公开(公告)号：US08129763B2

公开(公告)日：2012-03-06

申请号：US12027712

申请日：2008-02-07

申请人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

发明人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

IPC分类号： H01L29/06

CPC分类号： H01L29/0847 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/66666 ,  H01L29/7827

摘要： A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes a superlattice structure wherein a mini-band is formed. The energy filter is operative to control an injection of carriers from the first source/drain into the channel. The energy filter, in combination with the first source/drain, is configured to produce an effective zero-Kelvin first source/drain.

摘要翻译： MOS器件包括相对于彼此间隔开的第一和第二源极/漏极。 在第一和第二源极/漏极之间的器件中形成通道。 在第一和第二源极/漏极之间并且靠近沟道的器件中形成栅极，栅极与第一和第二源极/漏极和沟道电隔离。 栅极被配置为根据施加到栅极的电位来控制沟道的导通。 MOS器件还包括形成在第一源极/漏极和沟道之间的能量滤波器。 能量滤波器包括形成微带的超晶格结构。 能量滤波器用于控制从第一源极/漏极进入沟道的载流子的注入。 与第一源极/漏极组合的能量滤波器被配置为产生有效的零开尔文第一源极/漏极。

公开(公告)号：US07759729B2

公开(公告)日：2010-07-20

申请号：US12027608

申请日：2008-02-07

申请人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

发明人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

IPC分类号： H01L29/78

CPC分类号： H01L29/0847 ,  B82Y10/00 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/0895 ,  H01L29/66977 ,  H01L29/772 ,  H01L29/775 ,  H01L29/7827 ,  H01L29/786

摘要： A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel.

摘要翻译： MOS器件包括相对于彼此间隔开的第一和第二源极/漏极。 在第一和第二源极/漏极之间的器件中形成通道。 在第一和第二源极/漏极之间并且靠近沟道的器件中形成栅极，栅极与第一和第二源极/漏极和沟道电隔离。 栅极被配置为根据施加到栅极的电位来控制沟道的导通。 MOS器件还包括形成在第一源极/漏极和沟道之间的能量滤波器。 能量滤波器包括可操作用于控制载流子从第一源极/漏极注入沟道的杂质带。

公开(公告)号：US20090273011A1

公开(公告)日：2009-11-05

申请号：US12504404

申请日：2009-07-16

申请人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

发明人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

IPC分类号： H01L29/78

CPC分类号： H01L29/0847 ,  B82Y10/00 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/0895 ,  H01L29/66977 ,  H01L29/772 ,  H01L29/775 ,  H01L29/7827 ,  H01L29/786

摘要： A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel.

公开(公告)号：US08022447B2

公开(公告)日：2011-09-20

申请号：US12504404

申请日：2009-07-16

申请人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

发明人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

IPC分类号： H01L29/38

CPC分类号： H01L29/0847 ,  B82Y10/00 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/0895 ,  H01L29/66977 ,  H01L29/772 ,  H01L29/775 ,  H01L29/7827 ,  H01L29/786

摘要： A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel.

摘要翻译： MOS器件包括相对于彼此间隔开的第一和第二源极/漏极。 在第一和第二源极/漏极之间的器件中形成通道。 在第一和第二源极/漏极之间并且靠近沟道的器件中形成栅极，栅极与第一和第二源极/漏极和沟道电隔离。 栅极被配置为根据施加到栅极的电位来控制沟道的导通。 MOS器件还包括形成在第一源极/漏极和沟道之间的能量滤波器。 能量滤波器包括可操作地控制载流子从第一源极/漏极注入沟道的杂质带。

公开(公告)号：US20090200605A1

公开(公告)日：2009-08-13

申请号：US12027608

申请日：2008-02-07

申请人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

发明人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

IPC分类号： H01L21/336 ,  H01L29/78

CPC分类号： H01L29/0847 ,  B82Y10/00 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/0895 ,  H01L29/66977 ,  H01L29/772 ,  H01L29/775 ,  H01L29/7827 ,  H01L29/786

摘要： A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel.

摘要翻译： MOS器件包括相对于彼此间隔开的第一和第二源极/漏极。 在第一和第二源极/漏极之间的器件中形成通道。 在第一和第二源极/漏极之间并且靠近沟道的器件中形成栅极，栅极与第一和第二源极/漏极和沟道电隔离。 栅极被配置为根据施加到栅极的电位来控制沟道的导通。 MOS器件还包括形成在第一源极/漏极和沟道之间的能量滤波器。 能量滤波器包括可操作用于控制载流子从第一源极/漏极注入沟道的杂质带。

公开(公告)号：US20090200540A1

公开(公告)日：2009-08-13

申请号：US12027712

申请日：2008-02-07

申请人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

发明人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

IPC分类号： H01L29/06 ,  H01L21/336

CPC分类号： H01L29/0847 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/66666 ,  H01L29/7827

摘要： A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes a superlattice structure wherein a mini-band is formed. The energy filter is operative to control an injection of carriers from the first source/drain into the channel. The energy filter, in combination with the first source/drain, is configured to produce an effective zero-Kelvin first source/drain.

摘要翻译： MOS器件包括相对于彼此间隔开的第一和第二源极/漏极。 在第一和第二源极/漏极之间的器件中形成通道。 在第一和第二源极/漏极之间并且靠近沟道的器件中形成栅极，栅极与第一和第二源极/漏极和沟道电隔离。 栅极被配置为根据施加到栅极的电位来控制沟道的导通。 MOS器件还包括形成在第一源极/漏极和沟道之间的能量滤波器。 能量滤波器包括形成微带的超晶格结构。 能量滤波器用于控制从第一源极/漏极进入沟道的载流子的注入。 与第一源极/漏极组合的能量滤波器被配置为产生有效的零开尔文第一源极/漏极。

公开(公告)号：US08288803B2

公开(公告)日：2012-10-16

申请号：US12550857

申请日：2009-08-31

申请人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Paul M. Solomon

发明人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Paul M. Solomon

IPC分类号： H01L29/76

CPC分类号： H01L29/7391 ,  B82Y10/00 ,  H01L29/0665

摘要： An indirectly induced tunnel emitter for a tunneling field effect transistor (TFET) structure includes an outer sheath that at least partially surrounds an elongated core element, the elongated core element formed from a first semiconductor material; an insulator layer disposed between the outer sheath and the core element; the outer sheath disposed at a location corresponding to a source region of the TFET structure; and a source contact that shorts the outer sheath to the core element; wherein the outer sheath is configured to introduce a carrier concentration in the source region of the core element sufficient for tunneling into a channel region of the TFET structure during an on state.

摘要翻译： 用于隧道场效应晶体管（TFET）结构的间接感应隧道发射器包括至少部分地围绕细长芯元件的外护套，所述细长芯元件由第一半导体材料形成; 设置在所述外护套和所述芯元件之间的绝缘体层; 所述外护套设置在对应于所述TFET结构的源极区域的位置处; 以及将外护套短路到芯元件的源极接触件; 其中所述外护套被配置为在所述芯部元件的源极区域中引入足够的载流子浓度以在导通状态期间隧穿到所述TFET结构的沟道区域。

公开(公告)号：US20110049474A1

公开(公告)日：2011-03-03

申请号：US12550857

申请日：2009-08-31

申请人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Reil ,  Walter H. Riess ,  Paul M. Solomon

发明人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Reil ,  Walter H. Riess ,  Paul M. Solomon

IPC分类号： H01L29/772 ,  H01L21/28

CPC分类号： H01L29/7391 ,  B82Y10/00 ,  H01L29/0665

摘要： An indirectly induced tunnel emitter for a tunneling field effect transistor (TFET) structure includes an outer sheath that at least partially surrounds an elongated core element, the elongated core element formed from a first semiconductor material; an insulator layer disposed between the outer sheath and the core element; the outer sheath disposed at a location corresponding to a source region of the TFET structure; and a source contact that shorts the outer sheath to the core element; wherein the outer sheath is configured to introduce a carrier concentration in the source region of the core element sufficient for tunneling into a channel region of the TFET structure during an on state.

摘要翻译： 用于隧道场效应晶体管（TFET）结构的间接感应隧道发射器包括至少部分地围绕细长芯元件的外护套，所述细长芯元件由第一半导体材料形成; 设置在所述外护套和所述芯元件之间的绝缘体层; 所述外护套设置在对应于所述TFET结构的源极区域的位置处; 以及将外护套短路到芯元件的源极接触件; 其中所述外护套被配置为在所述芯部元件的源极区域中引入足够的载流子浓度以在导通状态期间隧穿到所述TFET结构的沟道区域。

公开(公告)号：US20120280292A1

公开(公告)日：2012-11-08

申请号：US13503868

申请日：2010-10-18

申请人： Mikael T. Bjoerk ,  Joachim Knoch ,  Heike E. Riel ,  Walter Heinrich Riess ,  Heinz Schmid

发明人： Mikael T. Bjoerk ,  Joachim Knoch ,  Heike E. Riel ,  Walter Heinrich Riess ,  Heinz Schmid

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/775 ,  B82Y10/00 ,  H01L23/29 ,  H01L29/0665 ,  H01L29/402 ,  H01L29/42392 ,  H01L29/78606 ,  H01L29/78621 ,  H01L29/78696 ,  H01L2924/0002 ,  Y10S977/773 ,  Y10S977/78 ,  H01L2924/00

摘要： A semiconductor device and a method for fabricating the semiconductor device. The device includes: a doped semiconductor having a source region, a drain region, a channel between the source and drain regions, and an extension region between the channel and each of the source and drain regions; a gate formed on the channel; and a screening coating on each of the extension regions. The screening coating includes: (i) an insulating layer that has a dielectric constant that is no greater than about half that of the extension regions and is formed directly on the extension regions, and (ii) a screening layer on the insulating layer, where the screening layer screens the dopant ionization potential in the extension regions to inhibit dopant deactivation.

摘要翻译： 一种半导体器件及其制造方法。 该器件包括：掺杂半导体，其具有源极区，漏极区，源极和漏极区之间的沟道，以及沟道和源极和漏极区中的每一个之间的延伸区域; 在通道上形成的门; 以及在每个延伸区域上的筛选涂层。 屏蔽涂层包括：（i）绝缘层，其介电常数不大于延伸区域的一半，并且直接形成在延伸区域上，和（ii）绝缘层上的屏蔽层，其中 屏蔽层屏蔽延伸区域中的掺杂剂离子化电位以抑制掺杂剂失活。

公开(公告)号：US08193524B2

公开(公告)日：2012-06-05

申请号：US12564091

申请日：2009-09-22

申请人： Mikael T Bjoerk ,  Joachim Knoch ,  Heike E Riel ,  Walter Heinrich Riess ,  Heinz Schmid

发明人： Mikael T Bjoerk ,  Joachim Knoch ,  Heike E Riel ,  Walter Heinrich Riess ,  Heinz Schmid

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/20

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/125 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/785 ,  H01L29/78642 ,  H01L29/78696 ,  H01L2924/0002 ,  Y10S977/762 ,  H01L2924/00

摘要： An electronic device and method of manufacturing the device. The device includes a semiconducting region, which can be a nanowire, a first contact electrically coupled to the semiconducting region, and at least one second contact capacitively coupled to the semiconducting region. At least a portion of the semiconducting region between the first contact and the second contact is covered with a dipole layer. The dipole layer can act as a local gate on the semiconducting region to enhance the electric properties of the device.

摘要翻译： 电子装置及其制造方法。 器件包括半导体区域，其可以是纳米线，电耦合到半导体区域的第一接触点和电容耦合到半导体区域的至少一个第二接触点。 第一触点和第二触点之间的半导体区域的至少一部分被偶极子层覆盖。 偶极层可以用作半导体区域上的局部栅极，以增强器件的电性能。