公开(公告)号：US09865754B2

公开(公告)日：2018-01-09

申请号：US14051336

申请日：2013-10-10

Applicant: Silevo, Inc.

Inventor： Zhigang Xie ,  Jiunn Benjamin Heng ,  Wei Wang ,  Jianming Fu ,  Zheng Xu

IPC: H01L31/00 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/062

CPC classification number: H01L31/035209 ,  H01L31/062 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: One embodiment of the present invention provides a solar cell. The solar cell includes a base layer comprising crystalline Si (c-Si), a hole collector situated on a first side of the base layer, and an electron collector situated on a second side of the base layer, which is opposite the first side. The hole collector includes a quantum-tunneling-barrier (QTB) layer situated adjacent to the base layer and a transparent conducting oxide (TCO) layer situated adjacent to the QTB layer. The TCO layer has a work function of at least 5.0 eV.

公开(公告)号：US20140102524A1

公开(公告)日：2014-04-17

申请号：US14054688

申请日：2013-10-15

Applicant: Silevo, Inc.

Inventor： Zhigang Xie ,  Jiunn Benjamin Heng ,  Wei Wang ,  Jianming Fu ,  Zheng Xu

IPC: H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/035209 ,  H01L31/065 ,  H01L31/072 ,  H01L31/0747 ,  H01L31/1884 ,  Y02E10/50

Abstract: One embodiment of the present invention provides a solar cell. The solar cell includes a base layer comprising crystalline Si (c-Si), an electron collector situated on a first side of the base layer, and a hole collector situated on a second side of the base layer, which is opposite the first side. The electron collector includes a quantum-tunneling-barrier (QTB) layer situated adjacent to the base layer and a transparent conducting oxide (TCO) layer situated adjacent to the QTB layer. The TCO layer has a work function of less than 4.2 eV.

Abstract translation: 本发明的一个实施例提供一种太阳能电池。 太阳能电池包括基底层，该基底层包含晶体Si（c-Si），位于基底层第一侧的电子收集体和位于第一侧相对的基底层的第二侧的孔收集体。 电子收集器包括邻近基极层的量子隧道势垒（QTB）层和邻近QTB层的透明导电氧化物（TCO）层。 TCO层具有小于4.2eV的功函数。

公开(公告)号：US20140096817A1

公开(公告)日：2014-04-10

申请号：US14051336

申请日：2013-10-10

Applicant: Silevo, Inc.

Inventor： Zhigang Xie ,  Jiunn Benjamin Heng ,  Wei Wang ,  Jianming Fu ,  Zheng Xu

IPC: H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/035209 ,  H01L31/062 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: One embodiment of the present invention provides a solar cell. The solar cell includes a base layer comprising crystalline Si (c-Si), a hole collector situated on a first side of the base layer, and an electron collector situated on a second side of the base layer, which is opposite the first side. The hole collector includes a quantum-tunneling-barrier (QTB) layer situated adjacent to the base layer and a transparent conducting oxide (TCO) layer situated adjacent to the QTB layer. The TCO layer has a work function of at least 5.0 eV.

Abstract translation: 本发明的一个实施例提供一种太阳能电池。 太阳能电池包括基底层，该基底层包含结晶Si（c-Si），位于基底层的第一侧上的空穴收集器和位于基底层的与第一侧相对的第二侧的电子收集体。 空穴收集器包括邻近基极层的量子隧道势垒（QTB）层和位于QTB层附近的透明导电氧化物（TCO）层。 TCO层具有至少5.0eV的功函数。

公开(公告)号：US09281436B2

公开(公告)日：2016-03-08

申请号：US14142605

申请日：2013-12-27

Applicant: Silevo, Inc.

Inventor： Zhigang Xie ,  Wei Wang ,  Zheng Xu ,  Jianming Fu

IPC: C23C14/34 ,  H01J37/34 ,  H01L31/18 ,  H01J37/32

CPC classification number: H01J37/3414 ,  C23C14/3407 ,  C23C14/351 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3438 ,  H01J37/3444 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/347 ,  H01L31/02168 ,  H01L31/1876 ,  H01L31/1884 ,  Y02E10/50

Abstract: One embodiment of the present invention provides a sputtering system for large-scale fabrication of solar cells. The sputtering system includes a reaction chamber, a rotary target situated inside the reaction chamber which is capable of rotating about a longitudinal axis, and an RF power source coupled to at least one end of the rotary target to enable RF sputtering. The length of the rotary target is between 0.5 and 5 meters.

Abstract translation: 本发明的一个实施例提供了一种用于大规模制造太阳能电池的溅射系统。 溅射系统包括反应室，位于反应室内部的能够围绕纵向轴线旋转的旋转靶，以及耦合到旋转靶的至少一端以实现RF溅射的RF电源。 旋转靶的长度在0.5到5米之间。

公开(公告)号：US20140183037A1

公开(公告)日：2014-07-03

申请号：US14142605

申请日：2013-12-27

Applicant: Silevo, Inc.

Inventor： Zhigang Xie ,  Wei Wang ,  Zheng Xu ,  Jianming Fu

IPC: H01L31/18

CPC classification number: H01J37/3414 ,  C23C14/3407 ,  C23C14/351 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3438 ,  H01J37/3444 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/347 ,  H01L31/02168 ,  H01L31/1876 ,  H01L31/1884 ,  Y02E10/50

Abstract: One embodiment of the present invention provides a sputtering system for large-scale fabrication of solar cells. The sputtering system includes a reaction chamber, a rotary target situated inside the reaction chamber which is capable of rotating about a longitudinal axis, and an RF power source coupled to at least one end of the rotary target to enable RF sputtering. The length of the rotary target is between 0.5 and 5 meters.

Abstract translation: 本发明的一个实施例提供了一种用于大规模制造太阳能电池的溅射系统。 溅射系统包括反应室，位于反应室内部的能够围绕纵向轴线旋转的旋转靶，以及耦合到旋转靶的至少一端以实现RF溅射的RF电源。 旋转靶的长度在0.5到5米之间。