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1.发明授权Integrated semiconductor memory and method for operating a semiconductor memory 失效用于操作半导体存储器的集成半导体存储器和方法公开(公告)号：US07443713B2
公开(公告)日：2008-10-28
申请号：US11331365
申请日：2006-01-13
IPC分类号： G11C11/02
CPC分类号： G11C11/404 , H01L27/10885
摘要： An integrated semiconductor memory device includes at least one memory cell, at least one sense amplifier and a pair of bit lines connected to each sense amplifier, where each memory cell includes a selection transistor and a storage capacitor. The storage capacitor of each memory cell includes a first capacitor electrode and a second capacitor electrode, and the selection transistor of each memory cell includes a first source/drain region that is connected by a first contact connection to one bit line of a pair of bit lines corresponding with the memory cell, and a second source/drain region that is conductively connected to the first capacitor electrode of the storage capacitor of the memory cell. The second capacitor electrode of the storage capacitor of each memory cell is connected to the other bit line of the pair of bit lines corresponding with the memory cell.
摘要翻译： 集成半导体存储器件包括至少一个存储器单元，至少一个读出放大器和连接到每个读出放大器的一对位线，其中每个存储器单元包括选择晶体管和存储电容器。 每个存储单元的存储电容器包括第一电容器电极和第二电容器电极，并且每个存储单元的选择晶体管包括通过第一接触连接连接到一对位的一个位线的第一源极/漏极区域 与存储单元相对应的线，以及与存储单元的存储电容器的第一电容电极导电连接的第二源/漏区。 每个存储单元的存储电容器的第二电容器电极连接到与存储单元相对应的一对位线的另一位线。
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2.发明授权Integrated semiconductor memory and method for electrically stressing an integrated semiconductor memory 失效集成半导体存储器和用于电应力集成半导体存储器的方法公开(公告)号：US07482644B2
公开(公告)日：2009-01-27
申请号：US11061087
申请日：2005-02-18
IPC分类号： H01L29/73
CPC分类号： G11C29/025 , G11C29/02 , H01L27/105 , H01L27/10891
摘要： Semiconductor memories (1) have segmented word lines (5a, 5b), which in each case have a main word line (10a, 10b) made of a conductive metal and a plurality of interconnect segments (15a, 15b) coupled to the main word line (10a, 10b), which are coupled to the respective main word line (10a, 10b) in each case via at least one contact hole filling (11). If one of the contact hole fillings (11) is defective or at high resistance then functional errors of the semiconductor memory occur. The interconnect segments (15a, 15b) of two respective word lines (5a, 5b) can be short-circuited in pairs with the aid of switching units (20), whereby a static current (I) that flows via the contact hole fillings (11) can be used for electrically stressing the contact hole fillings (11). Electrical stressing of contact hole fillings of segmented word lines is thus made possible.
摘要翻译： 半导体存储器（1）具有分段字线（5a，5b），它们在每种情况下具有由导电金属制成的主字线（10a，10b）和耦合到主字的多个互连部分（15a，15b） 线路（10a，10b），其通过至少一个接触孔填充物（11）在每种情况下耦合到相应的主字线（10a，10b）。 如果接触孔填充物（11）中的一个有缺陷或高电阻，则会发生半导体存储器的功能错误。 两个相应字线（5a，5b）的互连部分（15a，15b）可以借助于开关单元（20）成对地短路，由此通过接触孔填充物流动的静电流（I） 11）可以用于电接触接触孔填充物（11）。 因此，分段字线的接触孔填充的电应力成为可能。
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3.发明申请Integrated semiconductor memory comprising at least one word line and comprising a multiplicity of memory cells 有权包括至少一个字线并且包括多个存储单元的集成半导体存储器公开(公告)号：US20050281118A1
公开(公告)日：2005-12-22
申请号：US11140554
申请日：2005-05-27
IPC分类号： G11C8/00 , G11C8/08 , G11C11/407 , G11C11/408 , G11C29/00 , G11C29/02 , H01L21/8242 , H01L27/108
CPC分类号： G11C11/4085 , G11C29/02 , G11C29/025 , G11C29/83 , G11C29/832 , G11C2029/1202 , H01L27/10891 , H01L27/10897
摘要： An integrated semiconductor memory includes at least one word line and a number of memory cells. Each memory cell has a selection transistor coupled to the word line. A word line driver is coupled to the word line. The word line driver provides a first electrical potential or a second electrical potential to the word line such that the word line is activated by the first electrical potential and is deactivated by the second electrical potential. A passive component (e.g., a diode or a resistor) is coupled between the word line and the second electrical potential such that the word line is coupled to the second electrical potential in a high-resistance fashion through the passive component. The passive component is transmissive for a leakage current between the word line and the contact connection.
摘要翻译： 集成半导体存储器包括至少一个字线和多个存储器单元。 每个存储单元具有耦合到字线的选择晶体管。 字线驱动器耦合到字线。 字线驱动器向字线提供第一电位或第二电势，使得字线由第一电位激活并且被第二电位禁用。 无源部件（例如，二极管或电阻器）被耦合在字线和第二电势之间，使得字线通过无源部件以高电阻方式耦合到第二电位。 无源元件对于字线和触点连接之间的漏电流是透射的。
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4.发明授权Integrated semiconductor memory comprising at least one word line and comprising a multiplicity of memory cells 有权包括至少一个字线并且包括多个存储单元的集成半导体存储器公开(公告)号：US07180820B2
公开(公告)日：2007-02-20
申请号：US11140554
申请日：2005-05-27
IPC分类号： G11C8/00
CPC分类号： G11C11/4085 , G11C29/02 , G11C29/025 , G11C29/83 , G11C29/832 , G11C2029/1202 , H01L27/10891 , H01L27/10897
摘要： An integrated semiconductor memory includes at least one word line and a number of memory cells. Each memory cell has a selection transistor coupled to the word line. A word line driver is coupled to the word line. The word line driver provides a first electrical potential or a second electrical potential to the word line such that the word line is activated by the first electrical potential and is deactivated by the second electrical potential. A passive component (e.g., a diode or a resistor) is coupled between the word line and the second electrical potential such that the word line is coupled to the second electrical potential in a high-resistance fashion through the passive component. The passive component is transmissive for a leakage current between the word line and the contact connection.
摘要翻译： 集成半导体存储器包括至少一个字线和多个存储器单元。 每个存储单元具有耦合到字线的选择晶体管。 字线驱动器耦合到字线。 字线驱动器向字线提供第一电位或第二电势，使得字线由第一电位激活并且被第二电位禁用。 无源部件（例如，二极管或电阻器）被耦合在字线和第二电势之间，使得字线通过无源部件以高电阻方式耦合到第二电位。 无源元件对于字线和触点连接之间的漏电流是透射的。
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5.发明授权Integrated semiconductor memory device and method for operating an integrated semiconductor memory device 有权用于操作集成半导体存储器件的集成半导体存储器件和方法公开(公告)号：US07102912B2
公开(公告)日：2006-09-05
申请号：US11071590
申请日：2005-03-04
IPC分类号： G11C11/00
CPC分类号： G11C11/4094 , G11C7/02 , G11C7/12
摘要： An integrated semiconductor memory device includes a memory cell array (B1) with a first bit line and a second bit line (BL, /BL), a controllable resistor (SW) and a control unit (100) configured to control the controllable resistor. In a first operating state of the integrated semiconductor memory device, the first and second bit lines are connected to one another via a first controllable switch (ET1) and also via the controllable resistor (SW) which has been set to a low resistance, to a connection (A10) that applies a mid-voltage (VBLEQ), where the voltage level of the mid-voltage is in the form of an arithmetic mean between a first and second voltage potential (VBLH, VBLL). By virtue of the control unit briefly setting the controllable resistor to a very low resistance in the first operating state of the integrated semiconductor memory device, the period of time required for the first and second bit lines require to assume the mid-voltage (VBLEQ) is shortened. The influence of capacitive coupling influences, which slow down the charging of the first and second bit lines to the mid-voltage, is significantly reduced as a result.
摘要翻译： 集成半导体存储器件包括具有第一位线和第二位线（BL，/ BL）的存储单元阵列（B 1），可控电阻器（SW）和控制单元（100），其被配置为控制可控电阻器 。 在集成半导体存储器件的第一操作状态下，第一和第二位线经由第一可控开关（ET 1）彼此连接，并且还经由设置为低电阻的可控电阻（SW）连接， 涉及施加中间电压（V BAT）的连接（A 10），其中中压的电压电平为第一和第二电压电位之间的算术平均值 VBLH，VBLL）。 由于控制单元在集成半导体存储器件的第一操作状态下将可控电阻短暂地设置为非常低的电阻，所以第一和第二位线所需的时间段需要采用中间电压（V < SUB> BLEQ ）缩短。 因此，将第一和第二位线的充电速度降低到中间电压的电容耦合影响的影响显着减小。
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6.发明授权Integrated dynamic memory having a control circuit for controlling a refresh mode for memory cells 失效具有用于控制存储器单元的刷新模式的控制电路的集成动态存储器公开(公告)号：US06940775B2
公开(公告)日：2005-09-06
申请号：US10823608
申请日：2004-04-14
IPC分类号： G11C8/02 , G11C11/406 , G11C7/00
CPC分类号： G11C11/40626 , G11C11/406 , G11C2211/4061
摘要： An integrated dynamic memory includes memory cells which are combined to form individual independently addressable units, and a control circuit for controlling a refresh mode for the memory cells. The memory cells can have their memory cell content refreshed. The control circuit is designed such that one or more units of memory cells can be subject to a refresh mode in parallel in a refresh cycle. The control circuit sets a number of memory cell units, which are to be refreshed in parallel in a refresh cycle based on a temperature reference value. A maximum possible operating temperature for a memory chip can be increased without additional restrictions on memory access.
摘要翻译： 集成动态存储器包括被组合以形成单独的可独立寻址单元的存储单元，以及用于控制存储器单元的刷新模式的控制电路。 存储单元可以刷新其存储单元格内容。 控制电路被设计成使得一个或多个单元的存储单元可以在更新周期中并行进行刷新模式。 控制电路基于温度参考值设置要在刷新周期中并行刷新的多个存储单元单元。 可以增加存储器芯片的最大可能工作温度，而不需要对存储器访问的额外限制。
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7.发明授权Integrated semiconductor memory with redundant memory cells replaceable for either true or complementary defective memory cells 有权具有冗余存储器单元的集成半导体存储器，可替换为真或互补缺陷存储器单元公开(公告)号：US07236412B2
公开(公告)日：2007-06-26
申请号：US11053659
申请日：2005-02-09
IPC分类号： G11C29/00
CPC分类号： G11C29/50 , G11C7/1006 , G11C11/401 , G11C29/36 , G11C29/50016 , G11C29/80
摘要： An integrated semiconductor memory including memory cells which can be driven via first and second word lines and can be replaced by redundant memory cells. In the first memory cell type, data can be stored corresponding to the data present at a data input terminal. In the memory cells of a second memory cell type, data can be stored inverted with respect to data present at the data input terminal. The integrated semiconductor memory includes a circuit for data inversion, wherein the data are written to a redundant memory cell, inverted with respect to the data present at the data input terminal if the defective memory cell and the redundant memory cell replacing it are situated in different word line strips of a bit line twist, and if the defective memory cell and the redundant memory cell replacing it are associated with different memory cell types.
摘要翻译： 一种集成半导体存储器，包括可以经由第一和第二字线驱动并可由冗余存储器单元代替的存储单元。 在第一存储单元类型中，可以对应于存在于数据输入端的数据存储数据。 在第二存储单元类型的存储单元中，数据可以相对于存在于数据输入端的数据反转存储。 集成半导体存储器包括用于数据反转的电路，其中数据被写入冗余存储单元，相对于存在于数据输入端的数据而被反转，如果有缺陷的存储单元和替换它的冗余存储单元位于不同的 位线的字线条扭曲，并且如果不良存储器单元和替换它的冗余存储器单元与不同的存储器单元类型相关联。
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公开(公告)号：US07196572B2
公开(公告)日：2007-03-27
申请号：US11123226
申请日：2005-05-06
申请人： Ralf Schneider , Stephan Schröder , Manfred Pröll , Jörg Kliewer
发明人： Ralf Schneider , Stephan Schröder , Manfred Pröll , Jörg Kliewer
IPC分类号： G05F1/10
CPC分类号： G11C11/4074 , G11C5/145
摘要： An integrated circuit includes an input terminal (IN) for application of a supply voltage (Vext) and an output terminal (A) for generation of an output voltage (Vout). A first branch including a first controllable resistance (T1) and a second branch including a charge pump (10) and a second controllable resistance (T2) are connected between the input terminal (IN) and the output terminal (A). A control circuit (20) alters the resistance values of the first and second controllable resistances (T1, T2) in a manner dependent on a ratio of an actual value (Vout) of the output voltage to a desired value (VSout) of the output voltage and a ratio of an actual value (Vext) of the supply voltage to a desired value (VSext) of the supply voltage. As a result, the output voltage (Vout) can be stabilized to the desired value (VSout) virtually independently of fluctuations of the supply voltage.
摘要翻译： 集成电路包括用于施加电源电压（Vext）的输入端（IN）和用于产生输出电压（Vout）的输出端子（A）。 包括第一可控电阻（T 1）和包括电荷泵（10）和第二可控电阻（T 2）的第二分支的第一分支连接在输入端（IN）和输出端（A）之间。 控制电路（20）以取决于输出电压的实际值（Vout）与期望值（VSout）的比值的方式改变第一和第二可控电阻（T 1，T 2）的电阻值 输出电压和电源电压的实际值（Vext）与电源电压的期望值（VSext）的比率。 结果，输出电压（Vout）可以实际上独立于电源电压的波动而稳定到期望值（VSout）。
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9.发明授权Integrated memory having redundant units of memory cells and method for testing an integrated memory 有权具有存储单元的冗余单元的集成存储器和用于测试集成存储器的方法公开(公告)号：US07181579B2
公开(公告)日：2007-02-20
申请号：US10798334
申请日：2004-03-12
IPC分类号： G06F12/16 , G11C11/413
CPC分类号： G11C29/44 , G11C29/78 , G11C2029/4402
摘要： An integrated memory has individually addressable normal and redundant units of memory cells. A memory unit is used to store, in a normal mode, an address for one of the normal units which needs to be replaced by one of the redundant units. A comparison unit compares an address which is present on an address bus with an address stored in the memory unit and activates one of the redundant units in the event of a match being identified. The memory also has a test circuit which can be activated by a test mode signal, can reset the memory unit to an initial state, and can store an address for one of the redundant units in the memory unit for subsequently writing an identification code to this redundant unit.
摘要翻译： 集成存储器具有可单独寻址的存储器单元的正常和冗余单元。 存储单元用于以正常模式存储需要由冗余单元之一替代的正常单元之一的地址。 比较单元将存在于地址总线上的地址与存储在存储器单元中的地址进行比较，并且在匹配被识别的情况下激活冗余单元中的一个。 存储器还具有可由测试模式信号激活的测试电路，可以将存储器单元重置为初始状态，并且可以将存储器单元中的一个冗余单元的地址存储在随后向其中写入识别码 冗余单元。
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10.发明授权公开(公告)号：US06859406B2
公开(公告)日：2005-02-22
申请号：US10724906
申请日：2003-12-01
IPC分类号： G11C7/00 , G11C7/12 , G11C11/24 , G11C11/4076 , G11C11/4091 , G11C11/4094
CPC分类号： G11C11/4076 , G11C11/4094
摘要： A dynamic RAM semiconductor memory with a shared sense amplifier organization concept, in which the cell arrays are subdivided into blocks whose bit lines are connected in pairs from two adjacent blocks in each case to a common sense amplifier and the sense amplifiers are disposed between the cell blocks. In which case bit line switches are disposed in sense amplifier strips—lying between the blocks—between in each case two adjacent sense amplifiers in order to momentarily connect the other ends—not connected to the sense amplifiers—of two bit line pairs from the adjacent cell blocks during a precharge phase of a bit line pair activated directly beforehand. The precharge phase takes place at the start of a charge equalization phase.
摘要翻译： 具有共享读出放大器组织概念的动态RAM半导体存储器，其中单元阵列被细分为块，其位线在每种情况下从两个相邻块成对连接到公共读出放大器，并且读出放大器设置在单元之间 块。 在哪种情况下，位线开关设置在位于块之间的读出放大器条中 - 在每种情况下在两个相邻的读出放大器之间，以便将来自相邻的两个位线对的未连接到读出放大器的另一端 在预先激活的位线对的预充电阶段期间的单元块。 预充电阶段在充电均衡阶段开始时进行。
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