公开(公告)号：US20100312926A1

公开(公告)日：2010-12-09

申请号：US12477799

申请日：2009-06-03

申请人： Siamak Arya ,  Fong-Long Lin ,  Thao Thach Tran

发明人： Siamak Arya ,  Fong-Long Lin ,  Thao Thach Tran

IPC分类号： G06F3/00 ,  H04B7/005

CPC分类号： H04M1/72527 ,  H04M1/2535

摘要： A USB switching device can selectively connect between a removable card and a mobile wireless communication device and a computer. The removable card has a first port; the mobile wireless communicating device has a second port while the computer has a third port. The switching device comprises a first full duplex switch having an input and a first output and a second output, and a select port for switching the connection of the input to the first output and the connection of the input to the second output. The switching device further comprises a second full duplex switch having an input and a first output and a second output, and a select port for switching the connection of the input to the first output and the connection of the input to the second output. The switching device further comprises a third full duplex switch having an input and a first output and a second output, and a select port for switching the connection of the input to the first output and the connection of the input to the second output. The input of the first switch is connected to the first port. The input of the second switch is connected to the second port. The input of the third switch is connected to the third port. The first output of the first switch is connected to the second output of the second switch. The second output of the first switch is connected to the first output of the third switch. Finally, the first output of the second switch is connected to the second output of the third switch.

摘要翻译： USB切换设备可以选择性地连接可移动卡与移动无线通信设备和计算机之间。 可拆卸卡具有第一端口; 移动无线通信设备具有第二端口，而计算机具有第三端口。 开关装置包括具有输入和第一输出和第二输出的第一全双工开关，以及用于将输入连接到第一输出和将输入连接到第二输出的选择端口。 开关装置还包括具有输入和第一输出和第二输出的第二全双工开关，以及用于将输入连接到第一输出和将输入连接到第二输出的选择端口。 开关装置还包括具有输入和第一输出和第二输出的第三全双工开关，以及用于将输入连接到第一输出和将输入连接到第二输出的选择端口。 第一开关的输入连接到第一端口。 第二开关的输入连接到第二端口。 第三开关的输入连接到第三端口。 第一开关的第一输出连接到第二开关的第二输出端。 第一开关的第二输出端连接到第三开关的第一输出端。 最后，第二开关的第一输出连接到第三开关的第二输出端。

公开(公告)号：US07724568B2

公开(公告)日：2010-05-25

申请号：US12040707

申请日：2008-02-29

申请人： Siamak Arya ,  Fong-Long Lin

发明人： Siamak Arya ,  Fong-Long Lin

IPC分类号： G11C16/04

CPC分类号： G11C16/10 ,  G11C16/0483

摘要： A memory device comprises a non-volatile electrically alterable memory which is susceptible to read disturbance. The device has a control circuit for controlling the operation of the non-volatile memory. The device further has a first volatile cache memory. The first volatile cache memory is connected to the control circuit and is for storing data to be written to or read from the non-volatile memory, as cache for the memory device. The device further has a second volatile cache memory. The second volatile cache memory is connected to the control circuit and is for storing data read from the non-volatile memory as read cache for the memory device. Finally the control circuit reads data from the second volatile cache memory in the event of a data miss from the first volatile cache memory, and reads data from the non-volatile memory in the event of a data miss from the first and second volatile cache memories.

摘要翻译： 存储器件包括易受读取干扰的非易失性电可变存储器。 该装置具有用于控制非易失性存储器的操作的控制电路。 该设备还具有第一易失性缓存存储器。 第一易失性高速缓冲存储器连接到控制电路，并且用于存储要写入或从非易失性存储器读取的数据作为存储器件的高速缓存。 该设备还具有第二易失性缓存存储器。 第二易失性高速缓存存储器连接到控制电路，用于存储从非易失性存储器读取的数据作为存储器件的读高速缓存。 最后，在来自第一易失性高速缓存存储器的数据未命中的情况下，控制电路从第二易失性高速缓冲存储器读取数据，并且在从第一和第二易失性高速缓存存储器发生数据丢失的情况下从非易失性存储器读取数据 。

公开(公告)号：US20100125444A1

公开(公告)日：2010-05-20

申请号：US12272710

申请日：2008-11-17

申请人： Siamak Arya ,  Fong-Long Lin

发明人： Siamak Arya ,  Fong-Long Lin

IPC分类号： G06F9/455 ,  G06F12/00

CPC分类号： G06F12/0246 ,  G06F2212/7203

摘要： A NOR emulating memory device has a memory controller with a first bus for receiving a NOR command signal, and for servicing a read operation from a desired address in a NOR memory. The memory controller has a second bus for communicating with a NAND memory in a NAND memory protocol, and a third bus for communicating with a RAM memory. A NAND memory is connected to the second bus. The NAND memory has an array of memory cells divided into a plurality of pages with each page divided into a plurality of sectors, with each sector having a plurality of bits. The NAND memory further has a page buffer for storing a page of bits read from the array during the read operation of the NAND memory. A RAM memory is connected to the third bus. The memory controller has a NOR memory for storing program code for initiating the operation of the memory controller, and for receiving NOR commands from the first bus and issuing NAND protocol commands on the second bus, in response thereto, to emulate the operation of a NOR memory device. The program code causes the memory controller to read a first sector of bits from the page buffer of the NAND memory and to write the sector of bits into the RAM memory, wherein the first sector contains the location of the desired address, and supplying data from said RAM memory in response to the read operation.

摘要翻译： NOR仿真存储器件具有存储器控制器，其具有用于接收NOR命令信号的第一总线，并用于从NOR存储器中的期望地址服务于读取操作。 存储器控制器具有用于与NAND存储器协议中的NAND存储器通信的第二总线，以及用于与RAM存储器通信的第三总线。 NAND存储器连接到第二总线。 NAND存储器具有分成多个页面的存储器单元的阵列，每个页被分成多个扇区，每个扇区具有多个位。 NAND存储器还具有用于在NAND存储器的读取操作期间存储从阵列读取的位的页面的页面缓冲器。 RAM存储器连接到第三总线。 存储器控制器具有NOR存储器，用于存储用于启动存储器控制器的操作的程序代码，并且用于从第一总线接收NOR命令并在第二总线上发出NAND协议命令，以响应于此来仿真NOR的操作 存储设备。 程序代码使得存储器控制器从NAND存储器的页面缓冲器中读取第一个比特位，并将比特扇区写入RAM存储器，其中第一个扇区包含所需地址的位置，并从 所述RAM存储器响应于读操作。

公开(公告)号：US20100088459A1

公开(公告)日：2010-04-08

申请号：US12246327

申请日：2008-10-06

申请人： Siamak Arya ,  Fong-Long Lin

发明人： Siamak Arya ,  Fong-Long Lin

IPC分类号： G06F12/02

CPC分类号： G06F12/122 ,  G06F3/061 ,  G06F3/0656 ,  G06F3/068 ,  G06F12/0866 ,  G06F12/126 ,  G06F2212/1021 ,  G06F2212/2022 ,  Y02D10/13

摘要： A non-volatile storage system comprises a hard disk drive (HDD) having a first capacity for storing information therein in a plurality of blocks. The storage system also comprises a non-volatile solid state memory (SSD) having a second capacity, less than the first capacity, for storing information therein. Finally, the storage system comprises a controller having a volatile memory and for controlling the read operation of the HDD and the read/write operation of the SSD. The controller stores in the volatile memory the address of read blocks from the HDD in a first period of time and determines a plurality of the most frequently read blocks in the first period of time, The controller then causes the SSD to store information from the most frequently read blocks from the HDD, and thereafter causes information to be read from the SSD when the storage system is requested to access information from the most frequently read blocks. The controller resets the identity of the most frequently read blocks in the volatile memory after a second period of time, where the second period of time is longer than said first period of time.

摘要翻译： 非易失性存储系统包括具有用于在多个块中存储信息的第一容量的硬盘驱动器（HDD）。 存储系统还包括具有小于第一容量的第二容量的用于在其中存储信息的非易失性固态存储器（SSD）。 最后，存储系统包括具有易失性存储器并用于控制HDD的读取操作和SSD的读/写操作的控制器。 该控制器在第一时间段内将来自HDD的读取块的地址存储在易失性存储器中，并且在第一时间段内确定多个最频繁读取的块，然后控制器使SSD从最多存储信息 经常从HDD读取块，此后当请求存储系统从最频繁读取的块访问信息时，从SSD读取信息。 控制器在第二时间段之后复位易失性存储器中最频繁读取的块的身份，其中第二时间段比第一时间段长。

公开(公告)号：US20090219760A1

公开(公告)日：2009-09-03

申请号：US12040707

申请日：2008-02-29

申请人： Siamak Arya ,  Fong-Long Lin

发明人： Siamak Arya ,  Fong-Long Lin

IPC分类号： G11C16/00 ,  G11C14/00

CPC分类号： G11C16/10 ,  G11C16/0483

摘要： A memory device comprises a non-volatile electrically alterable memory which is susceptible to read disturbance. The device has a control circuit for controlling the operation of the non-volatile memory. The device further has a first volatile cache memory. The first volatile cache memory is connected to the control circuit and is for storing data to be written to or read from the non-volatile memory, as cache for the memory device. The device further has a second volatile cache memory. The second volatile cache memory is connected to the control circuit and is for storing data read from the non-volatile memory as read cache for the memory device. Finally the control circuit reads data from the second volatile cache memory in the event of a data miss from the first volatile cache memory, and reads data from the non-volatile memory in the event of a data miss from the first and second volatile cache memories.

摘要翻译： 存储器件包括易受读取干扰的非易失性电可变存储器。 该装置具有用于控制非易失性存储器的操作的控制电路。 该设备还具有第一易失性缓存存储器。 第一易失性高速缓冲存储器连接到控制电路，并且用于存储要写入或从非易失性存储器读取的数据作为存储器件的高速缓存。 该设备还具有第二易失性缓存存储器。 第二易失性高速缓存存储器连接到控制电路，用于存储从非易失性存储器读取的数据作为存储器件的读高速缓存。 最后，在来自第一易失性高速缓存存储器的数据未命中的情况下，控制电路从第二易失性高速缓冲存储器读取数据，并且在从第一和第二易失性高速缓存存储器发生数据丢失的情况下从非易失性存储器读取数据 。

公开(公告)号：US06883075B2

公开(公告)日：2005-04-19

申请号：US10052327

申请日：2002-01-17

申请人： Fong-Long Lin ,  Wei Xu

发明人： Fong-Long Lin ,  Wei Xu

IPC分类号： G06F12/00 ,  G06F13/00 ,  G06F15/78 ,  G06F21/62 ,  G06F21/74 ,  G06F21/79

CPC分类号： G06F21/6209 ,  G06F15/7814 ,  G06F21/74 ,  G06F21/79 ,  G06F2221/2105 ,  G06F2221/2141 ,  G06F2221/2143

摘要： A single integrated circuit microcontroller 10 including embedded erasable/programmable non-volatile memory 12 having a read protection. Microcontroller 10 can operate within a special mode in which external circuits may access memory 12 by use of input/output pins 18. When microcontroller 10 activates this special mode, a read protection flag 13 within memory 12 is checked. The read protection flag 13 may be set during production of the microcontroller 10 after instructional data or firmware has been installed onto memory 12. If the read protection flag 13 has been set, the contents of memory 12 are erased or reprogrammed prior to allowing access to memory 12. In this manner, external circuits cannot access instructional data or firmware that is stored in memory 12.

摘要翻译： 包括具有读取保护的嵌入式可擦除/可编程非易失性存储器12的单个集成电路微控制器10。 微控制器10可以在外部电路可以通过使用输入/输出引脚18访问存储器12的特殊模式中操作。 当微控制器10激活该特殊模式时，检查存储器12内的读保护标志13。 读取保护标志13可以在将指令数据或固件安装到存储器12上之后在微控制器10的生产期间被设置。 如果已经设置了读取保护标志13，则在允许访问存储器12之前，存储器12的内容被擦除或重新编程。 以这种方式，外部电路不能访问存储在存储器12中的指令数据或固件。

公开(公告)号：US06874069B2

公开(公告)日：2005-03-29

申请号：US10206635

申请日：2002-07-26

申请人： Fong-Long Lin ,  Xiangyang Teng

发明人： Fong-Long Lin ,  Xiangyang Teng

IPC分类号： G06F12/14

CPC分类号： G06F12/1433

摘要： A single integrated circuit microcontroller 10 includes an embedded erasable/programmable non-volatile memory 12 having a read protection capability. Microcontroller 10 can operate within a special mode in which external circuits may access memory 12 by use of input/output pins 18. When microcontroller 10 activates this special mode, a read protection flag 13 within memory 12 is checked. The read protection flag 13 may be set during production of the microcontroller 10 after instructional data or firmware has been installed onto memory 12. If the read protection flag 13 has been set, only certain portions of the memory 12 may be read, depending upon the value of the read protection flag 13.

摘要翻译： 单个集成电路微控制器10包括具有读取保护能力的嵌入式可擦除/可编程非易失性存储器12。 微控制器10可以在外部电路可以通过使用输入/输出引脚18访问存储器12的特殊模式下操作。当微控制器10激活该特殊模式时，检查存储器12内的读保护标志13。 读取保护标志13可以在将指令数据或固件安装到存储器12之后在微控制器10的生产期间被设置。如果已经设置了读保护标志13，则只能读取存储器12的某些部分，这取决于 读取保护标志13的值。

公开(公告)号：US07728361B2

公开(公告)日：2010-06-01

申请号：US12113881

申请日：2008-05-01

申请人： Kangping Zhang ,  Fong-Long Lin

发明人： Kangping Zhang ,  Fong-Long Lin

IPC分类号： H01L27/10 ,  H01L21/82 ,  H01L23/48

CPC分类号： G01R31/2884

摘要： In the present invention, a method of testing an unpackaged integrated circuit die is disclosed. The die has a plurality of first input/output pads. A serial electrical connection is fabricated in the die between all of the input/output pads of the die which are not of the first plurality (hereinafter: “second plurality”). The second plurality has a start input and an end output. The start input of the second plurality is connected to the output of one selected input buffer of the input pad of the first plurality and the end output of the second plurality is also connected to the input of one selected output pad of the first plurality. The second plurality of input/output pads are tested through selected input pad and selected output pad of the first plurality without electrical probes making contact during the wafer sort. The present invention also relates to an integrated circuit die so fabricated as to facilitate testing.

摘要翻译： 在本发明中，公开了一种无包装集成电路管芯的测试方法。 管芯具有多个第一输入/输出焊盘。 在管芯中的不是第一多个（以下称为“第二多个”）的所有管芯的输入/输出焊盘之间在管芯中制造串联电连接。 第二组具有开始输入和结束输出。 第二多个的开始输入连接到第一多个输入焊盘的一个选择的输入缓冲器的输出，并且第二多个的输出端的输出也连接到第一多个的一个选择的输出焊盘的输入。 通过所选择的输入焊盘和第一组的选定的输出焊盘来测试第二组输入/输出焊盘，而不需要在晶片分类期间接触电探针。 本发明还涉及一种如此制造的便于测试的集成电路管芯。

公开(公告)号：US07519754B2

公开(公告)日：2009-04-14

申请号：US11637419

申请日：2006-12-11

申请人： Jeremy Wang ,  Fong-Long Lin ,  Bing Yeh

发明人： Jeremy Wang ,  Fong-Long Lin ,  Bing Yeh

IPC分类号： G06F13/00

CPC分类号： G06F12/0246 ,  G06F12/0638 ,  G06F12/0866 ,  G06F2212/2022 ,  G06F2212/225 ,  Y02D10/13

摘要： A NOR emulating device using a controller and NAND memories can be used in a computer system in placed of the main memory or in place of the BIOS NOR memory. Thus, the emulating device can function as a bootable memory. In addition, the device can act as a cache to the hard disk drive. Further, with the addition of an MP3 player controller into the device, the device can function as a stand alone audio playback device, even while the PC is turned off or is in a hibernating mode. Finally with the MP3 player controller, the device can access additional audio data stored on the hard drive, again with the PC in an off mode or a hibernating mode. Finally, the device can function to operate the disk drive, even while the PC is off or is in a hibernating mode, and control USB ports attached thereto.

摘要翻译： 使用控制器和NAND存储器的NOR仿真装置可以在主存储器中放置的计算机系统中使用或代替BIOS NOR存储器。 因此，仿真装置可以用作可引导存储器。 此外，该设备可以充当硬盘驱动器的缓存。 此外，通过在设备中添加MP3播放器控制器，即使在PC关闭或处于休眠模式时，该设备也可以作为独立的音频播放设备。 最后使用MP3播放器控制器，设备可以访问存储在硬盘驱动器上的附加音频数据，同时PC处于关闭模式或休眠模式。 最后，即使在PC关闭或处于休眠模式，并且控制连接到其上的USB端口，该设备也可以用于操作磁盘驱动器。

公开(公告)号：US20100226170A1

公开(公告)日：2010-09-09

申请号：US12398913

申请日：2009-03-05

申请人： Fong-Long Lin ,  Tingniu Deng

发明人： Fong-Long Lin ,  Tingniu Deng

IPC分类号： G11C16/02 ,  G11C16/06 ,  G11C5/14

CPC分类号： G11C5/141 ,  G11C5/143 ,  G11C5/144 ,  G11C16/22

摘要： An electrically programmable non-volatile memory device comprises a memory circuit which includes an array of non-volatile memory cells. Each memory cell is capable of being programmed. A programming circuit can generate a programming signal to program one or more of the memory cells. A voltage detector circuit is connected to a voltage source which outputs a certain voltage. The voltage detector circuit detects when the certain voltage has decreased to a certain level, and in response thereto, the voltage detector provides an output signal to the memory controller to complete the on-going programming command sequence and to power down itself. An auxiliary voltage source maintains voltage to the memory circuit for a period of time sufficient for the programming circuit to complete the programming of the one or more of the memory cells, when the certain voltage is at or below the certain level.

摘要翻译： 一种电可编程的非易失性存储器件包括一个包括非易失性存储器单元阵列的存储器电路。 每个存储单元都能被编程。 编程电路可以产生编程信号以编程一个或多个存储器单元。 电压检测器电路连接到输出一定电压的电压源。 电压检测器电路检测某一电压何时降低到一定水平，并且响应于此，电压检测器向存储器控制器提供输出信号以完成正在进行的编程命令序列并使其自身断电。 当一定电压处于或低于某一水平时，辅助电压源将电压维持到存储器电路一段足以使编程电路完成一个或多个存储器单元的编程的时间。