摘要:
A boundary scan test circuit (JTAG) interface is used to provide data for a set of configuration latches within a Configuration Register. The Configuration Register is included within the JTAG structure as a Test Data Register (TDR). Each configuration bit within the Configuration Register consists of a Configuration Latch, and each configuration latch has an output used as a configuration control signal within an output logic macrocell. The configuration register's input signal is selectably provided from either a set of serially connected configuration bit non-volatile element sense latches or from the JTAG Test Data In (TDI) data pin for reconfiguration, prototyping, and testing.
摘要:
A JTAG Boundary Scan method by which the on-chip system logic (OCSL) of an integrated circuit is changed by use of a state machine which, among other functions, allows a predefined set of instructions to be loaded into an Instruction Register and then executed. The predefined instructions are designed to follow in sequence after certain other previous instructions. The instructions change the OCSL from one state to another state and allows the state to be changed without the need of a full device reset. Additional instructions within this invention were created to have attendant operating modes for which termination is self timed within the integrated circuit. Additional instructions further control the implementation of instruction execution within the state machine.
摘要:
Boundary Scan integrated circuits are provided with a plurality of new registers between two dedicated pins, Test Data In (TDI) and Test Data Out (TDO) pins. The new registers include an address register and a plurality of test data registers which are addressable by the address register using address-dependent instructions in the instruction register (IR). Instructions for the addressable registers may be steered to the correct register with an ADDLOAD instruction placed in the instruction register followed by an address-dependent instruction. The ADDLOAD instruction makes the address register active between the TDI and TDO pins. Any instruction from a set of address-dependent instructions may be steered to any register handling address-dependent instructions allowing a small number of instructions to be used in a large number of addressable data registers. At the same time non-addressable registers, such as the Boundary Scan register, use address-independent instructions.
摘要:
Bulk operation logic circuitry for use in carrying out bulk program, erase, verify and margining operations on nonvolatile memory cells of a PLD, FPGA, flash-based microcontroller, EEPROM, flash memory device or other integrated circuit containing such cells includes a flag register for designating one or more selected blocks of cells to which the bulk operation will be limited. The bulk operation circuitry includes a controller, with a state machine and associated control logic, that distributes system clock signals and provides control signals to an instruction register, the flag register, an address register and one or more data registers to control loading of instructions and data into those registers through a serial input. The state machine is responsive to a mode signal for switching it from a normal user state into a bulk operation state. The use of a flag register allows simplification of the instruction set to register load instructions and basic bulk operation instructions (and a flow through operation using a serial output from the registers), while providing a wide variety of possible block selections for the different bulk operations.
摘要:
An integrated circuit package including a plurality of macrocells for connecting a logic circuit of the package to a plurality of external contacts of the package. At least one of the macrocells has an output driver that is enabled or disabled by a control signal for transmitting or preventing transmission of a logic signal to one of the contacts. The control signal is generated by a logic gate that receives and logically combines an individual output enable signal dedicated to that particular macrocell with a selected signal. One signal that may be selected is a regional output enable signal that is supplied to more than one macrocell. Each macrocell also has a feedback multiplexer selecting one signal to be sent to the logic circuit. Choices include a nonstored logic signal, a stored logic signal from a flip-flop register in the macrocell, a signal applied to the external contact associated with that macrocell, and a signal applied to another external contact associated with a different macrocell. A plurality of contacts are connected to feedback multiplexers in two different macrocells, and at least one contact connects in this manner to separate logic regions of the logic circuit. The flip-flop register in the macrocell has a choice of data inputs selected by another multiplexer from among at least one logic signal from the logic circuit and at least one signal applied to an external contact.
摘要:
A memory system that incorporates methods of amplifying the lifetime of a counter made up of memory elements, such as EEPROM cells, having finite endurance. A relatively small memory made up of a number of individually accessible write segments, where, depending on the embodiment, each write segment is made up of a single memory cell or a small number of cells (e.g., a byte). A count is encoded so that it is distributed across a number of fields, each associated with one of the write segments, such that as the count is incremented only a single field (or, in the single bit embodiments, occasionally more than one field) is changed and that these changes are evenly distributed across the fields. The changed field is then written to the corresponding segment, while the other write segments are unchanged. Consequently, the number of rewrites to a given write segment is decreased, and the lifetime correspondingly increased, by a factor corresponding to the number of write segments used.
摘要:
A “smart verify” technique, whereby multi-state memories are programmed using a verify-results-based dynamic adjustment of the multi-states verify range for sequential-state-based verify implementations, is presented. This technique can increase multi-state write speed while maintaining reliable operation within sequentially verified, multi-state memory implementations by providing “intelligent” element to minimize the number of sequential verify operations for each program/verify/lockout step of the write sequence. At the beginning of a program/verify cycle sequence only the lowest state or states are checked during the verify phase. As lower states are reached, additional higher states are added to the verify sequence and lower states can be removed.
摘要:
The present invention presents methods for reducing the amount of noise inherent in the reading of a non-volatile storage device by applying an episodic agitation (e.g. a time varying voltage) to some terminal(s) of the cell as part of the reading process. Various aspects of the present invention also extend to devices beyond non-volatile memories. According to one aspect of the present invention, in addition to the normal voltage levels applied to the cell as part of the reading process, a time varying voltage is applied to the cell. A set of exemplary embodiments apply a single or multiple set of alternating voltages to one or more terminals of a floating gate memory cell just prior to or during the signal integration time of a read process. In other embodiments, other reproducible external or internal agitations which are repeatable, and whose average effect (from one integration time to the next integration time) remains sufficiently constant so as to have a net noise reduction effect is applicable.
摘要:
A memory system (e.g., memory card) having error management for stored levels (e.g., reference levels) used in discrimination of logic levels for data storage units providing data storage is disclosed. The stored levels can be stored in predetermined storage units (e.g., writable tracking storage units) in the memory system. The memory system is typically a non-volatile memory product or device that provides binary or multi-state data storage.
摘要:
Tracking cells are used in a memory system to improve the read process. The tracking cells can provide an indication of the quality of the data and can be used as part of a data recovery operation if there is an error. The tracking cells provide a means to adjust the read parameters to optimum levels in order to reflect the current conditions of the memory system. Additionally, some memory systems that use multi-state memory cells will apply rotation data schemes to minimize wear. The rotation scheme can be encoded in the tracking cells based on the states of multiple tracking cells, which is decoded upon reading.