Zero power chip standby mode
    1.
    发明授权

    公开(公告)号:US06925024B2

    公开(公告)日:2005-08-02

    申请号:US10232935

    申请日:2002-08-28

    IPC分类号: G11C5/14 G11C7/00 G11C5/06

    CPC分类号: G11C5/141

    摘要: A zero power standby mode in a memory device used in a system, such as a battery powered hand held device. By disconnecting the internal power supply bus on the memory device from the external power supply during standby mode, the junction leakage and gate induced drain leakage can be eliminated to achieve a true zero-power standby mode. A p-channel field effect transistor (FET) may be used to gate the external power supply such that the internal power supply bus on the memory device may be disconnected from the external power supply.

    Zero power chip standby mode
    2.
    发明授权

    公开(公告)号:US06879538B2

    公开(公告)日:2005-04-12

    申请号:US10228932

    申请日:2002-08-28

    IPC分类号: G11C5/14 G11C7/00

    CPC分类号: G11C5/141

    摘要: A zero power standby mode in a memory device used in a system, such as a battery powered hand held device. By disconnecting the internal power supply bus on the memory device from the external power supply during standby mode, the junction leakage and gate induced drain leakage can be eliminated to achieve a true zero-power standby mode. A p-channel field effect transistor (FET) may be used to gate the external power supply such that the internal power supply bus on the memory device may be disconnected from the external power supply.

    Zero power chip standby mode
    3.
    发明授权

    公开(公告)号:US06845054B2

    公开(公告)日:2005-01-18

    申请号:US10230046

    申请日:2002-08-28

    IPC分类号: G11C5/14 G11C7/00 G11C5/06

    CPC分类号: G11C5/141

    摘要: A zero power standby mode in a memory device used in a system, such as a battery powered hand held device. By disconnecting the internal power supply bus on the memory device from the external power supply during standby mode, the junction leakage and gate induced drain leakage can be eliminated to achieve a true zero-power standby mode. A p-channel field effect transistor (FET) may be used to gate the external power supply such that the internal power supply bus on the memory device may be disconnected from the external power supply.

    Zero power chip standby mode
    4.
    发明授权
    Zero power chip standby mode 失效
    零功率芯片待机模式

    公开(公告)号:US06909659B2

    公开(公告)日:2005-06-21

    申请号:US09942898

    申请日:2001-08-30

    IPC分类号: G11C5/14 H11C7/00 H11C5/06

    CPC分类号: G11C5/141

    摘要: A zero power standby mode in a memory device used in a system, such as a battery powered hand held device. By disconnecting the internal power supply bus on the memory device from the external power supply during standby mode, the junction leakage and gate induced drain leakage can be eliminated to achieve a true zero-power standby mode. A p-channel field effect transistor (FET) may be used to gate the external power supply such that the internal power supply bus on the memory device may be disconnected from the external power supply.

    摘要翻译: 在系统中使用的存储设备中的零功率待机模式,例如电池供电的手持设备。 通过在待机模式下断开存储器件内部电源总线与外部电源的连接,可以消除结漏电和漏极泄漏漏电,从而达到真正的零功率待机模式。 可以使用p沟道场效应晶体管(FET)来栅极外部电源,使得存储器件上的内部电源总线可以与外部电源断开。