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    Intrinsic absorber layer for photovoltaic cells
    8.
    发明授权
    Intrinsic absorber layer for photovoltaic cells 失效
    光伏电池的固有吸收层

    公开(公告)号：US08709857B2

    公开(公告)日：2014-04-29

    申请号：US13395941

    申请日：2010-11-11

    申请人： Sylvie-Noelle Bakehe-Ananga ,  Stefano Benagli

    发明人： Sylvie-Noelle Bakehe-Ananga ,  Stefano Benagli

    IPC分类号： H01L31/20

    CPC分类号： H01L31/202 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/03921 ,  H01L31/075 ,  Y02E10/548 ,  Y02P70/521

    摘要： So as to manufacture an intrinsic absorber layer of amorphous hydrogenated silicon within a p-i-n configuration a solar cell by PeCvD deposition upon a base structure, thereby improving throughput an simultaneously maintaining quality of the absorber layer, a specific processing regime is proposed, wherein in the reactor for depositing the addressed absorber layer a pressure of between 1 mbar and 1.8 mbar is established and a flow of silane and of hydrogen with a dilution of silane to hydrogen of 1:4 up to 1:10 and generating an RF plasma with a generator power of between 600 W and 1200 W per 1.4 m2 base structure surface to be coated.

    摘要翻译： 为了通过PeCvD沉积在基底结构上在引脚构造中制造太阳能电池的非晶态氢化硅的固有吸收层，从而提高了同时保持吸收层质量的通量，提出了一种具体的处理方式，其中在反应器 为了沉积寻址的吸收层，建立了1mbar和1.8mbar之间的压力，并且硅烷和氢气与硅烷稀释至氢的流量为1:4至1:10，并产生具有发电机功率的RF等离子体 介于600W与1200W / 1.4m2基础结构表面之间。

    NEW INTRINSIC ABSORBER LAYER FOR PHOTOVOLTAIC CELLS
    9.
    发明申请
    NEW INTRINSIC ABSORBER LAYER FOR PHOTOVOLTAIC CELLS 失效
    用于光伏电池的新颖内吸收层

    公开(公告)号：US20120270362A1

    公开(公告)日：2012-10-25

    申请号：US13395941

    申请日：2010-11-11

    申请人： Sylvie-Noelle Bakehe-Ananga ,  Stefano Benagli

    发明人： Sylvie-Noelle Bakehe-Ananga ,  Stefano Benagli

    IPC分类号： H01L31/20

    CPC分类号： H01L31/202 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/03921 ,  H01L31/075 ,  Y02E10/548 ,  Y02P70/521

    摘要： So as to manufacture an intrinsic absorber layer of amorphous hydrogenated silicon within a p-i-n configuration a solar cell by PeCvD deposition upon a base structure, thereby improving throughput an simultaneously maintaining quality of the absorber layer, a specific processing regime is proposed, wherein in the reactor for depositing the addressed absorber layer a pressure of between 1 mbar and 1.8 mbar is established and a flow of silane and of hydrogen with a dilution of silane to hydrogen of 1:4 up to 1:10 and generating an RF plasma with a generator power of between 600W and 1200W per 1.4 m2 base structure surface to be coated.

    摘要翻译： 为了通过PeCvD沉积在基底结构上在引脚构造中制造太阳能电池的非晶态氢化硅的固有吸收层，从而提高了同时保持吸收层质量的通量，提出了一种具体的处理方式，其中在反应器 为了沉积寻址的吸收层，建立了1mbar和1.8mbar之间的压力，并且硅烷和氢气与硅烷稀释至氢的流量为1:4至1:10，并产生具有发电机功率的RF等离子体 每平方米面积600W至1200W的基础结构表面。

    PHOTOVOLTAIC CELL AND METHOD OF MANUFACTURING A PHOTOVOLTAIC CELL
    10.
    发明申请
    PHOTOVOLTAIC CELL AND METHOD OF MANUFACTURING A PHOTOVOLTAIC CELL 审中-公开
    光伏电池和制造光伏电池的方法

    公开(公告)号：US20110180124A1

    公开(公告)日：2011-07-28

    申请号：US13059265

    申请日：2009-07-08

    申请人： Hanno Goldbach ,  Tobias Roschek ,  Stefano Benagli ,  Bogdan Mereu

    发明人： Hanno Goldbach ,  Tobias Roschek ,  Stefano Benagli ,  Bogdan Mereu

    IPC分类号： H01L31/042 ,  H01L31/075 ,  H01L31/0224 ,  H01L31/20 ,  H01L31/0288 ,  B82Y99/00

    CPC分类号： H01L31/022466 ,  H01L31/1884 ,  Y02E10/50

    摘要： A photovoltaic cell comprises an electrode layer (1b) of a transparent, electrically conductive oxide which is deposited upon a transparent carrier substrate (7b). There follows a contact layer (11b) which is of first type doped amorphous silicon and has a thickness of at most 10 nm. There follows a layer (26) of first type doped amorphous silicon compound which has a bandgap which is larger than the bandgap of the material of the addressed contact layer (11b). Subsequently to the first type doped amorphous silicon compound layer (2b) there follows a layer of intrinsic type silicon compound (3b) and a layer of second type doped silicon compound (5b).

    摘要翻译： 光伏电池包括沉积在透明载体衬底（7b）上的透明导电氧化物的电极层（1b）。 存在第一种掺杂非晶硅的接触层（11b），其厚度至多为10nm。 随后是第一类掺杂非晶硅化合物的层（26），其具有比所寻址的接触层（11b）的材料的带隙大的带隙。 随后，在第一掺杂非晶硅化合物层（2b）之后，存在本征型硅化合物（3b）和第二类掺杂硅化合物（5b）的层。