公开(公告)号：US20130326873A1

公开(公告)日：2013-12-12

申请号：US13964488

申请日：2013-08-12

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Huei-Nuan Huang ,  Pin-Cheng Huang ,  Chun-Hung Lu ,  Chun-Chieh Chao ,  Chi-Hsin Chiu

IPC: H01L25/065

CPC classification number: H01L25/0657 ,  B82Y30/00 ,  H01L21/486 ,  H01L23/142 ,  H01L23/367 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2924/00014 ,  Y10T29/49139 ,  Y10T29/49165 ,  H01L2924/014 ,  H01L2224/05552

Abstract: An inner-layer heat-dissipating board and a multi-chip stack package structure having the inner-layer heat-dissipating board are disclosed. The inner-layer heat-dissipating board includes a metal board body formed with a plurality of penetrating conductive through holes each comprising a plurality of nano wires and an oxidative block having nano apertures filled with the nano wires. The multi-chip stack package structure includes a first chip and an electronic component respectively disposed on the inner-layer heat-dissipating board to thereby facilitate heat dissipation in the multi-chip stack structure as well as increase the overall package rigidity.

Abstract translation: 公开了一种内层散热板和具有内层散热板的多芯片堆叠封装结构。 内层散热板包括形成有多个穿透导电通孔的金属板体，每个穿透导电通孔包括多个纳米线，以及具有填充有纳米线的纳米孔的氧化块。 多芯片堆叠封装结构包括分别设置在内层散热板上的第一芯片和电子部件，从而促进多芯片堆叠结构中的散热以及增加整体封装刚性。