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46 条记录 (耗时 0.033 秒)

    Preventing damage to low-k materials during resist stripping
    1.
    发明授权
    Preventing damage to low-k materials during resist stripping 有权
    防止抗蚀剂剥离时对低k材料的损伤

    公开(公告)号：US07226852B1

    公开(公告)日：2007-06-05

    申请号：US10866382

    申请日：2004-06-10

    申请人： Siyi Li ,  Helen H. Zhu ,  Howard Dang ,  Thomas S. Choi ,  Peter Loewenhardt

    发明人： Siyi Li ,  Helen H. Zhu ,  Howard Dang ,  Thomas S. Choi ,  Peter Loewenhardt

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/31138

    摘要： A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO conditioning is preformed on the at least one feature after the at least one feature is etched. The patterned photoresist mask is stripped after the CO conditioning.

    摘要翻译： 提供了在低k电介质层中形成特征的方法。 将低k电介质层放置在衬底上。 将图案化的光致抗蚀剂掩模放置在低k电介质层上。 至少一个特征被蚀刻到低k电介质层中。 在蚀刻至少一个特征之后，在至少一个特征上进行CO调节。 在CO调节之后剥离图案化的光刻胶掩模。

    Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition
    4.
    发明授权
    Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition 有权
    使用气体化学和碳氢化合物加成的周期调制的等离子体剥离方法

    公开(公告)号：US07294580B2

    公开(公告)日：2007-11-13

    申请号：US10860833

    申请日：2004-06-03

    申请人： Seokmin Yun ,  Ji Zhu ,  Peter Cirigliano ,  Sangheon Lee ,  Thomas S. Choi ,  Peter Loewenhardt ,  Mark H. Wilcoxson ,  Reza Sadjadi ,  Eric A. Hudson ,  James V. Tietz

    发明人： Seokmin Yun ,  Ji Zhu ,  Peter Cirigliano ,  Sangheon Lee ,  Thomas S. Choi ,  Peter Loewenhardt ,  Mark H. Wilcoxson ,  Reza Sadjadi ,  Eric A. Hudson ,  James V. Tietz

    IPC分类号： H01L21/00

    CPC分类号： H01L21/31116 ,  H01L21/31138 ,  H01L21/76802 ,  H01L21/76829

    摘要： A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.

    摘要翻译： 一种通过光刻胶蚀刻掩模在衬底上蚀刻低k电介质层中的特征的方法。 执行气体调制的循环剥离工艺超过三个循环以剥离单个光致抗蚀剂掩模。 气体调节循环汽提过程的每个循环包括进行保护层形成阶段和汽提阶段。 使用具有沉积气化学性质的第一气体化学物质的保护层形成阶段，其中保护层形成阶段在每个循环中以约0.005至10秒钟进行。 使用第二种气体化学法，使用剥离气体化学法，其中第一种气体化学物质与第二种气体化学物质不同，进行汽提阶段以剥离光致抗蚀剂掩模，其中每个循环在约0.005至10秒内进行蚀刻阶段。

    Methods of sputtering a protective coating on a semiconductor substrate
    5.
    发明授权
    Methods of sputtering a protective coating on a semiconductor substrate 有权
    在半导体衬底上溅射保护涂层的方法

    公开(公告)号：US07601246B2

    公开(公告)日：2009-10-13

    申请号：US10952088

    申请日：2004-09-29

    申请人： Jisoo Kim ,  Jong Shon ,  Biming Yen ,  Peter Loewenhardt

    发明人： Jisoo Kim ,  Jong Shon ,  Biming Yen ,  Peter Loewenhardt

    IPC分类号： C23C14/34

    CPC分类号： C23C14/3457 ,  C23C14/185 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76814 ,  H01L2221/1063

    摘要： Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture.

    摘要翻译： 将含硅或金属材料的保护涂层沉积到半导体衬底上的方法包括将这种材料从电极溅射到等离子体处理室中的半导体衬底上。 保护材料可以沉积在覆盖低k材料和/或低k材料的多层掩模上。 该方法可用于双镶嵌工艺中以保护掩模并增强蚀刻选择性，以在抗蚀剂剥离过程中保护低k材料免受碳的损耗，和/或保护低k材料免受水分吸收。

    Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
    8.
    发明申请
    Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift 有权
    用于降低等离子体反应器腐蚀速率漂移的温度控制热边缘环组件

    公开(公告)号：US20050133164A1

    公开(公告)日：2005-06-23

    申请号：US10736666

    申请日：2003-12-17

    申请人： Andreas Fischer ,  Peter Loewenhardt

    发明人： Andreas Fischer ,  Peter Loewenhardt

    IPC分类号： H01J37/32 ,  H01L21/00 ,  H01L21/687 ,  C23F1/00

    CPC分类号： H01L21/68735 ,  H01J37/32642 ,  H01L21/67069

    摘要： A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be attached via the lower ring to an RF electrode. The upper ring overlies the intermediate ring, and has an upper surface exposed to an interior of a plasma reaction chamber.

    摘要翻译： 适于围绕等离子体反应室中的衬底支撑件的温度控制的热边缘环组件。 组件包括导电下环，陶瓷中间环和上环。 中间环覆盖在下环上并且适于经由下环连接到RF电极。 上环覆盖中间环，并且具有暴露于等离子体反应室内部的上表面。

    Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma
    10.
    发明授权
    Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma 失效
    磁阻等离子体磁感应耦合等离子体反应器

    公开(公告)号：US06471822B1

    公开(公告)日：2002-10-29

    申请号：US09263001

    申请日：1999-03-05

    申请人： Gerald Yin ,  Peter Loewenhardt ,  Arnold Kholodenko ,  Hong Chin Shan ,  Chii Lee ,  Dan Katz

    发明人： Gerald Yin ,  Peter Loewenhardt ,  Arnold Kholodenko ,  Hong Chin Shan ,  Chii Lee ,  Dan Katz

    IPC分类号： H05H100

    CPC分类号： H01J37/321 ,  H01J37/32669

    摘要： The present invention provides a plasma reactor having a plasma source chamber capable of generating a high density plasma typically utilizing a helicon wave. The plasma is delivered to a process chamber having a workpiece. The present invention may provide a plurality of magnets, each being located longitudinally around an axis perpendicular to the plane of the workpiece to form a magnetic bucket that extends the length of the side wall of the processing chamber and across a workpiece insertion opening and a vacuum pump opening. The magnetic bucket of the present invention may be formed so that the pedestal need not be raised to be within the bucket, or may be formed by permanent magnets oriented with one pole of each magnet facing the interior of the processing chamber, or with opposite poles of adjacent magnets facing each other, thereby forming cusps around the axis perpendicular to the plane of the workpiece. Current carrying conductors may generate all or part of the magnetic bucket. The present invention may provide an inner wall member secured within the processing chamber. All or a portion of the inner wall may be grounded to provide a well defined anode for bias power that is applied to the workpiece pedestal, and may be heated so that deposits do not cause its impedance to drift.

    摘要翻译： 本发明提供一种等离子体反应器，其具有能够产生通常利用螺旋波的高密度等离子体源室。 将等离子体输送到具有工件的处理室。 本发明可以提供多个磁体，每个磁体纵向地围绕垂直于工件的平面的轴定位，以形成一个磁性铲斗，其延伸处理室的侧壁的长度并穿过工件插入口和真空 泵开口。 本发明的磁性铲斗可以形成为使得底座不需要升高到铲斗内部，或者可以由定向为每个磁体的一极的方向定向的永久磁铁形成，面对处理室的内部，或者具有相对的极 相邻的磁体彼此面对，从而围绕垂直于工件的平面的轴线形成尖端。 载流导体可以产生磁桶的全部或部分。 本发明可以提供固定在处理室内的内壁件。 内壁的全部或一部分可以被接地以提供良好限定的用于施加到工件基座的偏置功率的阳极，并且可以被加热，使得沉积物不会使其阻抗漂移。