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    Doherty power amplifier for radio-frequency applications
    1.
    发明授权
    Doherty power amplifier for radio-frequency applications 有权

    公开(公告)号：US10483918B2

    公开(公告)日：2019-11-19

    申请号：US15716493

    申请日：2017-09-26

    Applicant: SKYWORKS SOLUTIONS, INC.

    Inventor： Boshi Jin ,  Jing-Hwa Chen ,  Paul T. DiCarlo ,  Steven Christopher Sprinkle ,  Florinel G. Balteanu ,  David Scott Whitefield

    IPC: H03F3/68 ,  H03F1/02 ,  H03F3/193 ,  H03F3/21 ,  H03F3/24 ,  H03F3/60 ,  H03F3/72

    Abstract: A power amplifier can include a carrier amplifier having first and second differential amplification cells with outputs coupled by a primary loop of a carrier transformer, and a peaking amplifier having first and second differential amplification cells with outputs coupled by a primary loop of a peaking transformer. The power amplifier can further include a combiner having a quarter-wave circuit implemented between the secondary loop of the carrier transformer and a secondary loop of the peaking transformer. The quarter-wave circuit can be configured to provide a characteristic impedance, such that the carrier and peaking amplifiers are presented with an impedance that is approximately the same as the characteristic impedance when both of the carrier and peaking amplifiers are turned on, and the carrier amplifier is presented with an impedance that is approximately twice the characteristic impedance when the carrier amplifier is turned on and the peaking amplifier is turned off.

    BODY-GATE COUPLING TO IMPROVE LINEARITY OF RADIO-FREQUENCY SWITCH
    5.
    发明申请
    BODY-GATE COUPLING TO IMPROVE LINEARITY OF RADIO-FREQUENCY SWITCH 审中-公开
    身体联接以提高无线电频率开关的线性

    公开(公告)号：US20140009212A1

    公开(公告)日：2014-01-09

    申请号：US13936178

    申请日：2013-07-06

    Applicant: SKYWORKS SOLUTIONS, INC.

    Inventor： Fikret Altunkilic ,  Anuj Madan ,  Steven Christopher Sprinkle ,  Guillaume Alexandre Blin

    IPC: H03K17/081 ,  H01L21/8234

    CPC classification number: H03K17/08104 ,  H01L21/823475 ,  H01L27/0629 ,  H01L27/1203 ,  H03K17/693 ,  H03K2217/0018

    Abstract: Radio-frequency (RF) switch circuits are disclosed having one or more transistors coupled to provide improved switching performance. RF switches include at least one field-effect transistor (FET) disposed between first and second nodes, each the at least one FET having a respective body and a corresponding gate. A coupling circuit couples the respective body and corresponding gate of the at least one FET. The coupling circuit may include a diode in series with a resistor and may be configured to facilitate removal of excess charge from the respective body.

    Abstract translation: 公开了具有耦合以提供改进的开关性能的一个或多个晶体管的射频（RF）开关电路。 RF开关包括设置在第一和第二节点之间的至少一个场效应晶体管（FET），每个至少一个FET具有相应的主体和相应的栅极。 耦合电路耦合至少一个FET的相应主体和对应的栅极。 耦合电路可以包括与电阻器串联的二极管，并且可以被配置为便于从相应的主体去除过量的电荷。

    Radio-frequency switches having gate bias and frequency-tuned body bias
    8.
    发明授权
    Radio-frequency switches having gate bias and frequency-tuned body bias 有权
    射频开关具有栅极偏置和频率调节的体偏置

    公开(公告)号：US09595951B2

    公开(公告)日：2017-03-14

    申请号：US14474050

    申请日：2014-08-29

    Applicant: SKYWORKS SOLUTIONS, INC.

    Inventor： Steven Christopher Sprinkle ,  Fikret Altunkilic ,  Haki Cebi

    IPC: H03K3/01 ,  H03K17/16 ,  H01L21/8234 ,  H01L27/12 ,  H03K17/693

    CPC classification number: H03K17/161 ,  H01L21/8234 ,  H01L27/1203 ,  H03K17/693 ,  H03K2217/0018

    Abstract: Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes a plurality of field-effect transistors (FETs) connected in series between first and second nodes, each FET having a gate and a body. A compensation network including a gate-coupling circuit couples the gates of each pair of neighboring FETs. The compensation network may further including a body-coupling circuit that couples the bodies of each pair of neighboring FETs.

    Abstract translation: 披露了提供改进的开关性能的射频（RF）开关电路。 RF开关系统包括在第一和第二节点之间串联连接的多个场效应晶体管（FET），每个FET具有栅极和主体。 包括栅极耦合电路的补偿网络耦合每对相邻FET的栅极。 补偿网络还可以包括耦合每对相邻FET的主体的主体耦合电路。

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