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    Display unit
    2.
    发明授权
    Display unit 失效
    显示单元

    公开(公告)号：US5812231A

    公开(公告)日：1998-09-22

    申请号：US492247

    申请日：1995-06-19

    申请人： Tetsunobu Kochi ,  Mamoru Miyawaki ,  Shunsuke Inoue ,  Takanori Watanabe

    发明人： Tetsunobu Kochi ,  Mamoru Miyawaki ,  Shunsuke Inoue ,  Takanori Watanabe

    IPC分类号： G02F1/1333 ,  G02F1/133 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/20 ,  G09G3/36 ,  H01L27/12 ,  H01L27/13 ,  H01L29/786 ,  G09G5/00 ,  H01L29/04

    CPC分类号： G09G3/3688 ,  G09G3/3648 ,  H01L27/1203 ,  H01L27/13 ,  G02F1/13454 ,  G02F2001/136281 ,  G09G2310/0248 ,  G09G2310/0297 ,  G09G3/2011

    摘要： A high-density impurity semiconductor region having the same conductivity type as a single-crystal silicon substrate is formed in addition to a main circuit portion of a peripheral circuit on the single-crystal silicon substrate. This semiconductor region is connected to a given potential point directly leading to an electric source. Alternatively, at a part of the peripheral drive circuit, a high-density impurity semiconductor region having a conductivity type reverse to that of the single-crystal silicon substrate is formed, and this semiconductor region is connected to a given potential point directly leading to an electric source. This can solve the problem that photocarriers (electrons and/or holes) caused by the light having not cut off and having entered into the single-crystal silicon region may enter into the peripheral drive circuit through the single-crystal silicon substrate to cause misoperation of the circuit.

    摘要翻译： 除了在单晶硅衬底上的外围电路的主电路部分之外，还形成具有与单晶硅衬底相同的导电类型的高密度杂质半导体区域。 该半导体区域连接到直接通向电源的给定电位点。 或者，在外围驱动电路的一部分，形成具有与单晶硅基板相反的导电类型的高密度杂质半导体区域，并且该半导体区域直接连接到给定的电位点， 电源。 这可以解决由未被切断并进入单晶硅区域的光引起的光载流子（电子和/或空穴）可能通过单晶硅衬底进入外围驱动电路的问题，导致误操作 电路。

    Display unit
    3.
    发明授权
    Display unit 失效
    显示单元

    公开(公告)号：US5757054A

    公开(公告)日：1998-05-26

    申请号：US714439

    申请日：1996-09-16

    申请人： Mamoru Miyawaki ,  Shunsuke Inoue

    发明人： Mamoru Miyawaki ,  Shunsuke Inoue

    IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L27/06 ,  H01L29/04 ,  H01L31/036

    CPC分类号： G02F1/136277 ,  H01L27/0688 ,  G02F1/13454

    摘要： The present invention solves problems as follows: a problem that, since light for displaying enters into a semiconductor substrate, carrier induced by light occurs in the semiconductor substrate, potential of the substrate fluctuates, and hence display characteristics become worse; a problem that, in the semiconductor substrate, voltages are applied to the peripheral driving circuits so as to operate the peripheral driving circuits formed in a single-crystal area, which makes display characteristics worse by the voltages being conducted to the display area through the substrate; and a problem that, in case potentials of adjacent pixels greatly differ, the difference locally changes. For this purpose, in a display unit including an active matrix substrate having an image display portion being provided with a plurality of switches and a driving circuit for supplying driving signals to the switches around the image display portion, an opposing substrate opposing the active matrix substrate and having a transparent electrode, and a liquid crystal material between both of the active matrix substrate and the opposing substrate, heavily doped impurity regions having impurity density heavier than that of the semiconductor substrate are formed in the image display portion, and the heavily doped impurity regions are connected to a fixed potential around the image display portion.

    摘要翻译： 本发明解决了以下问题：由于用于显示的光进入半导体衬底，所以在半导体衬底中产生由光引起的载流子，所以衬底的电位变动，因此显示特性变差; 在半导体基板中，向周边驱动电路施加电压以对形成在单晶区域中的外围驱动电路进行操作的问题在于，通过通过基板向显示区域传导的电压使显示特性变差 ; 以及在相邻像素的电位大大不同的情况下，差异局部变化的问题。 为此，在包括具有图像显示部分的多个开关的有源矩阵基板和用于向图像显示部分周围的开关提供驱动信号的驱动电路的显示单元中，与有源矩阵基板相对的相对基板 并且在有源矩阵基板和相对基板两者之间具有透明电极和液晶材料，在图​​像显示部分中形成具有比半导体基板重的杂质密度的重掺杂杂质区，并且重掺杂杂质 区域连接到图像显示部分周围的固定电位。

    Active matrix LCD device hang a light shielding layer with particular rubbing directions
    6.
    发明授权
    Active matrix LCD device hang a light shielding layer with particular rubbing directions 失效
    有源矩阵LCD装置具有具有特定摩擦方向的遮光层

    公开(公告)号：US5923391A

    公开(公告)日：1999-07-13

    申请号：US491732

    申请日：1995-06-19

    申请人： Takanori Watanabe ,  Mamoru Miyawaki ,  Shunsuke Inoue ,  Tetsunobu Kochi

    发明人： Takanori Watanabe ,  Mamoru Miyawaki ,  Shunsuke Inoue ,  Tetsunobu Kochi

    IPC分类号： G02F1/1337 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1333 ,  G02F1/136

    CPC分类号： G02F1/133512 ,  G02F1/1337 ,  G02F1/134327 ,  G02F2001/13373

    摘要： A liquid crystal display device comprises two parallel substrates holding a liquid crystal material filling space between two parallel substrates, wherein one of the two parallel substrates is provided, for each picture element, with a transparent electrode and a lightshielding layer which has an opening located inside the outer periphery of the transparent electrode as observed from a direction perpendicular to the two substrates, and the lightshielding layer is designed so that the distance from an outer periphery of the transparent electrode to an outer periphery of the opening is set substantially larger on the side where rubbing of one substrate is started than on the side where the rubbing is ended, whereas it is set substantially larger on the side where the rubbing of the other substrate is ended than on the side where the rubbing is started as observed from a direction perpendicular to the two substrates.

    摘要翻译： 一种液晶显示装置，包括：两个平行的基板，其在两个平行的基板之间保持液晶材料填充空间，其中为每个图像提供两个平行基板中的一个，其中透明电极和位于内部的开口的遮光层 从垂直于两个基板的方向观察透明电极的外周，并且设计遮光层，使得从透明电极的外周到开口的外周的距离在侧面被设定得大得多 其中一个基板的摩擦开始于摩擦结束的一侧，而在另一个基板的摩擦结束的一侧被设定得大于从垂直方向观察到的摩擦开始的那一侧 到两个基板。

    Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness
    8.
    发明授权
    Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness 失效
    绝缘体上硅CMOS器件和具有受控基极绝缘体厚度的液晶显示器

    公开(公告)号：US5434441A

    公开(公告)日：1995-07-18

    申请号：US285535

    申请日：1994-08-04

    申请人： Shunsuke Inoue ,  Toru Koizuki ,  Mamoru Miyawaki ,  Shigetoshi Sugawa

    发明人： Shunsuke Inoue ,  Toru Koizuki ,  Mamoru Miyawaki ,  Shigetoshi Sugawa

    IPC分类号： H01L27/12 ,  H01L27/01 ,  H01L27/13

    CPC分类号： H01L27/1203

    摘要： A semiconductor device has an NMOS transistor and a PMOS transistor formed on at least one monocrystal Si region formed in a thin-film Si layer formed on an insulation layer. The thickness T.sub.BOX of the insulation layer on which the NMOS and PMOS transistors are formed, the voltage V.sub.SS of a low-voltage power supply and the voltage V.sub.DD of a high-voltage power supply for the NMOS and PMOS transistors satisfy a relationship expressed by the following inequality:T.sub.BOX >(V.sub.DD -V.sub.SS -K.sub.2)/K.sub.1where K.sub.1 .tbd..epsilon..sub.BOX.sup.-1 (Q.sub.BN +Q.sub.BP), K.sub.2 .tbd..phi..sub.FN +.phi..sub.FP, .epsilon..sub.BOX is the dielectric constant of the base insulation layer, Q.sub.BN and Q.sub.BP are bulk charges when the widths of depletion layers of the NMOS and PMOS transistors are maximized, and .phi..sub.FN and .phi..sub.FP are pseudo Fermi potentials of the NMOS and PMOS transistors.

    摘要翻译： 半导体器件具有形成在形成在绝缘层上的薄膜Si层中形成的至少一个单晶Si区上的NMOS晶体管和PMOS晶体管。 形成NMOS和PMOS晶体管的绝缘层的厚度TBOX，低压电源的电压VSS和NMOS和PMOS晶体管的高压电源的电压VDD满足由 以下不等式：TBOX>（VDD-VSS-K2）/ K1其中K1 3BONDεBOX-1（QBN + QBP），K2 3BOND phi FN + phi FP，εBOX是基极绝缘层的介电常数，QBN和QBP是 当NMOS和PMOS晶体管的耗尽层的宽度最大化时，大量电荷，以及phi FN和phi FP是NMOS和PMOS晶体管的伪费米电位。