公开(公告)号：US07859648B2

公开(公告)日：2010-12-28

申请号：US12624263

申请日：2009-11-23

申请人： Siegfried Schwarzl ,  Stefan Wurm

发明人： Siegfried Schwarzl ,  Stefan Wurm

IPC分类号： G02B1/10 ,  G02B5/08

CPC分类号： G03F7/70958 ,  B82Y10/00 ,  G03F7/70316 ,  G03F7/70916 ,  G21K1/062 ,  Y10T428/12667

摘要： A reflector structure suitable for extreme ultraviolet lithography (EUVL) is provided. The structure comprises a substrate having a multi-layer reflector. A capping layer is formed over the multi-layer reflector to prevent oxidation. In an embodiment, the capping layer is formed of an inert oxide, such as Al2O3, HfO2, ZrO2, Ta2O5, Y2O3-stabilized ZrO2, or the like. The capping layer may be formed by reactive sputtering in an oxygen environment, by non-reactive sputtering wherein the materials are sputtered directly from the respective oxide targets, by non-reactive sputtering of the metallic layer followed by full or partial oxidation (e.g., by natural oxidation, by oxidation in oxygen-containing plasmas, by oxidation in ozone (O3), or the like), by atomic level deposition (e.g., ALCVD), or the like.

摘要翻译： 提供了适用于极紫外光刻（EUVL）的反射器结构。 该结构包括具有多层反射器的基板。 在多层反射器上形成覆盖层以防止氧化。 在一个实施方案中，封盖层由惰性氧化物如Al 2 O 3，HfO 2，ZrO 2，Ta 2 O 5，Y 2 O 3稳定的ZrO 2等形成。 覆盖层可以通过在氧环境中的反应溅射，通过非反应性溅射形成，其中材料直接从相应的氧化物靶溅射，通过金属层的非反应性溅射，然后进行全部或部分氧化（例如，通过 通过在含氧等离子体中氧化，通过氧化在臭氧（O3）等中），通过原子级沉积（例如，ALCVD）等进行自然氧化。

公开(公告)号：US20070242257A1

公开(公告)日：2007-10-18

申请号：US11403483

申请日：2006-04-13

申请人： Stefan Wurm ,  Siegfried Schwarzl

发明人： Stefan Wurm ,  Siegfried Schwarzl

IPC分类号： G03B27/62

CPC分类号： G03B27/62 ,  G03F7/707

摘要： Reticle stages for lithography systems and lithography methods are disclosed. In a preferred embodiment, a lithography reticle stage includes a first region adapted to support a first reticle, and at least one second region adapted to support a second reticle.

摘要翻译： 公开了用于光刻系统和光刻方法的掩模版阶段。 在优选实施例中，光刻掩模版台包括适于支撑第一掩模版的第一区域和适于支撑第二掩模版的至少一个第二区域。

公开(公告)号：US20060275928A1

公开(公告)日：2006-12-07

申请号：US10512615

申请日：2003-03-27

申请人： Stefan Wurm ,  Siegfried Schwarzl

发明人： Stefan Wurm ,  Siegfried Schwarzl

IPC分类号： H01L21/00 ,  H01L29/94

CPC分类号： G11C11/16

摘要： A magnetoresistive semiconductor memory device is proposed, in which a magnetic field can be applied to memory cells by means of a magnetic field applying device such that a desired magnetization can be impressed on hard-magnetic layers of the memory cells acted on.

摘要翻译： 提出了一种磁阻半导体存储器件，其中可以通过磁场施加装置将磁场施加到存储器单元，使得期望的磁化可以施加在作用的存储器单元的硬磁性层上。

公开(公告)号：US06849365B2

公开(公告)日：2005-02-01

申请号：US10292866

申请日：2002-11-12

申请人： Siegfried Schwarzl ,  Stefan Wurm

发明人： Siegfried Schwarzl ,  Stefan Wurm

IPC分类号： G03F1/24 ,  G03F9/00

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00

摘要： A reflection mask has a multilayer reflection layer for the reflection of radiated-in radiation by constructive interference of the reflected partial beams and a multilayer layer, whose periodicity effects a destructive interference of the reflected partial beams and which performs the function of an absorber. One of the two multilayer layers is patterned in accordance with a structure to be imaged.

摘要翻译： 反射掩模具有多层反射层，用于通过反射的部分光束的结构性干涉反射辐射辐射，并且多层反射层的周期性影响反射的部分光束的破坏性干涉并且执行吸收体的功能。 根据要成像的结构对两个多层层中的一个进行图案化。

公开(公告)号：US07626682B2

公开(公告)日：2009-12-01

申请号：US11403483

申请日：2006-04-13

申请人： Stefan Wurm ,  Siegfried Schwarzl

发明人： Stefan Wurm ,  Siegfried Schwarzl

IPC分类号： G03B27/62 ,  G03B27/42

CPC分类号： G03B27/62 ,  G03F7/707

摘要： Reticle stages for lithography systems and lithography methods are disclosed. In a preferred embodiment, a lithography reticle stage includes a first region adapted to support a first reticle, and at least one second region adapted to support a second reticle.

摘要翻译： 公开了用于光刻系统和光刻方法的掩模版阶段。 在优选实施例中，光刻掩模版台包括适于支撑第一掩模版的第一区域和适于支撑第二掩模版的至少一个第二区域。

公开(公告)号：US20080204695A1

公开(公告)日：2008-08-28

申请号：US12110062

申请日：2008-04-25

申请人： Siegfried Schwarzl ,  Stefan Wurm

发明人： Siegfried Schwarzl ,  Stefan Wurm

IPC分类号： G03B27/62

CPC分类号： G03F7/70841 ,  G03F7/707 ,  G03F7/70708

摘要： A method for providing a vacuum isolated environment in a lithography system is disclosed. The method for dechucking a reticle includes providing a mask chamber having one or more vacuum valves for isolating the mask chamber from the lithography system. The one or more vacuum valves are closed to isolate the mask chamber from the rest of the lithography system. After the mask chamber is isolated, an inert gas is provided to the mask chamber to dechuck the reticle.

摘要翻译： 公开了一种在光刻系统中提供真空隔离环境的方法。 用于去除标线的方法包括提供具有一个或多个真空阀的掩模室，用于将掩模室与光刻系统隔离。 一个或多个真空阀关闭以将掩模室与光刻系统的其余部分隔离。 在隔离罩室之后，向掩模室提供惰性气体以将标线卡住。

公开(公告)号：US07407729B2

公开(公告)日：2008-08-05

申请号：US10912658

申请日：2004-08-05

申请人： Siegfried Schwarzl ,  Stefan Wurm

发明人： Siegfried Schwarzl ,  Stefan Wurm

IPC分类号： G03F1/00

CPC分类号： G03F1/84 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24

摘要： An EUV Lithography mask, a fabrication method, and use method thereof is provided. A preferred embodiment comprises a substrate, a Bragg reflector disposed upon the substrate, a buffer disposed upon the Bragg reflector, and an absorber layer disposed upon the buffer. The materials in the mask have selected magnetic properties. In a preferred embodiment, the buffer is a hard magnetic material, and the absorber is a soft magnetic material. Another preferred embodiment includes a mask manufacturing method further including a mask step. In a preferred embodiment, an electron mirror microscope is used to inspect the mask by imaging its topography with respect to its magnetic properties in an applied magnetic field.

摘要翻译： 提供了一种EUV平版印刷掩模，其制造方法及其使用方法。 优选实施例包括衬底，布置在衬底上的布拉格反射器，设置在布拉格反射器上的缓冲器和设置在缓冲器上的吸收层。 掩模中的材料已经选择了磁性。 在优选实施例中，缓冲器是硬磁性材料，吸收体是软磁性材料。 另一个优选实施例包括还包括掩模步骤的掩模制造方法。 在优选实施例中，电子镜显微镜用于通过在施加的磁场中相对于其磁特性对其形貌进行成像来检查掩模。

公开(公告)号：US20080037000A1

公开(公告)日：2008-02-14

申请号：US10599428

申请日：2005-03-31

申请人： Siegfried Schwarzl ,  Stefan Wurm

发明人： Siegfried Schwarzl ,  Stefan Wurm

IPC分类号： G01J3/00 ,  G01J5/46 ,  G01N21/55

CPC分类号： G03F7/70558 ,  G03F7/7085

摘要： Method for determining a mean radiation power P rad 0 _ of electromagnetic radiation of a radiation source, the radiation being intensity-modulated with modulation frequency ω0, in a predetermined time interval. The method provides a reflector designed to reflect electromagnetic radiation of the radiation source and electromagnetic radiation of a test radiation source, irradiates a predetermined area of the reflector with the source electromagnetic radiation, at least partially irradiates the predetermined area of the reflector with electromagnetic radiation of the test radiation source, measures a ω0-modulated power component Ptest,ω0(t) of a reflected test radiation power Ptest(t) of an electromagnetic radiation of the test radiation source, the radiation being reflected from the area, in the predetermined time interval, determines a mean value P test , ω 0 0 _ of the measured ω0-modulated power component Ptest,ω0(t) of the reflected test radiation power Ptest(t) in the predetermined time interval, and determines the mean radiation power P rad 0 _ from the relationship P rad 0 _ = a · P test , ω 0 0 _ , where a is a predetermined constant.

公开(公告)号：US07029808B2

公开(公告)日：2006-04-18

申请号：US10673964

申请日：2003-09-29

申请人： Jenspeter Rau ,  Siegfried Schwarzl ,  Stefan Wurm

发明人： Jenspeter Rau ,  Siegfried Schwarzl ,  Stefan Wurm

IPC分类号： G03C5/02 ,  G03F7/20 ,  G03F7/039

CPC分类号： G03F7/105 ,  Y10S430/115 ,  Y10S430/134

摘要： A radiation-sensitive coating material, in addition to a base polymer, has a solvent and a radiation-active substance which forms an acid on irradiation by light (including energetic electrons or ions), a fluorescent substance which alters its fluorescence property subject to a change in the acid content of its surroundings. In a process for exposing a substrate coated with the coating material at least one sensor in the exposure chamber of the exposure apparatus measures the intensity of the change in fluorescence spectrum as a function of time during the exposure operation. From the course of intensity at the time of an individual line of the fluorescence spectrum or the intensity integrated over a wavelength interval it is possible to determine the endpoint of the exposure operation by way of electronic algorithms. Deviations from experimentally determined ideal curves of the intensity course provide information on erroneous functions in the course of coating material application and exposure.

摘要翻译： 除了基础聚合物之外，辐射敏感性涂层材料具有溶剂和辐射活性物质，其在光照射下（包括能量电子或离子）形成酸，荧光物质改变其荧光性质 改变其周围的酸含量。 在用涂布材料曝光的基材的曝光过程中，曝光装置的曝光室中的至少一个传感器在曝光操作期间测量作为时间的函数的荧光光谱的变化强度。 从荧光光谱的单独行的强度或在波长间隔上积分的强度的过程中，可以通过电子算法确定曝光操作的终点。 与实验确定的强度曲线的偏差提供了涂料应用和曝光过程中错误功能的信息。

公开(公告)号：US20100119981A1

公开(公告)日：2010-05-13

申请号：US12692243

申请日：2010-01-22

申请人： Siegfried Schwarzl ,  Stefan Wurm

发明人： Siegfried Schwarzl ,  Stefan Wurm

IPC分类号： G03F7/20

CPC分类号： G03F7/70958 ,  B82Y10/00 ,  G03F7/70316 ,  G03F7/70916 ,  G21K1/062 ,  Y10T428/12667

摘要： A reflector structure suitable for extreme ultraviolet lithography (EUVL) is provided. The structure comprises a substrate having a multi-layer reflector. A capping layer is formed over the multi-layer reflector to prevent oxidation. In an embodiment, the capping layer is formed of an inert oxide, such as Al2O3, HfO2, ZrO2, Ta2O5, Y2O3-stabilized ZrO2, or the like. The capping layer may be formed by reactive sputtering in an oxygen environment, by non-reactive sputtering wherein the materials are sputtered directly from the respective oxide targets, by non-reactive sputtering of the metallic layer followed by full or partial oxidation (e.g., by natural oxidation, by oxidation in oxygen-containing plasmas, by oxidation in ozone (O3), or the like), by atomic level deposition (e.g., ALCVD), or the like.