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公开(公告)号:US11685650B2
公开(公告)日:2023-06-27
申请号:US16983141
申请日:2020-08-03
Applicant: SiTime Corporation
Inventor: Aaron Partridge , Markus Lutz , Pavan Gupta
IPC: H01L23/051 , B81C1/00 , H01L41/113 , B81B7/00
CPC classification number: B81C1/00277 , B81B7/007 , B81B7/0035 , B81B7/0058 , B81C1/00269 , B81C1/00301 , H01L23/051 , H01L41/1136 , B81B2201/0271 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C2201/0171 , B81C2203/031 , B81C2203/036 , B81C2203/037 , B81C2203/038 , H01L2924/0002 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.
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公开(公告)号:US11370656B2
公开(公告)日:2022-06-28
申请号:US17143119
申请日:2021-01-06
Applicant: SiTime Corporation
Inventor: Pavan Gupta , Aaron Partridge , Markus Lutz
IPC: B81B7/00 , B81C1/00 , H01L41/113 , H01L23/34 , H01L23/498 , H01L23/31
Abstract: A low-profile packaging structure for a microelectromechanical-system (MEMS) resonator system includes an electrical lead having internal and external electrical contact surfaces at respective first and second heights within a cross-sectional profile of the packaging structure and a die-mounting surface at an intermediate height between the first and second heights. A resonator-control chip is mounted to the die-mounting surface of the electrical lead such that at least a portion of the resonator-control chip is disposed between the first and second heights and wire-bonded to the internal electrical contact surface of the electrical lead. A MEMS resonator chip is mounted to the resonator-control chip in a stacked die configuration and the MEMS resonator chip, resonator-control chip and internal electrical contact and die-mounting surfaces of the electrical lead are enclosed within a package enclosure that exposes the external electrical contact surface of the electrical lead at an external surface of the packaging structure.
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公开(公告)号:US20210221678A1
公开(公告)日:2021-07-22
申请号:US16983141
申请日:2020-08-03
Applicant: SiTime Corporation
Inventor: Aaron Partridge , Markus Lutz , Pavan Gupta
IPC: B81C1/00 , H01L41/113 , H01L23/051 , B81B7/00
Abstract: A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.
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公开(公告)号:US10099917B2
公开(公告)日:2018-10-16
申请号:US15686480
申请日:2017-08-25
Applicant: SiTime Corporation
Inventor: Aaron Partridge , Markus Lutz , Pavan Gupta
IPC: H01L23/051 , B81C1/00 , B81B7/00 , H01L41/113
Abstract: After forming a microelectromechanical-system (MEMS) resonator within a silicon-on-insulator (SOI) wafer, a complementary metal oxide semiconductor (CMOS) cover wafer is bonded to the SOI wafer via one or more eutectic solder bonds that implement respective paths of electrical conductivity between the two wafers and hermetically seal the MEMS resonator within a chamber.
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公开(公告)号:US20230391611A1
公开(公告)日:2023-12-07
申请号:US18206520
申请日:2023-06-06
Applicant: SiTime Corporation
Inventor: Pavan Gupta , Aaron Partridge , Markus Lutz
IPC: B81B7/00 , B81C1/00 , H10N30/30 , H01L23/34 , H01L23/498
CPC classification number: B81B7/0083 , B81C1/0023 , H10N30/302 , H01L23/34 , H01L23/498 , B81B7/007 , B81C1/00301 , B81B7/0077 , B81C1/00333 , B81C1/00341 , H01L2924/181 , H01L2224/48247 , H01L2924/01019 , H01L2224/48091 , H01L2224/73265 , H01L2924/1461 , B81B2201/0271 , B81C2203/0154 , H01L23/3107
Abstract: A low-profile packaging structure for a microelectromechanical-system (MEMS) resonator system includes an electrical lead having internal and external electrical contact surfaces at respective first and second heights within a cross-sectional profile of the packaging structure and a die-mounting surface at an intermediate height between the first and second heights. A resonator-control chip is mounted to the die-mounting surface of the electrical lead such that at least a portion of the resonator-control chip is disposed between the first and second heights and wire-bonded to the internal electrical contact surface of the electrical lead. A MEMS resonator chip is mounted to the resonator-control chip in a stacked die configuration and the MEMS resonator chip, resonator-control chip and internal electrical contact and die-mounting surfaces of the electrical lead are enclosed within a package enclosure that exposes the external electrical contact surface of the electrical lead at an external surface of the packaging structure.
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公开(公告)号:US09758371B2
公开(公告)日:2017-09-12
申请号:US15242437
申请日:2016-08-19
Applicant: SiTime Corporation
Inventor: Aaron Partridge , Markus Lutz , Pavan Gupta
IPC: H01L23/051 , B81C1/00 , B81B7/00 , H01L41/113
CPC classification number: B81C1/00277 , B81B7/0035 , B81B7/0058 , B81B7/007 , B81B2201/0271 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C1/00269 , B81C1/00301 , B81C2201/0171 , B81C2203/031 , B81C2203/036 , B81C2203/037 , B81C2203/038 , H01L23/051 , H01L41/1136 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.
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公开(公告)号:US20150123220A1
公开(公告)日:2015-05-07
申请号:US14597825
申请日:2015-01-15
Applicant: SiTime Corporation
Inventor: Pavan Gupta , Aaron Partridge , Markus Lutz
CPC classification number: B81B7/0083 , B81B7/007 , B81B7/0077 , B81B2201/0271 , B81B2207/07 , B81B2207/094 , B81C1/0023 , B81C1/00301 , B81C1/00333 , B81C1/00341 , B81C2201/016 , B81C2203/0118 , B81C2203/0154 , H01L23/3107 , H01L23/34 , H01L23/498 , H01L2224/48091 , H01L2224/48245 , H01L2224/48247 , H01L2224/73265 , H01L2924/01019 , H01L2924/10253 , H01L2924/1461 , H01L2924/181 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
Abstract: A low-profile packaging structure for a microelectromechanical-system (MEMS) resonator system includes an electrical lead having internal and external electrical contact surfaces at respective first and second heights within a cross-sectional profile of the packaging structure and a die-mounting surface at an intermediate height between the first and second heights. A resonator-control chip is mounted to the die-mounting surface of the electrical lead such that at least a portion of the resonator-control chip is disposed between the first and second heights and wire-bonded to the internal electrical contact surface of the electrical lead. A MEMS resonator chip is mounted to the resonator-control chip in a stacked die configuration and the MEMS resonator chip, resonator-control chip and internal electrical contact and die-mounting surfaces of the electrical lead are enclosed within a package enclosure that exposes the external electrical contact surface of the electrical lead at an external surface of the packaging structure.
Abstract translation: 用于微机电系统(MEMS)谐振器系统的薄型封装结构包括电引线,其在封装结构的横截面轮廓内的相应的第一和第二高度处具有内部和外部电接触表面,并且模具安装表面 第一和第二高度之间的中间高度。 谐振器控制芯片安装到电引线的管芯安装表面,使得谐振器控制芯片的至少一部分设置在第一和第二高度之间并且引线接合到电气的内部电接触表面 铅。 MEMS谐振器芯片以堆叠的管芯配置安装到谐振器控制芯片,并且电机的谐振器芯片,谐振器控制芯片和内部电接触和管芯安装表面被封装在暴露外部的封装外壳内 电气引线的电接触表面在包装结构的外表面。
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公开(公告)号:US08941247B1
公开(公告)日:2015-01-27
申请号:US14191978
申请日:2014-02-27
Applicant: SiTime Corporation
Inventor: Pavan Gupta , Aaron Partridge , Markus Lutz
CPC classification number: B81B7/0083 , B81B7/007 , B81B7/0077 , B81B2201/0271 , B81B2207/07 , B81B2207/094 , B81C1/0023 , B81C1/00301 , B81C1/00333 , B81C1/00341 , B81C2201/016 , B81C2203/0118 , B81C2203/0154 , H01L23/3107 , H01L23/34 , H01L23/498 , H01L2224/48091 , H01L2224/48245 , H01L2224/48247 , H01L2224/73265 , H01L2924/01019 , H01L2924/10253 , H01L2924/1461 , H01L2924/181 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
Abstract: In a packaging structure for a microelectromechanical-system (MEMS) resonator system, a resonator-control chip is mounted on a lead frame having a plurality of electrical leads, including electrically coupling a first contact on a first surface of the resonator-control chip to a mounting surface of a first electrical lead of the plurality of electrical leads through a first electrically conductive bump. A MEMS resonator chip is mounted to the first surface of the resonator-control chip, including electrically coupling a contact on a first surface of the MEMS resonator chip to a second contact on the first surface of the resonator-control chip through a second electrically conductive bump. The MEMS resonator chip, resonator-control chip and mounting surface of the first electrical lead are enclosed within a package enclosure that exposes a contact surface of the first electrical lead at an external surface of the packaging structure.
Abstract translation: 在微机电系统(MEMS)谐振器系统的封装结构中,谐振器控制芯片安装在具有多个电引线的引线框架上,引线框架包括将谐振器控制芯片的第一表面上的第一触点电耦合到 所述多个电引线中的第一电引线的安装表面通过第一导电凸块。 MEMS谐振器芯片安装在谐振器控制芯片的第一表面上,包括将MEMS谐振器芯片的第一表面上的触点与谐振器控制芯片的第一表面上的第二触点电耦合通过第二导电 磕碰。 MEMS谐振器芯片,谐振器控制芯片和第一电引线的安装表面封装在封装外壳内,该封装外壳暴露出封装结构的外表面处的第一电引线的接触表面。
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公开(公告)号:US20240002218A1
公开(公告)日:2024-01-04
申请号:US18130837
申请日:2023-04-04
Applicant: SiTime Corporation
Inventor: Aaron Partridge , Markus Lutz , Pavan Gupta
IPC: B81C1/00 , H01L23/051 , H10N30/30 , B81B7/00
CPC classification number: B81C1/00277 , B81C1/00301 , H01L23/051 , H10N30/306 , B81B7/007 , B81B7/0058 , B81C1/00269 , B81B7/0035 , H01L2924/0002 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C2201/0171 , B81C2203/031 , B81C2203/036 , B81C2203/037 , B81C2203/038 , B81B2201/0271
Abstract: A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.
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公开(公告)号:US10766768B2
公开(公告)日:2020-09-08
申请号:US16565876
申请日:2019-09-10
Applicant: SiTime Corporation
Inventor: Aaron Partridge , Markus Lutz , Pavan Gupta
IPC: H01L21/46 , B81C1/00 , H01L41/113 , H01L23/051 , B81B7/00
Abstract: A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.
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