公开(公告)号：US20100001301A1

公开(公告)日：2010-01-07

申请号：US11719426

申请日：2005-10-21

申请人： Siegfried F. Karg ,  Hajime Nakamura ,  Heike E. Riel ,  Walter H. Riess ,  Constance Rost-Bietsch

发明人： Siegfried F. Karg ,  Hajime Nakamura ,  Heike E. Riel ,  Walter H. Riess ,  Constance Rost-Bietsch

IPC分类号： H01L51/52 ,  H01L21/28

CPC分类号： H01L51/5281 ,  H01L51/5231 ,  H01L51/5253 ,  H01L51/5262 ,  H01L51/5275

摘要： The present invention is directed to an organic light emitting device (OLED) including a first electrode, a second electrode, at least one layer of organic material arranged between the first electrode and the second electrode, and a dielectric capping layer arranged on the second electrode opposite to the first electrode, wherein the capping layer comprises an outer surface, opposite to the second electrode, for emission of light generated in the at least one layer of organic material. The capping layer has the effect that a reflectance of external light is reduced whereas outcoupling of the light generated in the at least one layer of organic material through the capping layer is increased.

摘要翻译： 本发明涉及一种有机发光器件（OLED），其包括第一电极，第二电极，布置在第一电极和第二电极之间的至少一层有机材料，以及布置在第二电极上的电介质覆盖层 与所述第一电极相对，其中所述封盖层包括与所述第二电极相对的外表面，用于发射在所述至少一层有机材料中产生的光。 封盖层具有外部光的反射率降低的效果，而通过覆盖层在至少一层有机材料中产生的光的外耦合增加。

公开(公告)号：US08212269B2

公开(公告)日：2012-07-03

申请号：US11719426

申请日：2005-10-21

申请人： Siegfried F. Karg ,  Hajime Nakamura ,  Heike E. Riel ,  Walter H. Riess ,  Constance Rost-Bietsch

发明人： Siegfried F. Karg ,  Hajime Nakamura ,  Heike E. Riel ,  Walter H. Riess ,  Constance Rost-Bietsch

IPC分类号： H01L33/00

CPC分类号： H01L51/5281 ,  H01L51/5231 ,  H01L51/5253 ,  H01L51/5262 ,  H01L51/5275

摘要： The present invention is directed to an organic light emitting device (OLED) including a first electrode, a second electrode, at least one layer of organic material arranged between the first electrode and the second electrode, and a dielectric capping layer arranged on the second electrode opposite to the first electrode, wherein the capping layer comprises an outer surface, opposite to the second electrode, for emission of light generated in the at least one layer of organic material. The capping layer has the effect that a reflectance of external light is reduced whereas outcoupling of the light generated in the at least one layer of organic material through the capping layer is increased.

摘要翻译： 本发明涉及一种有机发光器件（OLED），其包括第一电极，第二电极，布置在第一电极和第二电极之间的至少一层有机材料，以及布置在第二电极上的电介质覆盖层 与所述第一电极相对，其中所述封盖层包括与所述第二电极相对的外表面，用于发射在所述至少一层有机材料中产生的光。 封盖层具有外部光的反射率降低的效果，而通过覆盖层在至少一层有机材料中产生的光的外耦合增加。

公开(公告)号：US08288803B2

公开(公告)日：2012-10-16

申请号：US12550857

申请日：2009-08-31

申请人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Paul M. Solomon

发明人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Paul M. Solomon

IPC分类号： H01L29/76

CPC分类号： H01L29/7391 ,  B82Y10/00 ,  H01L29/0665

摘要： An indirectly induced tunnel emitter for a tunneling field effect transistor (TFET) structure includes an outer sheath that at least partially surrounds an elongated core element, the elongated core element formed from a first semiconductor material; an insulator layer disposed between the outer sheath and the core element; the outer sheath disposed at a location corresponding to a source region of the TFET structure; and a source contact that shorts the outer sheath to the core element; wherein the outer sheath is configured to introduce a carrier concentration in the source region of the core element sufficient for tunneling into a channel region of the TFET structure during an on state.

摘要翻译： 用于隧道场效应晶体管（TFET）结构的间接感应隧道发射器包括至少部分地围绕细长芯元件的外护套，所述细长芯元件由第一半导体材料形成; 设置在所述外护套和所述芯元件之间的绝缘体层; 所述外护套设置在对应于所述TFET结构的源极区域的位置处; 以及将外护套短路到芯元件的源极接触件; 其中所述外护套被配置为在所述芯部元件的源极区域中引入足够的载流子浓度以在导通状态期间隧穿到所述TFET结构的沟道区域。

公开(公告)号：US08129763B2

公开(公告)日：2012-03-06

申请号：US12027712

申请日：2008-02-07

申请人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

发明人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

IPC分类号： H01L29/06

CPC分类号： H01L29/0847 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/66666 ,  H01L29/7827

摘要： A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes a superlattice structure wherein a mini-band is formed. The energy filter is operative to control an injection of carriers from the first source/drain into the channel. The energy filter, in combination with the first source/drain, is configured to produce an effective zero-Kelvin first source/drain.

摘要翻译： MOS器件包括相对于彼此间隔开的第一和第二源极/漏极。 在第一和第二源极/漏极之间的器件中形成通道。 在第一和第二源极/漏极之间并且靠近沟道的器件中形成栅极，栅极与第一和第二源极/漏极和沟道电隔离。 栅极被配置为根据施加到栅极的电位来控制沟道的导通。 MOS器件还包括形成在第一源极/漏极和沟道之间的能量滤波器。 能量滤波器包括形成微带的超晶格结构。 能量滤波器用于控制从第一源极/漏极进入沟道的载流子的注入。 与第一源极/漏极组合的能量滤波器被配置为产生有效的零开尔文第一源极/漏极。

公开(公告)号：US07759729B2

公开(公告)日：2010-07-20

申请号：US12027608

申请日：2008-02-07

申请人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

发明人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

IPC分类号： H01L29/78

CPC分类号： H01L29/0847 ,  B82Y10/00 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/0895 ,  H01L29/66977 ,  H01L29/772 ,  H01L29/775 ,  H01L29/7827 ,  H01L29/786

摘要： A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel.

摘要翻译： MOS器件包括相对于彼此间隔开的第一和第二源极/漏极。 在第一和第二源极/漏极之间的器件中形成通道。 在第一和第二源极/漏极之间并且靠近沟道的器件中形成栅极，栅极与第一和第二源极/漏极和沟道电隔离。 栅极被配置为根据施加到栅极的电位来控制沟道的导通。 MOS器件还包括形成在第一源极/漏极和沟道之间的能量滤波器。 能量滤波器包括可操作用于控制载流子从第一源极/漏极注入沟道的杂质带。

公开(公告)号：US20090273011A1

公开(公告)日：2009-11-05

申请号：US12504404

申请日：2009-07-16

申请人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

发明人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

IPC分类号： H01L29/78

CPC分类号： H01L29/0847 ,  B82Y10/00 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/0895 ,  H01L29/66977 ,  H01L29/772 ,  H01L29/775 ,  H01L29/7827 ,  H01L29/786

摘要： A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel.

公开(公告)号：US07306970B2

公开(公告)日：2007-12-11

申请号：US11214334

申请日：2005-08-29

申请人： Siegfried F. Karg ,  Bruno Michel ,  Heike E. Riel ,  Walter H. Riess

发明人： Siegfried F. Karg ,  Bruno Michel ,  Heike E. Riel ,  Walter H. Riess

IPC分类号： H01L51/40

CPC分类号： H01L51/0004 ,  Y10T428/14 ,  Y10T428/1419 ,  Y10T428/1429 ,  Y10T428/1438

摘要： A method for manufacturing an organic electronic device including a stack of layers with a lateral structure on a substrate, at least one of the layers being an organic material layer. A method includes with the step of providing a stamp with at least one protrusion of the surface area corresponding to the lateral structure. The stack of layers is deposited with a first face on the surface area of the protrusion of the stamp. A second face of the stack that is opposite to the first face is brought into adhesive contact with the substrate. The stamp is released from the stack.

摘要翻译： 一种用于制造有机电子器件的方法，所述有机电子器件包括在衬底上具有横向结构的层叠层，所述层中的至少一层是有机材料层。 一种方法包括以下步骤：提供具有对应于横向结构的表面区域的至少一个突起的印模。 层叠堆叠在印模的突起的表面区域上的第一面。 与第一面相对的堆叠的第二面与基底粘合接触。 邮票从堆栈中释放。

公开(公告)号：US08049207B2

公开(公告)日：2011-11-01

申请号：US11866478

申请日：2007-10-03

申请人： Siegfried F. Karg ,  Bruno Michel ,  Heike E. Riel ,  Walter H. Riess

发明人： Siegfried F. Karg ,  Bruno Michel ,  Heike E. Riel ,  Walter H. Riess

IPC分类号： H01L51/00

CPC分类号： H01L51/0004 ,  Y10T428/14 ,  Y10T428/1419 ,  Y10T428/1429 ,  Y10T428/1438

摘要： A method for manufacturing an organic electronic device including a stack of layers including a release layer, the stack having a lateral structure on a substrate, at least one of the layers being an organic material layer. A method includes with the step of providing a stamp with at least one protrusion of the surface area corresponding to the lateral structure. The stack of layers is deposited with a first face on the surface area of the protrusion of the stamp. A second face of the stack that is opposite to the first face is brought into adhesive contact with the substrate. The stamp is released from the stack.

摘要翻译： 一种制造有机电子器件的方法，该有机电子器件包括一层包括剥离层的层，所述堆叠在衬底上具有侧向结构，所述层中的至少一层是有机材料层。 一种方法包括以下步骤：提供具有对应于横向结构的表面区域的至少一个突起的印模。 层叠堆叠在印模的突起的表面区域上的第一面。 与第一面相对的堆叠的第二面与基底粘合接触。 邮票从堆栈中释放。

公开(公告)号：US08022447B2

公开(公告)日：2011-09-20

申请号：US12504404

申请日：2009-07-16

申请人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

发明人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

IPC分类号： H01L29/38

CPC分类号： H01L29/0847 ,  B82Y10/00 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/0895 ,  H01L29/66977 ,  H01L29/772 ,  H01L29/775 ,  H01L29/7827 ,  H01L29/786

摘要： A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel.

摘要翻译： MOS器件包括相对于彼此间隔开的第一和第二源极/漏极。 在第一和第二源极/漏极之间的器件中形成通道。 在第一和第二源极/漏极之间并且靠近沟道的器件中形成栅极，栅极与第一和第二源极/漏极和沟道电隔离。 栅极被配置为根据施加到栅极的电位来控制沟道的导通。 MOS器件还包括形成在第一源极/漏极和沟道之间的能量滤波器。 能量滤波器包括可操作地控制载流子从第一源极/漏极注入沟道的杂质带。

公开(公告)号：US20090200605A1

公开(公告)日：2009-08-13

申请号：US12027608

申请日：2008-02-07

申请人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

发明人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

IPC分类号： H01L21/336 ,  H01L29/78

CPC分类号： H01L29/0847 ,  B82Y10/00 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/0895 ,  H01L29/66977 ,  H01L29/772 ,  H01L29/775 ,  H01L29/7827 ,  H01L29/786

摘要： A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel.

摘要翻译： MOS器件包括相对于彼此间隔开的第一和第二源极/漏极。 在第一和第二源极/漏极之间的器件中形成通道。 在第一和第二源极/漏极之间并且靠近沟道的器件中形成栅极，栅极与第一和第二源极/漏极和沟道电隔离。 栅极被配置为根据施加到栅极的电位来控制沟道的导通。 MOS器件还包括形成在第一源极/漏极和沟道之间的能量滤波器。 能量滤波器包括可操作用于控制载流子从第一源极/漏极注入沟道的杂质带。