LED Lighting Device for Producing Multi-Chromatic Light Radiation
    1.
    发明申请
    LED Lighting Device for Producing Multi-Chromatic Light Radiation 审中-公开
    用于生产多色光辐射的LED照明装置

    公开(公告)号:US20120314412A1

    公开(公告)日:2012-12-13

    申请号:US13513853

    申请日:2010-12-01

    IPC分类号: F21V9/10

    摘要: A lighting device (100) including light radiation sources that can be mixed (102) to produce multi-chromatic light radiation (W; W1, W2, W3, W4; WS) as an additive mixture of the radiations generated by said sources, comprising a plurality of sets (1, 1′; 2, 2′; 3, 3′; 1, 2, 3; 1′, 2′, 3′; 1, 1′; 2, 2′; 3, 3′; 4, 4′; 1, 2, 3, 4, 5, 6) of light radiation sources, wherein each set includes light radiation sources that can be mixed (102) to produce multi-chromatic light radiation through additive mixing of the radiations generated by the sources in the set; and a control device (10, 10′, 1000) to selectively activate the sets (1, 1′; 2, 2′; 3, 3′; 1, 2, 3; 1′, 2′, 3′; 1, 1′; 2, 2′; 3, 3′; 4, 4′; 1, 2, 3, 4, 5, 6) of radiation sources in said plurality

    摘要翻译: 1.一种照明装置(100),包括可以混合(102)以产生多色光辐射(W; W1,W2,W3,W4; WS)的光辐射源,作为由所述源产生的辐射的添加混合物,包括 多个组(1,1'; 2,2'; 3,3'; 1,2,3,...,1“,2”,3“; 1,1'; 2,2'; 3,3' 4,4'; 1,2,3,4,5,6),其中每个组包括可以混合的光辐射源(102),以通过产生的辐射的加和混合产生多色光辐射 由集合中的来源; 和一个控制装置(10,10',1000),用于选择性地启动组(1,1'; 2,2'; 3,3'; 1,2,3'; 1',2',3'; 1, 1'; 2,2'; 3,3'; 4,4'; 1,2,3,4,5,6)所述多个辐射源

    Coupling structure for optical fibres and process for making it
    2.
    发明申请
    Coupling structure for optical fibres and process for making it 失效
    光纤耦合结构及其制作工艺

    公开(公告)号:US20090136237A1

    公开(公告)日:2009-05-28

    申请号:US10554618

    申请日:2003-04-29

    摘要: A coupling structure for coupling optical radiation, i.e., light, between an optical fibre and an optical device, e.g., a laser diode or a photodiode. The coupling structure has an optical through-via which guides the optical radiation to or from the optical fibre. Light exiting the fibre travels through a guidance channel so it remains substantially confined to a narrow optical path that mimics the fibre core. Conversely, light enters the fibre after having traveled through the guidance channel. The guidance channel has a first core region, the “channel core”, having first refractive index surrounded by a second region, the “channel cladding” having a second refractive index smaller than the first refractive index. The coupling structure, including the guidance channel, is preferably made of semiconductor-based material, more preferably of silicon-based material. The guidance channel is preferably silicon oxide. The coupling structure further has a fibre drive-in element, which facilitates insertion and alignment of the optical fibre to the guidance channel.

    摘要翻译: 用于耦合光纤与光学器件(例如激光二极管或光电二极管)之间的光辐射(即光)的耦合结构。 耦合结构具有将光学辐射引导到光纤或从光纤引导的光学通孔。 离开纤维的光线穿过引导通道,因此其基本上被限制在模拟纤维芯的窄光路上。 相反,光线穿过引导通道后进入光纤。 引导通道具有第一芯区域,具有由第二区域包围的第一折射率的“沟道芯”,具有小于第一折射率的第二折射率的“沟道包层”。 包括引导通道的连接结构优选由半导体材料制成,更优选由硅基材料制成。 引导通道优选为氧化硅。 耦合结构还具有光纤驱入元件,其有助于将光纤插入和对准引导通道。

    Method and system for bidirectional optical communication
    4.
    发明授权
    Method and system for bidirectional optical communication 有权
    双向光通信的方法和系统

    公开(公告)号:US08971721B2

    公开(公告)日:2015-03-03

    申请号:US13320341

    申请日:2009-05-20

    摘要: A method for bidirectional optical communication comprising the steps of:—at a first optical line terminal, directly modulating a laser source to generate a downstream optical signal which has an optical power spectrum comprising two peaks having a frequency separation and a non zero power difference at generation;—propagating said downstream optical signal at a distance along an optical line comprising at least a first optical fiber propagating said downstream optical signal to a second optical line terminal;—at the second optical line terminal: power splitting said downstream optical signal to generate a first and a second power portion of said downstream optical signal, spatially separated; passive filtering said first power portion of said downstream optical signal so as to increase in absolute value a respective power difference of said two peaks, so as to obtain a filtered optical signal which is thereafter detected; and amplitude modulating the second power portion of the downstream optical signal so as to obtain an upstream optical signal having a second amplitude modulation;—propagating back along said optical line the upstream optical signal to the first optical line terminal;—at said first optical line terminal, detecting said upstream optical signal; wherein the method further comprises the step of passive filtering said downstream optical signal and/or said second power portion of the downstream optical signal and/or said upstream optical signal, so as to lower, in absolute value, a respective non zero power difference of said two peaks.

    摘要翻译: 一种用于双向光通信的方法,包括以下步骤:在第一光线路终端处,直接调制激光源以产生下行光信号,所述下行光信号具有包括频率分离和非零功率差异的两个峰值的光功率谱 将所述下游光信号沿着包括至少第一光纤的光路线的一段距离传播到第二光线路终端;在第二光线路终端处:将所述下行光信号功率分配以产生 所述下游光信号的第一和第二功率部分在空间上分离; 无源滤波所述下行光信号的第一功率部分,以便绝对值增加所述两个峰值的相应功率差,从而获得随后检测的滤波后的光信号; 以及对下游光信号的第二功率部分进行幅度调制,以获得具有第二幅度调制的上行光信号;沿所述光线路向上移动上游光信号到第一光线路终端; - 在所述第一光线路 终端,检测所述上游光信号; 其中所述方法还包括以下步骤:对所述下游光信号和/或所述上游光信号的所述下游光信号和/或所述第二功率部分进行无源滤波,以便以绝对值降低相应的非零功率差 说了两个高峰。

    Integrated device manufacturing process
    5.
    发明授权
    Integrated device manufacturing process 有权
    集成器件制造工艺

    公开(公告)号:US07687301B2

    公开(公告)日:2010-03-30

    申请号:US12015271

    申请日:2008-01-16

    IPC分类号: H01L21/00

    摘要: A process for manufacturing an integrated device includes the steps of: providing a silicon substrate on which a silicon dioxide structure is arranged and forming a trench having first and second essentially vertical walls relative to the substrate in the structure by means of anisotropic-type etching. A concavity having a sloped wall relative to the substrate is formed by isotropic-type etching which removes the second wall so that the concavity is open to the trench and the sloped wall faces the first wall.

    摘要翻译: 一种用于制造集成器件的工艺包括以下步骤:提供硅衬底,在衬底上布置二氧化硅结构,并通过各向异性蚀刻形成具有相对于衬底的第一和第二基本上垂直的壁的沟槽。 通过各向同性型蚀刻形成具有相对于基板的倾斜壁的凹面,其移除第二壁,使得凹部对沟槽开放,并且倾斜壁面向第一壁。

    Coupling structure for optical fibres and process for making it
    6.
    发明授权
    Coupling structure for optical fibres and process for making it 失效
    光纤耦合结构及其制作工艺

    公开(公告)号:US07645076B2

    公开(公告)日:2010-01-12

    申请号:US10554618

    申请日:2003-04-29

    IPC分类号: G02B6/36 H01L21/00

    摘要: A coupling structure for coupling optical radiation, i.e., light, between an optical fibre and an optical device, e.g., a laser diode or a photodiode. The coupling structure has an optical through-via which guides the optical radiation to or from the optical fibre. Light exiting the fibre travels through a guidance channel so it remains substantially confined to a narrow optical path that mimics the fibre core. Conversely, light enters the fibre after having traveled through the guidance channel. The guidance channel has a first core region, the “channel core”, having first refractive index surrounded by a second region, the “channel cladding” having a second refractive index smaller than the first refractive index. The coupling structure, including the guidance channel, is preferably made of semiconductor-based material, more preferably of silicon-based material. The guidance channel is preferably silicon oxide. The coupling structure further has a fibre drive-in element, which facilitates insertion and alignment of the optical fibre to the guidance channel.

    摘要翻译: 用于耦合光纤与光学器件(例如激光二极管或光电二极管)之间的光辐射(即光)的耦合结构。 耦合结构具有将光学辐射引导到光纤或从光纤引导的光学通孔。 离开纤维的光线穿过引导通道,因此其基本上被限制在模拟纤维芯的窄光路上。 相反,光线穿过引导通道后进入光纤。 引导通道具有第一芯区域,具有由第二区域包围的第一折射率的“沟道芯”,具有小于第一折射率的第二折射率的“沟道包层”。 包括引导通道的耦合结构优选由半导体材料制成,更优选由硅基材料制成。 引导通道优选为氧化硅。 耦合结构还具有光纤驱入元件,其有助于将光纤插入和对准引导通道。

    Method of protection from over-temperature and corresponding arrangement
    8.
    发明授权
    Method of protection from over-temperature and corresponding arrangement 失效
    防过温保护方法及相应安排

    公开(公告)号:US08514528B2

    公开(公告)日:2013-08-20

    申请号:US12919767

    申请日:2008-02-27

    IPC分类号: H02H5/04

    CPC分类号: H02M1/32

    摘要: A method of protecting from over-temperature a device associated with an electronic converter including a feedback path for regulating the output signal of said electronic converter may include providing a thermal sensitive component sensitive to the temperature of said device, and including said thermal sensitive component in said feedback path of said electronic converter, whereby said output signal of said electronic converter is reduced as a function of the temperature of said device as sensed by said thermal sensitive component.

    摘要翻译: 防止与包括用于调节所述电子转换器的输出信号的反馈路径的电子转换器相关联的装置的过温保护的方法可以包括提供对所述装置的温度敏感的热敏部件,并且包括所述热敏部件 所述电子转换器的所述反馈路径,由此所述电子转换器的所述输出信号作为由所述热敏元件感测的所述装置的温度的函数而减小。

    Optical integrated device manufacturing process
    9.
    发明授权
    Optical integrated device manufacturing process 有权
    光学集成器件制造工艺

    公开(公告)号:US07998356B2

    公开(公告)日:2011-08-16

    申请号:US12015338

    申请日:2008-01-16

    IPC分类号: B29D11/00

    摘要: The invention relates to a process for manufacturing an integrated optical device. The method involves forming a silicon dioxide multilayer structure on a silicon substrate containing, in a first region a core layer of a waveguide of the optical device. The core includes an electromagnetic radiation inlet/outlet A trench in a second region of the multilayer structure adjacent said first region is formed by a an anisotropic etching, the trench including side walls and a bottom wall spaced from the Substrate. The method further involves forming a coating layer of the side walls and the bottom wall of the trench; defining an opening in the bottom wall by at least partially removing the coating layer in order to expose the lower silicon dioxide of the multilayer structure; performing an isotropic etch through said opening in order to remove, starting from the exposed silicon dioxide, the multilayer structure silicon dioxide until forming a recess in the multilayer structure having a first wall at least one essentially planar portion inclined relative to the substrate. Such inclined portion extends at least partially in the first region, and includes the inlet/outlet port.

    摘要翻译: 本发明涉及一种用于制造集成光学装置的方法。 该方法包括在硅衬底上形成二氧化硅多层结构,该硅衬底在第一区域中包含光学器件的波导的芯层。 核心包括电磁辐射入口/出口。 通过各向异性蚀刻形成与所述第一区相邻的所述多层结构的第二区域中的沟槽,所述沟槽包括侧壁和与所述基板间隔开的底壁。 该方法还包括形成沟槽的侧壁和底壁的涂层; 通过至少部分地去除所述涂层来限定所述底壁中的开口,以暴露所述多层结构的较低二氧化硅; 通过所述开口执行各向同性蚀刻,以从所述暴露的二氧化硅开始,从所述多层结构二氧化硅移除所述多层结构,直到在所述多层结构中形成具有第一壁的凹部,所述第一壁至少一个相对于所述衬底倾斜的基本上平面的部分。 这种倾斜部分至少部分地在第一区域中延伸,并且包括入口/出口。

    OPTICAL INTEGRATED DEVICE MANUFACTURING PROCESS
    10.
    发明申请
    OPTICAL INTEGRATED DEVICE MANUFACTURING PROCESS 有权
    光学集成设备制造工艺

    公开(公告)号:US20090308839A1

    公开(公告)日:2009-12-17

    申请号:US12015338

    申请日:2008-01-16

    IPC分类号: B29D11/00

    摘要: The invention relates to a process for manufacturing an integrated optical device. The method involves forming a silicon dioxide multilayer structure on a silicon substrate containing, in a first region a core layer of a waveguide of the optical device. The core includes an electromagnetic radiation inlet/outlet A trench in a second region of the multilayer structure adjacent said first region is formed by a an anisotropic etching, the trench including side walls and a bottom wall spaced from the Substrate. The method further involves forming a coating layer of the side walls and the bottom wall of the trench; defining an opening in the bottom wall by at least partially removing the coating layer in order to expose the lower silicon dioxide of the multilayer structure; performing an isotropic etch through said opening in order to remove, starting from the exposed silicon dioxide, the multilayer structure silicon dioxide until forming a recess in the multilayer structure having a first wall at least one essentially planar portion inclined relative to the substrate. Such inclined portion extends at least partially in the first region, and includes the inlet/outlet port.

    摘要翻译: 本发明涉及一种用于制造集成光学装置的方法。 该方法包括在硅衬底上形成二氧化硅多层结构,该硅衬底在第一区域中包含光学器件的波导的芯层。 核心包括电磁辐射入口/出口。 通过各向异性蚀刻形成与所述第一区相邻的所述多层结构的第二区域中的沟槽,所述沟槽包括侧壁和与所述基板间隔开的底壁。 该方法还包括形成沟槽的侧壁和底壁的涂层; 通过至少部分地去除所述涂层来限定所述底壁中的开口,以暴露所述多层结构的较低二氧化硅; 通过所述开口执行各向同性蚀刻,以从所述暴露的二氧化硅开始,从所述多层结构二氧化硅移除所述多层结构,直到在所述多层结构中形成具有第一壁的凹部,所述第一壁至少一个相对于所述衬底倾斜的基本上平面的部分。 这种倾斜部分至少部分地在第一区域中延伸,并且包括入口/出口。