公开(公告)号：US20160359080A1

公开(公告)日：2016-12-08

申请号：US14985263

申请日：2015-12-30

Applicant: SolarCity Corporation

Inventor： Yongkee Chae ,  Jianming Fu

IPC: H01L31/18 ,  C23C16/455

CPC classification number: H01L31/1868 ,  C23C16/455 ,  H01L21/67161 ,  H01L21/67173 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/028 ,  H01L31/03529 ,  H01L31/03762 ,  H01L31/074 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

Abstract: One embodiment of the present invention can provide a system for fabricating a photovoltaic structure. The system can include a combined chemical vapor deposition tool that can include a static deposition module and an inline deposition module. The static deposition module can be configured to deposit a first passivation layer on a first side of a crystalline Si base layer of the photovoltaic structure. The inline deposition module is configured to deposit a second passivation layer on the first passivation layer, and the inline deposition module is coupled to the static deposition module in a way that the photovoltaic structure can be transferred from the static deposition module to the inline deposition module without leaving a common vacuum space.

Abstract translation: 本发明的一个实施例可以提供一种用于制造光伏结构的系统。 该系统可以包括组合的化学气相沉积工具，其可以包括静电沉积模块和在线沉积模块。 静电沉积模块可以配置成在光伏结构的晶体Si基底层的第一侧上沉积第一钝化层。 在线沉积模块被配置为在第一钝化层上沉积第二钝化层，并且在线沉积模块以静电沉积模块转移到在线沉积模块的方式耦合到静电沉积模块 而不会留下共同的真空空间。

公开(公告)号：US10309012B2

公开(公告)日：2019-06-04

申请号：US14712741

申请日：2015-05-14

Applicant: SolarCity Corporation

Inventor： Yongkee Chae ,  Jiunn Benjamin Heng ,  Jianming Fu ,  Zheng Xu

IPC: C23C16/458 ,  C23C16/44 ,  H01L21/687

Abstract: A wafer carrier for carrying solar cell wafers during a deposition process is described. The carrier is coated with pyrolytic carbon, silicon carbide, or a ceramic material, and is adapted to receive and support the wafers.

公开(公告)号：US20160002774A1

公开(公告)日：2016-01-07

申请号：US14712741

申请日：2015-05-14

Applicant: SolarCity Corporation

Inventor： Yongkee Chae ,  Jiunn Benjamin Heng ,  Jianming Fu ,  Zheng Xu

IPC: C23C16/44 ,  C23C16/458 ,  H01L21/687 ,  B25J15/00 ,  B25J11/00

CPC classification number: C23C16/4404 ,  C23C16/4581 ,  C23C16/4585 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68757 ,  H01L21/68771

Abstract: A wafer carrier for carrying solar cell wafers during a deposition process is described. The carrier is coated with pyrolytic carbon, silicon carbide, or a ceramic material, and is adapted to receive and support the wafers.

Abstract translation: 描述了在沉积工艺期间承载太阳能电池晶片的晶片载体。 载体涂覆有热解碳，碳化硅或陶瓷材料，并且适于接收和支撑晶片。

公开(公告)号：US09972740B2

公开(公告)日：2018-05-15

申请号：US14985143

申请日：2015-12-30

Applicant: SolarCity Corporation

Inventor： Yongkee Chae ,  Jianming Fu

IPC: H01L21/00 ,  H01L31/18 ,  C23C16/455 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/0376 ,  H01L31/074 ,  H01L31/20 ,  H01L21/67

CPC classification number: H01L31/1868 ,  C23C16/455 ,  H01L21/67161 ,  H01L21/67173 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/028 ,  H01L31/03529 ,  H01L31/03762 ,  H01L31/074 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

Abstract: One embodiment of the present invention can provide a system for fabricating a photovoltaic structure. During fabrication, the system can deposit a first passivation layer on a first side of a Si base layer of the photovoltaic structure using a static chemical vapor deposition process. The static chemical vapor deposition process can be performed inside a first reaction chamber. The system can then transfer the photovoltaic structure from the first reaction chamber to a second reaction chamber without the photovoltaic structure leaving a common vacuum space comprising both reaction chambers, and deposit a second passivation layer on the first passivation layer using an inline chemical vapor deposition process. The inline chemical vapor deposition process can be performed inside the second reaction chamber.

公开(公告)号：US20160359071A1

公开(公告)日：2016-12-08

申请号：US14985143

申请日：2015-12-30

Applicant: SolarCity Corporation

Inventor： Yongkee Chae ,  Jianming Fu

IPC: H01L31/074 ,  H01L31/20 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/1868 ,  C23C16/455 ,  H01L21/67161 ,  H01L21/67173 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/028 ,  H01L31/03529 ,  H01L31/03762 ,  H01L31/074 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

Abstract: One embodiment of the present invention can provide a system for fabricating a photovoltaic structure. During fabrication, the system can deposit a first passivation layer on a first side of a Si base layer of the photovoltaic structure using a static chemical vapor deposition process. The static chemical vapor deposition process can be performed inside a first reaction chamber. The system can then transfer the photovoltaic structure from the first reaction chamber to a second reaction chamber without the photovoltaic structure leaving a common vacuum space comprising both reaction chambers, and deposit a second passivation layer on the first passivation layer using an inline chemical vapor deposition process. The inline chemical vapor deposition process can be performed inside the second reaction chamber.

Abstract translation: 本发明的一个实施例可以提供一种用于制造光伏结构的系统。 在制造期间，系统可以使用静态化学气相沉积工艺在光伏结构的Si基底层的第一侧上沉积第一钝化层。 静态化学气相沉积工艺可以在第一反应室内进行。 然后，系统可以将光伏结构从第一反应室转移到第二反应室，而没有光伏结构留下包含两个反应室的公共真空空间，并且使用在线化学气相沉积工艺在第一钝化层上沉积第二钝化层 。 可以在第二反应室内进行在线化学气相沉积工艺。