公开(公告)号：US10276236B2

公开(公告)日：2019-04-30

申请号：US15597709

申请日：2017-05-17

Applicant: Silicon Storage Technology, Inc. ,  Agency For Science, Technology, and Research

Inventor： Santosh Hariharan ,  Hieu Van Tran ,  Feng Zhou ,  Xian Liu ,  Steven Lemke ,  Nhan Do ,  Zhixian Chen ,  Xinpeng Wang

IPC: G11C13/00 ,  G11C11/00 ,  H01L27/24 ,  H01L45/00

Abstract: A memory device includes a metal oxide material disposed between and in electrical contact with first and second conductive electrodes, and an electrical current source configured to apply one or more electrical current pulses through the metal oxide material. For each of the one or more electrical current pulses, an amplitude of the electrical current increases over time during the electrical current pulse to form a conductive filament in metal oxide material.

公开(公告)号：US20190164617A1

公开(公告)日：2019-05-30

申请号：US15826345

申请日：2017-11-29

Applicant: Silicon Storage Technology, Inc.

Inventor： Hieu Van Tran ,  Vipin Tiwari ,  Nhan Do ,  Steven Lemke ,  Santosh Hariharan ,  Stanley Hong

IPC: G11C16/34 ,  G11C16/10

Abstract: An artificial neural network device that utilizes analog neuromorphic memory that comprises one or more non-volatile memory arrays. The embodiments comprise improved mechanisms and algorithms for tuning the non-volatile memory arrays such that the floating gates of the memory cells can be quickly and accurately injected with the desired amount of charge to signify an analog value utilized as a weight by the artificial neural network.

公开(公告)号：US10748630B2

公开(公告)日：2020-08-18

申请号：US15826345

申请日：2017-11-29

Applicant: Silicon Storage Technology, Inc.

Inventor： Hieu Van Tran ,  Vipin Tiwari ,  Nhan Do ,  Steven Lemke ,  Santosh Hariharan ,  Stanley Hong

IPC: G11C16/10 ,  G11C16/34

Abstract: An artificial neural network device that utilizes analog neuromorphic memory that comprises one or more non-volatile memory arrays. The embodiments comprise improved mechanisms and algorithms for tuning the non-volatile memory arrays such that the floating gates of the memory cells can be quickly and accurately injected with the desired amount of charge to signify an analog value utilized as a weight by the artificial neural network.

公开(公告)号：US20180145253A1

公开(公告)日：2018-05-24

申请号：US15727776

申请日：2017-10-09

Applicant: Silicon Storage Technology, Inc.

Inventor： Feng Zhou ,  Xian Liu ,  Steven Lemke ,  Santosh Hariharan ,  Hieu Van Tran ,  Nhan Do

IPC: H01L45/00

CPC classification number: H01L45/1608 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1675

Abstract: A method of forming a memory device includes forming a first layer of conductive material having opposing upper and lower surfaces, forming a layer of amorphous silicon on the upper surface of the first layer of conductive material, stripping away the layer of amorphous silicon, wherein some of the amorphous silicon remains in the upper surface of the first layer of conductive material, forming a layer of transition metal oxide material on the upper surface of the first layer of conductive material, and forming a second layer of conductive material on the layer of transition metal oxide material. The method smoothes the upper surface of the bottom electrode, and also provides an bottom electrode upper surface with stable material that is hard to oxidize.

公开(公告)号：US20180033482A1

公开(公告)日：2018-02-01

申请号：US15597709

申请日：2017-05-17

Applicant: Silicon Storage Technology, Inc. ,  Agency For Science, Technology, and Research

Inventor： Santosh Hariharan ,  Hieu Van Tran ,  Feng Zhou ,  Xian Liu ,  Steven Lemke ,  Nhan Do ,  Zhixian Chen ,  Xinpeng Wang

IPC: G11C13/00 ,  H01L27/24 ,  H01L45/00

CPC classification number: G11C13/0011 ,  G11C11/00 ,  G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0066 ,  G11C2013/0078 ,  G11C2013/0083 ,  G11C2013/0088 ,  G11C2013/0092 ,  G11C2213/79 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/085 ,  H01L45/146

Abstract: A memory device includes a metal oxide material disposed between and in electrical contact with first and second conductive electrodes, and an electrical current source configured to apply one or more electrical current pulses through the metal oxide material. For each of the one or more electrical current pulses, an amplitude of the electrical current increases over time during the electrical current pulse to form a conductive filament in metal oxide material.