxide semiconductor layer and the aluminum oxide film, whereby an oxide semiconductor layer from which an impurity containing a hydrogen atom is removed and which includes a region containing oxygen more than the stoichiometric proportion is formed. In addition, when the aluminum oxide film is formed, entry and diffusion of water or hydrogen into the oxide semiconductor layer from the air due to heat treatment in a manufacturing process of a semiconductor device or an electronic appliance including the transistor can be prevented.

公开(公告)号：US20120129287A1

公开(公告)日：2012-05-24

申请号：US13360838

申请日：2012-01-30

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Naoya Sakamoto ,  Kengo Akimoto ,  Keiji Sato ,  Tetsunori Maruyama

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Naoya Sakamoto ,  Kengo Akimoto ,  Keiji Sato ,  Tetsunori Maruyama

IPC分类号： H01L33/08

CPC分类号： H01L51/5206 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3281 ,  H01L27/3295 ,  H01L51/5215 ,  Y10S428/917

摘要： According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide, concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.

摘要翻译： 根据本发明的一个方面，在注入孔（空穴注入电极，阳极）的一侧，代替传统的导电透明氧化物，涂覆含有硅或氧化硅的导电透明氧化物层的叠层结构作为电极 层如ITO。 此外，根据本发明的另一方面，作为空穴注入电极，施加含有硅或氧化硅的导电性透明氧化物层（其含量不同）的叠层结构。 优选地，硅或氧化硅，其连接到TFT的一侧的导电层的浓度范围为1原子％至6原子％，并且在含有机化合物的层的侧面上的硅或氧化硅浓度范围 从7原子％至15原子％。

公开(公告)号：US08129900B2

公开(公告)日：2012-03-06

申请号：US12239248

申请日：2008-09-26

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Naoya Sakamoto ,  Kengo Akimoto ,  Keiji Sato ,  Tetsunori Maruyama

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Naoya Sakamoto ,  Kengo Akimoto ,  Keiji Sato ,  Tetsunori Maruyama

IPC分类号： H01J1/62 ,  H01J63/04 ,  H01J17/49

CPC分类号： H01L51/5206 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3281 ,  H01L27/3295 ,  H01L51/5215 ,  Y10S428/917

摘要： According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.

摘要翻译： 根据本发明的一个方面，在注入孔（空穴注入电极，阳极）的一侧，代替传统的导电透明氧化物，涂覆含有硅或氧化硅的导电透明氧化物层的叠层结构作为电极 层如ITO。 此外，根据本发明的另一方面，作为空穴注入电极，施加含有硅或氧化硅的导电性透明氧化物层（其含量不同）的叠层结构。 优选地，在与TFT连接的一侧上的导电层的硅或氧化硅浓度范围为1原子％至6原子％，并且在含有机化合物的层侧的硅或氧化硅浓度范围为 7原子％至15原子％。

公开(公告)号：US20050093432A1

公开(公告)日：2005-05-05

申请号：US10937904

申请日：2004-09-10

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Naoya Sakamoto ,  Kengo Akimoto ,  Keiji Sato ,  Tetsunori Maruyama

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Naoya Sakamoto ,  Kengo Akimoto ,  Keiji Sato ,  Tetsunori Maruyama

IPC分类号： G09F9/30 ,  H01L27/32 ,  H01L51/50 ,  H01L51/52 ,  H05B33/10 ,  H05B33/26 ,  H05B33/28

CPC分类号： H01L51/5206 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3281 ,  H01L27/3295 ,  H01L51/5215 ,  Y10S428/917

摘要： According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.

摘要翻译： 根据本发明的一个方面，在注入孔（空穴注入电极，阳极）的一侧，代替传统的导电透明氧化物，涂覆含有硅或氧化硅的导电透明氧化物层的叠层结构作为电极 层如ITO。 此外，根据本发明的另一方面，作为空穴注入电极，施加含有硅或氧化硅的导电性透明氧化物层（其含量不同）的叠层结构。 优选地，在与TFT连接的一侧上的导电层的硅或氧化硅浓度范围为1原子％至6原子％，并且在含有机化合物的层侧的硅或氧化硅浓度范围为 7原子％至15原子％。

公开(公告)号：US08970106B2

公开(公告)日：2015-03-03

申请号：US13360838

申请日：2012-01-30

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Naoya Sakamoto ,  Kengo Akimoto ,  Keiji Sato ,  Tetsunori Maruyama

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Naoya Sakamoto ,  Kengo Akimoto ,  Keiji Sato ,  Tetsunori Maruyama

IPC分类号： H01J1/62 ,  H01J63/04 ,  H01L51/52 ,  H01L27/32

CPC分类号： H01L51/5206 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3281 ,  H01L27/3295 ,  H01L51/5215 ,  Y10S428/917

摘要： According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.

公开(公告)号：US07492090B2

公开(公告)日：2009-02-17

申请号：US10937904

申请日：2004-09-10

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Naoya Sakamoto ,  Kengo Akimoto ,  Keiji Sato ,  Tetsunori Maruyama

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Naoya Sakamoto ,  Kengo Akimoto ,  Keiji Sato ,  Tetsunori Maruyama

IPC分类号： H01J63/04 ,  H01J1/62 ,  H05B33/04

CPC分类号： H01L51/5206 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3281 ,  H01L27/3295 ,  H01L51/5215 ,  Y10S428/917

摘要： According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.

摘要翻译： 根据本发明的一个方面，在注入孔（空穴注入电极，阳极）的一侧，代替传统的导电透明氧化物，涂覆含有硅或氧化硅的导电透明氧化物层的叠层结构作为电极 层如ITO。 此外，根据本发明的另一方面，作为空穴注入电极，施加含有硅或氧化硅的导电性透明氧化物层（其含量不同）的叠层结构。 优选地，在与TFT连接的一侧上的导电层的硅或氧化硅浓度范围为1原子％至6原子％，并且在含有机化合物的层侧的硅或氧化硅浓度范围为 7原子％至15原子％。

公开(公告)号：US20090042326A1

公开(公告)日：2009-02-12

申请号：US12239248

申请日：2008-09-26

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Naoya Sakamoto ,  Kengo Akimoto ,  Keiji Sato ,  Tetsunori Maruyama

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Naoya Sakamoto ,  Kengo Akimoto ,  Keiji Sato ,  Tetsunori Maruyama

IPC分类号： H01L33/00

CPC分类号： H01L51/5206 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3281 ,  H01L27/3295 ,  H01L51/5215 ,  Y10S428/917

摘要： According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.

摘要翻译： 根据本发明的一个方面，在注入孔（空穴注入电极，阳极）的一侧，代替传统的导电透明氧化物，涂覆含有硅或氧化硅的导电透明氧化物层的叠层结构作为电极 层如ITO。 此外，根据本发明的另一方面，作为空穴注入电极，施加含有硅或氧化硅的导电性透明氧化物层（其含量不同）的叠层结构。 优选地，在与TFT连接的一侧上的导电层的硅或氧化硅浓度范围为1原子％至6原子％，并且在含有机化合物的层侧的硅或氧化硅浓度范围为 7原子％至15原子％。

公开(公告)号：US07906429B2

公开(公告)日：2011-03-15

申请号：US11825678

申请日：2007-07-09

申请人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

发明人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

IPC分类号： H01L21/4763

CPC分类号： H01L33/62 ,  C23C14/165 ,  C23C14/3414 ,  H01L21/2855 ,  H01L23/552 ,  H01L27/124 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×1010 dyn/cm2 to 1×1010 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ·cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.

摘要翻译： 实现了具有良好的TFT特性的半导体器件。 通过使用高纯度靶作为靶，使用单一气体氩（Ar）作为溅射气体，将基板温度设定为300℃以下，将溅射气体压力设定为1.0Pa〜3.0 Pa时，膜的膜应力为-1×1010dyn / cm 2〜1×1010dyn / cm 2。 通过这样使用导电膜，其中膜中所含的钠的量等于或小于0.3ppm，优选等于或小于0.1ppm，并且具有低电阻率（等于或小于40μ＆OHgr· cm），作为栅极布线材料和TFT的其它布线的材料，可以提高设置有TFT的半导体器件的操作性能和可靠性。