公开(公告)号：US08288803B2

公开(公告)日：2012-10-16

申请号：US12550857

申请日：2009-08-31

申请人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Paul M. Solomon

发明人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Paul M. Solomon

IPC分类号： H01L29/76

CPC分类号： H01L29/7391 ,  B82Y10/00 ,  H01L29/0665

摘要： An indirectly induced tunnel emitter for a tunneling field effect transistor (TFET) structure includes an outer sheath that at least partially surrounds an elongated core element, the elongated core element formed from a first semiconductor material; an insulator layer disposed between the outer sheath and the core element; the outer sheath disposed at a location corresponding to a source region of the TFET structure; and a source contact that shorts the outer sheath to the core element; wherein the outer sheath is configured to introduce a carrier concentration in the source region of the core element sufficient for tunneling into a channel region of the TFET structure during an on state.

摘要翻译： 用于隧道场效应晶体管（TFET）结构的间接感应隧道发射器包括至少部分地围绕细长芯元件的外护套，所述细长芯元件由第一半导体材料形成; 设置在所述外护套和所述芯元件之间的绝缘体层; 所述外护套设置在对应于所述TFET结构的源极区域的位置处; 以及将外护套短路到芯元件的源极接触件; 其中所述外护套被配置为在所述芯部元件的源极区域中引入足够的载流子浓度以在导通状态期间隧穿到所述TFET结构的沟道区域。

公开(公告)号：US08129763B2

公开(公告)日：2012-03-06

申请号：US12027712

申请日：2008-02-07

申请人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

发明人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

IPC分类号： H01L29/06

CPC分类号： H01L29/0847 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/66666 ,  H01L29/7827

摘要： A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes a superlattice structure wherein a mini-band is formed. The energy filter is operative to control an injection of carriers from the first source/drain into the channel. The energy filter, in combination with the first source/drain, is configured to produce an effective zero-Kelvin first source/drain.

摘要翻译： MOS器件包括相对于彼此间隔开的第一和第二源极/漏极。 在第一和第二源极/漏极之间的器件中形成通道。 在第一和第二源极/漏极之间并且靠近沟道的器件中形成栅极，栅极与第一和第二源极/漏极和沟道电隔离。 栅极被配置为根据施加到栅极的电位来控制沟道的导通。 MOS器件还包括形成在第一源极/漏极和沟道之间的能量滤波器。 能量滤波器包括形成微带的超晶格结构。 能量滤波器用于控制从第一源极/漏极进入沟道的载流子的注入。 与第一源极/漏极组合的能量滤波器被配置为产生有效的零开尔文第一源极/漏极。

公开(公告)号：US08212269B2

公开(公告)日：2012-07-03

申请号：US11719426

申请日：2005-10-21

申请人： Siegfried F. Karg ,  Hajime Nakamura ,  Heike E. Riel ,  Walter H. Riess ,  Constance Rost-Bietsch

发明人： Siegfried F. Karg ,  Hajime Nakamura ,  Heike E. Riel ,  Walter H. Riess ,  Constance Rost-Bietsch

IPC分类号： H01L33/00

CPC分类号： H01L51/5281 ,  H01L51/5231 ,  H01L51/5253 ,  H01L51/5262 ,  H01L51/5275

摘要： The present invention is directed to an organic light emitting device (OLED) including a first electrode, a second electrode, at least one layer of organic material arranged between the first electrode and the second electrode, and a dielectric capping layer arranged on the second electrode opposite to the first electrode, wherein the capping layer comprises an outer surface, opposite to the second electrode, for emission of light generated in the at least one layer of organic material. The capping layer has the effect that a reflectance of external light is reduced whereas outcoupling of the light generated in the at least one layer of organic material through the capping layer is increased.

摘要翻译： 本发明涉及一种有机发光器件（OLED），其包括第一电极，第二电极，布置在第一电极和第二电极之间的至少一层有机材料，以及布置在第二电极上的电介质覆盖层 与所述第一电极相对，其中所述封盖层包括与所述第二电极相对的外表面，用于发射在所述至少一层有机材料中产生的光。 封盖层具有外部光的反射率降低的效果，而通过覆盖层在至少一层有机材料中产生的光的外耦合增加。

公开(公告)号：US08049207B2

公开(公告)日：2011-11-01

申请号：US11866478

申请日：2007-10-03

申请人： Siegfried F. Karg ,  Bruno Michel ,  Heike E. Riel ,  Walter H. Riess

发明人： Siegfried F. Karg ,  Bruno Michel ,  Heike E. Riel ,  Walter H. Riess

IPC分类号： H01L51/00

CPC分类号： H01L51/0004 ,  Y10T428/14 ,  Y10T428/1419 ,  Y10T428/1429 ,  Y10T428/1438

摘要： A method for manufacturing an organic electronic device including a stack of layers including a release layer, the stack having a lateral structure on a substrate, at least one of the layers being an organic material layer. A method includes with the step of providing a stamp with at least one protrusion of the surface area corresponding to the lateral structure. The stack of layers is deposited with a first face on the surface area of the protrusion of the stamp. A second face of the stack that is opposite to the first face is brought into adhesive contact with the substrate. The stamp is released from the stack.

摘要翻译： 一种制造有机电子器件的方法，该有机电子器件包括一层包括剥离层的层，所述堆叠在衬底上具有侧向结构，所述层中的至少一层是有机材料层。 一种方法包括以下步骤：提供具有对应于横向结构的表面区域的至少一个突起的印模。 层叠堆叠在印模的突起的表面区域上的第一面。 与第一面相对的堆叠的第二面与基底粘合接触。 邮票从堆栈中释放。

公开(公告)号：US08022447B2

公开(公告)日：2011-09-20

申请号：US12504404

申请日：2009-07-16

申请人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

发明人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

IPC分类号： H01L29/38

CPC分类号： H01L29/0847 ,  B82Y10/00 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/0895 ,  H01L29/66977 ,  H01L29/772 ,  H01L29/775 ,  H01L29/7827 ,  H01L29/786

摘要： A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel.

摘要翻译： MOS器件包括相对于彼此间隔开的第一和第二源极/漏极。 在第一和第二源极/漏极之间的器件中形成通道。 在第一和第二源极/漏极之间并且靠近沟道的器件中形成栅极，栅极与第一和第二源极/漏极和沟道电隔离。 栅极被配置为根据施加到栅极的电位来控制沟道的导通。 MOS器件还包括形成在第一源极/漏极和沟道之间的能量滤波器。 能量滤波器包括可操作地控制载流子从第一源极/漏极注入沟道的杂质带。

公开(公告)号：US07686886B2

公开(公告)日：2010-03-30

申请号：US11535122

申请日：2006-09-26

申请人： Walter H Riess ,  Heike E Riel ,  Siegfried F Karg ,  Heinz Schmid

发明人： Walter H Riess ,  Heike E Riel ,  Siegfried F Karg ,  Heinz Schmid

IPC分类号： C30B25/00

CPC分类号： C30B29/60 ,  Y10S117/902

摘要： A method for forming a structure of a desired cross-section on a substrate is provided. The method provides a seed structure comprising at least one support layer on the substrate. The support layer has a geometric shape related to the desired cross-section of the structure and is diffusive to a precursor constituent. The method further includes growing the structure by supplying at least one precursor constituent on the substrate. The desired cross-section of the structure is defined by the geometric shape of at least one support layer.

摘要翻译： 提供了一种在基板上形成所需横截面结构的方法。 该方法提供了在基底上包括至少一个支撑层的种子结构。 支撑层具有与结构的期望横截面相关的几何形状并且扩散到前体成分。 该方法还包括通过在衬底上提供至少一种前体成分来生长该结构。 结构的期望横截面由至少一个支撑层的几何形状限定。

公开(公告)号：US20090200605A1

公开(公告)日：2009-08-13

申请号：US12027608

申请日：2008-02-07

申请人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

发明人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

IPC分类号： H01L21/336 ,  H01L29/78

CPC分类号： H01L29/0847 ,  B82Y10/00 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/0895 ,  H01L29/66977 ,  H01L29/772 ,  H01L29/775 ,  H01L29/7827 ,  H01L29/786

摘要： A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel.

摘要翻译： MOS器件包括相对于彼此间隔开的第一和第二源极/漏极。 在第一和第二源极/漏极之间的器件中形成通道。 在第一和第二源极/漏极之间并且靠近沟道的器件中形成栅极，栅极与第一和第二源极/漏极和沟道电隔离。 栅极被配置为根据施加到栅极的电位来控制沟道的导通。 MOS器件还包括形成在第一源极/漏极和沟道之间的能量滤波器。 能量滤波器包括可操作用于控制载流子从第一源极/漏极注入沟道的杂质带。

公开(公告)号：US20090200540A1

公开(公告)日：2009-08-13

申请号：US12027712

申请日：2008-02-07

申请人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

发明人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

IPC分类号： H01L29/06 ,  H01L21/336

CPC分类号： H01L29/0847 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/66666 ,  H01L29/7827

摘要： A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes a superlattice structure wherein a mini-band is formed. The energy filter is operative to control an injection of carriers from the first source/drain into the channel. The energy filter, in combination with the first source/drain, is configured to produce an effective zero-Kelvin first source/drain.

摘要翻译： MOS器件包括相对于彼此间隔开的第一和第二源极/漏极。 在第一和第二源极/漏极之间的器件中形成通道。 在第一和第二源极/漏极之间并且靠近沟道的器件中形成栅极，栅极与第一和第二源极/漏极和沟道电隔离。 栅极被配置为根据施加到栅极的电位来控制沟道的导通。 MOS器件还包括形成在第一源极/漏极和沟道之间的能量滤波器。 能量滤波器包括形成微带的超晶格结构。 能量滤波器用于控制从第一源极/漏极进入沟道的载流子的注入。 与第一源极/漏极组合的能量滤波器被配置为产生有效的零开尔文第一源极/漏极。

公开(公告)号：US20080251777A1

公开(公告)日：2008-10-16

申请号：US12120605

申请日：2008-05-14

申请人： Georg J. Bednorz ,  David J. Gundlach ,  Siegfried F. Karg ,  Gerhard I. Meijer ,  Heike E. Riel ,  Walter H. Riess

发明人： Georg J. Bednorz ,  David J. Gundlach ,  Siegfried F. Karg ,  Gerhard I. Meijer ,  Heike E. Riel ,  Walter H. Riess

IPC分类号： H01L29/772

CPC分类号： H01L49/003 ,  G11C11/22 ,  G11C13/0007 ,  G11C2213/31 ,  H01L29/685

摘要： A field effect device includes a source electrode, a drain electrode, a channel formed between the source electrode and the drain electrode, and a gate electrode formed directly on the channel and arranged in a gap between the source electrode and the drain electrode. The channel includes a switching material that is reversibly switchable between a lower conductivity state and a higher conductivity state. The first conductivity state has an electrical conductivity which is lower than an electrical conductivity of the second conductivity state. Each of the conductivity states is persistent without the need for a sustaining excitation signal including an electrical field, heat and/or light applied to the device.

摘要翻译： 场效应器件包括源电极，漏电极，形成在源电极和漏电极之间的沟道，以及直接形成在沟道上并布置在源电极和漏电极之间的间隙中的栅电极。 该通道包括可在较低电导率状态和较高导电率状态之间可逆切换的开关材料。 第一导电状态具有低于第二导电状态的电导率的电导率。 导电状态中的每一个都是持续的，而不需要包括施加到器件的电场，热和/或光的维持激励信号。

公开(公告)号：US20080220561A1

公开(公告)日：2008-09-11

申请号：US11871135

申请日：2007-10-11

申请人： Siegfried F. Karg ,  Heike E. Riel ,  Walter H. Riess

发明人： Siegfried F. Karg ,  Heike E. Riel ,  Walter H. Riess

IPC分类号： H01L51/40 ,  B05D5/12 ,  B05C5/00

CPC分类号： H01L51/0004 ,  H01L51/0541 ,  H01L51/56

摘要： The present invention provides methods and apparatus for melt-based patterning for electronic devices. It employs and provides processes and apparatus for fabricating an electronic device having a pattern formed on a surface by a deposition material. Further, the invention a process for fabricating semiconductors, organic light-emitting devices (OLEDs), field-effect transistors, and in particular high-resolution patterning for RGB displays. A process for fabricating an organic electronic device includes the steps of heating and applying a pressure to the deposition material to form a melt, and depositing the melted deposition material on the surface with a phase-change printing technique or a spray technique. The melted deposition material solidifies on the surface.

摘要翻译： 本发明提供了用于电子设备的熔融图案化方法和设备。 它采用和提供用于制造具有通过沉积材料在表面上形成的图案的电子器件的工艺和装置。 此外，本发明还涉及用于制造半导体，有机发光器件（OLED），场效应晶体管，特别是用于RGB显示器的高分辨率图案化的工艺。 制造有机电子器件的方法包括以下步骤：加热和施加压力至沉积材料以形成熔体;以及使用相变印刷技术或喷涂技术将熔融的沉积材料沉积在表面上。 熔融的沉积材料在表面上固化。