公开(公告)号：US08481153B1

公开(公告)日：2013-07-09

申请号：US13032789

申请日：2011-02-23

申请人： Simin Feng ,  Mark B. Moran ,  M. Joseph Roberts ,  Linda F. Johnson

发明人： Simin Feng ,  Mark B. Moran ,  M. Joseph Roberts ,  Linda F. Johnson

IPC分类号： B32B15/04 ,  B32B33/00 ,  G02B1/00

CPC分类号： G02B1/111 ,  G02B1/002 ,  G02B1/113 ,  G02B1/118 ,  G02B5/008 ,  Y10T428/249987 ,  Y10T428/31678

摘要： An apparatus and method for imparting wide angle low reflection on any high reflective surfaces through resonant excitation of plasmonic leaky mode of a nanocavity.

摘要翻译： 一种用于通过纳米腔等离子体泄漏模式的共振激发在任何高反射表面上施加广角低反射的装置和方法。

公开(公告)号：US5654044A

公开(公告)日：1997-08-05

申请号：US520453

申请日：1995-08-29

申请人： Mark B. Moran ,  Karl A. Klemm ,  Linda F. Johnson

发明人： Mark B. Moran ,  Karl A. Klemm ,  Linda F. Johnson

IPC分类号： C23C16/02 ,  C23C16/27 ,  C23C16/26

CPC分类号： C23C16/274 ,  C23C16/0281

摘要： A continuous, adhering film of polycrystalline diamond is grown on a grape substrate from diamond crystallites nucleated at a metal layer on the substrate when subjected to a microwave activated plasma of hydrogen and a carbon containing gas. Pyrolytic graphite and cured graphite adhesive are effective and other forms of graphite may be effective. Effective metals are chromium, nickel, and titanium. Diamond nucleation apparently occurs at crystallites of metal carbides nucleated by carbon from the plasma so that other carbide forming metals may be effective. Metal not nucleated as the carbide is, apparently, etched away by the plasma; and the diamond film is effectively deposited directly on the graphite since the diamond film is not contaminated by the metal even at the graphite interface where carbide contamination was less than 0.2 percent from a 2500 .ANG. chromium film. The diamond film deposition occurs at substrate temperatures as low as 650.degree. C. and may be facilitated by a positive voltage bias of the substrate relative to an enclosing vacuum chamber wall. Partial coating of a graphite surface with the metal results in diamond deposition only at the coated portion. A grid of diamond film has thus been deposited on graphite by application of a nickel screen to the graphite, and diamond film may be deposited in a desired pattern by masking the substrate to deposit the metal at selected substrate portions.

摘要翻译： 当经受微波活化的氢和含碳气体的等离子体时，在基底上的金属层上成核的金刚石微晶，在石墨基底上生长连续粘附的多晶金刚石膜。 热解石墨和固化石墨粘合剂是有效的，其他形式的石墨可能是有效的。 有效金属是铬，镍和钛。 金刚石成核显然发生在由等离子体的碳成核的金属碳化物的微晶中，使得其它形成碳化物的金属可能是有效的。 明显地，由于等离子体腐蚀掉的金属没有成核， 并且金刚石膜有效地直接沉积在石墨上，因为金刚石膜即使在石墨界面处也不被污染，因为石墨界面的碳化物污染小于0.200％，由2500 ANGSTROM铬膜。 金刚石膜沉积在低至650℃的衬底温度下发生，并且可以通过衬底相对于封闭的真空室壁的正电压偏置来促进。 用金属部分涂覆石墨表面仅在涂覆部分处产生金刚石沉积。 因此，金刚石膜的栅格通过将镍屏幕施加到石墨上而沉积在石墨上，并且金刚石膜可以通过掩蔽基底以期望的图案沉积，以在选定的基底部分沉积金属。

公开(公告)号：US5686152A

公开(公告)日：1997-11-11

申请号：US530388

申请日：1995-08-03

申请人： Linda F. Johnson ,  Karl A. Klemm ,  Mark B. Moran

发明人： Linda F. Johnson ,  Karl A. Klemm ,  Mark B. Moran

IPC分类号： C23C16/02 ,  C23C16/27 ,  C23C16/26

CPC分类号： C23C16/274 ,  C23C16/0281

摘要： Nucleation of diamond crystallites is initiated on electrically nonconducting substrates and on semiconducting substrates at a temperatures of 650.degree. C. or lower by providing atoms of a metal in a plasma formed by activation, as by microwave energy in a vacuum chamber, of a mixture of hydrogen and a carbon containing vapor. A continuous, adhering film of polycrystalline diamond is then grown on the substrate from the nucleated crystallites. The nucleation is effective when the substrate has a positive electric potential relative to a wall of the chamber. Positive and negative dopants may be provided in the vapor to give a semiconducting film. The nucleation and film growth are effective at the relatively low substrate temperatures so that dopant diffusion and substrate damage occurring at the usual, higher diamond film deposition temperatures are avoided. Atoms of chromium, titanium, and nickel are particularly effective and may be provided by a metalorganic compound in the vapor or by a solid material which is etched by the plasma and may be the pure metal or its oxide, nitride, or alloy. The solid material may be provided as an open vessel or on a ring within which the substrate is placed or as a coating deposited on the substrate. A partial coating of the solid material results in the diamond film being selectively deposited only on the uncoated portion.

摘要翻译： 通过在真空室中通过微波能量在真空室中提供形成的等离子体中形成的等离子体中的金属原子，在650℃或更低的温度下，在电非导电衬底和半导电衬底上引发金刚石微晶的成核， 氢和含碳蒸汽。 然后将多晶金刚石的连续粘合膜从有核晶体生长在基底上。 当基底相对于腔室的壁具有正电位时，成核是有效的。 可以在蒸气中提供正和负掺杂剂以产生半导体膜。 成核和膜生长在相对较低的衬底温度下是有效的，从而避免了在通常更高的金刚石膜沉积温度下发生的掺杂剂扩散和衬底损伤。 铬，钛和镍的原子是特别有效的，并且可以由蒸气中的金属有机化合物或由等离子体蚀刻的固体材料提供，并且可以是纯金属或其氧化物，氮化物或合金。 固体材料可以设置为开放容器，也可以设置在其中放置基材的环上，或作为沉积在基材上的涂层。 固体材料的部分涂层导致金刚石膜仅选择性沉积在未涂覆的部分上。

公开(公告)号：US5516388A

公开(公告)日：1996-05-14

申请号：US300243

申请日：1994-09-11

申请人： Mark B. Moran ,  Linda F. Johnson

发明人： Mark B. Moran ,  Linda F. Johnson

IPC分类号： B32B37/10 ,  B32B38/00 ,  C04B37/00 ,  C04B37/02 ,  C04B37/04 ,  B32B31/12 ,  B32B31/26

CPC分类号： B32B37/10 ,  C04B37/021 ,  B32B2305/80 ,  B32B2309/02 ,  B32B2309/022 ,  B32B2309/12 ,  B32B2457/00 ,  B32B2551/00 ,  C04B2235/6562 ,  C04B2237/341 ,  C04B2237/348 ,  C04B2237/565

摘要： Preexisting elements are bonded by placing a sol-gel solution between juxtapositioned surfaces of the elements and sintering a gel formed from the solution at a temperature, which does not damage the elements, to form a sol-gel derived bonding material. The elements may be constructed of glasses, metals, infrared transmissive materials, or diamond, and bonded by sintering at about 300.degree. C. The bonding material may be resistant to high temperature and may have properties, such as refractive index, selected by varying the composition of the sol-gel solution. Optical and electronic articles are constructed by preparing a mandrel conforming to a substrate, which may be of arbitrary shape; depositing a coating on the mandrel; bonding the coating to the substrate with a sintered sol-gel; and removing the mandrel, as by etching. Diamond films formed by chemical vapor deposition at temperatures destructive to optical and microelectronic materials are thus mounted on variously shaped elements of these materials for protection against erosion and high temperatures and to provide low friction and high thermal conduction. Tetraethyl orthosilicate used as a sol-gel precursor gives a silica bonding layer effective at up to 800.degree. C. Other precursors may be used, and a titania sol-gel precursor provides a matching index of refraction for zinc sulfide or zinc selenide substrates. An intermediate layer, as of sputter deposited metal selected to accommodate thermal expansion differences, may be disposed between an element to be bonded and the bonding material.

摘要翻译： 通过将溶胶 - 凝胶溶液放置在元件的并置表面之间并将溶液形成的凝胶在不损伤元件的温度下烧结形成溶胶 - 凝胶衍生的粘结材料来粘合预先存在的元件。 这些元件可以由玻璃，金属，红外线透射材料或金刚石构成，并且在约300℃下通过烧结而结合。接合材料可以耐高温，并且可以具有通过改变 溶胶 - 凝胶溶液的组成。 光学和电子制品通过制备符合基板的心轴构成，该基底可以是任意形状; 在心轴上沉积涂层; 使用烧结的溶胶 - 凝胶将涂层粘合到基底上; 并通过蚀刻去除心轴。 因此，在对光学和微电子材料有破坏性的温度下通过化学气相沉积形成的金刚石膜因此安装在这些材料的各种形状的元件上，以防止侵蚀和高温，并提供低摩擦和高热传导。 用作溶胶 - 凝胶前体的原硅酸四乙酯在高达800℃下产生有效的二氧化硅粘合层。可以使用其它前体，并且二氧化钛溶胶 - 凝胶前体为硫化锌或硒化锌底物提供匹配的折射率。 被选择用于适应热膨胀差异的溅射沉积金属的中间层可以设置在要被结合的元件和接合材料之间。

公开(公告)号：US5472787A

公开(公告)日：1995-12-05

申请号：US931463

申请日：1992-08-11

申请人： Linda F. Johnson ,  Karl A. Klemm ,  Mark B. Moran

发明人： Linda F. Johnson ,  Karl A. Klemm ,  Mark B. Moran

IPC分类号： C23C14/02 ,  C23C14/06 ,  C23C14/08 ,  G02B1/11 ,  B32B9/04

CPC分类号： C23C14/083 ,  C23C14/024 ,  C23C14/0617 ,  G02B1/115 ,  Y10T428/261

摘要： Coatings for a diamond surface of an optical element control reflections and oxidation at the surface. Transmissive element coatings effective in the infrared and at up to 800.degree. C. have a first layer of amorphous hydrogenated silicon deposited directly on the diamond and have a second layer of aluminum nitride, yttrium oxide, hafnium oxide or other refractory oxide deposited directly on the first layer. The first layer may be relatively thin and for adhesion only with the second layer constructed of an oxide and having a thickness selected to control reflection, or the thicknesses of both layers may be selected together to control reflection with the proportion of hydrogen in the first layer varied to select its refractive index.

摘要翻译： 用于光学元件的金刚石表面的涂层控制表面的反射和氧化。 在红外线和高达800℃有效的透射元件涂层具有直接沉积在金刚石上的第一层无定形氢化硅，并且具有第二层氮化铝，氧化钇，氧化铪或直接沉积在其上的其它难熔氧化物 第一层 第一层可以相对薄，并且仅对于由氧化物构成的第二层并且具有选择用于控制反射的厚度的粘合，或者可以一起选择两层的厚度以控制第一层中的氢的比例的反射 变化以选择其折射率。

公开(公告)号：US5169676A

公开(公告)日：1992-12-08

申请号：US702663

申请日：1991-05-16

申请人： Mark B. Moran ,  Linda F. Johnson ,  Karl A. Klemm

发明人： Mark B. Moran ,  Linda F. Johnson ,  Karl A. Klemm

IPC分类号： C23C16/27 ,  C23C16/511 ,  C23C16/52 ,  C30B25/02 ,  C30B25/10

CPC分类号： C23C16/274 ,  C23C16/277 ,  C23C16/511 ,  C23C16/52 ,  C30B25/02 ,  C30B25/105 ,  C30B29/04 ,  Y10T428/30

摘要： In depositing an adhering, continuous, polycrystalline diamond film of optical or semiconductor quality on a substrate, as by forming on the substrate a layer of a refractory nitride interlayer and depositing diamond on the interlayer without mechanical treatment or seeding of the substrate or the interlayer, the substrate is heated in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon, and the size of deposited diamond crystallites and their rate of deposition selectively varied by a bias voltage applied to the substrate.

摘要翻译： 在衬底上沉积光学或半导体质量的粘附的，连续的多晶金刚石膜时，通过在衬底上形成难熔氮化物中间层和在中间层上沉积金刚石而不进行机械处理或接种衬底或中间层， 在包含氢和包括碳的气体的微波激活混合物的真空室中加热基板，并且沉积的金刚石微晶的尺寸及其沉积速率通过施加到基板上的偏置电压而有选择地变化。

公开(公告)号：USH1792H

公开(公告)日：1999-04-06

申请号：US919095

申请日：1997-07-14

申请人： Mark B. Moran ,  Linda F. Johnson ,  Karl A. Klemm

发明人： Mark B. Moran ,  Linda F. Johnson ,  Karl A. Klemm

IPC分类号： C23C16/02 ,  C23C16/27 ,  C23C16/00

CPC分类号： C23C16/274 ,  C23C16/0272 ,  C23C16/279

摘要： In depositing an adhering, continuous, polycrystalline diamond film on a substrate by forming a refractory nitride interlayer on the substrate and depositing diamond on the interlayer in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon, the crystal orientation of the deposited diamond, or , is selected by controlling the pressure in the chamber. Preferably, relatively higher microwave power is utilized at higher pressures.

摘要翻译： 在通过在衬底上形成耐火氮化物中间层并在包含氢和包括碳的气体的微波激活的混合物的真空室中的金刚石上沉积金刚石，在衬底上沉积粘附的，连续的多晶金刚石膜时，晶体取向为 通过控制室中的压力来选择沉积的金刚石<111>或<100>。 优选地，在较高压力下使用相对较高的微波功率。

公开(公告)号：US5837322A

公开(公告)日：1998-11-17

申请号：US914010

申请日：1997-08-11

申请人： Mark B. Moran ,  Linda F. Johnson ,  Karl A. Klemm

发明人： Mark B. Moran ,  Linda F. Johnson ,  Karl A. Klemm

IPC分类号： C23C16/02 ,  C23C16/27 ,  C23C16/26 ,  C23C16/34

CPC分类号： C23C16/27 ,  C23C16/0272 ,  C23C16/277

摘要： An adhering, continuous, polycrystalline diamond film is deposited on a z sulfide substrate by forming a refractory nitride interlayer directly on the substrate and then depositing diamond on the interlayer in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon. The diamond film may be of optical quality and may be deposited without mechanical treatment or seeding of the zinc sulfide substrate or the nitride interlayer. However, diamond deposition may be facilitated by abrasion of the interlayer before diamond deposition.

摘要翻译： 通过在衬底上直接形成耐火氮化物中间层，然后在包含氢和包括碳的气体的微波激活的混合物的真空室中在金属中间层上沉积金刚石，将沉积的连续多晶金刚石膜沉积在硫化锌衬底上。 金刚石膜可以具有光学质量，并且可以在不对硫化锌衬底或氮化物中间层进行机械处理或接种的情况下沉积。 然而，金刚石沉积可以通过在金刚石沉积之前的中间层的磨损来促进。

公开(公告)号：US5800879A

公开(公告)日：1998-09-01

申请号：US702208

申请日：1991-05-16

申请人： Mark B. Moran ,  Linda F. Johnson ,  Karl A. Klemm

发明人： Mark B. Moran ,  Linda F. Johnson ,  Karl A. Klemm

IPC分类号： C23C16/02 ,  C23C16/27 ,  B05D3/06 ,  C23C16/26

CPC分类号： C23C16/27 ,  C23C16/0272 ,  C23C16/277

摘要： An adhering, continuous diamond film of optical or semiconductor quality is deposited on a substrate by forming on the substrate a layer of a nitride and then depositing diamond on the nitride without mechanical treatment or seeding of the substrate or the nitride. A substrate of silicon or silicon carbide has been used by depositing a layer of silicon dioxide directly on the substrate and then directly depositing the nitride layer on the silicon dioxide. A polycrystalline diamond film has been deposited by heating the substrate and nitride layer in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon with the nitride being a refractory nitride to withstand the temperature at which the diamond is deposited. Deposition of the diamond is facilitated by adding oxygen to the mixture after a sufficient thickness of diamond is deposited to protect the nitride layer from oxidation.

摘要翻译： 通过在衬底上形成一层氮化物，然后在氮化物上沉积金刚石，而不用对衬底或氮化物进行机械处理或接种，将沉积光学或半导体质量的粘附的连续金刚石膜沉积在衬底上。 通过在衬底上直接沉积二氧化硅层，然后将氮化物层直接沉积在二氧化硅上，已经使用了硅或碳化硅的衬底。 通过在真空室中加热衬底和氮化物层，沉积多晶金刚石膜，所述真空室含有氢和包含碳的气体的微波活化混合物，氮化物是难熔氮化物，以承受沉积金刚石的温度。 在沉积足够厚度的金刚石以保护氮化物层免受氧化后，通过向混合物中加入氧来促进金刚石的沉积。