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    Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness
    5.
    发明授权
    Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness 失效
    绝缘体上硅CMOS器件和具有受控基极绝缘体厚度的液晶显示器

    公开(公告)号：US5412240A

    公开(公告)日：1995-05-02

    申请号：US274156

    申请日：1994-07-14

    申请人： Shunsuke Inoue ,  Toru Koizumi ,  Mamoru Miyawaki ,  Shigetoshi Sugawa

    发明人： Shunsuke Inoue ,  Toru Koizumi ,  Mamoru Miyawaki ,  Shigetoshi Sugawa

    IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/208 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/092 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L27/01 ,  H01L27/13

    CPC分类号： H01L27/1203

    摘要： A semiconductor device has an NMOS transistor and a PMOS transistor formed on at least one monocrystal Si region formed in a thin-film Si layer formed on an insulation layer. The thickness T.sub.BOX of the insulation layer on which the NMOS and PMOS transistors are formed, the voltage V.sub.SS of a low-voltage power supply and the voltage V.sub.DD of a high-voltage power supply for the NMOS and PMOS transistors satisfy a relationship expressed by the following equation:T.sub.BOX >(V.sub.DD -V.sub.SS -K.sub.2)/K.sub.1where K.sub.1 .tbd..epsilon..sub.BOX (Q.sub.BN +Q.sub.BP), K.sub.2 .tbd.2.PHI..sub.FN +2.PHI..sub.FP -1.03, .epsilon..sub.BOX.sup.-1 is the dielectric constant of the base insulation layer, Q.sub.BN and Q.sub.BP are bulk charges when the widths of depletion layers of the NMOS and PMOS transistors are maximized, and .PHI..sub.FN and .PHI..sub.FP are pseudo Fermi potentials of the NMOS and PMOS transistors.

    摘要翻译： 半导体器件具有形成在形成在绝缘层上的薄膜Si层中形成的至少一个单晶Si区上的NMOS晶体管和PMOS晶体管。 形成NMOS和PMOS晶体管的绝缘层的厚度TBOX，低压电源的电压VSS和NMOS和PMOS晶体管的高压电源的电压VDD满足由 以下等式：TBOX>（VDD-VSS-K2）/ K1其中K1 3BONDεBOX（QBN + QBP），K2 3BOND 2 PHI FN + 2 PHI FP-1.03，εBOX-1是基础绝缘层的介电常数 当NMOS和PMOS晶体管的耗尽层的宽度最大化时，QBN和QBP是体电荷，而PHI FN和PHI FP是NMOS和PMOS晶体管的伪费米电位。

    Solid state image pickup device and manufacturing method therefor
    6.
    发明授权
    Solid state image pickup device and manufacturing method therefor 有权
    固态摄像装置及其制造方法

    公开(公告)号：US08395193B2

    公开(公告)日：2013-03-12

    申请号：US13364601

    申请日：2012-02-02

    申请人： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H01L29/76

    CPC分类号： H01L27/14806 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035281 ,  Y02E10/50

    摘要： A MOS-type solid-state image pickup device is provided on a semiconductor substrate and includes a photoelectric conversion unit having a first semiconductor region, a second semiconductor region, and a third semiconductor region. A transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region, and an amplifying MOS transistor has a gate electrode connected to the fourth semiconductor region. In addition, a fifth semiconductor region is continuously disposed to the second semiconductor region, under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.

    摘要翻译： MOS型固态摄像装置设置在半导体衬底上，并包括具有第一半导体区域，第二半导体区域和第三半导体区域的光电转换单元。 传输栅电极设置在绝缘膜上并将载体从第二半导体区传送到第四半导体区，放大MOS晶体管具有与第四半导体区连接的栅电极。 另外，第五半导体区域在栅极下方连续地设置到第二半导体区域。 第三半导体区域的整个表面被绝缘膜覆盖，并且与传输栅极横向相对的第三半导体区域的侧部与第一半导体区域接触。

    Solid-state image pickup device and method of resetting the same
    7.
    发明授权
    Solid-state image pickup device and method of resetting the same 有权
    固态摄像装置及其复位方法

    公开(公告)号：US08120682B2

    公开(公告)日：2012-02-21

    申请号：US12539782

    申请日：2009-08-12

    申请人： Toru Koizumi ,  Shigetoshi Sugawa ,  Tetsunobu Kochi

    发明人： Toru Koizumi ,  Shigetoshi Sugawa ,  Tetsunobu Kochi

    IPC分类号： H04N3/14 ,  H04N5/335

    CPC分类号： H04N5/3597 ,  H04N5/238 ,  H04N5/353

    摘要： A solid-state image pickup device comprises for each pixel a photoelectric converter PD, an input terminal FD of a signal amplifier and a transfer switch TX for transferring an optical signal from the photoelectric converter to the input terminal. The device additionally comprises means for resetting the photoelectric converter by opening the transfer switch TX under a condition of holding the voltage of the input terminal FD to a fixed high level before storing the optical signal in the photoelectric converter PD. With this arrangement, any residual electric charge in the photoelectric converter can be eliminated without paying the cost of reducing the manufacturing yield and degrading the chip performance.

    摘要翻译： 固态图像拾取装置包括每个像素光电转换器PD，信号放大器的输入端子FD和用于将光信号从光电转换器传送到输入端子的转移开关TX。 该装置还包括用于在将光信号存储在光电转换器PD中之前将输入端子FD的电压保持在固定高电平的状态下打开转换开关TX来复位光电转换器的装置。 通过这种布置，可以消除光电转换器中的任何剩余电荷，而不需要降低制造成品率和降低芯片性能的成本。

    SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREFOR
    8.
    发明申请
    SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREFOR 有权
    固态图像拾取器件及其制造方法

    公开(公告)号：US20100155787A1

    公开(公告)日：2010-06-24

    申请号：US12716488

    申请日：2010-03-03

    申请人： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tesunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tesunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H01L27/148

    CPC分类号： H01L27/14806 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035281 ,  Y02E10/50

    摘要： A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a transfer MOS transistor having a gate electrode disposed on an insulation film and transferring a charge carrier from a fourth semiconductor region. In addition, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region and under the gate electrode, and is disposed apart from the insulation film under the gate electrode of the transfer MOS transistor.

    摘要翻译： 在半导体衬底上的MOS型固体摄像器件包括具有第一导电类型的第一半导体区域，第二导电类型的第二半导体区域，第一导电类型的第三半导体区域的光电转换单元 以及具有设置在绝缘膜上并从第四半导体区域传送电荷载流子的栅电极的转移MOS晶体管。 此外，具有栅电极的放大MOS晶体管连接到第四半导体区域，并且第二导电类型的第五半导体区域连续地设置到第二半导体区域和栅电极下方，并且与绝缘体 在转移MOS晶体管的栅极电极下方。

    Solid-state image pickup element
    9.
    发明授权
    Solid-state image pickup element 失效
    固态摄像元件

    公开(公告)号：US06831685B1

    公开(公告)日：2004-12-14

    申请号：US09316947

    申请日：1999-05-24

    申请人： Isamu Ueno ,  Shigetoshi Sugawa ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Isamu Ueno ,  Shigetoshi Sugawa ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H04N964

    CPC分类号： H04N5/3698 ,  H04N5/3595 ,  H04N5/376 ,  H04N5/378

    摘要： This invention is to provide a solid-state image pickup element including a sensor unit including a plurality of lines of photoelectric conversion units for generating charges from received light by photoelectric conversion, a memory unit including a plurality of lines of storage units for storing signals from the plurality of lines of photoelectric conversion units, a transfer unit for transferring a signal from the sensor unit to the memory unit, a control unit for causing storage units of an arbitrary block in the memory unit to output an image signal from the photoelectric conversion units and causing the photoelectric conversion units corresponding to the storage units of the arbitrary block to output a noise signal, and a subtracting unit for calculating a difference between the image signal and the noise signal.

    摘要翻译： 本发明提供一种固态摄像元件，包括：传感器单元，包括多条光电转换单元，用于通过光电转换从接收的光产生电荷;存储单元，包括多行存储单元，用于存储来自 多条光电转换单元，用于将信号从传感器单元传送到存储单元的转移单元，用于使存储单元中的任意块的存储单元输出来自光电转换单元的图像信号的控制单元 并且使与所述任意块的存储单元对应的光电转换单元输出噪声信号，以及用于计算图像信号和噪声信号之间的差的减法单元。