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1.发明授权公开(公告)号：US08954186B2
公开(公告)日：2015-02-10
申请号：US12847721
申请日：2010-07-30
申请人： Jun Qian , Boguslaw A. Swedek , Harry Q. Lee , Jeffrey Drue David , Sivakumar Dhandapani , Thomas H. Osterheld
发明人： Jun Qian , Boguslaw A. Swedek , Harry Q. Lee , Jeffrey Drue David , Sivakumar Dhandapani , Thomas H. Osterheld
IPC分类号： G05B23/02
CPC分类号： G05B23/0208 , G05B2219/31459 , G05B2219/45232
摘要： A method of configuring a polishing monitoring system includes receiving user input selecting a plurality of libraries, each library of the plurality of libraries comprising a plurality of reference spectra for use in matching to measured spectra during polishing, each reference spectrum of the plurality of reference spectra having an associated index value, for a first zone of a substrate, receiving user input selecting a first subset of the plurality of libraries, and for a second zone of the substrate, receiving user input selecting a second subset of the plurality of libraries.
摘要翻译： 配置抛光监视系统的方法包括接收选择多个库的用户输入，多个库的每个库包括多个参考光谱，用于与抛光期间的测量光谱匹配，多个参考光谱的每个参考光谱 具有相关联的索引值，对于衬底的第一区域，接收选择所述多个库的第一子集的用户输入以及所述衬底的第二区域，接收选择所述多个库的第二子集的用户输入。
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公开(公告)号：US20110281501A1
公开(公告)日：2011-11-17
申请号：US12781644
申请日：2010-05-17
摘要： A substrate having a plurality of zones is polished and spectra are measured. For each zone, a first linear function fits a sequence of index values associated with reference spectra that best match the measured spectra. A projected time at which a reference zone will reach the target index value is determined based on the first linear function, and for at least one adjustable zone, a polishing parameter adjustment is calculated such that the adjustable zone has closer to the target index at the projected time than without such adjustment. The adjustment is calculated based on a feedback error calculated for a previous substrate. The feedback error for a subsequent substrate is calculated based on a second linear function that fits a sequence of index values associated with reference spectra that best match spectra measured after the polishing parameter is adjusted.
摘要翻译： 研磨具有多个区域的基板并测量光谱。 对于每个区域，第一个线性函数拟合与参考光谱相关联的索引值序列，该参考光谱与测量的光谱最匹配。 基于第一线性函数确定参考区域将达到目标指标值的预计时间，并且对于至少一个可调整区域，计算抛光参数调整，使得可调节区域更接近目标索引处的目标索引 预计时间比没有这样的调整。 基于对先前基板计算的反馈误差来计算调整。 基于适合与调整抛光参数之后测量的最佳匹配光谱的参考光谱相关联的索引值序列的第二线性函数来计算后续衬底的反馈误差。
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公开(公告)号：US09138860B2
公开(公告)日：2015-09-22
申请号：US13087180
申请日：2011-04-14
申请人： Sivakumar Dhandapani , Jun Qian , Christopher D. Cocca , Jason G. Fung , Shou-Sung Chang , Charles C. Garretson , Gregory E. Menk , Stan D. Tsai
发明人： Sivakumar Dhandapani , Jun Qian , Christopher D. Cocca , Jason G. Fung , Shou-Sung Chang , Charles C. Garretson , Gregory E. Menk , Stan D. Tsai
IPC分类号： B24B53/02 , B24B53/017 , B24B37/04
CPC分类号： B24B53/017 , B24B37/042
摘要： Embodiments described herein use closed-loop control (CLC) of conditioning sweep to enable uniform groove depth removal across the pad, throughout pad life. A sensor integrated into the conditioning arm enables the pad stack thickness to be monitored in-situ and in real time. Feedback from the thickness sensor is used to modify pad conditioner dwell times across the pad surface, correcting for drifts in the pad profile that may arise as the pad and disk age. Pad profile CLC enables uniform reduction in groove depth with continued conditioning, providing longer consumables lifetimes and reduced operating costs.
摘要翻译： 本文描述的实施例使用调节扫描的闭环控制（CLC），以在整个衬垫寿命期间跨越焊盘实现均匀的凹槽深度去除。 集成到调节臂中的传感器使得可以在现场和实时监测焊盘堆叠厚度。 来自厚度传感器的反馈用于修改焊盘表面上的焊盘调节器停留时间，从而校正焊盘轮廓上随焊盘和磁盘寿命可能出现的漂移。 焊盘轮廓CLC可以通过持续的调节来均匀地减小槽深度，提供更长的消耗品寿命和降低的操作成本。
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公开(公告)号：US20130273812A1
公开(公告)日：2013-10-17
申请号：US13919144
申请日：2013-06-17
IPC分类号： B24B49/04
摘要： A substrate having a plurality of zones is polished and spectra are measured. For each zone, a first linear function fits a sequence of index values associated with reference spectra that best match the measured spectra. A projected time at which a reference zone will reach the target index value is determined based on the first linear function, and for at least one adjustable zone, a polishing parameter adjustment is calculated such that the adjustable zone has closer to the target index at the projected time than without such adjustment. The adjustment is calculated based on a feedback error calculated for a previous substrate. The feedback error for a subsequent substrate is calculated based on a second linear function that fits a sequence of index values associated with reference spectra that best match spectra measured after the polishing parameter is adjusted.
摘要翻译： 研磨具有多个区域的基板并测量光谱。 对于每个区域，第一个线性函数拟合与参考光谱相关联的索引值序列，该参考光谱与测量的光谱最匹配。 基于第一线性函数确定参考区域将达到目标指标值的预计时间，并且对于至少一个可调整区域，计算抛光参数调整，使得可调节区域更接近目标索引处的目标索引 预计时间比没有这样的调整。 基于对先前基板计算的反馈误差来计算调整。 基于适合与调整抛光参数之后测量的最佳匹配光谱的参考光谱相关联的索引值序列的第二线性函数来计算后续衬底的反馈误差。
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公开(公告)号：US20140113524A1
公开(公告)日：2014-04-24
申请号：US13658737
申请日：2012-10-23
申请人： Jun Qian , Sivakumar Dhandapani , Benjamin Cherian , Thomas H. Osterheld , Jeffrey Drue David , Gregory E. Menk , Boguslaw A. Swedek , Doyle E. Bennett
发明人： Jun Qian , Sivakumar Dhandapani , Benjamin Cherian , Thomas H. Osterheld , Jeffrey Drue David , Gregory E. Menk , Boguslaw A. Swedek , Doyle E. Bennett
IPC分类号： B24B37/013 , B24B49/12
CPC分类号： B24B37/013 , B24B49/12
摘要： A method of controlling polishing includes polishing a substrate, monitoring the substrate during polishing with an in-situ spectrographic monitoring system to generate a sequence of measured spectra, selecting less than all of the measured spectra to generate a sequence of selected spectra, generating a sequence of values from the sequence of selected spectra, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the sequence of values.
摘要翻译： 控制抛光的方法包括抛光衬底，用原位光谱监测系统在抛光期间监测衬底以产生测量光谱序列，选择少于所有测量光谱以产生选定光谱序列，产生序列 根据所选光谱的序列的值，并且基于所述值序列来确定抛光终点或抛光速率的调整中的至少一个。
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公开(公告)号：US08467896B2
公开(公告)日：2013-06-18
申请号：US13480434
申请日：2012-05-24
摘要： A substrate having a plurality of zones is polished and spectra are measured. For each zone, a first linear function fits a sequence of index values associated with reference spectra that best match the measured spectra. A projected time at which a reference zone will reach the target index value is determined based on the first linear function, and for at least one adjustable zone, a polishing parameter adjustment is calculated such that the adjustable zone has closer to the target index at the projected time than without such adjustment. The adjustment is calculated based on a feedback error calculated for a previous substrate. The feedback error for a subsequent substrate is calculated based on a second linear function that fits a sequence of index values associated with reference spectra that best match spectra measured after the polishing parameter is adjusted.
摘要翻译： 研磨具有多个区域的基板并测量光谱。 对于每个区域，第一个线性函数拟合与参考光谱相关联的索引值序列，该参考光谱与测量的光谱最匹配。 基于第一线性函数确定参考区域将达到目标指标值的预计时间，并且对于至少一个可调整区域，计算抛光参数调整，使得可调节区域更接近目标索引处的目标索引 预计时间比没有这样的调整。 基于对先前基板计算的反馈误差来计算调整。 基于适合与调整抛光参数之后测量的最佳匹配光谱的参考光谱相关联的索引值序列的第二线性函数来计算后续衬底的反馈误差。
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公开(公告)号：US20110256812A1
公开(公告)日：2011-10-20
申请号：US13087180
申请日：2011-04-14
申请人： Sivakumar Dhandapani , Jun Qian , Christopher D. Cocca , Jason G. Fung , Shou-Sung Chang , Charles C. Garretson , Gregory E. Menk , Stan D. Tsai
发明人： Sivakumar Dhandapani , Jun Qian , Christopher D. Cocca , Jason G. Fung , Shou-Sung Chang , Charles C. Garretson , Gregory E. Menk , Stan D. Tsai
IPC分类号： B24B53/02
CPC分类号： B24B53/017 , B24B37/042
摘要： Embodiments described herein use closed-loop control (CLC) of conditioning sweep to enable uniform groove depth removal across the pad, throughout pad life. A sensor integrated into the conditioning arm enables the pad stack thickness to be monitored in-situ and in real time. Feedback from the thickness sensor is used to modify pad conditioner dwell times across the pad surface, correcting for drifts in the pad profile that may arise as the pad and disk age. Pad profile CLC enables uniform reduction in groove depth with continued conditioning, providing longer consumables lifetimes and reduced operating costs.
摘要翻译： 本文描述的实施例使用调节扫描的闭环控制（CLC），以在整个衬垫寿命期间跨越焊盘实现均匀的凹槽深度去除。 集成到调节臂中的传感器使得可以在现场和实时监测焊盘堆叠厚度。 来自厚度传感器的反馈用于修改焊盘表面上的焊盘调节器停留时间，从而校正焊盘轮廓上随焊盘和磁盘寿命可能出现的漂移。 焊盘轮廓CLC可以通过持续的调节来均匀地减小槽深度，提供更长的消耗品寿命和降低的操作成本。
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公开(公告)号：US20080138988A1
公开(公告)日：2008-06-12
申请号：US11952777
申请日：2007-12-07
申请人： Jeffrey Drue David , Jun Qian , Garrett Sin , Daxin Mao , Chris Heung-Gyun Lee , Sivakumar Dhandapani , Boguslaw A. Swedek , Dominic J. Benvegnu , Lakshmanan Karuppiah
发明人： Jeffrey Drue David , Jun Qian , Garrett Sin , Daxin Mao , Chris Heung-Gyun Lee , Sivakumar Dhandapani , Boguslaw A. Swedek , Dominic J. Benvegnu , Lakshmanan Karuppiah
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , H01L22/26
摘要： During polishing of a substrate, polysilicon can be removed from a surface of the substrate. Detecting an endpoint during polishing of polysilicon can include polishing the substrate having a polysilicon residue on an area of oxide area and optically detecting clearance of the polysilicon residue.
摘要翻译： 在抛光衬底期间，可以从衬底的表面去除多晶硅。 在研磨多晶硅期间检测端点可以包括在氧化物区域的区域上抛光具有多晶硅残渣的基板，并光学地检测多晶硅残渣的间隙。
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公开(公告)号：US20190096722A1
公开(公告)日：2019-03-28
申请号：US16137009
申请日：2018-09-20
申请人： Sivakumar Dhandapani , Jun Qian
发明人： Sivakumar Dhandapani , Jun Qian
IPC分类号： H01L21/67 , B24B37/005 , B24B37/20 , B24B37/32 , H01L21/66 , H01L21/321
摘要： A method of processing substrates includes: subjecting each respective first substrate of a first plurality of substrates to a process that modifies a thickness of an outer layer of the respective first substrate; generating a plurality of groups of process parameter values, wherein the plurality of process parameters comprise a plurality of control parameters and a plurality of state parameters; generating a plurality of measured removal profiles; generating a matrix that relates the plurality of process parameters to a calculated removal profile; for each respective second substrate of a second plurality of substrates, determining a target removal profile and a plurality of state parameter values; calculating respective control parameter values to apply to the respective second substrate by applying the target removal profile and the state parameter values to the matrix; and subjecting each respective second substrate to the process using the respective process parameter values.
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公开(公告)号：US20120231701A1
公开(公告)日：2012-09-13
申请号：US13480434
申请日：2012-05-24
IPC分类号： B24B51/00
摘要： A substrate having a plurality of zones is polished and spectra are measured. For each zone, a first linear function fits a sequence of index values associated with reference spectra that best match the measured spectra. A projected time at which a reference zone will reach the target index value is determined based on the first linear function, and for at least one adjustable zone, a polishing parameter adjustment is calculated such that the adjustable zone has closer to the target index at the projected time than without such adjustment. The adjustment is calculated based on a feedback error calculated for a previous substrate. The feedback error for a subsequent substrate is calculated based on a second linear function that fits a sequence of index values associated with reference spectra that best match spectra measured after the polishing parameter is adjusted.
摘要翻译： 研磨具有多个区域的基板并测量光谱。 对于每个区域，第一个线性函数拟合与参考光谱相关联的索引值序列，该参考光谱与测量的光谱最匹配。 基于第一线性函数确定参考区域将达到目标指标值的预计时间，并且对于至少一个可调整区域，计算抛光参数调整，使得可调节区域更接近目标索引处的目标索引 预计时间比没有这样的调整。 基于对先前基板计算的反馈误差来计算调整。 基于适合与调整抛光参数之后测量的最佳匹配光谱的参考光谱相关联的索引值序列的第二线性函数来计算后续衬底的反馈误差。
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